lecture 3 - Copy (2)
lecture 3 - Copy (2)
Electronic Devices
Ninth Edition
Floyd
Lecture 3
Dr. Mona Sayed
Electronics Engineering
Elements course
Diode Operation
Voltage-Current (V-I) Characteristics of
a Diode
Diode Models
Reference:
Electronic Devices by Floyd
Chapter 2
Diodes and Applications
Summary
Diodes
p n
Depletion
region
Summary
Diodes
Forward bias
V
+ F–
C
IF
–
R
+ VBIAS
Knee
+ – A B
VF
0
0 0.7 V
Summary
Forward bias
Forward bias
Like charges repel, the negative side of the bias-voltage source “pushes” the
free electrons, which are the majority carriers in the n region, toward the pn
junction. This flow of free electrons is called electron current.
The negative side of the source also provides a continuous flow of electrons
through the external connection (conductor) and into the n region.
The bias-voltage source imparts sufficient energy to the free electrons for
them to overcome the barrier potential of the depletion region and move on
through into the p region.
Once in the p region, these conduction electrons have lost enough energy to
immediately combine with holes in the valence band.
Unlike charges attract, the positive side of the bias-voltage source attracts the
valence electrons toward the left end of the p region.
Summary
Forward bias
A forward-biased diode
Summary
Reverse bias
I=0A
R
VBIAS
– +
IR
Summary
Reverse bias
Reverse bias
Because unlike charges attract, the positive side of the bias-voltage
source “pulls” the free electrons, which are the majority carriers in the n
region, away from the pn junction.
As the electrons flow toward the positive side of the voltage source,
additional positive ions are created. This results in a widening of the
depletion region and a depletion of majority carriers.
Reverse Current
Approximations
VR VF VR VF VR VF
0.7 V 0.7 V
IR IR IR
Example
3.3 kW
+
VBIAS 12 V
–
K
A
K A
K K
A A
K
K
A
Selected Key Terms