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\title{Development of Radiation Damage Models for Irradiated Silicon Sensors Using TCAD Tools}
/ Bhardwaj, Ashutosh (Delhi U.) ; Messineo, Alberto (INFN, Pisa ; Pisa U.) ; Lalwani, Kavita (Delhi U.) ; Ranjan, Kirti (Delhi U.) ; Printz, Martin (Karlsruhe U., EKP) ; Ranjeet, Ranjeet (Delhi U.) ; Eber, Robert (Karlsruhe U., EKP) ; Eichhorn, Thomas (DESY) ; Peltola, Timo Hannu Tapani (Helsinki Inst. of Phys.)
Abstract. During the high luminosity upgrade of the LHC (HL-LHC) the CMS tracking system will face a more intense radiation environment than the present system was designed for. [...]
CMS-CR-2014-120.-
Geneva : CERN, 2014 - 6 p.
Fulltext: PDF;
In : International Conference on Technology and Instrumentation in Particle Physics 2014, Amsterdam, Netherlands, 2 - 6 Jun 2014
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Simulations of Inter-Strip Capacitance and Resistance for the Design of the CMS Tracker Upgrade
/ Eichhorn, Thomas (DESY) ; Bhardwaj, Ashutosh (Delhi U.) ; Ranjeet, Ranjeet (Delhi U.) ; Eber, Robert (Karlsruhe U., EKP) ; Lalwani, Kavita (Delhi U.) ; Messineo, Alberto (INFN, Pisa ; Pisa U.) ; Peltola, Timo Hannu Tapani (Helsinki Inst. of Phys.) ; Printz, Martin (Karlsruhe U., EKP) ; Ranjan, Kirti (Delhi U.)
An upgrade of the LHC accelerator, the high luminosity phase of the LHC (HL-LHC), is foreseen for 2023. The tracking system of the CMS experiment at HL-LHC will face a more intense radiation environment than the present system was designed for. [...]
CMS-CR-2014-126.-
Geneva : CERN, 2014 - 6 p.
- Published in : PoS: TIPP2014 (2014) , pp. 279
Fulltext: PDF;
In : International Conference on Technology and Instrumentation in Particle Physics 2014, Amsterdam, Netherlands, 2 - 6 Jun 2014, pp.279
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Design Optimization of Pixel Sensors using Device Simulations for the Phase-II CMS Tracker Upgrade
/ CMS Collaboration
\begin{abstract}
In order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters [...]
CMS-CR-2015-111.-
Geneva : CERN, 2016 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 824 (2016) 413-416
Fulltext: PDF;
In : Frontier Detectors for Frontier Physics: 13th Pisa Meeting on Advanced Detectors, La Biodola, Isola D'elba, Italy, 24 - 30 May 2015, pp.413-416
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Silicon sensors for the CMS Preshower
/ Peisert, Anna (CERN) ; Zamiatin, Nikolai (JINR , Dubna, Russia)
The paper is a summary of a research and development program, conducted during the past three years on the CMS Preshower silicon sensors with the goal at defining the specifications. The main point was the radiation hardness of these devices, resulting from the specific design: metal lines wider than the p+ implants and a series of guard rings, and to the production technology: a deep n+ layer on the ohmic side. [...]
CMS-NOTE-2000-061.-
Geneva : CERN, 2000
Fulltext: PDF PS.Z;
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Impact of low-dose electron irradiation on n$^+$p silicon strip sensors
/ Klanner, Robert (Hamburg U.)
The response of $n^+p$ silicon strip sensors to electrons from a $^{90}$Sr source was measured using the ALiBaVa read-out system.
The measurements were performed over a period of several weeks, during which several operating conditions were varied. The sensors were fabricated by Hamamatsu on 200\,$\mu $m thick float-zone and magnetic-Czochralski silicon.
Their pitch is 80\,$\mu $m, and both $p$-stop and $p$-spray isolation of the $p^+$ strips were studied.
The electrons from the $^{90}$Sr source were collimated to a spot with a full-width-at-half maximum of 2\,mm at the sensor surface, and the dose rate in the SiO$_2$ at the maximum was about 0.6 mGy/s.
The dose in the SiO$_2$ at the end of the measurements was about 500\,Gy.
Significant changes in the charge collection and charge sharing were observed as function of $^{90}$Sr irradiation dose.
Annealing studies, with temperatures up to $80^\circ $C and annealing times of 18\,hours, show that the changes can only be partially annealed.
The observations are qualitatively explained with the help of TCAD simulations in which the effects of radiation damage in SiO$_2$ have been included.
The relevance of the measurements for the design and use of $p^+n$ strip sensors in different radiation environments is discussed..
CMS-CR-2014-131.-
Geneva : CERN, 2014 - 10 p.
Fulltext: PDF;
In : International Conference on Technology and Instrumentation in Particle Physics 2014, Amsterdam, Netherlands, 2 - 6 Jun 2014
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Characteristics of irradiated silicon microstrip detectors with <100> and <111> substrates
/ Akimoto, T ; Arai, S ; Hara, K ; Nakayama, T ; Ikegami, Y ; Iwata, Y ; Kobayashi, H ; Kohriki, T ; Kondo, T ; Nakano, I et al.
In a program of developing radiation-hard silicon sensors for the LHC-ATLAS experiment, we have irradiated various types of silicon sensors with 12 CeV protons at KEK. Among the other properties, we made a comparative study of characteristics of the sensors with two wafer planes <111> and <100>. [...]
2001
- Published in : Nucl. Instrum. Methods Phys. Res., A 466 (2001) 354-8
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TeL server - Fulltext
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