Electron interactions in quantum devices can exhibit intriguing phenomena. One example is assembling an electronic device in series with an on-chip resistor. The quantum laws of electricity of the device are modified at low energies and temperatures by dissipative interactions induced by the resistor, a phenomenon known as the dynamical Coulomb blockade (DCB). The DCB strength is usually nonadjustable in a fixed environment defined by the resistor. Here, we design an on-chip circuit for InAs-Al hybrid nanowires where the DCB strength can be gate-tuned in situ. InAs-Al nanowires could host Andreev or Majorana zero-energy states. This technique enables tracking the evolution of the same state while tuning the DCB strength from weak to strong. We observe the transition from a zero-bias conductance peak to split peaks for Andreev zero-energy states. Our technique opens the door to in situ tuning interaction strength on zero-energy states.

• Received 4 January 2023
• Revised 20 September 2023
• Accepted 28 November 2023

DOI:https://doi.org/10.1103/PhysRevB.108.235416