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IV Sources and Detectors

The document covers the principles and characteristics of optical sources and detectors, specifically focusing on semiconductor lasers and light-emitting diodes (LEDs). It explains the operational mechanisms, including the importance of materials like GaAs for lasers and Si or Ge for LEDs, and discusses optical fiber measurements such as attenuation, dispersion, and refractive index profile measurements. Various methods for measuring these parameters are also outlined, emphasizing their significance in mobile communication technologies.

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17 views17 pages

IV Sources and Detectors

The document covers the principles and characteristics of optical sources and detectors, specifically focusing on semiconductor lasers and light-emitting diodes (LEDs). It explains the operational mechanisms, including the importance of materials like GaAs for lasers and Si or Ge for LEDs, and discusses optical fiber measurements such as attenuation, dispersion, and refractive index profile measurements. Various methods for measuring these parameters are also outlined, emphasizing their significance in mobile communication technologies.

Uploaded by

Remrema
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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OPTICAL FIBER AND MOBILE COMMUNICATION

MSc Electronics (IV Semester)


Name of Course: Optical Fiber and Mobile Communication
Unit 2 of ELEC/MJ/650(a)

National Institute of Electronics & Information Technology


Aizawl, Mizoram- 796001

27th February 2025

by
Vanlalremruata
Faculty (Contract), NEILIT Aizawl Centre
OPTICAL SOURCES & DETECTORS
SEMICONDUCTOR LASER
• Efficiency of Semiconductor LASER is superior to any type of
LASER
• The active medium is a Semiconductor material.
• It should be a direct Band Gap Semiconductor to release
Photons in recombination of Electrons &Holes
• It should be a degenerative semiconductor (p-type and n-type
are heavily Doped)
• GaAs material has the desired property
• Semiconductor LASER emits Coherent Light Source.
• Uses the property of Stimulated Emission for Lasing.

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OPTICAL SOURCES & DETECTORS
• GaAs is preferred because of the property of injection of extra
electrons in the conduction band for stimulated emission
• It can also be the case of degenerate p-n diode for stimulated
emission where the first few photons are released by
spontaneous emission.
OPTICAL SOURCES & DETECTORS
OPTICAL SOURCES & DETECTORS
Intrinsic GaAs for PIN
SEMICONDUCTOR LASER UNBIASED
diode

Electrons Depletion Holes


N type GaAs Region P type GaAs

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OPTICAL SOURCES & DETECTORS
SEMICONDUCTOR LASER FW BIASED Release of Photons

Recombination of
Electrons and Holes

Electrons Depletion Holes


N type Region P type

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OPTICAL SOURCES & DETECTORS
SEMICONDUCTOR LASER UN BIASED (Energy Band Diagram)
• The depletion region is denoted by the slope.
• In Unbiased Mode the fermi level is same and the area under
the fermi level is full of electrons as they are in thermal
equilibrium.
SEMICONDUCTOR LASER FW BIASED (Energy Band Diagram)
• If FW voltage is applied the Depletion Region becomes
narrower.
• Due to this Fermi level in P type moves down and The Fermi
level in N type moves up. Energy required for recombination
becomes very low.
• Electron is pushed toward the Depletion Region from the N
type and Holes from the P type.
• The Conduction Band has high concentration of electrons
and the Valence Band has high concentration of holes
(Population Inversion)
• The recombination of large number electrons and holes
from applied voltage releases extra photons by stimulated
emission.
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OPTICAL SOURCES & DETECTORS
SEMICONDUCTOR LASER FW BIASED (Energy Band Diagram)
• Highly Monochromatic LASER Beam will come out of the Partially Polished Plane.

NOTE : Band Gap of GaAs is 1.42 eV


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OPTICAL SOURCES & DETECTORS
Light Emitting Diode (LED)

• A light-emitting diode (LED) is a semiconductor device that emits light when an electric
current flows through it. When current passes through an LED, the electrons recombine
with holes emitting light in the process. LEDs allow the current to flow in the forward
direction and blocks the current in the reverse direction
• It works on the principle of Spontaneous emission.
• Spontaneous emission takes place without interaction with other photons, and the direction
and phase are random.
• Working is similar to previous except there is no stimulated emission and material is Si or
Ge which are Indirect Band Gap Semiconductor .

NOTE : Band Gap of Si is 1.11 eV


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OPTICAL FIBER MEASUREMENTS
Fiber attenuation measurements
The attenuation of fiber in dB/Km is given as,
OPTICAL FIBER MEASUREMENTS
Dispersion measurements
• Dispersion measurements give an indication of the distortion to optical signals as they propagate down optical fibers. The
delay distortion which, for example, leads to the broadening of transmitted light pulses limits the information-carrying
capacity of the fiber.
• Fiber dispersion measurements can be made in either the time or frequency domains.
• In the time domain for the optical output power Po(t) from the fiber may be obtained by convoluting the power impulse
response h(t) with the optical input power Pi(t) as:

• In the frequency domain the power transfer function H(ω) is the Fourier transform of h(t) and therefore by taking
the Fourier transforms of all the functions
OPTICAL FIBER MEASUREMENTS
Refractive Index Profile Measurements
1. Interferometric methods
OPTICAL FIBER MEASUREMENTS
The fringe displacements for the points within the fiber core are then measured using as reference the parallel
fringes outside the fiber core (in the fiber cladding). The refractive index difference between a point in the
fiber core (e.g. the core axis) and the cladding can be obtained from the fringe shift q, which corresponds to a
number of fringe displacements. This difference in refractive index δn is given by

where x is the thickness of the fiber slab and λ is the incident optical wavelength. The slab method gives an accurate
measurement of the refractive index profile

To Study By Yourself
Induced-grating autocorrelation (IGA)
induced-grating autocorrelation function technique
Near-field scanning method
OPTICAL FIBER MEASUREMENTS
Refracted Near- Field Method
• Refracted Near- Field Method does not require a leaky mode correction factor or equal mode excitation.
• It provides the relative refractive index differences directly without recourse to external calibration or reference
samples.
• The RNF method is the most commonly used technique for the determination of the fiber refractive index profile
OPTICAL FIBER MEASUREMENTS
The detected optical power as a function of the radial position of the input beam P(r) is measured and a value P(a)
corresponding to the input beam being focused into the cladding is also obtained. The refractive index profile n(r) for the
fiber core is then given by
FIBER CUTOFF WAVELENGTH MEASUREMENTS
Thank You

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