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Compromise-Free Scaling of Qubit Speed and Coherence
Authors:
Miguel J. Carballido,
Simon Svab,
Rafael S. Eggli,
Taras Patlatiuk,
Pierre Chevalier Kwon,
Jonas Schuff,
Rahel M. Kaiser,
Leon C. Camenzind,
Ang Li,
Natalia Ares,
Erik P. A. M Bakkers,
Stefano Bosco,
J. Carlos Egues,
Daniel Loss,
Dominik M. Zumbühl
Abstract:
Across a broad range of qubits, a pervasive trade-off becomes obvious: increased coherence seems to be only possible at the cost of qubit speed. This is consistent with the notion that protecting a qubit from its noisy surroundings also limits the control over it. Indeed, from ions to atoms, to superconductors and spins, the leading qubits share a similar Q-factor - the product of speed and cohere…
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Across a broad range of qubits, a pervasive trade-off becomes obvious: increased coherence seems to be only possible at the cost of qubit speed. This is consistent with the notion that protecting a qubit from its noisy surroundings also limits the control over it. Indeed, from ions to atoms, to superconductors and spins, the leading qubits share a similar Q-factor - the product of speed and coherence time - even though the speed and coherence of various qubits can differ by up to 8 orders of magnitude. This is the qubit speed-coherence dilemma: qubits are either coherent but slow or fast but short-lived. Here, we demonstrate a qubit for which we can triple the speed while simultaneously quadrupling the Hahn-echo coherence time when tuning a local electric field. In this way, the qubit speed and coherence scale together without compromise on either quantity, boosting the Q-factor by over an order of magnitude. Our qubit is a hole spin in a Ge/Si core/shell nanowire providing strong 1D confinement, resulting in the direct Rashba spin-orbit interaction. Due to Heavy-hole light-hole mixing a maximum of the spin-orbit strength is reached at finite electrical field. At the local maximum, charge fluctuations are decoupled from the qubit and coherence is enhanced, yet the drive speed becomes maximal. Our proof-of-concept experiment shows that a properly engineered qubit can be made faster and simultaneously more coherent, removing an important roadblock. Further, it demonstrates that through all-electrical control a qubit can be sped up, without coupling more strongly to the electrical noise environment. As charge fluctuators are unavoidable in semiconductors and all-electrical control is highly scalable, our results improve the prospects for quantum computing in Si and Ge.
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Submitted 22 May, 2024; v1 submitted 11 February, 2024;
originally announced February 2024.
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Fully autonomous tuning of a spin qubit
Authors:
Jonas Schuff,
Miguel J. Carballido,
Madeleine Kotzagiannidis,
Juan Carlos Calvo,
Marco Caselli,
Jacob Rawling,
David L. Craig,
Barnaby van Straaten,
Brandon Severin,
Federico Fedele,
Simon Svab,
Pierre Chevalier Kwon,
Rafael S. Eggli,
Taras Patlatiuk,
Nathan Korda,
Dominik Zumbühl,
Natalia Ares
Abstract:
Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in efficiently tuning and operating these circuits. Identifying optimal operating conditions for these qubits is complex, involving the exploration of vast parameter spaces…
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Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in efficiently tuning and operating these circuits. Identifying optimal operating conditions for these qubits is complex, involving the exploration of vast parameter spaces. This presents a real 'needle in the haystack' problem, which, until now, has resisted complete automation due to device variability and fabrication imperfections. In this study, we present the first fully autonomous tuning of a semiconductor qubit, from a grounded device to Rabi oscillations, a clear indication of successful qubit operation. We demonstrate this automation, achieved without human intervention, in a Ge/Si core/shell nanowire device. Our approach integrates deep learning, Bayesian optimization, and computer vision techniques. We expect this automation algorithm to apply to a wide range of semiconductor qubit devices, allowing for statistical studies of qubit quality metrics. As a demonstration of the potential of full automation, we characterise how the Rabi frequency and g-factor depend on barrier gate voltages for one of the qubits found by the algorithm. Twenty years after the initial demonstrations of spin qubit operation, this significant advancement is poised to finally catalyze the operation of large, previously unexplored quantum circuits.
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Submitted 6 February, 2024;
originally announced February 2024.
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Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots
Authors:
Rafael S. Eggli,
Simon Svab,
Taras Patlatiuk,
Dominique A. Trüssel,
Miguel J. Carballido,
Pierre Chevalier Kwon,
Simon Geyer,
Ang Li,
Erik P. A. M. Bakkers,
Andreas V. Kuhlmann,
Dominik M. Zumbühl
Abstract:
Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deterior…
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Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with hyperabrupt capacitance-voltage characteristic, that is, a capacitance tunability similar to the best gallium arsenide-based devices. The varactor design introduced here is compact, scalable and easy to wirebond with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust, temperature and field independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium/silicon core/shell nanowire hole double quantum dot, paving the way towards gate-based single-shot spin readout. Our results bring small, magnetic field-resilient, highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio frequency applications.
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Submitted 6 December, 2023; v1 submitted 6 March, 2023;
originally announced March 2023.
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Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator
Authors:
J. H. Ungerer,
P. Chevalier Kwon,
T. Patlatiuk,
J. Ridderbos,
A. Kononov,
D. Sarmah,
E. P. A. M. Bakkers,
D. Zumbühl,
C. Schönenberger
Abstract:
Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through the nanowire. Here, we demonstrate a more versatile approach on investigating the charge configuration of these quantum dots. We employ a high-impedance, magne…
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Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through the nanowire. Here, we demonstrate a more versatile approach on investigating the charge configuration of these quantum dots. We employ a high-impedance, magnetic-field resilient superconducting resonator based on NbTiN and couple it to a double quantum dot in a Ge/Si nanowire. This allows us to dispersively detect charging effects, even in the regime where the nanowire is fully pinched off and no direct current is present. Furthermore, by increasing the electro-chemical potential far beyond the nanowire pinch-off, we observe indications for depleting the last hole in the quantum dot by using the second quantum dot as a charge sensor. This work opens the door for dispersive readout and future spin-photon coupling in this system.
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Submitted 3 December, 2022; v1 submitted 1 November, 2022;
originally announced November 2022.
