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Large insulating nitride islands on Cu3Au as a template for atomic spin structures
Authors:
Jeremie Gobeil,
David Coffey,
Shang Jen Wang,
Alexander F. Otte
Abstract:
We present controlled growth of c(2$\times$2)N islands on the (100) surface of Cu$_3$Au, which can be used as an insulating surface template for manipulation of magnetic adatoms. Compared to the commonly used Cu(100)/c(2$\times$2)N surface, where island sizes do not exceed several nanometers due to strain limitation, the current system provides better lattice matching between metal and adsorption…
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We present controlled growth of c(2$\times$2)N islands on the (100) surface of Cu$_3$Au, which can be used as an insulating surface template for manipulation of magnetic adatoms. Compared to the commonly used Cu(100)/c(2$\times$2)N surface, where island sizes do not exceed several nanometers due to strain limitation, the current system provides better lattice matching between metal and adsorption layer, allowing larger unstrained islands to be formed. We show that we can achieve island sizes ranging from tens to hundreds of nanometers, increasing the potential building area by a factor 10$^3$. Initial manipulation attempts show no observable difference in adatom behaviour, either in manipulation or spectroscopy.
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Submitted 20 July, 2018;
originally announced July 2018.
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Structural, optical, magnetic and electrical properties of Zn1-x Co (x) O thin films
Authors:
M. Tay,
Y. H. Wu,
G. C. Han,
Y. B. Chen,
X. P. Pan,
S. J. Wang,
P. Yang,
Y. P. Feng
Abstract:
Despite a considerable effort aiming at elucidating the nature of ferromagnetism in ZnO-based magnetic semiconductor, its origin still remains debatable. Although the observation of above room temperature ferromagnetism has been reported frequently in the literature by magnetometry measurement, so far there has been no report on correlated ferromagnetism in magnetic, optical and electrical measu…
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Despite a considerable effort aiming at elucidating the nature of ferromagnetism in ZnO-based magnetic semiconductor, its origin still remains debatable. Although the observation of above room temperature ferromagnetism has been reported frequently in the literature by magnetometry measurement, so far there has been no report on correlated ferromagnetism in magnetic, optical and electrical measurements. In this paper, we investigate systematically the structural, optical, magnetic and electrical properties of Zn1-x Co (x) O:Al thin films prepared by sputtering with x ranging from 0 to 0.33. We show that correlated ferromagnetism is present only in samples with x > 0.25. In contrast, samples with x < 0.2 exhibit weak ferromagnetism only in magnetometry measurement which is absent in optical and electrical measurements. We demonstrate, by systematic electrical transport studies that carrier localization indeed occurs below 20-50 K for samples with x < 0.2; however, this does not lead to the formation of ferromagnetic phase in these samples with an electron concentration in the range of 6 x 10(19) cm(-3) 1 x 10(20) cm(-3). Detailed structural and optical transmission spectroscopy analyses revealed that the anomalous Hall effect observed in samples with x > 0.25 is due to the formation of secondary phases and Co clusters.
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Submitted 30 April, 2009;
originally announced April 2009.
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Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering
Authors:
H. B. Nie,
S. Y. Xu,
S. J. Wang,
L. P. You,
Z. Yang,
C. K. Ong,
J. Li,
T. Y. F. Liew
Abstract:
TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN](n) multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N-2 processing pressure with varied N-2 partial pressure, and carried out…
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TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN](n) multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N-2 processing pressure with varied N-2 partial pressure, and carried out systematic characterization analyses of the films. We observed clear changes of phases in the films from metallic bcc Ta to a mixture of bcc Ta(N) and hexagonal Ta2N, then sequentially to fcc TaN and a mixture of TaN with N-rich phases when the N2 partial pressure increased from 0.0% to 30%. The changes were associated with changes in the grain shapes as well as in the preferred crystalline orientation of the films from bcc Ta [100] to [110], then to random and finally to fcc TaN [111], correspondingly. They were also associated with a change in film resistivity from metallic to semiconductor-like behavior in the range of 77-295 K. The films showed a typical polycrystalline textured structure with small, crystallized domains and irregular grain shapes. Clear preferred (111) stacks parallel to the substrate surface with embedded amorphous regions were observed in the film. TaN film with [ 111]-preferred orientation and a resistivity of 6.0 m Omega cm was obtained at 25% N-2 partial pressure, which may be suitable for the interlayer in [FeN/TaN](n) multilayers.
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Submitted 30 May, 2003; v1 submitted 29 May, 2003;
originally announced May 2003.
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Density Matrix of a Bose--Einstein Condensate: Steady--State versus Mean--Field Approach
Authors:
S. J. Wang,
M. C. Nemes,
A. N. Salgueiro,
H. A. Weidenmüller
Abstract:
We compare the equilibrium solution for the condensate obtained in the mean--field approximation to the master equation for sympathetic cooling with the one obtained by Scully for a system in contact with a heat bath with the help of an analogy with the laser. While the mean--field approach yields analytical formulas for the approach towards equilibrium and for the equilibrium solution, it negle…
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We compare the equilibrium solution for the condensate obtained in the mean--field approximation to the master equation for sympathetic cooling with the one obtained by Scully for a system in contact with a heat bath with the help of an analogy with the laser. While the mean--field approach yields analytical formulas for the approach towards equilibrium and for the equilibrium solution, it neglects the correlations between occupation numbers of different single--particle states which are approximately kept in Scully's approach. Such neglect is admissible as long as the fraction of Bosons in the condensate does not exceed a few percent or so.
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Submitted 7 December, 2001; v1 submitted 21 November, 2001;
originally announced November 2001.
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Mean-Field Approximation to the Master Equation for Sympathetic Cooling of Trapped Bosons
Authors:
S. J. Wang,
M. C. Nemes,
A. N. Salgueiro,
H. A. Weidenmueller
Abstract:
We use the mean-field approximation to simplify the master equation for sympathetic cooling of Bosons. For the mean single-particle occupation numbers, this approach yields the same equations as the factorization assumption introduced in an erlier paper. The stationary or equilibrium solution of the resulting master equation for the one-body density matrix shows that the mean-field approximation…
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We use the mean-field approximation to simplify the master equation for sympathetic cooling of Bosons. For the mean single-particle occupation numbers, this approach yields the same equations as the factorization assumption introduced in an erlier paper. The stationary or equilibrium solution of the resulting master equation for the one-body density matrix shows that the mean-field approximation breaks down whenever the fraction of condensate Bosons exceeds ten percent or so of the total. Using group-theoretical methods, we also solve the time-dependent master equation for the one-body density matrix. Given the time dependence of the mean single-particle occupation numbers, this solution is obtained by quadratures. It tends asymptotically towards the equilibrium solution.
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Submitted 21 November, 2001; v1 submitted 15 October, 2001;
originally announced October 2001.
