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GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
/ Zhang, C M (Ecole Polytechnique, Lausanne) ; Jazaeri, F (Ecole Polytechnique, Lausanne) ; Pezzotta, A (Ecole Polytechnique, Lausanne) ; Bruschini, C (Ecole Polytechnique, Lausanne) ; Borghello, G (CERN ; U. Udine (main)) ; Faccio, F (CERN) ; Mattiazzo, S (U. Padua (main)) ; Baschirotto, A (Milan Bicocca U.) ; Enz, C (Ecole Polytechnique, Lausanne)
The DC performance of both $n$- and $p$MOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS technology in the forthcoming upgrade of the Large Hadron Collider at CERN. [...]
2017 - 4 p.
- Published in : 10.1109/NSSMIC.2016.8069869
In : IEEE Nuclear Science Symposium and Medical Imaging Conference, Strasbourg, France, 29 Oct - 6 Nov 2016, pp.8069869
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2.
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Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Pezzotta, Alessandro (Ecole Polytechnique, Lausanne) ; Bruschini, Claudio (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (U. Padua (main)) ; Baschirotto, Andrea (Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex interplay of oxide and interface charge trapping relevant to the gate-related dielectrics and the shallow trench isolation. [...]
2017 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 64 (2017) 2639-2647
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Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC
/ Pezzotta, A (Milan Bicocca U. ; Ecole Polytechnique, Lausanne ; INFN, Milan Bicocca) ; Zhang, C M (Ecole Polytechnique, Lausanne) ; Jazaeri, F (Ecole Polytechnique, Lausanne) ; Bruschini, C (Ecole Polytechnique, Lausanne) ; Borghello, G (CERN ; U. Udine (main)) ; Faccio, F (CERN) ; Mattiazzo, S (Padua U.) ; Baschirotto, A (Milan Bicocca U.) ; Enz, C (Ecole Polytechnique, Lausanne)
The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fabricated in a commercial 28 nm bulk CMOS process with the perspective of using it for the future silicon-based detectors. [...]
2016 - 4 p.
- Published in : 10.1109/ESSDERC.2016.7599608
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Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Baschirotto, Andrea (Milan Bicocca U. ; INFN, Milan Bicocca) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO$_2$) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various sizes provide insight into the TID-induced lateral parasitic devices, which contribute the most to the significant increase up to four orders of magnitude in the drain leakage current. [...]
2018 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2018) 38-47
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Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
/ Mattiazzo, S (Padua U.) ; Bagatin, M (Padua U.) ; Bisello, D (Padua U. ; INFN, Padua) ; Gerardin, S (Padua U. ; INFN, Padua) ; Marchioro, A (CERN) ; Paccagnella, A (Padua U. ; INFN, Padua) ; Pantano, D (Padua U. ; INFN, Padua) ; Pezzotta, A (Milan Bicocca U. ; INFN, Milan Bicocca ; Ecole Polytechnique, Lausanne) ; Zhang, C M (Ecole Polytechnique, Lausanne) ; Baschirotto, A (Milan Bicocca U. ; INFN, Milan Bicocca)
This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. [...]
2017 - 10 p.
- Published in : JINST 12 (2017) C02003
In : Topical Workshop on Electronics for Particle Physics, Karlsruhe, Germany, 26 - 30 Sep 2016, pp.C02003
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6.
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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
/ Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436
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7.
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Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Mattiazzo, Serena (INFN, Padua ; U. Padua (main)) ; Baschirotto, Andrea (INFN, Milan Bicocca ; Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne)
/ScalTech28project
This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems..
2019 - 3 p.
- Published in : 10.1109/NSSMIC.2018.8824379
In : 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2018), Sydney, Australia, 10 - 17 Nov 2018, pp.8824379
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Radiation tolerance study of a commercial 65 nm CMOS technology for high energy physics applications
/ Ding, Lili (Padua U. ; INFN, Padua ; Northwest Inst. Nucl. Tech., Xian) ; Gerardin, Simone (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U.) ; Bisello, Dario (Padua U. ; INFN, Padua) ; Mattiazzo, Serena (Padua U.) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua)
This paper reports the radiation tolerance study of a commercial 65 nm technology, which is a strong candidate for the Large Hadron Collider applications. After exposure to 3 MeV protons till 1 Grad dose, the 65 nm CMOS transistors, especially the pMOSFETs, showed severe long-term degradation mainly in the saturation drain currents. [...]
2016 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 831 (2016) 265-268
In : 10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Xi'an, China, 25 - 29 Sep 2015, pp.265-268
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