Showing 1–50 of 84 results for author: Pan, D

Giant interfacial Dzyaloshinskii-Moriya Interaction in perovskite La_{0.7}Sr_{0.3}MnO_{3} films

Authors: L. Yang, X. Zhang, H. Wang, N. Lei, J. Wang, Y. Sun, L. Liu, Z. Zhao, Y. Yang, D. Wei, D. Pan, J. Zhao, J. Shen, W. g Zhao, H. Lu, W. Wang, H. Yu

Abstract: The Dzyaloshinskii-Moriya interaction (DMI) plays a critical role in stabilizing topological spin textures, a key area of growing interest in oxide-based spintronics. While most of reported topological phenomena found in manganites are related to the bulk-like DMI, the understanding of interfacial DMI and its origin in oxide interfaces remain limited. Here we experimentally investigate the interfa… ▽ More The Dzyaloshinskii-Moriya interaction (DMI) plays a critical role in stabilizing topological spin textures, a key area of growing interest in oxide-based spintronics. While most of reported topological phenomena found in manganites are related to the bulk-like DMI, the understanding of interfacial DMI and its origin in oxide interfaces remain limited. Here we experimentally investigate the interfacial DMI of La_{0.7}Sr_{0.3}MnO_{3} (LSMO) films grown on various substrates by employing spin-wave propagation with drift velocities at room temperature. Our findings reveal a giant interfacial DMI coefficient (\mathit{D} _{s}) of 1.96 pJ/m in LSMO/NdGaO_{3}(110) system, exceeding previously reported values in oxides by one to two orders of magnitude. First-principles calculations further show that with the aid of 6\mathit{s} electrons, the 4\mathit{f} electrons from Nd play a key role in enhancing the spin-orbit coupling of the 3\mathit{d} electrons in Mn, ultimately leading to the observed giant interfacial DMI. This discovery of giant interfacial DMI through engineering the interface of oxides provides valuable insights for advancing functional chiral magnonics and spintronics. △ Less

Submitted 9 August, 2024; originally announced August 2024.

One-dimensional quantum dot array integrated with charge sensors in an InAs nanowire

Authors: Yi Luo, Xiao-Fei Liu, Zhi-Hai Liu, Weijie Li, Shili Yan, Han Gao, Haitian Su, Dong Pan, Jianhua Zhao, Ji-Yin Wang, H. Q. Xu

Abstract: We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array and corresponding charge stability diagrams are revealed with both direct current measurements and charge sensor signals. The one-dimensional quintuple-quantum-do… ▽ More We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array and corresponding charge stability diagrams are revealed with both direct current measurements and charge sensor signals. The one-dimensional quintuple-quantum-dot array are then tuned up and its charge configurations are fully mapped out with the two charge sensors. The energy level of each dot in the array can be controlled individually by using a compensated gate architecture (i.e., "virtual gate"). After that, four dots in the array are selected to form two double quantum dots and ultra strong inter-double-dot interaction is obtained. A theoretical simulation based on a 4-dimensional Hamiltonian confirms the strong coupling strength between the two double quantum dots. The highly controllable one-dimensional quantum dot array achieved in this work is expected to be valuable for employing InAs nanowires to construct advanced quantum hardware in the future. △ Less

Submitted 22 July, 2024; originally announced July 2024.

Lopsided Rigid Dumbbell Rheology from Langevin Equation: A Graduate Tutorial

Authors: Nhan Phan-Thien, Dingyi Pan, Mona A. Kanso, Alan Jeffrey Giacomin

Abstract: The modelling of symmetric rigid dumbbell particles suspended in a Newtonian fluid, as a model of a rigid-rod polymeric solution, has been accomplished exclusively through the diffusion equation, which has been detailed elegantly by Bird et al. [Chapter 14 of $Dynamics \ of \ Polymeric \ Liquids$, Vol 2, Ed 2, (1987)]. In this tutorial, a straightforward approach for modelling a lopsided rigid dum… ▽ More The modelling of symmetric rigid dumbbell particles suspended in a Newtonian fluid, as a model of a rigid-rod polymeric solution, has been accomplished exclusively through the diffusion equation, which has been detailed elegantly by Bird et al. [Chapter 14 of $Dynamics \ of \ Polymeric \ Liquids$, Vol 2, Ed 2, (1987)]. In this tutorial, a straightforward approach for modelling a lopsided rigid dumbbell particle is presented by the Langevin analysis. The connector force between the dumbbell beads is obtained through the rigidity constraint of the center-to-center vector of the dumbbell using its Langevin equation. By directly averaging via the Langevin equation, the evolution of the center-to-center vector, and the configuration tensor are derived. The stress expressions for the dumbbell from the Langevin equation, and the diffusion equation for the orientation distribution function of the center-to-center vector of the dumbbell are also derived, and the final expressions agree with established results from other methods. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Super-concentrated alkali hydroxide electrolytes for rechargeable Zn batteries

Authors: Yilin Ma, Jiajia Huang, Shengyong Gao, iangyu Li, Zhibin Yi, Diwen Xiao, Cheuk Kai Kevin Chan, Ding Pan, Qing Chen

Abstract: Rechargeable Zn batteries offer safe, inexpensive energy storage, but when deeply discharged to compete with lithium-ion batteries, they are plagued by parasitic reactions at the Zn anodes. We apply super-concentrated alkaline electrolytes to suppress two key parasitic reactions, hydrogen evolution and ZnO passivation. An electrolyte with 15 M KOH displays a broad electrochemical window (>2.5 V on… ▽ More Rechargeable Zn batteries offer safe, inexpensive energy storage, but when deeply discharged to compete with lithium-ion batteries, they are plagued by parasitic reactions at the Zn anodes. We apply super-concentrated alkaline electrolytes to suppress two key parasitic reactions, hydrogen evolution and ZnO passivation. An electrolyte with 15 M KOH displays a broad electrochemical window (>2.5 V on Au), a high ZnO solubility (>1.5 M), and an exceptionally high ionic conductivity (>0.27 S/cm at 25 C). Spectroscopies and ab-initio molecular dynamics simulation suggest K+-OH- pairs and a tightened water network to underpin the stability. The simulation further reveals unique triggered proton hopping that offsets the lack of water wires to sustain the conductivity. Low hydrogen evolution, confirmed via online mass spectroscopy, and slow passivation enable a NiOOH||Zn battery to deliver a cumulative capacity of 8.4 Ah cm-2 and a Zn-air battery to last for over 110 hours. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Deep generative modelling of canonical ensemble with differentiable thermal properties

Authors: Shuo-Hui Li, Yao-Wen Zhang, Ding Pan

Abstract: We propose a variational modelling method with differentiable temperature for canonical ensembles. Using a deep generative model, the free energy is estimated and minimized simultaneously in a continuous temperature range. At optimal, this generative model is a Boltzmann distribution with temperature dependence. The training process requires no dataset, and works with arbitrary explicit density ge… ▽ More We propose a variational modelling method with differentiable temperature for canonical ensembles. Using a deep generative model, the free energy is estimated and minimized simultaneously in a continuous temperature range. At optimal, this generative model is a Boltzmann distribution with temperature dependence. The training process requires no dataset, and works with arbitrary explicit density generative models. We applied our method to study the phase transitions (PT) in the Ising and XY models, and showed that the direct-sampling simulation of our model is as accurate as the Markov Chain Monte Carlo (MCMC) simulation, but more efficient. Moreover, our method can give thermodynamic quantities as differentiable functions of temperature akin to an analytical solution. The free energy aligns closely with the exact one to the second-order derivative, so this inclusion of temperature dependence enables the otherwise biased variational model to capture the subtle thermal effects at the PTs. These findings shed light on the direct simulation of physical systems using deep generative models △ Less

Submitted 28 April, 2024; originally announced April 2024.

Comments: Main text: 4.5 pages, 2 figures. Supplement: 9 pages

Superconducting switching jump induced missing first Shapiro step in Al-InSb nanosheet Josephson junctions

Authors: Xingjun Wu, Haitian Su, Chuanchang Zeng, Ji-Yin Wang, Shili Yan, Dong Pan, Jianhua Zhao, Po Zhang, H. Q. Xu

Abstract: The absence of odd-order Shapiro steps is one of the predicted signatures for topological superconductors. Experimentally, the missing first-order Shapiro step has been reported in several superconducting systems presumably to be topologically non-trivial, as well as in the topologically trivial regime of superconductor-semiconductor Josephson junctions. In this work, we revisit the missing first… ▽ More The absence of odd-order Shapiro steps is one of the predicted signatures for topological superconductors. Experimentally, the missing first-order Shapiro step has been reported in several superconducting systems presumably to be topologically non-trivial, as well as in the topologically trivial regime of superconductor-semiconductor Josephson junctions. In this work, we revisit the missing first Shapiro step signature in the topologically trivial regime of Al-InSb nanosheet Josephson junctions under microwave irradiation. The missing first Shapiro step is found to be accompanied by a sharp voltage jump during the superconducting switching and reappears when the jump is softened by increasing temperature or magnetic field. The missing first Shapiro step also reappears with an increased microwave frequency. The sharp switching jump, existing without microwave irradiation, deviates from the relation given by the standard resistively shunted junction (RSJ) model. Missing Shapiro step signatures are qualitatively captured by introducing the sharp voltage jump into the RSJ model. This work reveals a common, yet overlooked, phenomenon that leads to the missing first Shapiro step, providing a new perspective on fractional Josephson experiments. △ Less

Submitted 12 March, 2024; originally announced March 2024.

Jamming is a first-order transition with quenched disorder in amorphous materials sheared by cyclic quasistatic deformations

Authors: Yue Deng, Deng Pan, Yuliang Jin

Abstract: Jamming is an athermal transition between flowing and rigid states in amorphous systems such as granular matter, colloidal suspensions, complex fluids and cells. The jamming transition seems to display mixed aspects of a first-order transition, evidenced by a discontinuity in the coordination number, and a second-order transition, indicated by power-law scalings and diverging lengths. Here we demo… ▽ More Jamming is an athermal transition between flowing and rigid states in amorphous systems such as granular matter, colloidal suspensions, complex fluids and cells. The jamming transition seems to display mixed aspects of a first-order transition, evidenced by a discontinuity in the coordination number, and a second-order transition, indicated by power-law scalings and diverging lengths. Here we demonstrate that jamming is a first-order transition with quenched disorder in cyclically sheared systems with quasistatic deformations, in two and three dimensions. Based on scaling analyses, we show that fluctuations of the jamming density in finite-sized systems have important consequences on the finite-size effects of various quantities, resulting in a square relationship between disconnected and connected susceptibilities, a key signature of the first-order transition with quenched disorder. This study puts the jamming transition into the category of a broad class of transitions in disordered systems where sample-to-sample fluctuations dominate over thermal fluctuations, suggesting that the nature and behavior of the jamming transition might be better understood within the developed theoretical framework of the athermally driven random-field Ising model. △ Less

Submitted 24 July, 2024; v1 submitted 4 March, 2024; originally announced March 2024.

Comments: 18 pages, 13 figures

Microwave-assisted unidirectional superconductivity in Al-InAs nanowire-Al junctions under magnetic fields

Authors: Haitian Su, Ji-Yin Wang, Han Gao, Yi Luo, Shili Yan, Xingjun Wu, Guoan Li, Jie Shen, Li Lu, Dong Pan, Jianhua Zhao, Po Zhang, H. Q. Xu

Abstract: Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect". Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irradiation and… ▽ More Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect". Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irradiation and magnetic fields. We observe an enhancement of superconducting diode effect under microwave driving, featured by a horizontal offset of the zero-voltage step in the voltage-current characteristic that increases with microwave power. Devices reach the unidirectional superconductivity regime at sufficiently high driving amplitudes. The offset changes sign with the reversal of the magnetic field direction. Meanwhile, the offset magnitude exhibits a roughly linear response to the microwave power in dBm when both the power and the magnetic field are large. The signatures observed are reminiscent of a recent theoretical proposal using the resistively shunted junction (RSJ) model. However, the experimental results are not fully explained by the RSJ model, indicating a new mechanism for unidirectional superconductivity that is possibly related to non-equilibrium dynamics or dissipation in periodically driven superconducting systems. △ Less

Submitted 5 August, 2024; v1 submitted 3 February, 2024; originally announced February 2024.

New Approach to Strong Correlation: Twisting Hubbard into the Orbital Hatsugai-Kohmoto Model

Authors: Peizhi Mai, Jinchao Zhao, Gaurav Tenkila, Nico A. Hackner, Dhruv Kush, Derek Pan, Philip W. Phillips

Abstract: We present the $n$-orbital extension of the Hatsugai-Kohmoto (HK) model to the orbital HK (OHK) model which obtains by covering the Brillouin zone with $N/n$ Hubbard clusters each containing $n$-sites all connected via twisted boundary conditions. We show that this defines a systematic computational scheme to go from $n=1$ ``band'' HK to the full Hubbard model. Further, through powerful scaling ar… ▽ More We present the $n$-orbital extension of the Hatsugai-Kohmoto (HK) model to the orbital HK (OHK) model which obtains by covering the Brillouin zone with $N/n$ Hubbard clusters each containing $n$-sites all connected via twisted boundary conditions. We show that this defines a systematic computational scheme to go from $n=1$ ``band'' HK to the full Hubbard model. Further, through powerful scaling arguments, we show that the convergence to Hubbard goes as $1/n^{2d}$ for $n^d$-orbital HK on a $d$-dimensional system implying that all the fluctuations vanish in $d=\infty$. As evidence for the above, we employ exact diagonalization and DMRG to show that the OHK model matches the exact (from Bethe ansatz) ground state energy of the 1d Hubbard model within 1$\%$ with just $n=10$ orbitals. For a square lattice, we recover an insulating state regardless of the strength of the interactions, double occupancy in agreement with state of the art simulations, dynamical spectral weight transfer, short-range antiferromagnetic correlations and charge neutral excitations leading to the algebraic temperature dependence of the specific heat, all with a fraction of the computational time of more advanced cluster methods and making it possible to obtain analytical insights. The success of OHK and its rapid convergence to the Hubbard model reiterates that a fixed point controls the physics. Consequently, the $n$-orbital HK model offers a new tool for strongly correlated quantum matter. △ Less

Submitted 11 July, 2024; v1 submitted 16 January, 2024; originally announced January 2024.

Comments: 7 pages + supplement (greatly expanded revision)

Unveiling the hidden reaction kinetic network of carbon dioxide in supercritical aqueous solutions

Authors: Chu Li, Yuan Yao, Ding Pan

Abstract: Dissolution of CO$_2$ in water followed by the subsequent hydrolysis reactions is of great importance to the global carbon cycle, and carbon capture and storage. Despite enormous previous studies, the reactions are still not fully understood at the atomistic scale. Here, we combined ab initio molecular dynamics simulations with Markov state models to elucidate the reaction mechanisms and kinetics… ▽ More Dissolution of CO$_2$ in water followed by the subsequent hydrolysis reactions is of great importance to the global carbon cycle, and carbon capture and storage. Despite enormous previous studies, the reactions are still not fully understood at the atomistic scale. Here, we combined ab initio molecular dynamics simulations with Markov state models to elucidate the reaction mechanisms and kinetics of CO$_2$ in supercritical water both in the bulk and nanoconfined states. The integration of unsupervised learning with first-principles data allows us to identify complex reaction coordinates and pathways automatically instead of a priori human speculation. Interestingly, our unbiased modelling found a novel pathway of dissolving CO$_2$(aq) under graphene nanoconfinement, involving the pyrocarbonate anion (C$_2$O$_5^{2-}$(aq)) as an intermediate state. The pyrocarbonate anion was previously hypothesized to have a fleeting existence in water; however our study reveals that it is a crucial reaction intermediate and stable carbon species in the nanoconfined solutions. We even observed the formation of pyrocarbonic acid (H$_2$C$_2$O$_5$(aq)), which was unknown in water. The unexpected appearance of pyrocarbonates is related to the superionic behavior of the confined solutions. We also found that carbonation reactions involve collective proton transfer along transient water wires, which exhibits concerted behavior in the bulk solution but proceeds stepwise under nanoconfinement. Our study highlights the importance of large oxocarbons in aqueous carbon reactions, with great implications for the deep carbon cycle and the sequestration of CO$_2$. △ Less

Submitted 22 April, 2024; v1 submitted 13 January, 2024; originally announced January 2024.

Gate-Compatible Circuit Quantum Electrodynamics in a Three-Dimensional Cavity Architecture

Authors: Zezhou Xia, Jierong Huo, Zonglin Li, Jianghua Ying, Yulong Liu, Xin-Yi Tang, Yuqing Wang, Mo Chen, Dong Pan, Shan Zhang, Qichun Liu, Tiefu Li, Lin Li, Ke He, Jianhua Zhao, Runan Shang, Hao Zhang

Abstract: Semiconductor-based superconducting qubits offer a versatile platform for studying hybrid quantum devices in circuit quantum electrodynamics (cQED) architecture. Most of these cQED experiments utilize coplanar waveguides, where the incorporation of DC gate lines is straightforward. Here, we present a technique for probing gate-tunable hybrid devices using a three-dimensional (3D) microwave cavity.… ▽ More Semiconductor-based superconducting qubits offer a versatile platform for studying hybrid quantum devices in circuit quantum electrodynamics (cQED) architecture. Most of these cQED experiments utilize coplanar waveguides, where the incorporation of DC gate lines is straightforward. Here, we present a technique for probing gate-tunable hybrid devices using a three-dimensional (3D) microwave cavity. A recess is machined inside the cavity wall for the placement of devices and gate lines. We validate this design using a hybrid device based on an InAs-Al nanowire Josephson junction. The coupling between the device and the cavity is facilitated by a long superconducting strip, the antenna. The Josephson junction and the antenna together form a gatemon qubit. We further demonstrate the gate-tunable cavity shift and two-tone qubit spectroscopy. This technique could be used to probe various quantum devices and materials in a 3D cQED architecture that requires DC gate voltages. △ Less

Submitted 19 March, 2024; v1 submitted 13 November, 2023; originally announced November 2023.

Journal ref: Phys. Rev. Applied 21, 034031 (2024)

Conduction modulation of solution-processed two-dimensional materials

Authors: Songwei Liu, Xiaoyue Fan, Yingyi Wen, Pengyu Liu, Yang Liu, Jingfang Pei, Wenchen Yang, Lekai Song, Danmei Pan, Teng Ma, Yue Lin, Gang Wang, Guohua Hu

Abstract: Solution-processed two-dimensional (2D) materials hold promise for their scalable applications. However, the random, fragmented nature of the solution-processed nanoflakes and the poor percolative conduction through their discrete networks limit the performance of the enabled devices. To overcome the problem, we report conduction modulation of the solution-processed 2D materials via the Stark effe… ▽ More Solution-processed two-dimensional (2D) materials hold promise for their scalable applications. However, the random, fragmented nature of the solution-processed nanoflakes and the poor percolative conduction through their discrete networks limit the performance of the enabled devices. To overcome the problem, we report conduction modulation of the solution-processed 2D materials via the Stark effect. Using liquid-phase exfoliated molybdenum disulfide (MoS2) as an example, we demonstrate nonlinear conduction modulation with a switching ratio of >105 by the local fields from the interfacial ferroelectric P(VDF-TrFE). Through density-functional theory calculations and in situ Raman scattering and photoluminescence spectroscopic analysis, we understand the modulation arises from a charge redistribution in the solution-processed MoS2. Beyond MoS2, we show the modulation may be viable for the other solution-processed 2D materials and low-dimensional materials. The effective modulation can open their electronic device applications. △ Less

Submitted 7 September, 2023; originally announced September 2023.

Raman and IR spectra of water under graphene nanoconfinement at ambient and extreme pressure-temperature conditions: a first-principles study

Authors: Rui Hou, Chu Li, Ding Pan

Abstract: The nanoconfinement of water can result in dramatic differences in its physical and chemical properties compared to bulk water. However, a detailed molecular-level understanding of these properties is still lacking. Vibrational spectroscopy, such as Raman and infrared, is a popular experimental tool for studying the structure and dynamics of water, and is often complemented by atomistic simulation… ▽ More The nanoconfinement of water can result in dramatic differences in its physical and chemical properties compared to bulk water. However, a detailed molecular-level understanding of these properties is still lacking. Vibrational spectroscopy, such as Raman and infrared, is a popular experimental tool for studying the structure and dynamics of water, and is often complemented by atomistic simulations to interpret experimental spectra, but there have been few theoretical spectroscopy studies of nanoconfined water using first-principles methods at ambient conditions, let alone under extreme pressure-temperature conditions. Here, we computed the Raman and IR spectra of water nanoconfined by graphene at ambient and extreme pressure-temperature conditions using ab intio simulations. Our results revealed alterations in the Raman stretching and low-frequency bands due to the graphene confinement. We also found spectroscopic evidence indicating that nanoconfinement considerably changes the tetrahedral hydrogen bond network, which is typically found in bulk water. Furthermore, we observed an unusual bending band in the Raman spectrum at ~10 GPa and 1000 K, which is attributed to the unique molecular structure of confined ionic water. Additionally, we found that at ~20 GPa and 1000 K, confined water transformed into a superionic fluid, making it challenging to identify the IR stretching band. Finally, we computed the ionic conductivity of confined water in the ionic and superionic phases. Our results highlight the efficacy of Raman and IR spectroscopy in studying the structure and dynamics of nanoconfined water in a large pressure-temperature range. Our predicted Raman and IR spectra can serve as a valuable guide for future experiments. △ Less

Submitted 17 August, 2023; originally announced August 2023.

Journal ref: Faraday Discussion 2023

Using Targeted Phonon Excitation to Modulate Thermal Conductivity of Boron Nitride

Authors: Dongkai Pan, Xiao Wan, Zhicheng Zong, Yangjun Qin, Nuo Yang

Abstract: Modulation of thermal conductivity has become a hotspot in the field of heat conduction. A novel strategy based on targeted phonon excitation has been recently proposed for efficient and reversible modulation of thermal conductivity. In this article, the effectiveness of that strategy is further evaluated on hexagonal boron nitride through ab initio methods. Results indicate that thermal conductiv… ▽ More Modulation of thermal conductivity has become a hotspot in the field of heat conduction. A novel strategy based on targeted phonon excitation has been recently proposed for efficient and reversible modulation of thermal conductivity. In this article, the effectiveness of that strategy is further evaluated on hexagonal boron nitride through ab initio methods. Results indicate that thermal conductivity can be increased from 885 W m-1 K-1 to 1151 W m-1 K-1 or decreased to 356 W m-1 K-1, thereby broadening the scope of applicability of this strategy. △ Less

Submitted 4 August, 2023; originally announced August 2023.

Comments: 12 pages, 3 figures

Versatile Method of Engineering the Band Alignment and the Electron Wavefunction Hybridization of Hybrid Quantum Devices

Authors: Guoan Li, Xiaofan Shi, Ting Lin, Guang Yang, Marco Rossi, Ghada Badawy, Zhiyuan Zhang, Jiayu Shi, Degui Qian, Fang Lu, Lin Gu, An-Qi Wang, Bingbing Tong, Peiling Li, Zhaozheng Lyu, Guangtong Liu, Fanming Qu, Ziwei Dou, Dong Pan, Jianhua Zhao, Qinghua Zhang, Erik P. A. M. Bakkers, Michał P. Nowak, Paweł Wójcik, Li Lu , et al. (1 additional authors not shown)

Abstract: With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the stren… ▽ More With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the strength of S-Sm coupling and the proximitized superconducting gap. Here, we fabricate hybrid devices in a generic way with argon milling to modify the interface while maintaining its high quality. First, after the milling the atomically connected S-Sm interfaces appear, resulting in a large induced gap, as well as the ballistic transport revealed by the multiple Andreev reflections and quantized above-gap conductance plateaus. Second, by comparing transport measurement with Schrödinger-Poisson (SP) calculations, we demonstrate that argon milling is capable of varying the band bending strength in the semiconducting wire as the electrons tend to accumulate on the etched surface for longer milling time. Finally, we perform nonlocal measurements on advanced devices to demonstrate the coexistence and tunability of crossed Andreev reflection (CAR) and elastic co-tunneling (ECT) -- key ingredients for building the prototype setup for realization of Kitaev chain and quantum entanglement probing. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems. △ Less

Submitted 24 July, 2024; v1 submitted 13 July, 2023; originally announced July 2023.

Comments: 41 pages, 16 figures

Coulomb screening and scattering in atomically thin transistors across dimensional crossover

Authors: Shihao Ju, Binxi Liang, Jian Zhou, Danfeng Pan, Yi Shi, Songlin Li

Abstract: Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated systems, in response to the changes of three crucial Coulomb factors, including electric permittivity, interaction length, and density of Coulomb impurities. W… ▽ More Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated systems, in response to the changes of three crucial Coulomb factors, including electric permittivity, interaction length, and density of Coulomb impurities. We systematically collect and analyze the trends of electron mobility with respect to the above factors, realized by synergic modulations on channel thicknesses and gating modes in dual-gated MoS2 transistors with asymmetric dielectric cleanliness. Strict configurative form factors are developed to capture the subtle parametric changes across dimensional crossover. A full diagram of the carrier scattering mechanisms, in particular on the pronounced Coulomb scattering, is unfolded. Moreover, we clarify the presence of up to 40% discrepancy in mobility by considering the permittivity modification across dimensional crossover. The understanding is useful for exploiting atomically thin body transistors for advanced electronics. △ Less

Submitted 24 June, 2023; originally announced June 2023.

Comments: 26 pages, 5 figures

Journal ref: Nano Letters, 22, 6671 (2022)

A review on shear jamming

Authors: Deng Pan, Yinqiao Wang, Hajime Yoshino, Jie Zhang, Yuliang Jin

Abstract: Jamming is a ubiquitous phenomenon that appears in many soft matter systems, including granular materials, foams, colloidal suspensions, emulsions, polymers, and cells -- when jamming occurs, the system undergoes a transition from flow-like to solid-like states. Conventionally, the jamming transition occurs when the system reaches a threshold jamming density under isotropic compression, but recent… ▽ More Jamming is a ubiquitous phenomenon that appears in many soft matter systems, including granular materials, foams, colloidal suspensions, emulsions, polymers, and cells -- when jamming occurs, the system undergoes a transition from flow-like to solid-like states. Conventionally, the jamming transition occurs when the system reaches a threshold jamming density under isotropic compression, but recent studies reveal that jamming can also be induced by shear. Shear jamming has attracted much interest in the context of non-equilibrium phase transitions, mechanics and rheology of amorphous materials. Here we review the phenomenology of shear jamming and its related physics. We first describe basic observations obtained in experiments and simulations, and results from theories. Shear jamming is then demonstrated as a "bridge" that connects the rheology of athermal soft spheres and thermal hard spheres. Based on a generalized jamming phase diagram, a universal description is provided for shear jamming in frictionless and frictional systems. We further review the isostaticity and criticality of the shear jamming transition, and the elasticity of shear jammed solids. The broader relevance of shear jamming is discussed, including its relation to other phenomena such as shear hardening, dilatancy, fragility, and discrete shear thickening. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Comments: 19 pages, 9 figures

Journal ref: Physics Reports, Volume 1038, 2 November 2023, Pages 1-18

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

Authors: Shili Yan, Haitian Su, Dong Pan, Weijie Li, Zhaozheng Lyu, Mo Chen, Xingjun Wu, Li Lu, Jianhua Zhao, Ji-Yin Wang, H. Q. Xu

Abstract: High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit couplings, large Landé g-factors and the two dimensional nature. Here, we report an experimental study of proximity induced superconductivity in planar Josephson ju… ▽ More High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit couplings, large Landé g-factors and the two dimensional nature. Here, we report an experimental study of proximity induced superconductivity in planar Josephson junction devices made from free-standing InAs nanosheets. The nanosheets are grown by molecular beam epitaxy and the Josephson junction devices are fabricated by directly contacting the nanosheets with superconductor Al electrodes. The fabricated devices are explored by low-temperature carrier transport measurements. The measurements show that the devices exhibit a gate-tunable supercurrent, multiple Andreev reflections, and a good quality superconductor-semiconductor interface. The superconducting characteristics of the Josephson junctions are investigated at different magnetic fields and temperatures, and are analyzed based on the Bardeen-Cooper-Schrieffer (BCS) theory. The measurements of ac Josephson effect are also conducted under microwave radiations with different radiation powers and frequencies, and integer Shapiro steps are observed. Our work demonstrates that InAs nanosheet based hybrid devices are desired systems for investigating forefront physics, such as the two-dimensional topological superconductivity. △ Less

Submitted 20 April, 2023; originally announced April 2023.

Strong Inter-valley Electron-Phonon Coupling in Magic-Angle Twisted Bilayer Graphene

Authors: Cheng Chen, Kevin P. Nuckolls, Shuhan Ding, Wangqian Miao, Dillon Wong, Myungchul Oh, Ryan L. Lee, Shanmei He, Cheng Peng, Ding Pei, Yiwei Li, Shihao Zhang, Jianpeng Liu, Zhongkai Liu, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Chu Li, Xu Han, Ding Pan, Xi Dai, Chaoxing Liu, B. Andrei Bernevig, Yao Wang, Ali Yazdani , et al. (1 additional authors not shown)

Abstract: The unusual properties of superconductivity in magic-angle twisted bilayer graphene (MATBG) have sparked enormous research interest. However, despite the dedication of intensive experimental efforts and the proposal of several possible pairing mechanisms, the origin of its superconductivity remains elusive. Here, using angle-resolved photoemission spectroscopy with micrometer spatial resolution, w… ▽ More The unusual properties of superconductivity in magic-angle twisted bilayer graphene (MATBG) have sparked enormous research interest. However, despite the dedication of intensive experimental efforts and the proposal of several possible pairing mechanisms, the origin of its superconductivity remains elusive. Here, using angle-resolved photoemission spectroscopy with micrometer spatial resolution, we discover replicas of the flat bands in superconducting MATBG unaligned with its hexagonal boron nitride (hBN) substrate, which are absent in non-superconducting MATBG aligned with the hBN substrate. Crucially, the replicas are evenly spaced in energy, separated by 150 +- 15 meV, signalling the strong coupling of electrons in MATBG to a bosonic mode of this energy. By comparing our observations to simulations, the formation of replicas is attributed to the presence of strong inter-valley electron-phonon coupling to a K-point phonon mode. In total, the observation of these replica flat bands and the corresponding phonon mode in MATBG could provide important information for understanding the origin and the unusual properties of its superconducting phase. △ Less

Submitted 26 March, 2023; originally announced March 2023.

Comments: 17 pages, 4 figures

Quantifying quantum coherence of multiple-charge states in tunable Josephson junctions

Authors: Jiangbo He, Dong Pan, Mingli Liu, Zhaozheng Lyu, Zhongmou Jia, Guang Yang, Shang Zhu, Guangtong Liu, Jie Shen, Sergey N. Shevchenko, Franco Nori, Jianhua Zhao, Li Lu, Fanming Qu

Abstract: Coherence and tunneling play central roles in quantum phenomena. In a tunneling event, the time that a particle spends inside the barrier has been fiercely debated. This problem becomes more complex when tunneling repeatedly occurs back and forth, and when involving many particles. Here we report the measurement of the coherence time of various charge states tunneling in a nanowire-based tunable J… ▽ More Coherence and tunneling play central roles in quantum phenomena. In a tunneling event, the time that a particle spends inside the barrier has been fiercely debated. This problem becomes more complex when tunneling repeatedly occurs back and forth, and when involving many particles. Here we report the measurement of the coherence time of various charge states tunneling in a nanowire-based tunable Josephson junction; including single charges, multiple charges, and Cooper pairs. We studied all the charge tunneling processes using Landau-Zener-Stückelberg-Majorana (LZSM) interferometry, and observed high-quality interference patterns. In particular, the coherence time of the charge states was extracted from the interference fringes in Fourier space. In addition, our measurements show the break-up of Cooper pairs, from a macroscopic quantum coherent state to individual particle states. Besides the fundamental research interest, our results also establish LZSM interferometry as a powerful technique to explore the coherence time of charges in hybrid devices. △ Less

Submitted 5 March, 2023; originally announced March 2023.

Comments: 21+15 pages, 4+9 figures

Journal ref: npj Quantum Information 10, 1 (2024)

Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor

Authors: Weijie Li, Zhihai Liu, Jingwei Mu, Yi Luo, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the few-electron regime by direct transport measurements and by charge-sensor detection measurements. The measurements of the charge stability diagram for a capacitivel… ▽ More A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the few-electron regime by direct transport measurements and by charge-sensor detection measurements. The measurements of the charge stability diagram for a capacitively coupled, parallel double-QD formed from a QD in the TQD and the sensor QD show a visible capacitance coupling between the TQD and the sensor QD, indicating a good sensitivity of the charge sensor. The charge stability diagrams of the TQD are measured by the charge sensor and the global features seen in the measured charge stability diagrams are well reproduced by the simultaneous measurements of the direct transport current through the TQD and by the simulation made based on an effective capacitance network model. The complex charge stability diagrams of the TQD are measured in detail with the integrated charge sensor in an energetically degenerate region, where all the three QDs are on or nearly on resonance, and the formations of quadruple points and of all possible eight charge states are observed. In addition, the operation of the TQD as a quantum cellular automata is demonstrated and discussed. △ Less

Submitted 2 March, 2023; originally announced March 2023.

Comments: 18 pages, 4 figures, Supplementary Information included

Journal ref: Adv. Quantum Technol. 6, 2200158 (2023)

Gate-tunable negative differential conductance in hybrid semiconductor-superconductor devices

Authors: Mingli Liu, Dong Pan, Tian Le, Jiangbo He, Zhongmou Jia, Shang Zhu, Guang Yang, Zhaozheng Lyu, Guangtong Liu, Jie Shen, Jianhua Zhao, Li Lu, Fanming Qu

Abstract: Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor-superconductor devices, i.e., normal metal-superconducting nanowire-normal metal and normal m… ▽ More Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor-superconductor devices, i.e., normal metal-superconducting nanowire-normal metal and normal metal-superconducting nanowire-superconductor devices. Specifically, we study the dependence of the NDCs on back-gate voltage and magnetic field. When the back-gate voltage decreases, these NDCs weaken and evolve into positive differential conductance dips; and meanwhile they move away from the superconducting gap towards high bias voltage, and disappear eventually. In addition, with the increase of magnetic field, the NDCs/dips follow the evolution of the superconducting gap, and disappear when the gap closes. We interpret these observations and reach a good agreement by combining the Blonder-Tinkham-Klapwijk (BTK) model and the critical supercurrent effect in the nanowire, which we call the BTK-supercurrent model. Our results provide an in-depth understanding of the tunneling transport in hybrid semiconductor-superconductor devices. △ Less

Submitted 28 February, 2023; originally announced March 2023.

Comments: 15+6 pages, 4+6 figures

Journal ref: Chin. Phys. Lett. 40 067301 (2023)

Gatemon qubit based on a thin InAs-Al hybrid nanowire

Authors: Jierong Huo, Zezhou Xia, Zonglin Li, Shan Zhang, Yuqing Wang, Dong Pan, Qichun Liu, Yulong Liu, Zhichuan Wang, Yichun Gao, Jianhua Zhao, Tiefu Li, Jianghua Ying, Runan Shang, Hao Zhang

Abstract: We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time $T_1\sim$0.56 $μ$s and the dephasing time $T_2^* \sim$0.38 $μ$s. Since thin InAs-Al nanowires can have fewer or s… ▽ More We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time $T_1\sim$0.56 $μ$s and the dephasing time $T_2^* \sim$0.38 $μ$s. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics. △ Less

Submitted 8 February, 2023; originally announced February 2023.

Comments: Raw data and processing codes within this paper are available at: https://doi.org/10.5281/zenodo.7620737

Journal ref: Chin. Phys. Lett. 40, 047302 (2023)

Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data

Authors: Harrison Jin, Hanqing Zhu, Keren Zhu, Thomas Leonard, Jaesuk Kwon, Mahshid Alamdar, Kwangseok Kim, Jungsik Park, Naoki Hase, David Z. Pan, Jean Anne C. Incorvia

Abstract: With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conversion. Analog content-addressable memories (ACAM) are being recently studied for in-memory computing to efficiently convert between analog and digital signals. Magnetic memory elements such as magnetic tunnel junctions (MTJs) could be useful for AC… ▽ More With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conversion. Analog content-addressable memories (ACAM) are being recently studied for in-memory computing to efficiently convert between analog and digital signals. Magnetic memory elements such as magnetic tunnel junctions (MTJs) could be useful for ACAM due to their low read/write energy and high endurance, but MTJs are usually restricted to digital values. The spin orbit torque-driven domain wall-magnetic tunnel junction (DW-MTJ) has been recently shown to have multi-bit function. Here, an ACAM circuit is studied that uses two domain wall-magnetic tunnel junctions (DW-MTJs) as the analog storage elements. Prototype DW-MTJ data is input into the magnetic ACAM (MACAM) circuit simulation, showing ternary CAM function. Device-circuit co-design is carried out, showing that 8-10 weight bits are achievable, and that designing asymmetrical spacing of the available DW positions in the device leads to evenly spaced ACAM search bounds. Analyzing available spin orbit torque materials shows platinum provides the largest MACAM search bound while still allowing spin orbit torque domain wall motion, and that the circuit is optimized with minimized MTJ resistance, minimized spin orbit torque material resistance, and maximized tunnel magnetoresistance. These results show the feasibility of using DW-MTJs for MACAM and provide design parameters. △ Less

Submitted 11 January, 2023; originally announced January 2023.

Comments: 8 pages, 8 figures

In situ tuning of dynamical Coulomb blockade on Andreev bound states in hybrid nanowire devices

Authors: Shan Zhang, Zhichuan Wang, Dong Pan, Zhaoyu Wang, Zonglin Li, Zitong Zhang, Yichun Gao, Zhan Cao, Gu Zhang, Lei Liu, Lianjun Wen, Ran Zhuo, Dong E. Liu, Ke He, Runan Shang, Jianhua Zhao, Hao Zhang

Abstract: Electron interactions in quantum devices can exhibit intriguing phenomena. One example is assembling an electronic device in series with an on-chip resistor. The quantum laws of electricity of the device is modified at low energies and temperatures by dissipative interactions induced by the resistor, a phenomenon known as dynamical Coulomb blockade (DCB). The DCB strength is usually non-adjustable… ▽ More Electron interactions in quantum devices can exhibit intriguing phenomena. One example is assembling an electronic device in series with an on-chip resistor. The quantum laws of electricity of the device is modified at low energies and temperatures by dissipative interactions induced by the resistor, a phenomenon known as dynamical Coulomb blockade (DCB). The DCB strength is usually non-adjustable in a fixed environment defined by the resistor. Here, we design an on-chip circuit for InAs-Al hybrid nanowires where the DCB strength can be gate-tuned in situ. InAs-Al nanowires could host Andreev or Majorana zero-energy states. This technique enables tracking the evolution of the same state while tuning the DCB strength from weak to strong. We observe the transition from a zero-bias conductance peak to split peaks for Andreev zero-energy states. Our technique opens the door to in situ tuning interaction strength on zero-energy states. △ Less

Submitted 12 December, 2023; v1 submitted 14 November, 2022; originally announced November 2022.

Journal ref: Phys. Rev. B 108, 235416 (2023)

Truncated atomic plane wave method for the subband structure calculations of Moiré systems

Authors: Wangqian Miao, Chu Li, Xu Han, Ding Pan, Xi Dai

Abstract: We propose a highly efficient and accurate numerical scheme named Truncated Atomic Plane Wave (TAPW) method to determine the subband structure of Twisted Bilayer Graphene (TBG) inspired by BM model. Our method utilizes real space information of carbon atoms in the moiré unit cell and projects the full tight binding Hamiltonian into a much smaller subspace using atomic plane waves. We present accur… ▽ More We propose a highly efficient and accurate numerical scheme named Truncated Atomic Plane Wave (TAPW) method to determine the subband structure of Twisted Bilayer Graphene (TBG) inspired by BM model. Our method utilizes real space information of carbon atoms in the moiré unit cell and projects the full tight binding Hamiltonian into a much smaller subspace using atomic plane waves. We present accurate electronic band structures of TBG in a wide range of twist angles together with detailed moiré potential and screened Coulomb interaction at the first magic angle using our new method. Furthermore, we generalize our formalism to solve the problem of low frequency moiré phonons in TBG. △ Less

Submitted 15 February, 2023; v1 submitted 5 October, 2022; originally announced October 2022.

Modulating Thermal Conductivity via Targeted Phonon Excitation

Authors: Xiao Wan, Dongkai Pan, Jing-Tao Lü, Sebastian Volz, Lifa Zhang, Qing Hao, Yangjun Qin, Zhicheng Zong, Nuo Yang

Abstract: Thermal conductivity is a critical material property in numerous applications, such as those related to thermoelectric devices and heat dissipation. Effectively modulating thermal conductivity has become a great concern in the field of heat conduction. In this study, a quantum strategy is proposed to modulate thermal conductivity by exciting targeted phonons. The results show that the thermal cond… ▽ More Thermal conductivity is a critical material property in numerous applications, such as those related to thermoelectric devices and heat dissipation. Effectively modulating thermal conductivity has become a great concern in the field of heat conduction. In this study, a quantum strategy is proposed to modulate thermal conductivity by exciting targeted phonons. The results show that the thermal conductivity of graphene can be tailored in the range of 1559 W/m-K (49%) to 4093 W/m-K (128%), compared with the intrinsic value of 3189 W/m-K. A similar trend is also observed for graphene nanoribbons. The results are obtained through both ab initio calculations and molecular dynamics simulations. This brand-new quantum strategy to modulate thermal conductivity paves a way for quantum heat conduction. △ Less

Submitted 5 April, 2023; v1 submitted 20 September, 2022; originally announced September 2022.

Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices

Authors: Li Zhang, Yuanjie Chen, Dong Pan, Shaoyun Huang, Jianhua Zhao, H. Q. Xu

Abstract: Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices are epitaxially grown, free-standing, zincblende crystals and are in micrometer lateral sizes. The hBN and graphite flakes are obtained by exfoliation. Each tril… ▽ More Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices are epitaxially grown, free-standing, zincblende crystals and are in micrometer lateral sizes. The hBN and graphite flakes are obtained by exfoliation. Each trilayer is made by successively stacking an InSb nanosheet on an hBN flake and on a graphite flake using a home-made alignment stacking/transfer setup. The fabricated single- and double-gate devices are characterized by electrical and/or magnetotransport measurements. In all these devices, the graphite and hBN flakes are employed as the bottom gates and the gate dielectrics. The measurements of a fabricated single bottom-gate field-effect device show that the InSb nanosheet in the device has an electron field-effect mobility of ~7300 cm$^2$V$^{-1}$s$^{-1}$ and a low gate hysteresis of ~0.05 V at 1.9 K. The measurements of a double-gate Hall-bar device show that both the top and the bottom gate exhibit strong capacitive couplings to the InSb nanosheet channel and can thus tune the nanosheet channel conduction effectively. The electron Hall mobility in the InSb nanosheet of the Hall-bar device is extracted to be larger than 1.1$\times$10$^4$ cm$^2$V$^{-1}$s$^{-1}$ at a sheet electron density of ~6.1$\times$10$^{11}$ cm$^{-2}$ and 1.9 K and, thus, the device exhibits well-defined Shubnikov-de Haas oscillations. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 18 pages, 3 figures, Supplementary Information

Journal ref: Nanotechnology 33, 325303 (2022)

Electrically tunable spin-orbit interaction in an InAs nanosheet

Authors: Furong Fan, Yuanjie Chen, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with use of the dual gate. The quantum transport c… ▽ More We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with use of the dual gate. The quantum transport characteristics of the InAs nanosheet are investigated by magnetoconductance measurements at low temperatures. It is shown that the electron transport in the nanosheet can be tuned from the weak antilocalization to the weak localization and then back to the weak antilocalization regime with a voltage applied over the dual gate without a change in carrier density. The spin-orbit length extracted from the magnetoconductance measurements at a constant carrier density exhibits a peak value at which the SOI of the Rashba type is suppressed and the spin relaxation due to the presence of an SOI of the Dresselhaus type in the nanosheet can be revealed. Energy band diagram simulations have also been carried out for the device at the experimental conditions and the physical insights into the experimental observations have been discussed in light of the results of simulations. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 17 pages, 5 figures and Supplementary Materials

Journal ref: Nanoscale Adv. 4, 2642 (2022)

Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

Authors: Li Zhang, Dong Pan, Yuanjie Chen, Jianhua Zhao, H. Q. Xu

Abstract: A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and… ▽ More A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding ~18000 cm$^2$V$^{-1}$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass m$^*$$\sim$0.028 m$_0$ and the quantum lifetime $τ$$\sim$0.046 ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 20 pages, 5 figures

Journal ref: Chin. Phys. B 31, 098507 (2022)

Shear hardening in frictionless amorphous solids near the jamming transition

Authors: Deng Pan, Fanlong Meng, Yuliang Jin

Abstract: The jamming transition, generally manifested by a rapid increase of rigidity under compression (i.e., compression hardening), is ubiquitous in amorphous materials. Here we study shear hardening in deeply annealed frictionless packings generated by numerical simulations, reporting critical scalings absent in compression hardening. We demonstrate that hardening is a natural consequence of shear-indu… ▽ More The jamming transition, generally manifested by a rapid increase of rigidity under compression (i.e., compression hardening), is ubiquitous in amorphous materials. Here we study shear hardening in deeply annealed frictionless packings generated by numerical simulations, reporting critical scalings absent in compression hardening. We demonstrate that hardening is a natural consequence of shear-induced memory destruction. Based on an elasticity theory, we reveal two independent microscopic origins of shear hardening: (i) the increase of the interaction bond number and (ii) the emergence of anisotropy and long-range correlations in the orientations of bonds, the latter highlights the essential difference between compression and shear hardening. Through the establishment of physical laws specific to anisotropy, our work completes the criticality and universality of jamming transition, and the elasticity theory of amorphous solids. △ Less

Submitted 9 February, 2023; v1 submitted 18 August, 2022; originally announced August 2022.

Comments: 18 pages, 14 figures

Journal ref: PNAS Nexus, Volume 2, Issue 3, March 2023, pgad047

Fano Interference in a Single-Molecule Junction

Authors: Yiping Ouyang, Rui Wang, Deping Guo, Yang-Yang Ju, Danfeng Pan, Xuecou Tu, Lin Kang, Jian Chen, Peiheng Wu, Xuefeng Wang, Jianguo Wan, Minhao Zhang, Wei Ji, Yuan-Zhi Tan, Su-Yuan Xie, Fengqi Song

Abstract: Trends of miniaturized devices and quantum interference electronics lead to the long desire of Fano interference in single-molecule junctions, here, which is successfully demonstrated using the 2,7-di(4-pyridyl)-9,9'-spirobifluorene molecule with a long backbone group and a short side group. Experimentally, the two electrically coupled groups are found to contribute to two blurred degenerate point… ▽ More Trends of miniaturized devices and quantum interference electronics lead to the long desire of Fano interference in single-molecule junctions, here, which is successfully demonstrated using the 2,7-di(4-pyridyl)-9,9'-spirobifluorene molecule with a long backbone group and a short side group. Experimentally, the two electrically coupled groups are found to contribute to two blurred degenerate points in the differential conductance mapping. This forms a characteristic non-centrosymmetric double-crossing feature, with distinct temperature response for each crossing. Theoretically, we describe the practical in-junction electron transmission using a new two-tunnelling-channel coupling model and obtain a working formula with a Fano term and a Breit-Wigner term. The formula is shown to provide a good fit for all the mapping data and their temperature dependence in three dimensions, identifying the Fano component. Our work thus forms a complete set of evidence of the Fano interference in a single-molecule junction induced by two-tunnelling-channel coupling transport. Density functional theory calculations are used to corroborate this new physics. △ Less

Submitted 18 August, 2022; originally announced August 2022.

Comments: 13 pages (main text), 4000 Words (main text), 5 figures

Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures

Authors: Zhe Ying, Bo Chen, Chunfeng Li, Boyuan Wei, Zheng Dai, Fengyi Guo, Danfeng Pan, Haijun Zhang, Di Wu, Xuefeng Wang, Shuai Zhang, Fucong Fei, Fengqi Song

Abstract: Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostruct… ▽ More Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices. △ Less

Submitted 13 December, 2022; v1 submitted 28 May, 2022; originally announced May 2022.

Plateau regions for zero-bias peaks within 5% of the quantized conductance value $2e^2/h$

Authors: Zhaoyu Wang, Huading Song, Dong Pan, Zitong Zhang, Wentao Miao, Ruidong Li, Zhan Cao, Gu Zhang, Lei Liu, Lianjun Wen, Ran Zhuo, Dong E. Liu, Ke He, Runan Shang, Jianhua Zhao, Hao Zhang

Abstract: Probing an isolated Majorana zero mode is predicted to reveal a tunneling conductance quantized at $2e^2/h$ at zero temperature. Experimentally, a zero-bias peak (ZBP) is expected and its height should remain robust against relevant parameter tuning, forming a quantized plateau. Here, we report the observation of large ZBPs in a thin InAs-Al hybrid nanowire device. The ZBP height can stick close t… ▽ More Probing an isolated Majorana zero mode is predicted to reveal a tunneling conductance quantized at $2e^2/h$ at zero temperature. Experimentally, a zero-bias peak (ZBP) is expected and its height should remain robust against relevant parameter tuning, forming a quantized plateau. Here, we report the observation of large ZBPs in a thin InAs-Al hybrid nanowire device. The ZBP height can stick close to $2e^2/h$, mostly within $5\%$ tolerance, by sweeping gate voltages and magnetic field. We further map out the phase diagram and identify two plateau regions in the phase space. Despite the presence of disorder and quantum dots, our result constitutes a step forward towards establishing Majorana zero modes. △ Less

Submitted 14 October, 2022; v1 submitted 13 May, 2022; originally announced May 2022.

Comments: Raw data and processing codes within this paper are available at https://doi.org/10.5281/zenodo.6546974

Journal ref: Phys. Rev. Lett. 129, 167702 (2022)

Large Andreev bound state zero bias peaks in a weakly dissipative environment

Authors: Zhichuan Wang, Shan Zhang, Dong Pan, Gu Zhang, Zezhou Xia, Zonglin Li, Donghao Liu, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Yongqing Li, Dong E. Liu, Runan Shang, Jianhua Zhao, Hao Zhang

Abstract: We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks (ZBPs) near 2e^2/h in tunneling conductance. Probing these large ZBPs using a weakly dissipative lead reveals non-Fermi liquid temperature (T) dependence due to environmental Coulomb blockade (ECB), an interaction effec… ▽ More We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks (ZBPs) near 2e^2/h in tunneling conductance. Probing these large ZBPs using a weakly dissipative lead reveals non-Fermi liquid temperature (T) dependence due to environmental Coulomb blockade (ECB), an interaction effect from the lead acting on the nanowire junction. By increasing T, these large ZBPs either show a height increase or a transition from split peaks to a ZBP, both deviate significantly from non-dissipative devices where a Fermi-liquid T dependence is revealed. Our result demonstrates the competing effect between ECB and thermal broadening on Andreev bound states. △ Less

Submitted 18 February, 2022; originally announced February 2022.

Comments: Raw data and processing codes are available at https://doi.org/10.5281/zenodo.6123849

Journal ref: Phys. Rev. B 106, 205421 (2022)

Highly active hydrogen evolution facilitated by topological surface states on a Pd/SnTe metal/topological crystalline insulator heterostructure

Authors: Qing Qu, Bin Liu, Wing Sum Lau, Ding Pan, Iam Keong Sou

Abstract: Recently, topological quantum materials have emerged as a promising electrocatalyst for hydrogen evolution reaction (HER). However, most of their performance largely lags behind noble metals such as benchmark platinum (Pt). In this work, a Pd(20nm)/SnTe(70nm) heterostructure, fabricated by molecular beam epitaxy and electron beam evaporation, is found to display much higher electrocatalytic activi… ▽ More Recently, topological quantum materials have emerged as a promising electrocatalyst for hydrogen evolution reaction (HER). However, most of their performance largely lags behind noble metals such as benchmark platinum (Pt). In this work, a Pd(20nm)/SnTe(70nm) heterostructure, fabricated by molecular beam epitaxy and electron beam evaporation, is found to display much higher electrocatalytic activity than that of a pure Pd(20nm) thin film and even higher than that of a commercial Pt foil. This heterostructure adopts an extracted turnover frequency value more than two times higher than that of the Pd(20nm) thin film at a potential of 0.2 V, indicating a much higher intrinsic activity per Pd site. Density functional theory calculations show that the conventional d-band theory, which works well for many transition metal heterostructures, cannot explain the enhancement of electrocatalytic performance. Instead, we found that the topological surface states (TSSs) of the SnTe (001) underlayer play a key role; electrons transfer from both the Pd surface and the adsorbed H atoms to the TSSs of SnTe (001), resulting in weaker Pd-H binding strength and more favorable hydrogen adsorption free energies. Our work demonstrates for the first time that a metal/topological quantum material heterostructure could be a prominent catalyst to enjoy HER activity outperforming that of a commercial Pt foil and offers a promising direction to optimize the performance of electrocatalysts based on topological quantum materials. △ Less

Submitted 1 September, 2022; v1 submitted 9 December, 2021; originally announced December 2021.

Comments: 40 pages, 17 figures. arXiv admin note: text overlap with arXiv:2102.08062

Suppressing Andreev bound state zero bias peaks using a strongly dissipative lead

Authors: Shan Zhang, Zhichuan Wang, Dong Pan, Hangzhe Li, Shuai Lu, Zonglin Li, Gu Zhang, Donghao Liu, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Runan Shang, Dong E Liu, Jianhua Zhao, Hao Zhang

Abstract: Hybrid semiconductor-superconductor nanowires are predicted to host Majorana zero modes, manifested as zero-bias peaks (ZBPs) in tunneling conductance. ZBPs alone, however, are not sufficient evidence due to the ubiquitous presence of Andreev bound states in the same system. Here, we implement a strongly resistive normal lead in our InAs-Al nanowire devices and show that most of the expected ZBPs,… ▽ More Hybrid semiconductor-superconductor nanowires are predicted to host Majorana zero modes, manifested as zero-bias peaks (ZBPs) in tunneling conductance. ZBPs alone, however, are not sufficient evidence due to the ubiquitous presence of Andreev bound states in the same system. Here, we implement a strongly resistive normal lead in our InAs-Al nanowire devices and show that most of the expected ZBPs, corresponding to zero-energy Andreev bound states, can be suppressed, a phenomenon known as environmental Coulomb blockade. Our result is the first experimental demonstration of this dissipative interaction effect on Andreev bound states and can serve as a possible filter to narrow down ZBP phase diagram in future Majorana searches. △ Less

Submitted 1 November, 2021; originally announced November 2021.

Comments: Raw data and processing codes within this paper are available at https://doi.org/10.5281/zenodo.5630076

Journal ref: Phys. Rev. Lett. 128, 076803 (2022)

Non-linear elasticity, yielding and entropy in amorphous solids

Authors: Deng Pan, Teng Ji, Matteo Baggioli, Li Li, Yuliang Jin

Abstract: The holographic duality has proven successful in linking seemingly unrelated problems in physics.Recently, intriguing correspondences between the physics of soft matter and gravity are emerging,including strong similarities between the rheology of amorphous solids, effective field theories for elasticity and the physics of black holes. However, direct comparisons between theoretical predictions an… ▽ More The holographic duality has proven successful in linking seemingly unrelated problems in physics.Recently, intriguing correspondences between the physics of soft matter and gravity are emerging,including strong similarities between the rheology of amorphous solids, effective field theories for elasticity and the physics of black holes. However, direct comparisons between theoretical predictions and experimental/simulation observations remain limited. Here, we study the effects of non-linear elasticity on the mechanical and thermodynamic properties of amorphous materials responding to shear, using effective field and gravitational theories. The predicted correlations among the non-linear elastic exponent, the yielding strain/stress and the entropy change due to shear are supported qualitatively by simulations of granular matter models. Our approach opens a path towards understanding complex mechanical responses of amorphous solids, such as mixed effects of shear softening and shear hardening, and offers the possibility to study the rheology of solid states and black holes in a unified framework. △ Less

Submitted 13 April, 2022; v1 submitted 30 August, 2021; originally announced August 2021.

Comments: 24 pages, 21 figures

Journal ref: SCIENCE ADVANCES 1 Jun 2022 Vol 8 , Issue 22

Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device

Authors: Huading Song, Zitong Zhang, Dong Pan, Donghao Liu, Zhaoyu Wang, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Dong E Liu, Runan Shang, Jianhua Zhao, Hao Zhang

Abstract: We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer sub-band regime. The four-terminal device design excludes electrode contact resistance, an unknown value which has inevitably affected previously reported devi… ▽ More We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer sub-band regime. The four-terminal device design excludes electrode contact resistance, an unknown value which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero-bias peaks (ZBPs) in differential conductance on the order of $2e^2/h$. Investigating the ZBP evolution by sweeping various gate voltages and magnetic field, we find a transition between a zero-bias peak and a zero-bias dip while the zero-bias conductance sticks close to $2e^2/h$. We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes. △ Less

Submitted 17 July, 2021; originally announced July 2021.

Comments: Raw data and processing codes are available at http://doi.org/10.5281/zenodo.5111639

Journal ref: Phys. Rev. Research 4, 033235 (2022)

Bridging the gap between atomically thin semiconductors and metal leads

Authors: Xiangbin Cai, Zefei Wu, Xu Han, Shuigang Xu, Jiangxiazi Lin, Tianyi Han, Pingge He, Xuemeng Feng, Liheng An, Run Shi, Jingwei Wang, Zhehan Ying, Yuan Cai, Mengyuan Hua, Junwei Liu, Ding Pan, Chun Cheng, Ning Wang

Abstract: Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearl… ▽ More Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the ultralow contact resistance (down to 90 Ohm um in MoS2, towards the quantum limit), the ultrahigh field-effect mobility (up to 358,000 cm2V-1s-1 in WSe2) and the prominent transport characteristics at cryogenic temperatures. This method also offers new possibilities of the local manipulation of structures and electronic properties for TMDSC device design. △ Less

Submitted 1 July, 2021; originally announced July 2021.

Temporal Evolution of Flow in Pore-Networks: From Homogenization to Instability

Authors: Ahmad Zareei, Deng Pan, Ariel Amir

Abstract: We study the dynamics of flow-networks in porous media using a pore-network model. First, we consider a class of erosion dynamics assuming a constitutive law depending on flow rate, local velocities, or shear stress at the walls. We show that depending on the erosion law, the flow may become uniform and homogenized or become unstable and develop channels. By defining an order parameter capturing t… ▽ More We study the dynamics of flow-networks in porous media using a pore-network model. First, we consider a class of erosion dynamics assuming a constitutive law depending on flow rate, local velocities, or shear stress at the walls. We show that depending on the erosion law, the flow may become uniform and homogenized or become unstable and develop channels. By defining an order parameter capturing these different behaviors we show that a phase transition occurs depending on the erosion dynamics. Using a simple model, we identify quantitative criteria to distinguish these regimes and correctly predict the fate of the network, and discuss the experimental relevance of our result. △ Less

Submitted 24 June, 2021; v1 submitted 17 June, 2021; originally announced June 2021.

Comments: 5 pages, 4 figures, plus SI

Ab initio molecular dynamics modelling of organic crystal electro-optical properties

Authors: Hovan Lee, Rui Hou, Ding Pan, Mostafa Shalaby, Cedric Weber

Abstract: Molecular dynamics calculations were preformed on organic crystals 4-N,N-dimethylamino-4'-N'-methyl-stilbazolium tosylate (DAST) and 4-N,N-dimethylamino-4'-N'-methylstilbazolium 2,4,6-trimethylbenzenesulfonate (DSTMS). Vibrational modes of the structures were investigated to examine the single unit cell phononic contribution of the organic crystals to their terahertz generating capabilities. Linea… ▽ More Molecular dynamics calculations were preformed on organic crystals 4-N,N-dimethylamino-4'-N'-methyl-stilbazolium tosylate (DAST) and 4-N,N-dimethylamino-4'-N'-methylstilbazolium 2,4,6-trimethylbenzenesulfonate (DSTMS). Vibrational modes of the structures were investigated to examine the single unit cell phononic contribution of the organic crystals to their terahertz generating capabilities. Linear optical properties were also calculated from snapshots of the molecular dynamics structures through Green-Kubo relations, and compared with experimental transmission. △ Less

Submitted 5 July, 2021; v1 submitted 3 June, 2021; originally announced June 2021.

Comments: 6 pages, 5 figures

Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages

Authors: Jingwei Mu, Weijie Li, Shaoyun Huang, Dong Pan, Yuanjie Chen, Ji-Yin Wang, Jianhua Zhao, H. Q. Xu

Abstract: We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to detect the charge state transition in the other QD (target QD). We investigate the effect of the tunneling barrier asymmetry of the target QD on the detection visibility of charge state transition in the target QD. The cha… ▽ More We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to detect the charge state transition in the other QD (target QD). We investigate the effect of the tunneling barrier asymmetry of the target QD on the detection visibility of charge state transition in the target QD. The charge stability diagrams of the target QD under different configurations of barrier-gate voltages are simultaneously measured via the direct signals of electron transport through the target QD and via the detection signals of charge state transition in the target QD from the sensor QD. We find that the complete Coulomb diamond boundaries of the target QD and the transport processes involving the excited states in the target QD can be observed in the transconductance signals of the sensor QD only when the tunneling barriers of the target QD are nearly symmetric. These phenomena are explained by analyzing the effect of the ratio of the two tunneling rates on the electron transport processes through the target QD. Our results imply that it is important to consider the symmetry of the tunneling couplings when constructing a charge sensor integrated QD device or qubit. △ Less

Submitted 24 May, 2021; originally announced May 2021.

Comments: 18 pages, 5 figures

Journal ref: Nanoscale 14, 14029 (2022)

A double quantum dot defined by top gates in a single crystalline InSb nanosheet

Authors: Yuanjie Chen, Shaoyun Huang, Jingwei Mu, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the… ▽ More We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for developments of quantum computation and quantum simulation technologies. △ Less

Submitted 8 May, 2021; v1 submitted 2 May, 2021; originally announced May 2021.

Comments: 17 pages, 5 figures

Journal ref: Chinese Physics B 30, 128501 (2021)

Optimizing Thermal Transport in Graphene Nanoribbon Based on Phonon Resonance Hybridization

Authors: Xiao Wan, Dengke Ma, Dongkai Pan, Lina Yang, Nuo Yang

Abstract: As a critical way to modulate thermal transport in nanostructures, phonon resonance hybridization has become an issue of great concern in the field of phonon engineering. In this work, we optimized phonon transport across graphene nanoribbon and obtained minimized thermal conductance by means of designing pillared nanostructures based on resonance hybridization. Specifically, the optimization of t… ▽ More As a critical way to modulate thermal transport in nanostructures, phonon resonance hybridization has become an issue of great concern in the field of phonon engineering. In this work, we optimized phonon transport across graphene nanoribbon and obtained minimized thermal conductance by means of designing pillared nanostructures based on resonance hybridization. Specifically, the optimization of thermal conductance was performed by the combination of atomic Green` s function and Bayesian optimization. Interestingly, it is found that thermal conductance decreases non-monotonically with the increasing of number for pillared structure, which is severed as resonator and blocks phonon transport. Further mode-analysis and atomic Green` s function calculations revealed that the anomalous tendency originates from decreased phonon transmission in a wide frequency range. Additionally, nonequilibrium molecular dynamics simulations are performed to verify the results with the consideration of high-order phonon scattering. This finding provides novel insights into the control of phonon transport in nanostructures. △ Less

Submitted 5 April, 2021; originally announced April 2021.

Role of topological surface states and mirror symmetry in topological crystalline insulator SnTe as an efficient electrocatalyst

Authors: Qing Qu, Bin Liu, Hongtao Liu, Jing Liang, Jiannong Wang, Ding Pan, Iam Keong Sou

Abstract: The surface orientation dependence on the hydrogen evolution reaction (HER) performance of topological crystalline insulator (TCI) SnTe thin films is studied. Their intrinsic activities are determined by linear sweep voltammetry and cyclic voltammetry measurements. It is found that SnTe (001) and (111) surfaces exhibit intrinsic activities significantly larger than the (211) surface. Density funct… ▽ More The surface orientation dependence on the hydrogen evolution reaction (HER) performance of topological crystalline insulator (TCI) SnTe thin films is studied. Their intrinsic activities are determined by linear sweep voltammetry and cyclic voltammetry measurements. It is found that SnTe (001) and (111) surfaces exhibit intrinsic activities significantly larger than the (211) surface. Density functional theory calculations reveal that pure (001) and (111) surfaces are not good electrocatalysts, while those with Sn vacancies or partially oxidized surfaces, with the latter as evidenced by X-ray photoelectron spectroscopy, have high activity. The calculated overall performance of the (001) and (111) surfaces with robust topological surface states (TSSs) is better than that of the lowly symmetric (211) surface with fragile or without TSSs, which is further supported by their measured weak antilocalization strength. The high HER activity of SnTe (001) and (111) is attributed to the enhanced charge transfer between H atoms and TSSs. We also address the effect of possible surface facets and the contrast of the HER activity of the available active sites among the three samples. Our study demonstrates that the TSSs and mirror symmetry of TCIs expedite their HER activity. △ Less

Submitted 28 July, 2021; v1 submitted 16 February, 2021; originally announced February 2021.

Comments: 78 pages, 35 figures, 4 tables

Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire

Authors: Jingwei Mu, Shaoyun Huang, Zhi-Hai Liu, Weijie Li, Ji-Yin Wang, Dong Pan, Guang-Yao Huang, Yuanjie Chen, Jianhua Zhao, H. Q. Xu

Abstract: Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to the standard semiconductor chip fabrication technology. However, development of a highly tunable semiconductor multiple QD system still remains as a major chall… ▽ More Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to the standard semiconductor chip fabrication technology. However, development of a highly tunable semiconductor multiple QD system still remains as a major challenge. Here, we demonstrate realization of a highly tunable linear quadruple QD (QQD) in a narrow bandgap semiconductor InAs nanowire with fine finger gate technique. The QQD is studied by electron transport measurements in the linear response regime. Characteristic two-dimensional charge stability diagrams containing four groups of resonant current lines of different slopes are found for the QQD. It is shown that these current lines can be individually assigned as arising from resonant electron transport through the energy levels of different QDs. Benefited from the excellent gate tunability, we also demonstrate tuning of the QQD to regimes where the energy levels of two QDs, three QDs and all the four QDs are energetically on resonance, respectively, with the fermi level of source and drain contacts. A capacitance network model is developed for the linear QQD and the simulated charge stability diagrams based on the model show good agreements with the experiments. Our work presents a solid experimental evidence that narrow bandgap semiconductor nanowires multiple QDs could be used as a versatile platform to achieve integrated qubits for quantum computing and to perform quantum simulations for complex many-body systems. △ Less

Submitted 27 January, 2021; originally announced January 2021.

Comments: 16 pages, 5 figures, Supplementary Materials

Journal ref: Nanoscale 13, 3983 (2021)

Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

Authors: Yuanjie Chen, Shaoyun Huang, Dong Pan, Jianhong Xue, Li Zhang, Jianhua Zhao, H. Q. Xu

Abstract: A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsi… ▽ More A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices. △ Less

Submitted 11 December, 2020; originally announced December 2020.

Comments: 24 pages, 5 figures, Supplementary Information

Journal ref: npj 2D Mater. Appl. 5, 3 (2021)

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor

Authors: Weijie Li, Jingwei Mu, Shaoyun Huang, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the nanowire TQD are studied by measurements of the direct transport signals of the TQD and by detection of the charge state transitions in the TQD via the nanowire… ▽ More A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the nanowire TQD are studied by measurements of the direct transport signals of the TQD and by detection of the charge state transitions in the TQD via the nanowire QD sensor. Excellent agreements in the charge stability diagrams of the TQD obtained by the direct transport measurements and by the charge-state transition detection measurements are achieved. It is shown that the charge stability diagrams are featured by three groups of charge state transition lines of different slopes, corresponding to the changes in the electron occupation numbers of the three individual QDs in the TQD. It is also shown that the integrated nanowire QD sensor is highly sensitive and can detect the charge state transitions in the cases where the direct transport signals of the TQD are too weak to be measurable. Tuning to a regime, where all the three QDs in the TQD are close to be on resonance with the Fermi level of the source and drain reservoirs and co-existence of triple and quadruple points becomes possible, has also been demonstrated with the help of the charge sensor in the region where the direct transport signals of the TQD are hardly visible. △ Less

Submitted 10 December, 2020; originally announced December 2020.

Comments: 17 pages, 5 figures

Journal ref: Appl. Phys. Lett. 117, 262102 (2020)

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Authors: Dong Pan, Huading Song, Shan Zhang, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Zhichuan Wang, Zitong Zhang, Shuai Yang, Jianghua Ying, Wentao Miao, Yongqing Li, Runan Shang, Hao Zhang, Jianhua Zhao

Abstract: Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high density of randomly distributed twin defects and stacking faults, which result in an uncontrolled and non-uniform InAs-Al interface. Furthermore, this type of dis… ▽ More Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high density of randomly distributed twin defects and stacking faults, which result in an uncontrolled and non-uniform InAs-Al interface. Furthermore, this type of disorder can create potential inhomogeneity in the wire, destroy the topological gap, and form trivial sub-gap states mimicking MZM in transport experiments. Further study shows that reducing the InAs nanowire diameter from growth can significantly suppress the formation of these defects and stacking faults. Here, we demonstrate the in situ growth of ultra-thin InAs nanowires with epitaxial Al film by molecular-beam epitaxy. Our InAs diameter (~ 30 nm) is only one-third of the diameters (~ 100 nm) commonly used in literatures. The ultra-thin InAs nanowires are pure phase crystals for various different growth directions, suggesting a low level of disorder. Transmission electron microscopy confirms an atomically sharp and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and $2e^-$ periodic Coulomb blockade at zero magnetic field, a necessary step for future MZM experiments. A large zero bias conductance peak with a peak height reaching 80% of $2e^2/h$ is observed. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 36 pages, 20 figures

Journal ref: Chin. Phys. Lett. 39, 058101 (2022)