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Flash Memory

The document provides a comprehensive overview of flash memory, detailing its characteristics, operation, and comparison with other memory types such as ROM, SRAM, and DRAM. It explains the structure and functioning of flash memory cells, programming, reading, and erasing operations, as well as the advantages of USB flash drives. Flash memory is highlighted as a versatile, non-volatile storage solution with high density and cost-effectiveness, making it suitable for modern storage applications.

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0% found this document useful (0 votes)
20 views28 pages

Flash Memory

The document provides a comprehensive overview of flash memory, detailing its characteristics, operation, and comparison with other memory types such as ROM, SRAM, and DRAM. It explains the structure and functioning of flash memory cells, programming, reading, and erasing operations, as well as the advantages of USB flash drives. Flash memory is highlighted as a versatile, non-volatile storage solution with high density and cost-effectiveness, making it suitable for modern storage applications.

Uploaded by

cocic79333
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Western Yangon Technological

University

FLASH MEMORY
CONTENTS
o Introduction to Flash memory

o Flash memory Cell

o Basic Flash memory Operation

o Flash Memory Array

o Comparison of Flash Memory with Other


Memories

o USB Flash Drive


The Ideal Memory has
 High storage capacity
 Nonvolatility
 In system read and write capability
 Comparatively fast operation
 Cost effectiveness

The traditional memory technologies such as ROM, PROM,


EPROM, EEPROM, SRAM, and DRAM individually exhibit one or
more these characteristics.
Flash memory has all of the desired characteristics.
Introduction to Flash Memory
 Flash memories are high-density read/write memories (high-
density translates into large bit storage capacity) that are
non-volatile, which means that data can be stored indefinitely
without power.

 High-density means that a large number of cells can be


packed into a given surface area on a chip; that is, the higher
the density, the more bits that can be stored on a given size
chip.

 This high density is achieved in flash memories with a


storage cell that consists of a single floating-gate MOS
transistor. A data bit is stored as charge or the absence of
charge on the floating gate depending if a 0 or a 1 is stored.
Flash Memory Cell

 The stacked gate MOS transistor consists of a control


gate and a floating gate in addition to the drain and
source.

 The floating gate stores electrons (charge) as a result


of a sufficient voltage applied to the control gate.

 The amount of charge present on the floating gate


determines if the transistor will turn on and conduct
current from the drain to the source when a control
voltage is applied during a read operation.
 A 0 is stored when there is more charge and a 1 is
stored when there is less or no charge
BASIC OPERATION OF
FLASH MEMORY
PROGRAMMING IN
CELLS

To store a 0, a positive voltage is To store a 1, no charge is


applied added and
to the control gate. the cell is left in the erased
condition
READ
Operation

When a 0 is read, the transistor When a 1 is read, the transistor


remains off turns on because the absence of
because the charge on the floating charge on the floating gate allows
gate the read voltage to exceed the
prevents the read voltage from turn-on threshold
exceeding
the turn-on threshold.
Erase
Operation
 During an erase operation, charge is removed
from all the memory cells.

 To erase a cell, a sufficient positive voltage is


The storage cell
applied to the source with respect to the
in a flash
control gate to remove charge from the memory
floating gate during the erase operation.

 This is opposite in polarity to that used in


programming.

 A flash memory is always erased prior to being


reprogrammed. Simplified
illustration of
removing charge
Flash Memory
 Only one row line is accessedArray
at a time. When a cell in a given bit line
turns on (stored 1) during a read operation, there is current through
the bit line, which produces a voltage drop across the active load.

 This voltage drop is compared to a reference voltage with a


comparator circuit and an output level indicating a 1 is produced.

 If a 0 is stored, then there is no current or little current in the bit line


and an opposite level is produced on the comparator output.

 The memory stick is a storage medium that uses flash memory


technology in a physical configuration smaller than a stick of chewing
gum.

 Memory sticks are typically available up to 64 GB capacities and as a


kit with a PC card adaptor. Because of its compact design, it is ideal for
use in small digital electronics products, such as laptop computers and
digital cameras.
 Bit Lines: These are
vertical lines that connect
to each memory cell.

 Row Select Lines:


These are horizontal lines
that select which row of
memory cells to access.

 Column Select Lines:


These lines select which
column of memory cells
to access.

 Comparator: This
compares the data read
from the memory cell
with a reference value.

 Data Out: This is where


the data read from the
COMPARISON OF FLASH
MEMORIES
Comparison of Flash Memories with
other memories
Flash Vs ROM, PROM ,EPROM ,
EEPROM
Flash Memory Vs Read–only Memory(ROM)
Flash memory is a type of non-volatile storage that retains
data even when power is removed. It’s widely used in
devices like USB drives, SSDs (solid state drives),memory
cards, and mobile phones. Flash memory is popular due to
its durability, speed and compact size.
VS
ROM (Read-Only Memory) is non-volatile memory that
permanently stores essential data, like firmware. This means that
the information stored in ROM is permanent and remains even
when the device's power is turned off. Data cannot be easily
changed. They have high-density devices.
COMPARISON OF FLASH VS ROM
Feature Flash Memory ROM(Read-Only Memory)
Type of Memory Non-volatile Non-volatile
Modifiability Can be modified Cannot be modified
Uses Cases Used in USB drives, SSDs, BIOS Used in firmware,
microcontrollers
Read/Write Speed Faster read access Slower read access
Cost More expensive per unit storage Cheaper for fixed tasks
Power Usage Moderate power consumption Low power consumption
Data Retention Retains data for years without Retains data without
power power indefinitely

Key Points

In essence, ROM is designed for storing permanent data and


instructions, while flash memory is more versatile for storing and
modifying data in various electronic devices.
FLASH VS PROM AND EPROM
PROM PROM
PROM stands for Programmable read-only memory. Once
programmed, the data stored in PROM cannot be altered or
erased. But Data stored in a PROM is not lost when the device is
powered off. They are mainly used various applications where
data stability and security are crucial.

EPROM EPROM
EPROM stands for Erasable Programmable Read-Only
Memory. Once programmed, data can only be read from
EPROM. Data can be erased and reprogrammed using ultraviolet
light. EPROM is a relatively reliable memory technology with a
long lifespan.
COMPARISON OF FLASH VS PROM AND
EPROM
Feature PROM EPROM FALSH MEMORY
PROGRMMABILITY Programmable once Multiple times Multiple times
Erasure Method Not erasable UV light erasable Electrical erasable
Reprogramming 1 times Limited(1000 to High(10000 to
cycles 10000) 100,000)
Data Retention Long term Long term Long term
Speed Slower read/write Slower read/write Faster read/write
Usage Permanent firmware Prototyping Data storage and
USB
Cost Low Moderate Moderate to high
Key Points

PROM is single-use, EPROM can be reused with UV erasure, and


Flash allows frequent reprogramming. PROM cannot be erased,
EPROM requires UV light, while Flash is electrically erasable.
Other ROMs
i. The EEPROM has a more complex cell structure than either
ROM or UV EPROM and because of its low density, the cost/bit
is higher than other ROMs.
ii. The UV EPROM is a high-density ,non-volatile memory and it
can be erased only by using ultraviolent light.
FEATURE FLASH MEMORY EEPROM UV EPROM

Erase Method Electrically, block Electrically, byte Ultraviolet light,


level level chip level
Access speed Faster Moderate Slower

Cost Lower Moderate Higher

Power Consumption Low Low High(requires


ultraviolet)

In
Summar
y and cost-effective, making it the go-to for most
 Flash memory is more versatile
modern storage applications.
FLASH MEMORY VS SRAM
Static Random-Access
Memory(SRAM)
• Type of Memory: Volatile Memory , meaning it loses
data when power is turned-off.
• Speed: Very fast, with quick access time and low latency ,
making it ideal for cache memory in CPUs.
• Density: Lower density because SRAM is basically a flip-flop
consisting of several transistors.
• Power Consumption: Requires constant power to
maintain the data , resulting high power consumption.
• Data Retention: Loses data once power is lost .
FLASH MEMORY
• Type of Memory: Non-volatile memory, meaning its retain data even
when the power is turned off.

• Speed: Generally slower than SRAM .


• Density: Higher density , allowing for more storage in smaller physical place.
• Power Consumption: Does not require constant power to maintain
data.

• Data Retention: Can retain data without using power.


FLASH MEMORY VS DRAM
What is
FLASH?
Flash is a type of non-volatile memory that consists
of one transistor.

What is DRAM?
Dynamic Random – access memory is a type of
volatile memory that stores data in one transistor and
a capacitor.
FLASH VS DRAM
• A flash memory consumes much less power and retains data even the power
is off. (Non- Volatile)
• DRAM consumes more power and loses data when the power is off. (Volatile)

• Flash does not need refreshing .


• DRAM need to be refreshed frequently.

• Flash permanently holds the data and files that the user needs to access.
• DRAM temporarily holds the data and instructions that the processor need to
run applications.

• Flash can stored more data than DRAM in the same physical space due to its
high density and scalability.

• Flash can be used as a hard disk replacement in many applications such as


USB drives.
• Backup storage such as hard disk must be used with a DRAM.
USB FLASH DRIVE
• A USB flash drive is a portable storage device that consists of
flash memory connected to a USB connector.
• It is typically small, comparable to the size of a cigarette
lighter and is powered by the computer when plugged into a
port on a personal computer.
• They can have a storage capacity range from 2 GB to 64 GB,
with newer models reaching up to 512 GB or 1TB.
• Flash memories are usually rewriteable, making it convenient
for storing and transferring files.
• Flash Memory: The primary storage component.
• Mass Memory Controller: Manages data flow between flash
memory and the USB interface.
• Crystal Oscillator: Provides the clock signal for synchronization.
• USB Connector: Connects the flash drive to the computer’s USB
port.
• Pin 1(+V): Provides 5V power to the USB device.
• Pin 2(Data+): Carries the positive half of the data signal.
• Pin 3(Data-): Carries the negative half of the data signal and USB
uses these two data pins(D+ and D-) to transfer the data
between devices and the host system.
• Pin 4(GND): Acts as the electrical ground connection.
• The USB flash drive uses a standard USB A-Type
connector for connection to the computers.
• Peripherals such as printers use the USB B-Type
connector, which has a different shape and physical pin
configuration.
THANK YOU

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