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1 - FD Function & DOS

The document classifies materials into conductors, insulators, and semiconductors based on their electrical conductivity and band gap values. It discusses band diagrams, the differences between direct and indirect bandgaps, and the determination of carrier concentrations in semiconductors using the Fermi-Dirac function and density of states. Additionally, it provides equations for calculating electron concentrations and density of states for different energy levels.

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彭瀚緯
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5 views14 pages

1 - FD Function & DOS

The document classifies materials into conductors, insulators, and semiconductors based on their electrical conductivity and band gap values. It discusses band diagrams, the differences between direct and indirect bandgaps, and the determination of carrier concentrations in semiconductors using the Fermi-Dirac function and density of states. Additionally, it provides equations for calculating electron concentrations and density of states for different energy levels.

Uploaded by

彭瀚緯
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Classifying Materials (Crystals)

• Conductors: the material allowing the flow of


charge (electrical current) in one or more
directions.
• Insulators: the material in which the electron
does not flow freely.
• Semiconductors: the material that has an
electrical conductivity value falling between that
of a conductor and an insulator. The conductivity
of the a semiconductor is determined by the
“band gap (Eg)”:

Conductor Semiconductor Insulator


Eg < 1 eV 1 eV < Eg < 6 eV Eg > 6 eV
Conduction
Band
Electron Energy

Eg Eg Eg

Valence
X Band
The Band Diagrams (E-K)
GaAs Si

The observations:
1. Direct bandgap vs. indirect bandgap
the wave vector (k vector) is the same for the highest states in the
valence band as for the lowest states in the conduction band.
2. The band structure is not symmetric about k = 0.

The Band Diagrams (E-X)


Semiconductor P-type N-type
1 eV < Eg < 6 eV
Conduction
Band

Eg
Valence
Band
Determining the carrier concentrations
(electrons & holes) in a semiconductor:

Electron Concentration (cm-3)

∞ E: electron energy
𝒏=∫ 𝒇 ( 𝑬 ) 𝑵 ( 𝑬 ) 𝒅𝑬
𝑬𝒄
Ec: the lower edge of
the conduction band
f(E) is the Fermi-Dirac function:
the probability that an energy state is
occupied by an electron.

N(E) is the density of states:


the number of electron states per unit
volume per unit energy. 3
4
The Fermi-Dirac distribution function

0K

50%

5
6
Determining the carrier concentrations
(electrons & holes) in a semiconductor:

Electron Concentration (cm-3)

∞ E: electron energy
𝒏=∫ 𝒇 ( 𝑬 ) 𝑵 ( 𝑬 ) 𝒅𝑬
𝑬𝒄
Ec: the lower edge of
the conduction band
f(E) is the Fermi-Dirac function:
the probability that an energy state is
occupied by an electron.

N(E) is the density of states (#/cm ·eV): 3

the number of electron states per unit


volume per unit energy. 7
N(E) is the density of states (#/cm ·eV):
3

the number of electron states


per unit volume
per unit energy.

Density of States
√ 2 𝑚
𝐷𝑂𝑆3 𝐷 ( 𝐸 )= 2 ( 2 ) √ 𝐸
∗ 3
2
𝜋 ℏ
∗
𝑚
𝐷𝑂𝑆2 𝐷 ( 𝐸 )= 2
𝜋ℏ

√
∗
1 𝑚
𝐷𝑂𝑆1 𝐷 ( 𝐸 )=
𝜋ℏ 2𝐸
𝐷𝑂𝑆0 𝐷 ( 𝐸 )=2 𝛿( 𝐸 − 𝐸0 )

8
固定座位數
(vacant states)

B1 2,486 個座
位
二樓 6,137 個座位
三樓 3,854 個座位

總計 12,477 個座位

9
10
11
𝑉 3
𝑛 ( 𝐸)= 2
𝑘
3𝜋

𝑝𝑒𝑟 𝑢𝑛𝑖𝑡 𝑣𝑜𝑙𝑢𝑚𝑒

𝑝𝑒𝑟 𝑖𝑛𝑡𝑒𝑟𝑣𝑎𝑙𝑜𝑓 𝑒𝑛𝑒𝑟𝑔𝑦

12
13
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