|
1.
|
Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects
/ Rafí, J M (Barcelona, Inst. Microelectron.) ; Quirion, D (Barcelona, Inst. Microelectron.) ; Duch, M (Barcelona, Inst. Microelectron.) ; Paz, I Lopez (Barcelona, Inst. Microelectron.) ; Dauderys, V (Barcelona, Inst. Microelectron.) ; Claus, T (Barcelona, Inst. Microelectron.) ; Moffat, N (Barcelona, Inst. Microelectron.) ; Molas, B (CELLS - ALBA, LLS) ; Tsunoda, I (Kumamoto Nat. Coll. Tech.) ; Yoneoka, M (Kumamoto Nat. Coll. Tech.) et al.
Ultrathin semiconductor photodiodes are of interest for beam position and monitoring in X-ray synchrotron beamlines and particle therapy medical applications. In this work, single and four-quadrant diodes have been fabricated on ultrathin Si films with thicknesses of 10 μm, 5 μm and 3 μm from silicon on insulator (SOI) substrates. [...]
2023 - 8 p.
- Published in : Solid State Electron. 209 (2023) 108756
Fulltext: PDF;
|
|
|
2.
|
Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors
/ Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Godignon, Philippe (Barcelona, Inst. Microelectron.) ; Rius, Gemma (Barcelona, Inst. Microelectron.) ; Dauderys, Vainius (Barcelona, Inst. Microelectron.) ; Tsunoda, Isao (Kumamoto Nat. Coll. Tech.) ; Yoneoka, Masashi (Kumamoto Nat. Coll. Tech.) ; Takakura, Kenichiro (Kumamoto Nat. Coll. Tech.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Moll, Michael (CERN)
Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it especially appropriate for radiation monitoring in radiation harsh environments and for elevated temperature operation. In this work, radiation effects in electron-, neutron-, and proton-irradiated 4H-SiC p-n junction diodes are investigated by means of electrical characterization, including current–voltage characteristics measured at different temperatures ranging from −50 °C to +200°C. [...]
2023 - 12 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2285-2296
External link: accepted manuscript
|
|
|
3.
|
Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors
/ Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Godignon, Philippe (Barcelona, Inst. Microelectron.) ; Ugobono, Sofía Otero (Barcelona, Inst. Microelectron.) ; Rius, Gemma (Barcelona, Inst. Microelectron.) ; Tsunoda, Isao (Kumamoto Nat. Coll. Tech.) ; Yoneoka, Masashi (Kumamoto Nat. Coll. Tech.) ; Takakura, Kenichiro (Kumamoto Nat. Coll. Tech.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Moll, Michael (CERN)
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated temperatures and, especially, for the plasma diagnostic systems in future nuclear fusion reactors. In this work, four-quadrant p-n junction diodes produced on epitaxial 4H-SiC substrates are studied. [...]
2020 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 67 (2020) 2481-2489
|
|
|
4.
|
Investigation of nitrogen enriched silicon for particle detectors
/ Hönig, J C (Freiburg U.) ; Baselga, M (DESY) ; Vignali, M Centis (CERN) ; Diehl, L (Freiburg U.) ; Dierlamm, A (Karlsruhe U.) ; Fretwurst, E (Hamburg U.) ; Kaminski, P (Warsaw, Inst. Electron. Mat. Tech.) ; Moll, M (CERN) ; Moos, F (Freiburg U.) ; Mori, R (Freiburg U.) et al.
This article explores the viability of nitrogen enriched silicon for particle physics application. For that purpose silicon diodes and strip sensors were produced using high resistivity float zone silicon, diffusion oxygenated float zone silicon, nitrogen enriched float zone silicon and magnetic Czochralski silicon. [...]
2020 - 13 p.
- Published in : JINST 15 (2020) P05006
Fulltext: PDF;
|
|
|
5.
|
Characterization of magnetic Czochralski silicon radiation detectors
/ Pellegrini, G (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.)
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrònica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic OYJ and they have a nominal resistivity of $1 \rm{k} \Omega cm$. [...]
2005 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 548 (2005) 355-363
|
|
|
6.
|
Technology development of p-type microstrip detectors with radiation hard p-spray isolation
/ Pellegrini, G (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.) ; Díez, S (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.)
A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. [...]
2006 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 566 (2006) 360-365
|
|
|
7.
|
|
|
RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders
/ Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003.
-
2010. - 73 p.
Fulltext
|
|
|
8.
|
|
|
9.
|
Characterisation of p-type detectors for the future Super-LHC
/ Lacasta, C (IFIC, Valencia, Spain) ; Campabadal, F (CNM-IMB, Barcelona, Spain) ; Fleta, C (CNM-IMB, Barcelona, Spain) ; García, C (IFIC, Valencia, Spain) ; Lozano, M (CNM-IMB, Barcelona, Spain) ; Martí, S (IFIC, Valencia, Spain) ; Miñano, M (IFIC, Valencia, Spain) ; Pellegrini, G (CNM-IMB, Barcelona, Spain) ; Rafí, J M (CNM-IMB, Barcelona, Spain) ; Ullán, M (CNM-IMB, Barcelona, Spain)
2007
- Published in : Nucl. Instrum. Methods Phys. Res., A 579 (2007) 604-607
In : 6th International "Hiroshima" Symposium on the Development and Applications of Semiconductor Tracking Detectors, Carmel, CA, USA, 11 - 15 Sep 2006, pp.604-607
|
|
|
10.
|
|
alerte email personnalisée
ou inscrivez-vous via le 
flux RSS.