Unit 2
Unit 2
(BEC-402)
Unit-2
Frequency Response of Amplifiers
Syllabus
Common Emitter / Common Source Amplifier
Frequency Response of Amplifier
High Frequency Transistor Model
hybrid-π and T models of the BJT, including capacitive effects.
Specifically, there are two capacitances: the emitter–base capacitance Cπ = Cde + Cje and
the collector–base capacitance Cμ.
Typically, Cπ is in the range of a few pico farads to a few tens of pico farads, and Cμ is in
the range of a fraction of a pico farad to a few pico farads.
Note that we have also added a resistor rx to model the resistance of the silicon material of
the base region between the base terminal B and a fictitious internal, or intrinsic, base
terminal B that is right under the emitter region.
Typically, rx is a few tens of ohms, and its value depends on the current level in a rather
complicated manner.
Since (usually) rx much less than rπ , its effect is negligible at low frequencies. Its
presence is felt, however, at high frequencies, as will become apparent later.
For small signals, we can define the small-signal diffusion capacitance Cde,
The Base–Emitter Junction Capacitance Cje A change in vBE changes not only
the charge stored in the base region but also the charge stored in the base–emitter
depletion layer.
This distinct charge-storage effect is represented by the EBJ depletion-layer
capacitance, Cje.
The Collector–Base Junction Capacitance Cμ In active-mode operation, the CBJ
is reverse biased, and its junction or depletion capacitance, usually denoted Cμ, can
be found
The BJT unity gain frequency
• A node equation at C provides the short-circuit collector current Ic as
Common Emitter Amplifier
High Frequency model of MOSFET