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 24EC101
ELECTRON DEVICES
AND
CIRCUIT
THEORY

Department : Electronics and Communication Engineering

& VLSI Design and Technology
Batch/ : 2024-2028/I Year
Year : Dr. Subadra Murugan, Prof & Head
Created /VLSI
by Ms. Swetha Reddy A AP/ECE
Dat
e
:03.11.2024

4
SL NO Topics Page no.
TABLE OF
CONTENTS
1 Course Objectives 6

2 Pre Requisites 7

3 Syllabus 8

4 Course outcomes 10

5 CO- PO/PSO Mapping 11

6 Lecture Plan 13

7 Activity based learning 14

8 Lecture Notes 21

9 Assignments 46

10 Part A Question with answers 48

11 Part B Questions 51

12 Supportive online Certification courses 53

13 Video lecture links 55

14 Real time Applications in day to day life 56

and
to Industry

15 Contents beyond the Syllabus 59

16 Assessment Schedule 62

17 Prescribed Text Books & Reference Books 64

18 E-Books 66
19 Mini Project 67
20 List of Experiments 69
5
 COURSE OBJECTIVE

• To discuss the behavior of semiconductor diodes in various

applications.

• To familiarize the operation of BJT and FET.

• To construct simple electronic circuits using special semiconductor

devices.

• To understand the fundamental laws of electric circuits.

• To analyze the response of electric circuits using network theorems.

6
 PRE REQUISITES

 HSC Level

7
 SYLLABUS

24EC101 ELECTRON DEVICES AND CIRCUIT THEORY

3 024

UNIT I Overview of Electronic Devices and Electrical Circuits

9+6

Basic Electronic Components: Resistors, Capacitors, Inductors; Diodes types-PN Junction,

Special purpose diodes- Zener Diode, Photodiode, LED, Solar Cell-Characteristics. Basic
Electrical Circuits: Ohm's Law, Short and open circuits, Voltage division in series, current
division in parallel. Analysis of series and parallel circuits.

UNIT II Bipolar Junction Transistor 9+6

BJT Types - NPN and PNP transistors, Transistor Characteristics: Input and output
characteristics, and the concept of operating regions (active, cutoff, saturation) in
common base, common emitter and common collector Configurations -Advantages and
Disadvantages of BJT.

UNIT III Field Effect Transistors

9+6

Theory and Operation of JFET: Structure, types, operation and characteristics of JFET.
Advantages and Disadvantages of JFET. Theory and Operation of MOSFET: Structure,
types, operation and characteristics of MOSFET (enhancement-mode, depletion-mode).
Advantages and Disadvantages of MOSFET.

UNIT IV Circuit Theory

9+6

Equivalent resistance, Star-Delta conversion; Kirchhoff’s Laws: Kirchhoff’s Voltage Law

(KVL) and Kirchhoff’s Current Law (KCL); Mesh Analysis and Node Analysis (AC and DC).

UNIT V Network Theorems 9+6

Thevenin’s and Norton’s theorems – Superposition Theorem –Maximum power transfer

theorem, Millman’s theorem.

TOTAL: 45 PERIODS

8
 LIST OF EXPERIMENTS

LIST OF EXPERIMENTS: 30
PERIODS

VI characteristics of PN diode

VI characteristics of Zener diode.

VI Characteristics of BJT in Common Emitter

Configuration & also Simulate using PSPICE

VI Characteristics of BJT in Common Base Configuration

& also Simulate using PSPICE

VI Characteristics of BJT in Common Collector

Configuration & also Simulate using PSPICE

Characteristics of JFET & also Simulate using PSPICE or

Multisim.

Characteristics of MOSFET & also Simulate using

PSPICE or Multisim

Verification of Kirchhoff’s current law and Kirchhoff’s

voltage law

Verification of Thevenin’s theorem.

Verification of Norton’s theorem.

TOTAL:75 PERIODS
 COURSE OUTCOMES

Upon completion of the course, the students will be able to:

Course Outcomes

CO1 Explain the operating principles of electronic devices

CO2 Analyze the V-I characteristics of electronic devices.

Design basic electronic circuits using various electron
CO3 devices

CO4 Analyze electric circuits using network theorems.

Evaluate the Performance of Electrical and Electronic

CO5 Circuits Using Simulation Tools

CO6 Develop simple circuits for real time applications.

10
 CO- PO/PSO MAPPING
Mapping of Course Outcomes with Program Outcomes and
Program Specific Outcomes:

Program
Program Outcomes Specific
Outcomes
Le K3,
K3 K4 K4 K5 K5, A3 A2 A3 A3 A3 A3 A2 K6 K5 K3
CO vel K6

s of
CO PO- PO- PO- PO- PO- PO- PO- PO- PO- PO- PO- PO- PSO PSO PSO
1 2 3 4 5 6 7 8 9 10 11 12 -1 -2 -3

CO1 K2 1 1 2 - 1
3 1 2 1 - 1 - 1 - -
CO2 K2 1
2 1 2 - - 1 2 1 2 - 2 3 - -
CO3 K3 1
2 1 2 2 1 1 - 1 2 - 1 3 1 1
CO4 K3 1
1 2 2 2 - 1 - 1 2 - 1 2 - -
CO5 K3 1
1 2 2 1 - 1 - 1 2 - 1 3 - -
K3
CO6 3
1 - - 1 1 1 1 1 1 3 2 2 - -

11
UNIT –III FIELD EFFECT
TRANSISTORS
 LECTURE PLAN
UNIT II–TRANSISTORS
A
ct
Ta
u
Pr xo
al
No op Pert no
L
S.N of os aini m Mode of
Topic ec
o Peri ed ng y Delivery
tu
ods da CO Le
re
te ve
d
l
at
e
Theory and Operation of JFET:
1 3 CO2 K2 PPT
Structure, types
operation and characteristics of
4 CO2 K2 PPT
JFET.
Advantages and Disadvantages
2 1 CO2 K2 PPT
of JFET.
Theory and Operation of
MOSFET: Structure, types,
3 3 CO2 K2 PPT
operation and characteristics of
MOSFET (enhancement-mode)
Theory and Operation of
MOSFET: Structure, types,
operation and characteristics of 3 CO2 K2 PPT
MOSFET (depletion-mode).

Advantages and Disadvantages

4 1 CO2 K2 PPT
of MOSFET.
8 Total Hours 15 CO2 K2 PPT

13
ACTIVITY BASED
LEARNING

14
 ACTIVITY BASED LEARNING

TECHNICAL QUIZ : UNIT 3

1. In a JFET, the control of current is achieved by:

A) Gate-source voltage
B) Drain-source voltage
C) Gate-drain current
D) Gate current

2. The major difference between JFET and MOSFET is that:

A) JFET is unipolar, while MOSFET is bipolar
B) JFET has a PN junction gate, while MOSFET has an insulated gate
C) JFET has higher gain than MOSFET
D) JFET is voltage-controlled, whereas MOSFET is current-
controlled

3. In an N-channel JFET, the channel is formed by:

A) Holes
B) Electrons
C) Both holes and electrons
D) Depletion region

4. Which of the following statements is true about the MOSFET

operation in cutoff mode?
A) Drain current is at maximum
B) Drain current is zero
C) Source current equals gate current
D) Gate voltage is more positive than the drain voltage

5. What happens to the drain current in a MOSFET when the gate

voltage exceeds the threshold voltage?
A) It decreases
B) It becomes zero
C) It remains constant
D) It starts to increase

15
6. In a JFET, the pinch-off voltage is defined as the:
A) Voltage at which current is maximum
B) Voltage at which the current stops increasing
C) Voltage at which the channel closes completely
D) Gate voltage needed to operate the JFET

7. Which of the following parameters significantly affects the

MOSFET’s threshold voltage?
A) Channel length
B) Oxide thickness
C) Drain current
D) Source resistance

8. In an enhancement-mode MOSFET, the device remains off until:

A) The gate-source voltage is zero
B) The gate-source voltage is below the threshold voltage
C) The gate-source voltage exceeds the threshold voltage
D) The drain-source voltage exceeds the threshold voltage

9. The main advantage of MOSFET over JFET is:

A) Higher input impedance
B) Higher drain current
C) Lower power dissipation
D) Lower gate leakage current

10. Which MOSFET configuration is commonly used as a voltage

amplifier?
A) Common gate
B) Common source
C) Common drain
D) Source follower
16
Answer
Q. NO ANSWERS

1. A

2. B
3. B

4. B

5. D

6. C

7. B

8. C

9. A

10. B

17
PUZZLES
Puzzle 1:
A certain semiconductor device can control the current between two
terminals based on a small voltage applied at a third terminal. However,
unlike in a MOSFET, this device does not have an insulated gate. What
device is this?
Hints:
1. The device is voltage-controlled and not current-controlled.
2. The device operates with a PN junction at the gate.
3. The device is typically used in amplifying and switching applications but
has no oxide layer.
4. When the gate voltage reaches a specific threshold, the channel closes
completely.
Puzzle 2:
In a particular field-effect transistor, the drain current remains zero until a
certain voltage threshold is exceeded at the gate. Only then does the
current begin to flow. This device is often used in digital circuits. What is it?
Hints:
5. It has an insulated gate, unlike a JFET.
6. The device can operate in enhancement mode.
7. It is widely used in digital switching applications because of its high input
impedance.
8. This type of device comes in N-channel and P-channel varieties.
Puzzle 3:
In a particular type of MOSFET, the channel already exists even when the
gate voltage is zero. The drain current can then be reduced by applying a
negative voltage to the gate. What type of MOSFET is this?
Hints:
9. This MOSFET is a type that can operate in depletion mode.
10. It allows current to flow at zero gate-source voltage.
11. This MOSFET can both enhance and deplete the channel with varying
gate voltages.
12. It is different from an enhancement-mode MOSFET.

18
Puzzle 4:
A particular FET operates with a channel formed by majority carriers.
However, in one mode, it completely cuts off the current flow between the
drain and source when a particular voltage is applied at the gate. This mode
is critical for defining the cutoff characteristics. What is this mode called?
Hints:
1. This is a mode in both JFETs and MOSFETs.
2. It occurs when the gate voltage is such that the channel width reduces to
zero.
3. This mode is also associated with the term "pinch-off."
4. In MOSFETs, this mode is typically characterized by the threshold
voltage.

Puzzle 5:
You are given a semiconductor device with three terminals. When the gate-
to-source voltage is increased in a positive direction, the drain current starts
to increase, but only above a certain gate voltage threshold. What device
and mode does this describe?
Hints:
5. This device operates in enhancement mode.
6. The gate is insulated from the channel by an oxide layer.
7. It is widely used in power electronics due to its low gate current
requirements.
8. The device requires a gate voltage higher than the threshold to
"enhance" the channel.

19
PUZZLES ANSWERS

Puzzle 1:

ANS: JFET (Junction Field Effect Transistor)

Puzzle 2:

ANS: MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)

Puzzle 3:

ANS: Depletion-mode MOSFET

PUZZLE 4:

ANS: Cutoff mode

PUZZLE 5:

ANS: Enhancement-mode MOSFET

20
 LECTURE
NOTES
UNIT-III FIELD EFFECT TRANSISTORS
UNIT-III FIELD EFFECT
TRANSISTORS

FIELD EFFECT TRANSISTORS

22
FIELD EFFECT TRANSISTORS

23
 FIELD EFFECT TRANSISTORS
3.1 Introduction
In this type of transistor, both holes and electrons play part in the conduction
process. For this reason, it is some-times called a bipolar transistor. The
ordinary or bipolar transistor has two principal disadvantages. First, it has
a low input impedance because of forward biased emitter junction. Secondly,
it has considerable noise level. Although low input impedance problem may be
improved by careful design and use of more than one transistor, yet it is
difficult to achieve input impedance more than a few mega ohms. The field
effect transistor(FET) has, by virtue of its construction and biasing, large input
impedance which may be more than 100megaohms. The FET is generally much
less noisy than the ordinary or bipolar transistor. The rapidly expanding FET
market has led many semiconductor marketing managers to believe that this
device will soon become the most important electronic device, primarily
because of its integrated-circuit applications. In this Lecture notes, we shall
focus our attention on the construction, working and circuit applications of
field effect transistors.
Types of Field Effect Transistors
A bipolar junction transistor (BJT) is a current controlled device i.e., output
characteristics of the device are controlled by base current and not by base
voltage. However, in a field effect transistor(FET), the output characteristics
are controlled by input voltage (i.e., electric field) and not by input current.
This is probably the biggest difference between BJT and FET. There are two
basic types of field effect transistors: (i)Junction field effect transistor (JFET)
(ii)Metal oxide semiconductor field effect transistor (MOSFET)To begin with,
we shall study about JFET and then improved form of JFET, namely;
MOSFET.
Junction Field Effect Transistor (JFET) A junction field effect transistor is
a three terminal semiconductor device in which current conduction is by one
type of carrier i.e., electrons or holes. The JFET was developed about the same
time as the transistor but it came into general use only in the late 1960s. In a
JFET, the current conduction is either by electrons or holes and is controlled by
means of an electric field between the gate electrode and the conducting
channel of the device. The JFET has high input impedance and low noise level.
Constructional details:

A JFET consists of a p-type or n-type silicon bar containing two

pn junctions at the sides as shown in Fig.1. The bar forms the
conducting channel for the charge carriers. If the bar is of n-type,
it is called n- channel JFET as shown in Fig. 1(i) and if the bar is
of p-type, it is called a p-channel JFET as shown in Fig.1(ii).The
two PN junctions forming diodes are connected internally and a
common terminal called gate is taken out. Other terminals are
source and drain taken out from the bar as shown. Thus a JFET
has essentially three terminals via., gate (G), source(S) and
drain(D).

Fig.1
JFET Fig.2(i) shows n-channel JFET
polarities.
Fig.2(ii) shows the p-channelpolarities
JFET polarities.
whereas Note that in each
case, the voltage between the gate and source is such that the gate
is reverse biased. This is the normal way of JFET connection.
The drain and source terminals are interchangeable i.e., either
end can be used as source and the other end as drain.
Fig.2The following points may be noted (i)The input circuit (i.e.
gate to source) of a JFET is reverse biased. This means that the
device has high input impedance.(ii)The drain is so biased w.r.t.
source that drain current ID flows from the source to drain.(iii)In
all JFETs, source current Is is equal to the drain current i.e.IS= ID.
 Fig.2

Principle and Working of JFET

Fig.3 shows the circuit of n-channel JFET with normal polarities.
Note that the gate is reverse biased.

Principle
The two pn junctions at the sides form two depletion layers. The
current conduction by charge carriers (i.e. free electrons in this
case) is through the channel between the two depletion layers and
out of the drain. The width and hence resistance of this channel can
be controlled by changing the input voltage VGS. The greater the
reverse voltage VGS, the wider will be the depletion layers and
narrower will be the conducting channel. The narrower channel
means greater resistance and hence source to drain current
decreases. Reverse will happen should VGS decrease. Thus JFET
operates on the principle that width and hence resistance of the
conducting channel can be varied by changing the reverse voltage
VGS. In other words, the magnitude of drain current (ID) can be
changed by altering VGS.

Working
The working of JFET is as under :(i)When a voltage V DS is applied
between drain and source terminals and voltage on the gate is zero
See Fig.3 (i), the two pn junctions at the sides of the bar establish
depletion layers. The electrons will flow from source to drain
through a channel between the depletion layers.
The size of these layers determines the width of the channel and
hence the current conduction through the bar.(ii)When a reverse
voltage VGS is applied between the gate and source See Fig.3(ii),
the width of the depletion layers is increased. This reduces the
width of conducting channel, thereby increasing the resistance of
n-type bar. Consequently, the current from source to drain is
decreased. On the other hand, if the reverse voltage on the gate is
decreased, the width of the depletion layers also decreases. This
increases the width of the conducting channel and hence source
to drain current.

Fig.3

It is clear from the above discussion that current from source to

drain can be controlled by the application of potential(i.e. electric
field) on the gate. For this reason, the device is called field effect
transistor. It may be noted that a p-channel JFET operates in the
same manner as an n -channel JFET except that channel current
carriers will be the holes instead of electrons and the polarities of
VGS and VDS are reversed.

Note. If the V on the gate

GS
increased, areverse is layers touch
state is reached when the two depletion
voltage
each other and the channel is cut off.continuously
Under such conditions, the
channel becomes a non-conductor.
 Schematic Symbol of JFET

Fig.4 shows the schematic symbol of JFET. The vertical line in

the symbol may be thought

Fig.4
as channel and source (S) and drain (D) connected to this line. If the
channel is n-type, the arrow on the gate points towards the channel as
shown in Fig.4 (i). However, for p-type channel, the arrow on the gate
points from channel to gate
Importance of JFET

A JFET acts like a voltage controlled device i.e. input voltage

(VGS)controls the output current. This is different from ordinary
transistor(or bipolar transistor) where input current controls the output
cur-rent. Thus JFET is a semiconductor device acting like a vacuum
tube. The need for JFET arose because as modern electronic equipment
became increasingly transistorized, it became apparent that there were
many functions in which bipolar transistors were unable to replace
vacuum tubes.
Owing to their extremely high input impedance, JFET devices are more
like vacuum tubes than are the bipolar transistors and hence are able to
take over many vacuum-tube functions. Thus, because of JFET,
electronic equipment is closer today to being completely solid state. The
JFET devices have not only taken over the functions of vacuum tubes
but they now also threaten to depose the bipolar transistors as the most
widely used semiconductor devices.
As an amplifier, the JFET has higher input impedance than that of a
conventional transistor, generates less noise and has greater resistance to
nuclear radiations
 Difference Between JFET and Bipolar Transistor

The JFET differs from an ordinary or bipolar transistor in the following ways :

(i)In a JFET, there is only one type of carrier, holes in p-type channel and
electrons in n-type channel. For this reason, it is also called a unipolar
transistor. However, in an ordinary transistor, both holes and electrons play
part in conduction. Therefore, an ordinary transistor is sometimes called a
bipolar transistor.

(ii)As the input circuit (i.e., gate to source) of a JFET is reverse biased,
therefore, the device has high input impedance. However, the input circuit
of an ordinary transistor is forward biased and hence has low input
impedance.

(iii)The primary functional difference between the JFET and the BJT is that
no current (actually, a very, very small current) enters the gate of JFET
(i.e. IG= 0A). However, typical BJT base current might be a few μA while
JFET gate current a thousand times smaller [See Fig.5].

(iv)A bipolar transistor uses a current into its base to control a large current
between collector and emitter whereas a JFET uses voltage on the ‘gate’
( = base) terminal to control the current be-tween drain (= collector) and
source (
= emitter). Thus a bipolar transistor gain is characterized by current gain
whereas the JFET gain is characterized as a trans conductance i.e., the
ratio of change in output cur-rent (drain current) to the input (gate)
voltage.

(v)In JFET, there are no junctions as in an ordinary transistor. The

conduction is through an n- type or p-type semi-conductor material. For
this reason, noise level in JFET is very small.

Fig.
5
 Advantages and
Disadvantages of JFET
Advantages of JFET:

1.High Input Impedance: JFETs have very high input impedance, which
means they draw minimal current from the preceding stage, ideal for
impedance matching in amplification circuits
2.Low Power Consumption: As JFETs are controlled by voltage rather
than current, they consume less power compared to bipolar junction
transistors (BJTs).
3.Low Noise: JFETs generate low noise, making them suitable for audio,
RF, and other sensitive applications.
4.Good Thermal Stability: JFETs are less sensitive to temperature
variations, offering better performance stability in varying thermal
conditions.
5.High Frequency Response: JFETs can operate at higher frequencies,
suitable for RF applications and fast-switching circuits.
6.Simple Biasing: JFETs require simpler biasing arrangements, usually
involving fewer components.
7.Less Susceptible to Radiation: JFETs are generally more radiation-
resistant, making them suitable for space and high-radiation
environments.
8.No Secondary Breakdown: Unlike BJTs, JFETs do not suffer from
secondary breakdown, making them more reliable under high-voltage
conditions.
9.Low Distortion: JFETs exhibit low distortion in their operation,
enhancing audio and signal fidelity in amplifying circuits.
10.High Voltage Gain: Due to their high output impedance, JFETs
provide a high voltage gain, making them useful for voltage
amplification applications.

30
 Advantages and
Disadvantages of JFET
Disadvantages of JFET:

1.Limited Gain-Bandwidth Product: JFETs have a lower gain-

bandwidth product than some other transistor types, limiting their use in
very high-frequency applications.
2.Lower Voltage Gain: Compared to BJTs, JFETs typically have a lower
voltage gain in many applications.
3.Sensitivity to Static Charges: JFETs are highly sensitive to
electrostatic discharge (ESD), requiring careful handling to prevent
damage.
4.Smaller Current Handling: JFETs are limited in terms of current
handling capacity, which restricts their use in high-power applications.
5.Higher Output Impedance: JFETs have higher output impedance,
which may require buffering when driving low-impedance loads.
6.Limited Availability: Some types of JFETs are less commonly
available in comparison to BJTs and MOSFETs, which may limit design
choices.
7.Nonlinear Characteristics: JFETs exhibit nonlinearity in their transfer
characteristics, which can cause distortion if not properly managed.
8.Temperature Sensitivity of Pinch-Off Voltage: The pinch-off voltage
in JFETs can vary with temperature, impacting stability in sensitive
applications.
9.Lower Efficiency in Switching Applications: Compared to
MOSFETs, JFETs are generally less efficient in switching applications
due to slower transition times.
10.Fixed Threshold Characteristics: JFETs have fixed threshold
voltages, which limits flexibility in design adjustments compared to
MOSFETs with adjustable thresholds.

31
Metal Oxide Semiconductor FET (MOSFET)
The main drawback of JFET is that its gate must be reverse biased for proper
operation of the device i.e. it can only have negative gate operation for n-
channel and positive gate operation for p-channel. This means that we can only
decrease the width of the channel (i.e. decrease the *conductivity of the
channel) from its zero-bias size. This type of operation is referred to as
**depletion-mode operation. Therefore, a JFET can only be operated in the
depletion-mode. However, there is a field effect transistor (FET) that can be
operated to enhance (or increase) the width of the channel (with consequent
increase in conductivity of the channel) i.e. it can have enhancement-mode
operation. Such a FET is called MOSFET.

A field effect transistor (FET) that can be operated in the enhancement-mode is

called a MOSFET.

A MOSFET is an important semiconductor device and can be used in any of

the circuits covered for JFET. However, a MOSFET has several advantages
over JFET including high input impedance and low cost of production.

Types of MOSFETs :
There are two basic types of MOSFETs.

1.Depletion-type MOSFET or D-MOSFET.

The D-MOSFET can be operated in both the depletion-mode and the
enhancement-mode. For this reason, a D-MOSFET is sometimes called
depletion/enhancement MOSFET or sometimes Dual mode MOSFET.

2.Enhancement-type MOSFET or E-MOSFET.

The E-MOSFET can be operated only in enhancement mode. The manner in
which a MOSFET is constructed determines whether it is D-MOSFET or E-
MOSFET

NOTE:*With the decrease in channel width, the X-sectional area of the channel decreases
and hence its resistance increases. This means that conductivity of the channel will
decrease. Reverse happens if channel width increases.**With gate reverse biased, the
channel is depleted (i.e. emptied) of charge carriers (free electrons for n-channel and
holes for p- channel) and hence the name depletion-mode. Note that depletion means
decrease. In this mode of operation, conductivity decreases from the zero-bias level.
D-MOSFET

Fig. 13 shows the constructional details of n-channel D-MOSFET. It is similar to

n- channel JFET except with the following modifications/remarks :

(i)The n-channel D-MOSFET is a piece of n-type material with a p-type region

(called substrate) on the right and an insulated gate on the left as shown in Fig. 13.
The free electrons (Q it is n-channel) flowing from source to drain must pass
through the narrow channel between the gate and the p-type region (i.e.
substrate).

(ii)Note carefully the gate construction of D-MOSFET. A thin layer of metal oxide
(usually silicon dioxide, SiO2) is deposited over a small portion of the channel. A
metallic gate is deposited over the oxide layer. As SiO2 is an insulator, therefore,
gate is insulated from the channel. Note that the arrangement forms a capacitor.
One plate of this capacitor is the gate and the other plate is the channel with SiO2
as the dielectric. Recall that we have a gate diode in a JFET.

(iii)It is a usual practice to connect the substrate to the source (S) internally so that
a MOSFET has three terminals i.e. source (S), gate (G) and drain(D).

(iv)Since the gate is insulated from the channel, we can apply either negative or
positive voltage to the gate. Therefore, D-MOSFET can be operated in both
depletion- mode and enhancement-mode. However, JFET can be operated only in
depletion- mode

Fig:13
E-MOSFET

Fig. 13 right-side shows the constructional details of n-channel E-MOSFET. Its

gate construction is similar to that of D-MOSFET. The E-MOSFET has no
channel between source and drain unlike the D-MOSFET. Note that the substrate
extends completely to theSiO2 layer so that no channel exists. The E-MOSFET
requires a proper gate voltage to form a channel (called induced channel). It is
reminded that E- MOSFET can be operated only in enhancement mode. In short,
the construction of E-MOSFET is quite similar to that of the D-MOSFET except
for the absence of a channel between the drain and source terminals

Why the name MOSFET ?

We may wonder why is the device called MOSFET? The answer is simple. The
SiO2 layer is an insulator. The gate terminal is made of a metal conductor. Thus,
going from gate to substrate, you have a metal oxide semiconductor and hence
the name MOSFET. Since the gate is insulated from the channel, the MOSFET
is sometimes called insulated-gate FET (IGFET). However, this term is rarely
used in place of the term MOSFET.
Symbols for D-MOSFET

There are two types of D-MOSFETs viz (i)n-channel D-MOSFET and (ii)p-
channel D-MOSFET.
(i) n-channel D-MOSFET. Fig. 14 (i) shows the various parts of n-channel D-
MOSFET. The p-type substrate constricts the channel between the source and
drain so that only a small passage

Fig:14
remains at the left side. Electrons flowing from source (when drain is
positive
w.r.t. source) must pass through this narrow channel. The symbol for n-
channel D-MOSFET is shown in Fig. 14 (ii). The gate appears like a
capacitor plate. Just to the right of the gate is a thick vertical line
representing the channel. The drain lead comes out of the top of the channel
and the source lead connects to the bottom. The arrow is on the substrate
and points to the n-material, therefore we have n-channel D-MOSFET. It is a
usual practice to connect the substrate to source internally as shown in Fig.
14(iii). This gives rise to a three-terminal device.

(ii) p-channel D-MOSFET.Fig.15(i) shows the various parts of p-channel

D- MOSFET. The n-type substrate constricts the channel between the source
and drain so that only a small passage remains at the left side. The
conduction takes place by the flow of holes from source to drain through
this narrow channel. The symbol for p-channel D-MOSFET is shown in Fig.
15(ii). It is a usual practice to connect the substrate to source internally. This
results in a three-terminal device whose schematic symbol is shown in Fig.
15(iii).

Fig:15
Circuit Operation of D-MOSFET
Fig. 16(i) shows the circuit of n-channel D-MOSFET. The gate forms a small
capacitor. One plate of this capacitor is the gate and the other plate is the
channel with metal oxide layer as the dielectric. When gate voltage is
changed, the electric field of the capacitor changes which in turn changes the
resistance of the n- channel. Since the gate is insulated from the channel, we
can apply either negative or positive voltage to the gate. The negative-gate
operation is called depletion mode whereas positive-gate operation is known
as enhancement mode.
(i) Depletion mode

Fig. 16 (i) shows depletion-mode operation of n-channel D- MOSFET. Since

gate is negative, it means electrons are on the gate as shown is Fig. 16 (ii).
These electrons*repel the free electrons in the n-channel, leaving a layer of
positive ions in a part of the channel as shown in Fig. 16 (ii). In other words, we
have depleted (i.e. emptied) the n-channel of some of its free electrons.
Therefore, lesser number of free electrons are made available for current
conduction through the n-channel. This is the same thing as if the resistance of
the channel is increased. The greater the negative voltage on the gate, the lesser
is the current from source to drain. Thus by changing the negative voltage on
the gate, we can vary the resistance of the n- channel and hence the current
from source to drain. Note that with negative voltage to the gate, the action of
D-MOSFET is similar to JFET. Because the action with negative gate depends
upon depleting ( i.e. emptying) the channel of free electrons, the negative-gate
operation is called depletion mode.

Fig:16
(ii) Enhancement mode

Fig. 17 (i) shows enhancement-mode

operation of n-channel D-MOSFET.
Again, the gate acts like a capacitor.
Since the gate is positive, it induces
negative charges in the n-channel as
shown in Fig. 17 (ii). These negative
charges are the free electrons drawn into
the channel. Because these free electrons
are added to those already in the
Note:*If one plate of the capacitor is negatively
channel, thecharged,
total itnumber
induces positive
of free
charge on the other plate. electrons in the channel is increased.
Thus a positive gate voltage enhances or
increases the conductivity of the
channel.
The greater the positive voltage on the gate, greater the conduction from source
to drain. Thus by changing the positive voltage on the gate, we can change the
conductivity of the channel. The main difference between D-MOSFET and
JFET is that we can apply positive gate voltage to D-MOSFET and still have
essentially
*zero current. Because the action with a positive gate depends upon enhancing
the conductivity of the channel, the positive gate operation is called
enhancement mode.

Fig:17
The following points may be noted about D-MOSFET operation :

(i)In a D-MOSFET, the source to drain current is controlled by the electric field
of capacitor formed at the gate.

(ii)The gate of JFET behaves as a reverse-biased diode whereas the gate of a D-

MOSFET acts like a capacitor. For this reason, it is possible to operate D-
MOSFET with positive or negative gate voltage.

(iii)As the gate of D-MOSFET forms a capacitor, therefore, negligible gate

current flows whether positive or negative voltage is applied to the gate. For this
reason, the input impedance of D-MOSFET is very high, ranging from 10,000
MΩ to 10,000,00 MΩ.

(iv)The extremely small dimensions of the oxide layer under the gate terminal
result in a very low capacitance and the D-MOSFET has, therefore, a very low
input capacitance. This characteristic makes the D-MOSFET useful in high-
frequency applications.

*Note that gate of JFET is always reverse biased for proper operation. However,
in a MOSFET, because of the insulating layer, a negligible gate current flows
whether we apply negative or positive voltage to gate.
 D-MOSFET Transfer Characteristic

Fig. 18 shows the transfer characteristic curve (or transconductance curve)

for n-channel D- MOSFET. The behavior of this device can be beautifully
explained with the help of this curve as under :

(i)The point on the curve where VGS = 0, ID = IDSS. It is expected because IDSS is
the value of ID when gate and source terminals are shorted i.e. VGS = 0.

(ii)As VGS goes negative, ID decreases below the value of IDSS till ID reaches
zero when VGS =VGS (off) just as with JFET.

(iii)When VGS is positive, ID increases above the value of IDSS. The maximum
allowable value of ID is given on the data sheet of D-MOSFET.

Fig:18
Note: that the transconductance curve for the D-MOSFET is very similar to the
curve for a JFET. Because of this similarity, the JFET and the D-MOSFET
have the same transconductance equation
Transconductance and Input Impedance of D-
MOSFET
(i) D-MOSFET Transconductance (gm).

The value of gm is found for a D-MOSFET in the same way that it is for the JFET
i.e.

(ii) D-MOSFET Input Impedance.

The gate impedance of a D-MOSFET is extremely high. For example, a

typical D-MOSFET may have a maximum gate current of 10 pA when VGS
= 35V

With an input impedance in this range, D-MOSFET would present virtually

no load to a source circuit.

E-MOSFET Two things are worth noting about E-MOSFET. First, E-

MOSFET operates only in the enhancement mode and has no depletion mode.
Secondly, the E-MOSFET has no physical channel from source to drain
because the substrate extends completely to the SiO2 layer [See Fig. 19(i)].

It is only by the application of VGS (gate-to-source voltage) of proper

magnitude and polarity that the device starts conducting. The minimum value
of VGS of proper polarity that turns on the E-MOSFET is called Threshold
voltage[VGS(th)]. The n- channel device requires positive VGS >>VGS (th) and the
p-channel device requires negative VGS >>VGS (th)

Circuit Operation of E MOSFET.

Fig. 19(i) shows the circuit of n-channel E-MOSFET. The circuit action is as
under :
(i)When VGS = 0V [See Fig. 19(i)], there is no channel connecting the source
and drain. The p substrate has only a few thermally produced free electrons
(minority carriers) so that drain current is essentially zero. For this reason, E-
MOSFET is normally OFF when VGS = 0 V. Note that this behavior of E-
MOSFET is quite different from JFET or D-MOSFET.
 Fig:19
(ii)When gate is made positive ( i.e. VGS is positive) as shown in Fig. 19(ii), it
attracts free electrons into the p region. The free electrons combine with the
holes next to the SiO2 layer. If VGS is positive enough, all the holes touching the
SiO2 layer are filled and free electrons begin to flow from the source to drain.
The effect is the same as creating a thin layer of n-type material (i.e. inducing a
thin n- channel) adjacent to the SiO2 layer. Thus the E-MOSFET is turned ON
and drain current ID starts flowing form the source to the drain. The minimum
value of VGS that turns the E-MOSFET ON is called threshold voltage[VGS (th)].

(iii)When VGS is less than VGS (th), there is no induced channel and the drain current
ID is zero. When VGS is equal to VGS (th), the E-MOSFET is turned ON and the
induced channel conducts drain current from the source to the drain. Beyond VGS
(th), if the value of VGS is increased, the newly formed channel becomes wider,
causing ID to increase. If the value of VGS decreases [not less than VGS (th)],the
channel becomes narrower and ID will decrease. This fact is revealed by the
transconductance curve of n-channel E-MOSFET shown in Fig. 20. As you can
see, ID = 0 when VGS = 0.Therefore, the value of IDSS for the E-MOSFET is zero.
Note also that there is no drain current until VGS reaches VGS (th)

Fig:20

Schematic Symbols. Fig. 20(i) shows the schematic symbols for n-channel E-
MOSFET whereas Fig. 20 (ii) shows the schematic symbol for p-channel E-
MOSFET. When VGS = 0, the E-MOSFET is OFF because there is no conducting
channel between source and drain. The broken channel line in the symbols
indicates the normally OFF condition
Equation for Transconductance Curve. Fig. 21 shows the
transconductance curve for n-channel E-MOSFET. Note that this curve is
different from the transconductance curve for n-channel JFET or n-channel D-
MOSFET. It is because it starts at VGS (th) rather than VGS (off) on the horizontal
axis and never intersects the vertical axis. The equation for the E-MOSFET
transconductance curve(for VGS > VGS (th) ) is

The constant K depends on the particular E-MOSFET and its value is

determined from the following equation :

Fig:21
Any data sheet for an E-MOSFET will include the current ID(on) and the voltage
VGS (on) for one point well above the threshold voltage as shown in Fig. 21
Comparisons between
transistors
Comparisons between
transistors
 Advantages and
Disadvantages of MOSFET
Advantages of MOSFET:

1.High Input Impedance: MOSFETs have extremely high input

impedance, making them ideal for applications where minimal input
current is desired.
2.Fast Switching Speed: Due to their structure, MOSFETs switch
quickly, making them suitable for high-speed applications, including
digital circuits and switching power supplies.
3.Low Power Consumption: They consume little power when in a stable
on or off state, improving efficiency and battery life in portable devices.
4.Scalability for Miniaturization: MOSFETs can be made extremely
small, enabling them to be used in densely packed integrated circuits
(ICs) and advancing microelectronics.
5.Low Noise: MOSFETs generate low electronic noise, making them
suitable for precision and low-noise applications like audio amplifiers.
6.High Efficiency in Switching: MOSFETs operate efficiently in
switching applications, with minimal power loss during transitions.
7.Thermal Stability: MOSFETs have relatively stable performance over
a wide temperature range, suitable for use in varying environmental
conditions.
8.Low Distortion: The linear response of MOSFETs in amplification
applications reduces harmonic distortion, beneficial for audio and RF
applications.
9.Wide Range of Operating Voltages: MOSFETs are available for low
and high-voltage applications, offering flexibility across diverse circuits.
10.Compatible with Digital Logic: MOSFETs work well with digital
logic levels, which is crucial for microprocessors, microcontrollers, and
digital signal processing.

44
 Advantages and
Disadvantages of MOSFET
Disadvantages of MOSFET:

1.Sensitive to Static Electricity: MOSFETs are highly sensitive to ESD

(electrostatic discharge), requiring careful handling to avoid damage.
2.Higher Cost for High Power: High-power MOSFETs are generally more
expensive than BJTs or other types of transistors used in power applications.
3.More Complex Gate Drive Requirements: MOSFETs require proper gate
voltage levels and driving circuits, especially for high-power and high-speed
switching.
4.Susceptible to Thermal Runaway in High Power: Although MOSFETs
have good thermal characteristics, high-power applications can still lead to
thermal runaway if not properly managed.
5.Limited Gain Compared to BJTs: MOSFETs typically offer lower current
gain than BJTs, which might require additional stages in some amplifier
designs.
6.Larger Footprint for Higher Currents: For high-current applications,
MOSFETs require larger sizes or additional components to handle heat
dissipation.
7.Low Transconductance at Low Temperatures: The performance of
MOSFETs can degrade at very low temperatures, impacting operation in
extreme environments.
8.Complex Parasitic Capacitances: MOSFETs exhibit parasitic capacitances
that can affect their switching performance, especially in high-frequency
applications.
9.Threshold Voltage Variations: Variations in threshold voltage due to
manufacturing differences or temperature can impact performance and
stability.
10.Limited Analog Performance in Some Applications: MOSFETs are not
as linear as BJTs in some analog applications, which can lead to higher
distortion in specific amplifier designs.

45
ASSIGNMENTS

46
 Assignment

Draw and explain the I-V characteristics curves for

both JFET and MOSFET. Describe how these curves K2
1.
represent the behavior of the transistors in different CO2
regions (e.g., ohmic, saturation, cutoff).
Describe how temperature variations affect the
K2
2. performance of JFETs and MOSFETs, and explain why
CO2
these effects occur.
Given a JFET circuit with specified values for gate-
source voltage (VGS) and drain-source voltage (VDS​), K3
3.
calculate the drain current (ID​) using the JFET’s CO2
characteristic equations.
Design a basic common-source amplifier using an N-
K3
channel MOSFET. Specify the required values of
4. CO2
resistors and capacitors to achieve a particular gain
and frequency response.
Design and simulate a MOSFET switching circuit that
K3
toggles an LED on and off based on an input control
5. CO2
voltage. Explain how the MOSFET acts as a switch in
this application.

47
 PART A
2 MARKS QUESTIONS WITH ANSWERS

48
 Part A Question and Answers

1. What is a JFET, and how does it operate?

A Junction Field Effect Transistor (JFET) is a voltage-controlled device where
current flow between drain and source is controlled by the electric field
applied to the gate.

2. Define the pinch-off voltage in a JFET.

Pinch-off voltage (VP) is the minimum gate-source voltage at which the JFET
channel becomes fully depleted, limiting the drain current despite
increases in drain-source voltage

3. What are the types of JFETs?

JFETs are classified as N-channel and P-channel, based on the type of
semiconductor material in the channel.

4. Why does a JFET have high input impedance?

In a JFET, the gate is reverse-biased, so it draws minimal current, resulting
in high input impedance.

5. Explain the role of the gate terminal in a JFET.

The gate terminal controls the current flow between the drain and source
by modulating the electric field in the channel.

6. What are the main regions of operation in a JFET?

The main regions are the ohmic (linear) region, the active (saturation)
region, and the cutoff region.

7. Mention two applications of JFETs.

JFETs are commonly used in amplifiers and as electronic switches due to
their high input impedance and low noise

8. What is the difference between JFET and BJT?

JFETs are voltage-controlled devices with high input impedance, while BJTs
are current-controlled devices with lower input impedance.

9. Define the term 'channel' in a JFET.

The channel is the path between the drain and source through which
current flows, and its conductivity is controlled by the gate voltage.

10. Why is JFET considered unipolar?

JFET is called unipolar because current conduction occurs through only one
type of charge carrier (electrons in N-channel, holes in P-channel).

49
 Part A Question and Answers

11.What is a MOSFET, and how does it differ from a JFET?

A MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) is a voltage-
controlled transistor with an insulated gate, which offers even higher input impedance
than JFETs.

12.Define the threshold voltage (Vth​) in a MOSFET.

Threshold voltage (Vth​) is the minimum gate-source voltage required to create a
conductive channel between the drain and source.

13.What are the two main types of MOSFETs?

MOSFETs are classified as enhancement-mode and depletion-mode MOSFETs.

14.Explain the difference between N-channel and P-channel MOSFETs.

N-channel MOSFETs have electrons as the charge carriers and generally exhibit
faster switching and lower on-resistance, while P-channel MOSFETs use holes as
charge carriers.

15.What is the purpose of the oxide layer in a MOSFET?

The oxide layer insulates the gate from the channel, allowing the gate to control
current without direct conduction, providing high input impedance.

16.List two applications of MOSFETs.

MOSFETs are widely used in digital circuits, such as microprocessors, and in power
electronics for switching applications.

17.What is the difference between enhancement-mode and depletion-mode

MOSFETs?
Enhancement-mode MOSFETs require a positive gate voltage (for N-channel) to form
a conductive channel, while depletion-mode MOSFETs have a pre-existing channel
and can conduct without a gate voltage.

18.Why are MOSFETs more sensitive to static electricity than JFETs?

The insulated gate of MOSFETs is highly sensitive to electrostatic discharge, which
can damage the thin oxide layer.

19.What are the key regions of operation in a MOSFET?

The key regions are the cutoff region, the ohmic (linear) region, and the saturation
(active) region.

20.Explain why MOSFETs are preferred in high-speed switching applications.

MOSFETs have fast switching speeds and low power consumption in switching
states, making them ideal for high-speed digital circuits.

50
PART B & C
QUESTIONS

51
 Part B Questions

1. Explain the four distinct regions of theoutput

characteristics of the JFET.(8 Mark)[May/June 2014]
(CO2 K2)
With the help of suitable diagrams explain the working
of different types of MOSFET.(10 Mark) [May/June 2014]
(CO2 K2)

2. Briefly describe some application of JFET.(6 mark)

[May/June 2014] (CO2 K2)

3. Draw the circuit diagram for obtaining the drain and

transfer characteristics for an N channel JFET.(16 Mark)
[Nov/Dec 2014, Apr/May 2015, Nov/Dec 2016] (CO2 K2)

4. Draw the circuit diagram for cross section of an

Enhancemnet MOSFET. Also discuss the Drain and
transfer characteristics for EMOSFET. (16 Mark)
[Nov/Dec 2014] (CO2 K2)

5. Discuss the characteristics of MOSFET.(10 Mark)

[Apr/May 2015] (CO2 K2)

6. Explain the concept of Threshold voltage in a MOSFET.

(6 Mark) [Apr/May 2015] (CO2 K20)

7. Draw the circuit diagram for obtaining the drain and

transfer characteristics for an P channel JFET.(16 Mark)
[Nov/Dec 2015] (CO2 K2)

52
SUPPORTIVE ONLINE
CERTIFICATION
COURSES

53
 Supportive online Certification courses

ONLINE COURSE NPTEL:

https://nptel.ac.in/courses17/103/117103063/

Basic Electronics
By Prof. Chitralekha Mahanta

Department of Electronics and Communication Engineering

Guwahati | IIT Madras

Semiconductor Diodes-Semiconductor materials- intrinsic and

extrinsic types, Ideal Diode, Terminal characteristics of diodes,p-n
junction under open circuit condition,p-n junction under forward bias
and reverse bias conditions,p-n junction in breakdown region, Diode
small signal mode, Zener diode and applications, Rectifier Circus

Bipolar Junction Transistors (BJT)- Biasing the BJT: fixed bias, emitter
feedback bias, collector feedback bias and voltage divider bias,
Basic BJT amplifier configuration: common emitter, common base
and common collector amplifiers, Transistor as a switch: cut-off and
saturation modes, High frequency model of BJT amplifier

Operation Amplifier (Op-amps)-Ideal Op-amp, Differential amplifier:

differential and common mode operation, common mode rejection
ratio (CMRR), Practical op-amp circuits: inverting amplifier, non -
inverting amplifier, weighted summer, integrator, differentiator,
Large signal operation of op-amps, Other applications of op-amps:
instrumentation circuits, active filters, controlled sources,
logarithmic amplifiers, waveform generators, Schmitt triggers,
comparators

54
 Supportive Link to Videos

https://www.coursera.org/lecture/transistor-field-
1 Construction of BJT effect-transistor-bipolar-junction-transistor/basic-
operation-of-bjt-lkqEg

https://www.youtube.com/watch?v=xY4_mJk6QAk
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https://doubtnut.com/question-answer-physics/one-
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13165585

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Construction & Working of https://www.youtube.com/watch?v=_DZ7baOhNFQ

5
FET

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Type Of MOSFET

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7
Type Of MOSFET

55
 REAL TIME
APPLICATIONS IN DAY
TO DAY LIFE AND TO
INDUSTRY

56
 Real time Applications in day to day life and to
Industry

1. Electronic Switch
One of the most prominent applications of transistors is switching. A transistor basically
has four regions of operation, i.e., namely active, saturation, cut off, and forward active.
For a transistor to act like a switch, the saturation and cut off region of operations of a
transistor are generally used. This is because when the transistor is operated in the
saturated region, the current value is maximum and the voltage level is equal to zero.
Similarly, when the transistor is operated in the cut-off region, the value of current is
zero and the value of voltage is maximum. The operation of a transistor in the saturation
and cut off region resembles the working of a closed and open switch respectively. A
transistor operating as a switch tends to produce no noise and the rate of the switching
operation provided by the transistor is quite high. Also, transistor switches do not have
mechanical parts, hence there exist fewer chances of device failure due to wear and tear.
Other advantages of using transistors as switches include compact size, lightweight, low
cost of manufacturing, minimum maintenance cost, etc.

57
2.Laser Range Finder
A laser range finder is a device or a gadget that is generally used to measure the
distance between the target object and the instrument. Architecture, interior decoration,
construction, hunting, agriculture, defence, sports, etc. tend to form some of the daily
life applications where laser range finder devices can be employed. The internal
circuitry of the laser range finder device primarily contains transistors to perform the
switching, amplification, and other related operations. Also, the motor control operation
or the motor drivers of the internal circuit of a laser range finder device usually contain
an assembly of pulse width modulators and transistors. A laser range finder is also
known as a laser telemeter.

58
 CONTENT
BEYOND THE
SYLLABUS

59
 CONTENTS BEYOND SYLLABUS

1. Short-Channel Effects in MOSFETs

Beyond Syllabus Content: In modern electronic design, MOSFETs are scaled down
to very small sizes to increase the density of transistors on a chip. When MOSFETs
become very short, they exhibit "short-channel effects." These include threshold
voltage roll-off, drain-induced barrier lowering (DIBL), and increased leakage
currents.
Key Concepts:
Threshold Voltage Roll-Off: Reduction in threshold voltage as channel length
decreases.
Drain-Induced Barrier Lowering (DIBL): The reduction of the barrier at the
source due to the influence of the drain, causing an increase in leakage
current.
Velocity Saturation: At high electric fields, carrier velocity saturates, affecting
the current.
. Applications:Understanding short-channel effects is essential for designing
nanoscale transistors in advanced CMOS technologies.

2. JFET as a Voltage-Controlled Resistor

Beyond Syllabus Content: In addition to amplification, JFETs can function as
variable resistors controlled by the gate voltage, making them useful in analog
circuits.
Key Concepts:
Linear Region Operation: In the ohmic region (when the drain-source voltage
is low), JFETs can be used as a voltage-controlled resistor.
Applications in Analog Design: Useful in creating variable-gain amplifiers,
mixers, and audio signal processing circuits.
Applications: Commonly used in analog circuits where precise control of resistance
is needed.

60
3. Body Effect in MOSFETs
Beyond Syllabus Content: The body effect is a phenomenon where the
threshold voltage of a MOSFET changes due to a voltage difference between
the source and the body (bulk).
Key Concepts:
Threshold Voltage Variation: As the source-to-body voltage increases,
the threshold voltage of the MOSFET also increases.
Importance in CMOS Design: Understanding and managing the body
effect is crucial in integrated circuit design to ensure consistent threshold
voltages across devices.
Applications: It is particularly important in analog circuits and power devices
where the substrate might not be at a fixed potential.
4. Hot Carrier Injection in MOSFETs
Beyond Syllabus Content: When MOSFETs operate at high electric fields,
some carriers gain enough energy to get "injected" into the gate oxide, which
can degrade the transistor over time.
Key Concepts:
Mechanism: High-energy electrons or holes are injected into the gate
oxide, causing trapped charges and potentially degrading device
performance.
Reliability Concern: Hot carrier injection is a significant reliability
concern in high-speed circuits and affects the lifespan of integrated
circuits.
Applications: This is especially relevant in high-frequency circuits and has led
to research into improving MOSFET reliability in high-performance
applications.
5. Flicker Noise (1/f Noise) in JFETs and MOSFETs
Beyond Syllabus Content: Flicker noise, also known as 1/f noise, is a type of
electronic noise that is inversely proportional to the frequency. It is
prominent in low-frequency applications, such as audio electronics.
Key Concepts:
Source of 1/f Noise: Originates from traps in the semiconductor material
or oxide.
JFET vs. MOSFET Noise: JFETs generally have lower 1/f noise compared
to MOSFETs, making them suitable for low-noise applications.
Applications: Critical in designing low-noise amplifiers, sensors, and precision
analog systems.

61
ASSESSMENT
SCHEDULE

62
Assessment Schedule

ASSESSMENT DATES

FIRST INTERNAL ASSESSMENT 17.10.2024 to 22.10.2024

23.11.2024 to 28.11.2024
SECOND INTERNAL ASSESSMENT

MODEL EXAMINATION 16.12.2024 to 23.12.2024

63
 PRESCRIBED TEXT
BOOKS & REFERENCE
BOOKS

64
PRESCRIBED TEXT BOOKS & REFERENCE BOOKS

TEXT BOOKS:

1.Charles K. Alexander, Matthew N. O. Sadiku, Fundamentals of Electric

Circuits, 7th Edition, McGraw Hill 2022.

2.Robert L.Boylestad, Louis Nashelsky, Electronic Devices and Circuit

Theory 11th Edition, 2017.

REFERENCES:

1.W.H.Hayt, J.E.Kemmerly & S.M.Durbin, Engineering Circuit Analysis, 9 th

Edition, McGraw Hill Education, New Delhi, India, 2019.

2.Joseph Edminister and Mahmood Nahvi, ―Electric Circuits, Schaum‘s

Outline Series, 5th Edition Reprint, Tata McGraw Hill Publishing Company,
New Delhi, 2016.

3.David A Bell, Electric Circuits and Electronic Devices, Oxford university

Press, 2010.

4.Thomas L.Floyd, Electronic Devices, 9 th Edition, Pearson, 2017.

5.Donald A Neaman, Semiconductor Physics and Devices, 4 th Edition,

McGraw Hill, 2017.

6.Dr.R.S.Sedha, A Textbook of Applied Electronics, S Chand and company

limited, 2019.

NPTEL LINK:https://onlinecourses.nptel.ac.in/noc22_ee93/preview
NPTEL LINK:https://onlinecourses.nptel.ac.in/noc20_ee64/preview

65
 E-BOOKS

❑ AVAILABLE E-
BOOKS FOR FREE:

S.NO E-BOOKS

Electronic devices and circuits By Salivahanan

1
https://wiac.info/doc-viewer
2 Electronic Devices by Mr. S.Ali Asgar

http://www.crectirupati.com/sites/default/files/lecture_notes/
EDC
%20Lecture%20Notes.pdf
3 Electronic Devices and Amplifier Circuits By Steven T Karris

https://www.e
ngineeringbookspdf.com/electronic-
devices- amplifier-circuits-steven-t-karris/
4 Electronic Devices and Circuit Theory by Robert L
Boylestad, Louis Nashelsky

https://www.cheg
g.com/homework-help/electronic-devices- and-
circuit-theory-11th-edition-solutions-9780132622264
5 Solid stste electronic devices by Ben.G.Streetman
and Sanjay Kumar Baneerjee

https://www.mentorp
hysics.com/streetman-and-banerjee- solid- state-
electronic-devices-download-as-pdf/
MINIPROJECT
SUGGESTIONS

67
Mini Project suggestions

S.No Name of The Project K-Level

LEVEL 1

1. Hand Steadiness Tester K5

2. Wireless Audio Transmitter for TV K5

LEVEL 2

3. Water Level Indicator K5

4. Rain Sensor alarm K5

LEVEL 3

5. THREE STAGE AMPLIFIER WITH CURRENT K4

LIMITER
6. Ticking Bomb K5

LEVEL 4

7. Lie Detector K5

8. Mains Finder K5

LEVEL 5

9. Touch switch K5

10. LED Blinker Circuit K5

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 LIST OF EXPERIMENTS

LIST OF EXPERIMENTS:

• Characteristics of JFET & also Simulate using PSPICE or

Multisim.

• Characteristics of MOSFET & also Simulate using PSPICE or

Multisim
Characteristics of JFET

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71
72
Characteristics of MOSFET

73
74
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 Thank you

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