Showing 1–23 of 23 results for author: Giacomini, G

Results for pixel and strip centimeter-scale AC-LGAD sensors with a 120 GeV proton beam

Authors: Irene Dutta, Christopher Madrid, Ryan Heller, Shirsendu Nanda, Danush Shekar, Claudio San Martín, Matías Barría, Artur Apresyan, Zhenyu Ye, William K. Brooks, Wei Chen, Gabriele D'Amen, Gabriele Giacomini, Alessandro Tricoli, Aram Hayrapetyan, Hakseong Lee, Ohannes Kamer Köseyan, Sergey Los, Koji Nakamura, Sayuka Kita, Tomoka Imamura, Cristían Peña, Si Xie

Abstract: We present the results of an extensive evaluation of strip and pixel AC-LGAD sensors tested with a 120 GeV proton beam, focusing on the influence of design parameters on the sensor temporal and spatial resolutions. Results show that reducing the thickness of pixel sensors significantly enhances their time resolution, with 20 $μ$m-thick sensors achieving around 20 ps. Uniform performance is attaina… ▽ More We present the results of an extensive evaluation of strip and pixel AC-LGAD sensors tested with a 120 GeV proton beam, focusing on the influence of design parameters on the sensor temporal and spatial resolutions. Results show that reducing the thickness of pixel sensors significantly enhances their time resolution, with 20 $μ$m-thick sensors achieving around 20 ps. Uniform performance is attainable with optimized sheet resistance, making these sensors ideal for future timing detectors. Conversely, 20 $μ$m-thick strip sensors exhibit higher jitter than similar pixel sensors, negatively impacting time resolution, despite reduced Landau fluctuations with respect to the 50 $μ$m-thick versions. Additionally, it is observed that a low resistivity in strip sensors limits signal size and time resolution, whereas higher resistivity improves performance. This study highlights the importance of tuning the n$^{+}$ sheet resistance and suggests that further improvements should target specific applications like the Electron-Ion Collider or other future collider experiments. In addition, the detailed performance of four AC-LGADs sensor designs is reported as examples of possible candidates for specific detector applications. These advancements position AC-LGADs as promising candidates for future 4D tracking systems, pending the development of specialized readout electronics. △ Less

Submitted 13 July, 2024; originally announced July 2024.

Imaging of single barium atoms in a second matrix site in solid xenon for barium tagging in a $^{136}$Xe double beta decay experiment

Authors: M. Yvaine, D. Fairbank, J. Soderstrom, C. Taylor, J. Stanley, T. Walton, C. Chambers, A. Iverson, W. Fairbank, S. Al Kharusi, A. Amy, E. Angelico, A. Anker, I. J. Arnquist, A. Atencio, J. Bane, V. Belov, E. P. Bernard, T. Bhatta, A. Bolotnikov, J. Breslin, P. A. Breur, J. P. Brodsky, E. Brown, T. Brunner , et al. (112 additional authors not shown)

Abstract: Neutrinoless double beta decay is one of the most sensitive probes for new physics beyond the Standard Model of particle physics. One of the isotopes under investigation is $^{136}$Xe, which would double beta decay into $^{136}$Ba. Detecting the single $^{136}$Ba daughter provides a sort of ultimate tool in the discrimination against backgrounds. Previous work demonstrated the ability to perform s… ▽ More Neutrinoless double beta decay is one of the most sensitive probes for new physics beyond the Standard Model of particle physics. One of the isotopes under investigation is $^{136}$Xe, which would double beta decay into $^{136}$Ba. Detecting the single $^{136}$Ba daughter provides a sort of ultimate tool in the discrimination against backgrounds. Previous work demonstrated the ability to perform single atom imaging of Ba atoms in a single-vacancy site of a solid xenon matrix. In this paper, the effort to identify signal from individual barium atoms is extended to Ba atoms in a hexa-vacancy site in the matrix and is achieved despite increased photobleaching in this site. Abrupt fluorescence turn-off of a single Ba atom is also observed. Significant recovery of fluorescence signal lost through photobleaching is demonstrated upon annealing of Ba deposits in the Xe ice. Following annealing, it is observed that Ba atoms in the hexa-vacancy site exhibit antibleaching while Ba atoms in the tetra-vacancy site exhibit bleaching. This may be evidence for a matrix site transfer upon laser excitation. Our findings offer a path of continued research toward tagging of Ba daughters in all significant sites in solid xenon. △ Less

Submitted 28 June, 2024; originally announced July 2024.

Comments: 9 pages, 8 figures

Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Authors: S. M. Mazza, G. Saito, Y. Zhao, T. Kirkes, N. Yoho, D. Yerdea, N. Nagel, J. Ott, M. Nizam, M. Leite, M. Moralles, H. F. -W. Sadrozinski, A. Seiden, B. Schumm, F. McKinney-Martinez, G. Giacomini, W. Chen

Abstract: The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was 11-2, with a nominal beam size of 3 cm x 0.5 cm, a repetition rate of 500 MHz, and very monochromatic. LGADs of different thicknesses and gain layer configurations… ▽ More The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was 11-2, with a nominal beam size of 3 cm x 0.5 cm, a repetition rate of 500 MHz, and very monochromatic. LGADs of different thicknesses and gain layer configurations were read out using fast amplification boards and digitized with a fast oscilloscope. Standard PiN devices were characterized as well. The devices' energy resolution and time resolution as a function of X-ray energy were measured. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data. △ Less

Submitted 1 September, 2023; v1 submitted 27 June, 2023; originally announced June 2023.

Comments: 18 pages, 18 figures

Solid State Detectors and Tracking for Snowmass

Authors: A. Affolder, A. Apresyan, S. Worm, M. Albrow, D. Ally, D. Ambrose, E. Anderssen, N. Apadula, P. Asenov, W. Armstrong, M. Artuso, A. Barbier, P. Barletta, L. Bauerdick, D. Berry, M. Bomben, M. Boscardin, J. Brau, W. Brooks, M. Breidenbach, J. Buckley, V. Cairo, R. Caputo, L. Carpenter, M. Centis-Vignali , et al. (110 additional authors not shown)

Abstract: Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the… ▽ More Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the development of new techniques, materials and technologies in order to fully exploit their physics potential. In this article we summarize the discussions and conclusions of the 2022 Snowmass Instrumentation Frontier subgroup on Solid State and Tracking Detectors (Snowmass IF03). △ Less

Submitted 19 October, 2022; v1 submitted 8 September, 2022; originally announced September 2022.

Comments: for the Snowmass Instrumentation Frontier Solid State Detector and Tracking community

Electronics for Fast Timing

Authors: D. Braga, G. Carini, G. Deptuch, A. Dragone, F. Fahim, K. Flood, G. Giacomini, D. Gorni, R. Lipton, B. Markovic, S. Mazza, S. Miryala, P. Rubinov, G. Saffier-Ewing, H. Sadrozinski, A. Schwartzman, A. Seiden, Q. Sun, T. Zimmerman

Abstract: Picosecond-level timing will be an important component of the next generation of particle physics detectors. The ability to add a 4$^{th}$ dimension to our measurements will help address the increasing complexity of events at hadron colliders and provide new tools for precise tracking and calorimetry for all experiments. Detectors are described in detail on other whitepapers. In this note, we addr… ▽ More Picosecond-level timing will be an important component of the next generation of particle physics detectors. The ability to add a 4$^{th}$ dimension to our measurements will help address the increasing complexity of events at hadron colliders and provide new tools for precise tracking and calorimetry for all experiments. Detectors are described in detail on other whitepapers. In this note, we address challenges in electronics design for the new generations of fast timing detectors △ Less

Submitted 31 March, 2022; originally announced April 2022.

Comments: Submitted to the Proceedings of the US Community Study on the Future of Particle Physics (Snowmass 2021)

4-Dimensional Trackers

Authors: Doug Berry, Valentina Cairo, Angelo Dragone, Matteo Centis-Vignali, Gabriele Giacomini, Ryan Heller, Sergo Jindariani, Adriano Lai, Lucie Linssen, Ron Lipton, Chris Madrid, Bojan Markovic, Simone Mazza, Jennifer Ott, Ariel Schwartzman, Hannsjörg Weber, Zhenyu Ye

Abstract: 4-dimensional (4D) trackers with ultra fast timing (10-30 ps) and very fine spatial resolution (O(few $μ$m)) represent a new avenue in the development of silicon trackers, enabling new physics capabilities beyond the reach of the existing tracking detectors. This paper reviews the impact of integrating 4D tracking capabilities on several physics benchmarks both in potential upgrades of the HL-LHC… ▽ More 4-dimensional (4D) trackers with ultra fast timing (10-30 ps) and very fine spatial resolution (O(few $μ$m)) represent a new avenue in the development of silicon trackers, enabling new physics capabilities beyond the reach of the existing tracking detectors. This paper reviews the impact of integrating 4D tracking capabilities on several physics benchmarks both in potential upgrades of the HL-LHC experiments and in several detectors at future colliders, and summarizes the currently available sensor technologies as well as electronics, along with their limitations and directions for R$\&$D. △ Less

Submitted 25 March, 2022; originally announced March 2022.

Comments: 26 pages, contribution to Snowmass 2021

Monolithic Active Pixel Sensors on CMOS technologies

Authors: Nicole Apadula, Whitney Armstrong, James Brau, Martin Breidenbach, R. Caputo, Gabriella Carinii, Alberto Collu, Marcel Demarteau, Grzegorz Deptuch, Angelo Dragone, Gabriele Giacomini, Carl Grace, Norman Graf, Leo Greiner, Ryan Herbst, Gunther Haller, Manoj Jadhav, Sylvester Joosten, Christopher J. Kenney, C. Kierans, Jihee Kim, Thomas Markiewicz, Yuan Mei, Jessica Metcalfe, Zein-Eddine Meziani , et al. (15 additional authors not shown)

Abstract: Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic Active Pixel Sensors (MAPS), in which Si diodes and readout circuitry are combined in the same pixels, and can be fabricated in some of standard CMOS processes, are… ▽ More Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic Active Pixel Sensors (MAPS), in which Si diodes and readout circuitry are combined in the same pixels, and can be fabricated in some of standard CMOS processes, are a promising technology for high-granularity and light detectors. In this paper we review 1) the requirements on MAPS for trackers and electromagnetic calorimeters (ECal) at future colliders experiments, 2) the ongoing efforts towards dedicated MAPS for the Electron-Ion Collider (EIC) at BNL, for which the EIC Silicon Consortium was already instantiated, and 3) space-born applications for MeV $γ$-ray experiments with MAPS based trackers (AstroPix). △ Less

Submitted 28 March, 2022; v1 submitted 14 March, 2022; originally announced March 2022.

Comments: 25 pages, 18 figures, contribution to Snowmass 2021

Evaluation of Radiation Hardness of High-Voltage Silicon Vertical JFETs

Authors: Gabriele Giacomini, Marco Bomben, Wei Chen, David Lynn

Abstract: In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to… ▽ More In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2e15 neq/cm2 along with other requirements. While GaN JFETs have been selected as suitable rad-hard switch, a silicon vertical HV-JFET was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFET satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFETs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). This paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour. △ Less

Submitted 21 July, 2020; originally announced July 2020.

Layout and Performance of HPK Prototype LGAD Sensors for the High-Granularity Timing Detector

Authors: X. Yang, S. Alderweireldt, N. Atanov, M. K. Ayoub, J. Barreiro Guimaraes da Costa, L. Castillo Garcia, H. Chen, S. Christie, V. Cindro, H. Cui, G. D'Amen, Y. Davydov, Y. Y. Fan, Z. Galloway, J. J. Ge, C. Gee, G. Giacomini, E. L. Gkougkousis, C. Grieco, S. Grinstein, J. Grosse-Knetter, S. Guindon, S. Han, A. Howard, Y. P. Huang , et al. (54 additional authors not shown)

Abstract: The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the pseudo-rapidity region of $2.4<|η|<4.0$ with two end caps on each side and a total area of 6.4 $m^2$. The timing performance can be improved by implanting an internal gain layer that can produce signal with a fast rising… ▽ More The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the pseudo-rapidity region of $2.4<|η|<4.0$ with two end caps on each side and a total area of 6.4 $m^2$. The timing performance can be improved by implanting an internal gain layer that can produce signal with a fast rising edge, which improve significantly the signal-to-noise ratio. The required average timing resolution per track for a minimum-ionising particle is 30 ps at the start and 50 ps at the end of the HL-LHC operation. This is achieved with several layers of LGAD. The innermost region of the detector would accumulate a 1 MeV-neutron equivalent fluence up to $2.5 \times 10^{15} cm^{-2}$ before being replaced during the scheduled shutdowns. The addition of this new detector is expected to play an important role in the mitigation of high pile-up at the HL-LHC. The layout and performance of the various versions of LGAD prototypes produced by Hamamatsu (HPK) have been studied by the ATLAS Collaboration. The breakdown voltages, depletion voltages, inter-pad gaps, collected charge as well as the time resolution have been measured and the production yield of large size sensors has been evaluated. △ Less

Submitted 31 March, 2020; originally announced March 2020.

Comments: 17 pages, 20 figures

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

Authors: P. Lv, G. F. Cao, L. J. Wen, S. Al Kharusi, G. Anton, I. J. Arnquist, I. Badhrees, P. S. Barbeau, D. Beck, V. Belov, T. Bhatta, P. A. Breur, J. P. Brodsky, E. Brown, T. Brunner, S. Byrne Mamahit, E. Caden, L. Cao, C. Chambers, B. Chana, S. A. Charlebois, M. Chiu, B. Cleveland, M. Coon, A. Craycraft , et al. (126 additional authors not shown)

Abstract: Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in a vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 nm to 280 nm. Refractive index and extinct… ▽ More Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in a vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 nm to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of a FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon. △ Less

Submitted 4 December, 2019; originally announced December 2019.

Reflectivity and PDE of VUV4 Hamamatsu SiPMs in Liquid Xenon

Authors: P. Nakarmi, I. Ostrovskiy, A. K. Soma, F. Retiere, S. Al Kharusi, M. Alfaris, G. Anton, I. J. Arnquist, I. Badhrees, P. S. Barbeau, D. Beck, V. Belov, T. Bhatta, J. Blatchford, P. A. Breur, J. P. Brodsky, E. Brown, T. Brunner, S. Byrne Mamahit, E. Caden, G. F. Cao, L. Cao, C. Chambers, B. Chana, S. A. Charlebois , et al. (130 additional authors not shown)

Abstract: Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE. Little information is currently a… ▽ More Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE. Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 micrometer micro-cells conducted with xenon scintillation light (~175 nm) in liquid xenon. The specular reflectivity at 15 deg. incidence of three samples of VUV4 SiPMs is found to be 30.4+/-1.4%, 28.6+/-1.3%, and 28.0+/-1.3%, respectively. The PDE at normal incidence differs by +/-8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was also measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon. △ Less

Submitted 24 December, 2019; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 21 pages, 15 figures, 6 tables. As accepted by JINST

New Technologies for Discovery

Authors: Z. Ahmed, A. Apresyan, M. Artuso, P. Barry, E. Bielejec, F. Blaszczyk, T. Bose, D. Braga, S. A. Charlebois, A. Chatterjee, A. Chavarria, H. -M. Cho, S. Dalla Torre, M. Demarteau, D. Denisov, M. Diefenthaler, A. Dragone, F. Fahim, C. Gee, S. Habib, G. Haller, J. Hogan, B. J. P. Jones, M. Garcia-Sciveres, G. Giacomini , et al. (58 additional authors not shown)

Abstract: For the field of high energy physics to continue to have a bright future, priority within the field must be given to investments in the development of both evolutionary and transformational detector development that is coordinated across the national laboratories and with the university community, international partners and other disciplines. While the fundamental science questions addressed by hi… ▽ More For the field of high energy physics to continue to have a bright future, priority within the field must be given to investments in the development of both evolutionary and transformational detector development that is coordinated across the national laboratories and with the university community, international partners and other disciplines. While the fundamental science questions addressed by high energy physics have never been more compelling, there is acute awareness of the challenging budgetary and technical constraints when scaling current technologies. Furthermore, many technologies are reaching their sensitivity limit and new approaches need to be developed to overcome the currently irreducible technological challenges. This situation is unfolding against a backdrop of declining funding for instrumentation, both at the national laboratories and in particular at the universities. This trend has to be reversed for the country to continue to play a leadership role in particle physics, especially in this most promising era of imminent new discoveries that could finally break the hugely successful, but limited, Standard Model of fundamental particle interactions. In this challenging environment it is essential that the community invest anew in instrumentation and optimize the use of the available resources to develop new innovative, cost-effective instrumentation, as this is our best hope to successfully accomplish the mission of high energy physics. This report summarizes the current status of instrumentation for high energy physics, the challenges and needs of future experiments and indicates high priority research areas. △ Less

Submitted 10 August, 2019; v1 submitted 31 July, 2019; originally announced August 2019.

Comments: A report of the 2018 DPF Coordinating Panel for Advanced Detectors (CPAD) Community Workshop (101 pages)

Fabrication and performance of AC-coupled LGADs

Authors: Gabriele Giacomini, Wei Chen, Gabriele D'Amen, Alessandro Tricoli

Abstract: Detectors that can simultaneously provide fine time and spatial resolution have attracted wide-spread interest for applications in several fields such as high-energy and nuclear physics as well as in low-energy electron detection, photon science, photonics and imaging. Low-Gain Avalanche Diodes (LGADs), being fabricated on thin silicon substrates and featuring a charge gain of up to 100, exhibit e… ▽ More Detectors that can simultaneously provide fine time and spatial resolution have attracted wide-spread interest for applications in several fields such as high-energy and nuclear physics as well as in low-energy electron detection, photon science, photonics and imaging. Low-Gain Avalanche Diodes (LGADs), being fabricated on thin silicon substrates and featuring a charge gain of up to 100, exhibit excellent timing performance. Since pads much larger than the substrate thickness are necessary to achieve a spatially uniform multiplication, a fine pad pixelation is difficult. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. At Brookhaven National Laboratory, we have designed and fabricated prototypes of AC-coupled LGAD sensors. The performance of small test structures with different particle beams from radioactive sources are shown. △ Less

Submitted 3 September, 2019; v1 submitted 27 June, 2019; originally announced June 2019.

Comments: 12 pages, 10 figures

Journal ref: 2019 JINST14 P09004

Performance of Thin Planar \textit{n-on-p} silicon pixels after HL-LHC radiation fluences

Authors: A. Ducourthial, M. Bomben, G. Calderini, R. Camacho, L. D'Eramo, I. Luise, G. Marchiori, M. Boscardin, L. Bosisio, G. Darbo, G. -F. Dalla Betta, G. Giacomini, M. Meschini, A. Messineo, S. Ronchin, N. Zorzi

Abstract: The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130~$μ$m thick $n-on-p$ silicon pixel sensors which can withstand the expected large particle fluences at HL- LHC, while deliverin… ▽ More The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130~$μ$m thick $n-on-p$ silicon pixel sensors which can withstand the expected large particle fluences at HL- LHC, while delivering data at high rate with excellent hit efficiency. Such sensors were tested on beam before and after irradiation both at CERN-SPS and at DESY, and their performances are presented in this paper. Beam test data indicate that these detectors are suited for all the layers where planar sensors are foreseen in the future ATLAS tracker: hit-efficiency is greater than 97\% for fluences $Φ\lesssim 7\times10^{15}\rm{n_{eq}/cm^2}$ and module power consumption is within the specified limits. Moreover, at a fluence $Φ= 1.3\times10^{16}\rm{n_{eq}/cm^2}$, hit-efficiency is still as high as 88\% and charge collection efficiency is about 30\%. △ Less

Submitted 5 September, 2019; v1 submitted 16 October, 2018; originally announced October 2018.

Comments: 24 pages, 14 figures, published version

Thin and edgeless sensors for ATLAS pixel detector upgrade

Authors: Audrey Ducourthial, Marco Bomben, Giovanni Calderini, Louis D'Eramo, Giovanni Marchiori, Ilaria Luise, Alvise Bagolini, Maurizio Boscardin, Luciano Bosisio, Giovanni Darbo, Gian-Franco Dalla Betta, Gabriele Giacomini, Marco Meschini, Alberto Messineo, Sabina Ronchin, Nicola Zorzi

Abstract: To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is mi… ▽ More To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. In this paper we report on two productions, a first one consisting of 200 μm thick n-on-p sensors with active edge, a second one composed of 100 and 130 μm thick n-on-p sensors. Those sensors have been tested on beam, both at CERN-SPS and at DESY and their performance before and after irradiation will be presented. △ Less

Submitted 10 October, 2017; originally announced October 2017.

Comments: 10 pages, 7 figures, to appear in the proceedings of the PSD11 conference, 3th-8th September 2017, Open University (Milton Keynes)

Performance of active edge pixel sensors

Authors: Marco Bomben, Audrey Ducourthial, Alvise Bagolini, Maurizio Boscardin, Luciano Bosisio, Giovanni Calderini, Louis D'Eramo, Gabriele Giacomini, Giovanni Marchiori, Nicola Zorzi, André Rummler, Jens Weingarten

Abstract: To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin… ▽ More To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin planar n-on-p pixel sensors with active edge have been designed and produced by LPNHE and FBK foundry. Two detector module prototypes, consisting of pixel sensors connected to FE-I4B readout chips, have been tested with beams at CERN and DESY. In this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit-efficiency also at the detector edge, even in presence of guard rings. △ Less

Submitted 4 April, 2017; v1 submitted 6 February, 2017; originally announced February 2017.

Comments: 14 pages, 11 figures

Journal ref: JINST 12 P05006 (2017)

Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Authors: Marco Bomben, Alvise Bagolini, Maurizio Boscardin, Luciano Bosisio, Giovanni Calderini, Jacques Chauveau, Audrey Ducourthial, Gabriele Giacomini, Giovanni Marchiori, Nicola Zorzi

Abstract: In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel senso… ▽ More In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given. △ Less

Submitted 7 September, 2016; originally announced September 2016.

Comments: 4 pages, 9 figures, conference record of 2015 IEEE NSS, San Diego (CA), 31/10-7/11/2015

Characterization of the VEGA ASIC coupled to large area position-sensitive Silicon Drift Detectors

Authors: R. Campana, Y. Evangelista, F. Fuschino, M. Ahangarianabhari, D. Macera, G. Bertuccio, M. Grassi, C. Labanti, M. Marisaldi, P. Malcovati, A. Rachevski, G. Zampa, N. Zampa, L. Andreani, G. Baldazzi, E. Del Monte, Y. Favre, M. Feroci, F. Muleri, I. Rashevskaya, A. Vacchi, F. Ficorella, G. Giacomini, A. Picciotto, M. Zuffa

Abstract: Low-noise, position-sensitive Silicon Drift Detectors (SDDs) are particularly useful for experiments in which a good energy resolution combined with a large sensitive area is required, as in the case of X-ray astronomy space missions and medical applications. This paper presents the experimental characterization of VEGA, a custom Application Specific Integrated Circuit (ASIC) used as the front-end… ▽ More Low-noise, position-sensitive Silicon Drift Detectors (SDDs) are particularly useful for experiments in which a good energy resolution combined with a large sensitive area is required, as in the case of X-ray astronomy space missions and medical applications. This paper presents the experimental characterization of VEGA, a custom Application Specific Integrated Circuit (ASIC) used as the front-end electronics for XDXL-2, a large-area (30.5 cm^2) SDD prototype. The ASICs were integrated on a specifically developed PCB hosting also the detector. Results on the ASIC noise performances, both stand-alone and bonded to the large area SDD, are presented and discussed. △ Less

Submitted 7 July, 2014; originally announced July 2014.

Comments: 15 pages, 11 figures. Accepted for publication in Journal of Instrumentation (JINST)

Journal ref: Journal of Instrumentation, Volume 9, August 2014

Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

Authors: Gabriele Giacomini, Alvise Bagolini, Marco Bomben, Maurizio Boscardin, Luciano Bosisio, Giovanni Calderini, Jacques Chauveau, Alessandro La Rosa, Giovanni Marchiori, Nicola Zorzi

Abstract: In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATL… ▽ More In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these demands. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch. △ Less

Submitted 2 December, 2013; originally announced December 2013.

Comments: 10 pages, 8 figures, proceedings of the conference IPRD13, Siena (Italy)

Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades

Authors: M. Bomben, A. Bagolini, M. Boscardin, L. Bosisio, G. Calderini, J. Chauveau, G. Giacomini, A. La Rosa, G. Marchori, N. Zorzi

Abstract: In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar… ▽ More In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined. △ Less

Submitted 15 November, 2013; originally announced November 2013.

Comments: 6 pages, 13 figures, to appear in the proceedings of the 2013 Nuclear Science Symposium and Medical Imaging Conference. arXiv admin note: text overlap with arXiv:1311.1628

Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

Authors: M. Bomben, A. Bagolini, M. Boscardin, L. Bosisio, G. Calderini, J. Chauveau, G. Giacomini, A. La Rosa, G. Marchori, N. Zorzi

Abstract: In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar… ▽ More In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given. △ Less

Submitted 7 November, 2013; originally announced November 2013.

Comments: 9 pages, 9 figures, to appear in the proceedings of the 15th International Workshops on Radiation Imaging Detectors

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

Authors: M. Bomben, A. Bagolini, M. Boscardin, L. Bosisio, G. Calderini, J. Chauveau, G. Giacomini, A. La Rosa, G. Marchori, N. Zorzi

Abstract: In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar p… ▽ More In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the "active edge" concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown. △ Less

Submitted 15 February, 2013; v1 submitted 14 December, 2012; originally announced December 2012.

Comments: 6 pages, 5 figures, to appear in the proceedings of the 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices

Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

Authors: M. Bomben, A. Bagolini, M. Boscardin, L. Bosisio, G. Calderini, J. Chauveau, G. Giacomini, A. La Rosa, G. Marchori, N. Zorzi

Abstract: The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably d… ▽ More The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of $1 \times 10^{15} {\rm n_{eq}}/{\rm cm}^2$ comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb$^{-1}$) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach. △ Less

Submitted 18 February, 2013; v1 submitted 22 November, 2012; originally announced November 2012.

Comments: 20 pages, 9 figures, submitted to Nucl. Instr. and Meth. A