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L5m - Ch4. Thermal Process

The document discusses thermal processes in VLSI manufacturing, focusing on oxidation methods, including dry and wet oxidation, and their applications in IC fabrication. It highlights the importance of pre-oxidation cleaning to ensure high-quality oxide growth and outlines safety precautions for handling hazardous materials like Hydrofluoric Acid. Additionally, the document covers annealing processes and the significance of rapid thermal processing in modern semiconductor technology.

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Nguyễn Hải Đăng
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7 views29 pages

L5m - Ch4. Thermal Process

The document discusses thermal processes in VLSI manufacturing, focusing on oxidation methods, including dry and wet oxidation, and their applications in IC fabrication. It highlights the importance of pre-oxidation cleaning to ensure high-quality oxide growth and outlines safety precautions for handling hazardous materials like Hydrofluoric Acid. Additionally, the document covers annealing processes and the significance of rapid thermal processing in modern semiconductor technology.

Uploaded by

Nguyễn Hải Đăng
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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VLSI Manufacturing

Technology
Ch5. Thermal Process

1
Material Wafer

IC
fabrication
Chemical
Metallizati Dielectric
Mask mechanica Testing
on deposition
l polishing

Photoresis
IC design Thermal Etching Packaging
t

Photolitho
graphy

2
1. Availability
2. Easily processable & stable oxide
3. Bandgap
Gate
Source Drain
Oxide
n n

p-substrateOxide is an essential part of


the MOSFET

3
Lateral Furnace

4
Vertical Furnace

5
𝑆𝑖 +𝑂 2=𝑆𝑖 𝑂 2

O2 O2 O2
diffusion

X ~10A Native oxide at RT

Silicon

6
𝑆𝑖 +𝑂 2=𝑆𝑖 𝑂 2
At high
temperature
(>1000C)

Nativediffusion
oxide at RT

O2 O2 O2

Silicon

The process usually takes hours to


grow good quality oxide 7
𝑆𝑖 +𝑂 2=𝑆𝑖 𝑂 2
At high
temperature
(>1000C) Oxidation method, pressure, dopant, crystal
orientation etc all affects A & B
Nativediffusion
oxide at RT

O2 O2 O2

Silicon

The process usually takes hours to


grow good quality oxide 8
DRY
Slow

WET

Fast Faster

9
saucepan
WET pressure cooker

+
pressure VS.

10
Oxide Usages

Masking or screening oxide

11
Oxide Usages
Padding oxide
Shallow Trench Isolation (STI) LOCal Oxidation of Silicon (LOCOS)

12
Pre-Oxidation Cleaning (RCA Clean)
Contamination particles can act as nucleation
sites for oxide crystallization.

𝐻 2 𝑆 𝑂 4 / 𝑁 𝐻 4 𝑂𝐻
𝐻 2 𝑂2
𝐻 2 𝑂

Poor quality oxide 1:1:5 Standard Cleaning (SC-1)


(induced by activation centers)

Removes organic material 13


Pre-Oxidation Cleaning or natural oxide removal

Removes inorganic material Removes oxide

𝐻 𝐶𝐿 𝐻 𝐹
𝐻 2 𝑂2
𝐻 2 𝑂 𝐻 2 𝑂

1:1:6 Standard Cleaning (SC-2) 1:50 Standard Cleaning


14
Safe Handling of Hydrofluoric Acid (HF)
⚠
100% of Hydrofluoric Acid (HF) is extremely
hazardous, as it is highly toxic and can penetrate the
skin, causing severe tissue damage and systemic
toxicity. Proper safety precautions must always be
followed when working with HF !

15
⚠
1. Personal Protective Equipment (PPE)

✔ Gloves: Use double nitrile gloves or fluoropolymer (e.g., Viton) gloves. Latex or
standard nitrile gloves provide limited protection.
✔ Face Shield & Safety Goggles: Protects eyes and face from splashes.
✔ Lab Coat & Apron: Wear a chemical-resistant apron over a lab coat for full coverage.
✔ Closed-Toe Shoes: Preferably acid-resistant footwear or shoe covers.

2. Ventilation & Work Area

✔ Always work in a fume hood with proper airflow to avoid inhaling HF vapors.
✔ Use plastic or Teflon (PTFE) containers, as HF reacts with glass and silica-based
materials.
✔ Label all HF-containing solutions clearly to prevent accidental exposure.
16
Dry Oxidation vs. Wet Oxidation
𝑆𝑖 +𝑂 2=𝑆𝑖 𝑂 2

HCl

18
Dry Oxidation vs. Wet Oxidation
𝑆𝑖 +2 𝐻 2 𝑂=𝑆𝑖 𝑂 2 +2 𝐻 2

Water flow rate too difficult to control!

19
Dry Oxidation vs. Wet Oxidation
𝑆𝑖 +2 𝐻 2 𝑂=𝑆𝑖 𝑂 2 +2 𝐻 2

20
Dry Oxidation vs. Wet Oxidation

Quality Good Normal

Speed Slow Fast

Application Screening Masking


oxide oxide
Pad oxide LOCOS
Gate oxide

21
Annealing
A heating process applied to a
material or structure to achieve a
chemical or physical change.

Furnace rapid thermal


process (RTP)

22
Alloy annealing

23
Reflow

surface planarization

24
Furnace rapid thermal process
(RTP)
Batch process; slow Single wafer; fast

25
For RTP, the ramp-up rate is roughly 100 C/sec
(about 10 sec to 1000 C)
For traditional furnaces, it takes 10-40 min
26
Rapid Thermal Processing

Honeycomb

27
RTP as post-implantation stage for further dopand diffusion

28
WHY RTP?
As device technology scales down, thick
oxide is no longer required. Gate oxide is
reduced to 15 Å, and STI has replaced
LOCOS. The quality of the oxide, the control
of contamination, and the control of
annealing time have become more
impactful than before

29
Homework
• Textbook #1 reading: page 126 -143 and 156-172 (chapter 5)

30

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