CERN Accelerating science

Article
Report number	arXiv:1611.04970
Title	Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
Related title	Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
Author(s)	Cavallaro, Emanuele (Barcelona, IFAE) ; Casanova, Raimon (Barcelona, IFAE) ; Förster, Fabian (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona) ; Lange, Jörn (Barcelona, IFAE) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Mandić, Igor (Stefan Inst., Ljubljana) ; Puigdengoles, Carles (Barcelona, IFAE) ; Terzo, Stefano (Barcelona, IFAE)
Publication	2017-01-25
Imprint	15 Nov 2016
Number of pages	11
In:	JINST 12 (2017) C01074
In:	Topical Workshop on Electronics for Particle Physics, Karlsruhe, Germany, 26 - 30 Sep 2016, pp.C01074
DOI	10.1088/1748-0221/12/01/C01074
Subject category	hep-ex ; 6: Novel high voltage and resistive CMOS sensors ; physics.ins-det ; Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC ; ATLAS
Abstract	Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). The H35Demo chip has a large area ($18.49 \times 24.40 \, \mathrm{mm^2}$) and includes four different pixel matrices and three test structures. In this paper the radiation hardness properties, in particular the evolution of the depletion region with fluence is studied using edge-TCT on test structures. Measurements on the test structures from chips with different substrate resistivity are shown for non irradiated and irradiated devices up to a cumulative fluence of $2 \cdot 10^{15} \, \mathrm{1\,MeV\, n_{eq} / cm^{2}}$.
Copyright/License	arXiv nonexclusive-distrib. 1.0

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