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Lect Intro

The document outlines the graduate attributes expected from students at Southern Cross University, emphasizing skills such as intellectual rigor, creativity, and effective communication. It also discusses the importance of materials processing in electronic devices, highlighting the need for high purity and crystalline order in semiconductor materials. Additionally, it covers the properties of insulators, conductors, and semiconductors, along with the fundamentals of charge carriers and light emission in semiconductors.

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13 views10 pages

Lect Intro

The document outlines the graduate attributes expected from students at Southern Cross University, emphasizing skills such as intellectual rigor, creativity, and effective communication. It also discusses the importance of materials processing in electronic devices, highlighting the need for high purity and crystalline order in semiconductor materials. Additionally, it covers the properties of insulators, conductors, and semiconductors, along with the fundamentals of charge carriers and light emission in semiconductors.

Uploaded by

aayush.patidar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Graduate Attributes

(Southern Cross University, Australia)


The graduates of the University are expected to develop the following
during their programmes:
 Intellectual rigour
 Creativity
 Ethical understanding, sensitivity, commitment
 Command an area of knowledge
 Lifelong learning --- ability of independent & self-directed learning
 Effective communication and social skills
 Cultural awareness
(From: S. Yeo, CDTLink, NUS, July 2004)
Importance of Materials Processing

 All electronic devices & systems are made of materials in


various combinations

 Raw materials are far from the final electronic products

 Semiconductor materials (e.g., Si, Ge, GaAs, GaN...) used for


devices must be of extremely high purity and crystalline order
Desirable Device Qualities
 Strong functionality
 Reliable, long lifetime
 Low cost, high energy efficiency
 Small volume, light weight...
 Examples: your notebook PC, mobile phone…
All these require high precision and efficient
materials processing technologies
Real Materials and their Processing

 Particles, lines and rigid bodies vs. real materials

 Material-specific properties determine the function


and processing details of a material

 Comprehensive knowledge of materials processing


requires ~ 5-10 years of learning and practice

 Advantage and role of physics students


Insulators, Conductors, Semiconductors
from energy band structures
E E E
conduction band conduction
empty band
-
Band
Band electron partially-filled
Forbidden gap
gap Eg < band
5eV hole
region Eg > 5eV +
valence
valence band band
filled
Insulator Semiconductor Conductor
Si: Eg = 1.1 eV
SiO2: Eg = 9 eV
Ge: Eg = 0.75 eV
GaAs: Eg = 1.42 eV
Electrons and Holes in Semiconductor
N type

P type

Intrinsic semiconductor
Carriers come from valence
electron excitation

Key: Effective control


of charge carriers Doped semiconductor
Carrier type, density & mobility
determined in Hall measurements
Longitudinal conductance: B VH
Jx = Ex = e(ne + ph)Ex
Jx Ey
Longitudinal resistivity:  = 1/

The Hall coefficient:


Ey p h2  n e2
RH  
J x B e( p h  n e )
If electron is the dominant carrier in the material, then we
have: 1
R
 = 1/ = (ene) , and H
-1  
ne

Carrier density: n = -(eRH)-1, and the mobility: e = - RH/


Light Emission in Semiconductors
E
conduction electron
band -

Band
h
gap Electron-hole
recombination
+
valence
band hole
Si: Eg = 1.1 eV,  = 1100 nm
GaAs: Eg = 1.4 eV,  = 873 nm
AlAs: Eg = 2.23 eV,  = 556 nm

Si: indirect bandgap, ineffective


GaAs: direct bandgap, effective
Basic semiconductor devices
E C
p n p n p

Diode B
Metal-semiconductor
contacts Bipolar transistor
G
p+ G SiO2
S D S D
n n+ n+
p+ Inversion
Depletion p
region
G region

Junction field-effect Metal-oxide-semiconductor


transistor (JFET) FET (MOSFET)
Real Device Structures in IC
metal contacts

n+ p
n

Diode
Bipolar transistor

MOSFET

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