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Introduction To Static Induction Transistors

Static induction transistors (SITs) are high-speed, high-current field-effect transistors invented in the 1950s, designed for high-frequency and high-power applications. They operate using a built-in electric field to control charge carriers, allowing for fast response and low on-resistance. Despite their advantages, SITs are less common today due to manufacturing complexities and competition from other technologies, though they excel in niche applications requiring high voltage and low distortion.

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64 views8 pages

Introduction To Static Induction Transistors

Static induction transistors (SITs) are high-speed, high-current field-effect transistors invented in the 1950s, designed for high-frequency and high-power applications. They operate using a built-in electric field to control charge carriers, allowing for fast response and low on-resistance. Despite their advantages, SITs are less common today due to manufacturing complexities and competition from other technologies, though they excel in niche applications requiring high voltage and low distortion.

Uploaded by

hailegebrielkibebew
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Introduction to Static

Induction Transistors
The static induction transistor (SIT) is a type of field-effect transistor known for
its high-speed switching, high current capability, and low on-resistance.
Invented by Japanese engineers Junichi Nishizawa and Y. Watanabe in 1950,
SITs are designed for high frequency and high power applications.

Static induction is a principle where charge carriers move through a


semiconductor channel due to an electric field rather than direct injection from
an external voltage source. This fundamental concept allows SITs to achieve
high-speed operation and low on-resistance.

by Beka Kasahun
How Static Induction Works
1 Electric Field Control 2 Gate Action 3 Fast Response
Instead of relying on charge carrier The gate of an SIT depletes or Since the movement of charge
diffusion (as in BJTs) or direct gate modulates the carrier flow through carriers is governed by a built-in field
capacitance (as in MOSFETs), SITs use the channel, much like in a JFET but rather than slow diffusion processes,
a strong built-in electric field to with a more efficient field effect. SITs operate at extremely high
control current flow. frequencies (up to microwave
ranges).
SIT Symbol and Structure
Symbol Structure Materials

The SIT symbol resembles other field- SITs feature a vertical structure with the Originally made with silicon, modern SITs
effect transistors but with specific gate electrodes embedded within the may use silicon carbide for improved
modifications to indicate its unique channel. This design allows for high performance in high-temperature and
operation. The gate voltage creates an voltage handling and efficient current high-power applications.
electrostatic potential barrier in the flow through the device.
channel that can be raised or lowered.
SIT Operation Modes
Normal Conduction
SITs are generally conducting with zero Vgs and an applied Vds. This
allows electrons (majority charge carriers) to flow from source to
drain creating the drain current Id.

Partial Depletion
As Vgs is increased, the depletion layer grows in size, removing
electrons from the N-type channel material and restricting electron
flow from source to drain.

Cut-Off
At high gate voltages, the channel becomes almost completely
depleted of carriers, preventing electron current flow and turning the
device off.
Key Features of SITs
Depletion-Mode Device High Voltage/High Power
Typically "normally on" Handles high voltages due to its
(conducts at zero gate voltage). A vertical structure and space-
negative gate voltage turns it off, charge-limited current flow,
which differs from enhancement- making it suitable for power
mode devices like standard applications.
MOSFETs.

Thermionic Emission
Unlike MOSFETs/JFETs where current flows via drift in a conductive
channel, SITs rely on thermionic emission. This mechanism avoids channel
resistance, enabling high efficiency.
Advantages of SITs

High-Frequency Linearity Power Handling


Operation
Minimal distortion, Short channel length,
Fast switching (MHz- making it ideal for low gate series
GHz range) due to low analog/RF amplifiers resistance, low gate-
input capacitance and and high-end audio source capacitance, and
short channel length, equipment where small thermal
making SITs ideal for signal integrity is resistance enable
microwave crucial. excellent power
applications. handling capabilities.

Additional benefits include low noise, low distortion, high audio frequency
power capability, and short turn-on and turn-off time (typically 0.25 μs).
Disadvantages and Commercial
Status
1 Normally-On Behavior
Since SITs are normally conducting, they need a negative gate voltage to turn
off, which can be a drawback in some circuits and requires additional biasing
circuitry.

2 Complex Manufacturing
The fabrication process is more challenging compared to conventional
MOSFETs, leading to higher production costs and limited availability.

3 Limited Commercial Use


Due to advancements in IGBTs and MOSFETs, SITs are less common today,
except in niche applications like RF amplifiers and some power devices.
Companies and Applications

In the mid-seventies, Japanese companies Yamaha and Sony successfully used SITs in high-end VFET power amplifier designs, though these were
eventually discontinued. Recently, there has been renewed interest with Digital Do Main in Japan producing amplifiers based on newer versions of
original Yamaha silicon parts, and First Watt arranging production of new SIT devices using silicon carbide processes by SemiSouth.

While niche, SITs outperform other transistors in applications requiring kilovolt voltages with gigahertz speeds (radar, RF energy), ultra-low distortion
(audiophile amplifiers), and operation in extreme environments (aerospace, cryogenics).

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