Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots

Rafael S. Eggli, Simon Svab, Taras Patlatiuk, Dominique A. Trüssel, Miguel J. Carballido, Pierre Chevalier Kwon, Simon Geyer, Ang Li, Erik P.A.M. Bakkers, Andreas V. Kuhlmann, and Dominik M. Zumbühl
Phys. Rev. Applied 20, 054056 – Published 28 November 2023

Abstract

Radio-frequency reflectometry techniques enable high-bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which, however, proves challenging at cryogenic temperatures. Gallium arsenide–based voltage-tunable capacitors, so-called varactor diodes, can be used for in situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with a hyperabrupt capacitance-voltage characteristic, i.e., a capacitance tunability similar to the best gallium arsenide–based devices. The varactor design introduced here is compact, scalable, and easy to wire bond, with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust temperature- and field-independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium-silicon core-shell nanowire hole double quantum dot, paving the way toward gate-based single-shot spin readout. Our results bring small magnetic field–resilient highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio-frequency applications.

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  • Received 25 April 2023
  • Revised 20 July 2023
  • Accepted 24 October 2023

DOI:https://doi.org/10.1103/PhysRevApplied.20.054056

© 2023 American Physical Society

Physics Subject Headings (PhySH)

Quantum Information, Science & TechnologyCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Rafael S. Eggli1,*,§, Simon Svab1,§, Taras Patlatiuk1, Dominique A. Trüssel1, Miguel J. Carballido1, Pierre Chevalier Kwon1, Simon Geyer1, Ang Li2,‡, Erik P.A.M. Bakkers2, Andreas V. Kuhlmann1, and Dominik M. Zumbühl1,†

  • 1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • 2Department of Applied Physics, TU Eindhoven, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands

  • *[email protected]
  • [email protected]
  • Current address: Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100124, China.
  • §These authors contributed equally to this work.

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Vol. 20, Iss. 5 — November 2023

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