1.
|
CMOS sensors in 90 nm fabricated on high resistivity wafers: Design concept and irradiation results
/ Rivetti, A (INFN, Turin) ; Caselle, M (CERN) ; Wyss, J (INFN, Padua ; Cassino U.) ; Bisello, D (INFN, Padua ; Padua U.) ; Costa, M (INFN, Turin ; Turin U. (main)) ; Kloukinas, K (CERN) ; Demaria, N (INFN, Turin) ; Pantano, D (INFN, Padua ; Padua U.) ; Rousset, J (MIND, Archamps) ; Battaglia, M (UC, Santa Cruz (main)) et al.
The LePix project aims at improving the radiation hardness and the readout speed of monolithic CMOS sensors through the use of standard CMOS technologies fabricated on high resistivity substrates. In this context, high resistivity means beyond 400 Omega cm, which is at least one order of magnitude greater than the typical value (1-10 Omega cm) adopted for integrated circuit production [...]
2013
- Published in : Nucl. Instrum. Methods Phys. Res., A 730 (2013) 119-123
In : 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italie, 9 - 12 Oct 2012, pp.119-123
|
|
2.
|
Monolithic pixels on moderate resistivity substrate and sparsifying readout architecture
/ Giubilato, P (INFN, Italy ; Padua U.) ; Caselle, M (INFN, Italy) ; Snoeys, W (CERN) ; Bisello, D (INFN, Italy ; Padua U.) ; Marchioro, A (CERN) ; Battaglia, M (UC, Santa Cruz, Astron. Astrophys.) ; Demaria, L (INFN, Italy ; Turin U.) ; Mansuy, S C (CERN) ; Pantano, D (INFN, Italy ; Padua U.) ; Rousset, J (MIND, Archamps) et al.
The LePix projects aim realizing a new generation monolithic pixel detectors with improved performances at lesser cost with respect to both current state of the art monolithic and hybrid pixel sensors. The detector is built in a 90 nm CMOS process on a substrate of moderate resistivity [...]
2013
- Published in : Nucl. Instrum. Methods Phys. Res., A 731 (2013) 146-153
In : 6th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Inawashiro, Japan, 3 - 7 Sep 2012, pp.146-153
|
|
3.
|
LePIX: First results from a novel monolithic pixel sensor
/ Mattiazzo, S (Padua U ; INFN, Padua) ; Battaglia, M (UC, Santa Cruz ; CERN) ; Bisello, D (Padua U ; INFN, Padua) ; Caselle, M (CERN) ; Chalmet, P (Unlisted, FR) ; Demaria, N (INFN, Turin) ; Giubilato, P (Padua U ; INFN, Padua) ; Ikemoto, Y (CERN) ; Kloukinas, K (CERN) ; Mansuy, C (CERN) et al.
We present a monolithic pixel sensor developed in the framework of the LePIX project aimed at tracking/triggering tasks where high granularity, low power consumption, material budget, radiation hardness and production costs are a concern. The detector is built in a 90nm CMOS process on a substrate of moderate resistivity. [...]
2013 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 718 (2013) 288-291
In : 12th Pisa Meeting on Advanced Detectors: Frontier Detector for Frontier Physics, La Biodola, Isola d'Elba, Italy, 20 - 26 May 2012, pp.288-291
|
|
4.
|
LePix-A high resistivity, fully depleted monolithic pixel detector
/ Giubilato, P (INFN, Padua ; Padua U.) ; Tindall, C (LBL, Berkeley) ; Mugnier, H (MIND Micro Technol, Bat Archamps, France.) ; Bisello, D (INFN, Padua ; Padua U.) ; Marchioro, A (CERN) ; Snoeys, W (CERN) ; Denes, P (LBL, Berkeley) ; Pantano, D (INFN, Padua ; Padua U.) ; Rousset, J (MIND Micro Technol, Bat Archamps, France.) ; Mattiazzo, S (INFN, Padua ; Padua U.) et al.
The LePix project explores monolithic pixel sensors fabricated in a 90 nm CMOS technology built over a lightly doped substrate. This approach keeps the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, and adds the benefit of charge collection by drift from a depleted region several tens of microns deep into the substrate, therefore providing an excellent signal to noise ratio and a radiation tolerance superior to conventional un-depleted MAPS. [...]
2013
- Published in : Nucl. Instrum. Methods Phys. Res., A 732 (2013) 91-94
In : 13th Vienna Conference on Instrumentation, Vienna, Austria, 11 - 15 Feb 2013, pp.91-94
|
|
5.
|
Radiation tolerance of a moderate resistivity substrate in a modern CMOS process
/ Potenza, A (INFN, Italy ; Turin U.) ; Bisello, D (INFN, Italy ; Padua U.) ; Caselle, M (INFN, Italy) ; Costa, M (INFN, Italy ; Turin U.) ; Demaria, N (INFN, Italy ; Turin U.) ; Giubilato, P (INFN, Italy ; Padua U.) ; Ikemoto, Y (CERN) ; Mansuy, C (CERN) ; Marchioro, A (CERN) ; Mattiazzo, S (Turin U ; Padua U.) et al.
The LePix project aims at developing monolithic pixel detectors in a 90nm CMOS technology ported on moderate resistivity substrate. The radiation tolerance of the base material, which is an order of magnitude higher doped than standard high resistivity detectors, and which underwent the full advanced CMOS process, has been investigated. [...]
2013 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 718 (2013) 347-349
In : 12th Pisa Meeting on Advanced Detectors: Frontier Detector for Frontier Physics, La Biodola, Isola d'Elba, Italy, 20 - 26 May 2012, pp.347-349
|
|
6.
|
Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade
/ Cavicchioli, C (CERN) ; Chalmet, P L (MIND, Archamps) ; Giubilato, P (Padua U. ; INFN, Padua) ; Hillemanns, H (CERN) ; Junique, A (CERN) ; Kugathasan, T (CERN) ; Mager, M (CERN) ; Marin Tobon, C A (Valencia, Polytechnic U.) ; Martinengo, P (CERN) ; Mattiazzo, S (Padua U. ; INFN, Padua) et al.
Within the R&D; activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget (~0.3%X0~0.3%X0 in total for each inner layer) and higher granularity (View the MathML source~20μm×20μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity View the MathML source(ρ>1kΩcm) and 18 μm thick epitaxial layer. [...]
2014
- Published in : Nucl. Instrum. Methods Phys. Res., A 765 (2014) 177-182
Elsevier Open Access article: PDF;
In : 9th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 2 - 6 Sep 2013, pp.177-182
|
|
7.
|
Monolithic active pixel sensor development for the upgrade of the ALICE inner tracking system
/ Aglieri, G (CERN) ; Cavicchioli, C (CERN) ; Chalmet, P.L (Unlisted, FR) ; Chanlek, N (Suranaree U. of Tech.) ; Collu, A (Cagliari U ; INFN, Cagliari) ; Giubilato, P (Padua U ; INFN, Padua) ; Hillemanns, H (CERN) ; Hoorne, J.W.van (CERN ; Vienna, Tech. U.) ; Junique, A (CERN) ; Keil, M (CERN) et al.
ALICE plans an upgrade of its Inner Tracking System for 2018. The development of a monolithic active pixel sensor for this upgrade is described. [...]
2013
- Published in : JINST 8 (2013) C12041
IOP Open Access article: PDF;
In : Topical Workshop on Electronics for Particle Physics, Perugia, Italy, 23 - 27 Sep 2013, pp.C12041
|
|
8.
|
Low-power priority Address-Encoder and Reset-Decoder data-driven readout for Monolithic Active Pixel Sensors for tracker system
/ Yang, P (Hua-Zhong Normal U.) ; Aglieri, G (CERN) ; Cavicchioli, C (CERN) ; Chalmet, P L (Unlisted, FR) ; Chanlek, N (Suranaree U. of Tech.) ; Collu, A (Cagliari U. ; INFN, Italy) ; Gao, C (Hua-Zhong Normal U.) ; Hillemanns, H (CERN) ; Junique, A (CERN) ; Kofarago, M (CERN ; Utrecht U.) et al.
Active Pixel Sensors used in High Energy Particle Physics require low power consumption to reduce the detector material budget, low integration time to reduce the possibilities of pile-up and fast readout to improve the detector data capability. To satisfy these requirements, a novel Address-Encoder and Reset-Decoder (AERD) asynchronous circuit for a fast readout of a pixel matrix has been developed. [...]
2015 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 785 (2015) 61-69
Elsevier Open Access article: PDF;
|
|
9.
|
A Data Readout Module for the TOTEM Experiment
/ Antchev, G (Sofiya, Inst. Nucl. Res. ; CERN) ; Anelli, G (CERN) ; Aspell, P (CERN) ; Chalmet, P (ESI, Archamps) ; Da Sliva, J (LIP, Lisbonne) ; Kaplon, J (CERN) ; Mugnier, H (ESI, Archamps) ; Reynaud, S (CERN) ; Saramad, S (CERN) ; Snoeys, W (CERN) et al.
2005
Fulltext: PDF;
In : 20th International Symposium on Nuclear Electronics and Computing, Varna, Bulgaria, 12 - 18 Sep 2005, pp.49-54
|
|
10.
|
|