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Lecture-1 MOSFET Basics

The document discusses the basics of MOSFETs in microelectronic circuits, highlighting their advantages over BJTs, including smaller size, higher input impedance, faster switching speeds, and voltage-controlled operation. It explains the device structure and operation of MOSFETs, detailing how a channel for current flow is created through gate voltage and the significance of threshold voltage. The content emphasizes the scalability of MOSFET technology and its importance in future microelectronics advancements.

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adityagupta.ahd
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17 views8 pages

Lecture-1 MOSFET Basics

The document discusses the basics of MOSFETs in microelectronic circuits, highlighting their advantages over BJTs, including smaller size, higher input impedance, faster switching speeds, and voltage-controlled operation. It explains the device structure and operation of MOSFETs, detailing how a channel for current flow is created through gate voltage and the significance of threshold voltage. The content emphasizes the scalability of MOSFET technology and its importance in future microelectronics advancements.

Uploaded by

adityagupta.ahd
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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EEE F244 : Microelectronic Circuits

Instructor: Prof. Debasis Das

Lecture 1: Basics of MOSFET

Prof. Debasis Das EEE F244 - MICROELECTRONIC CIRCUITS


1
Introduction
Current Mirror

Microelectronic Circuits
● Amplifier BJT
● Switches
MOSFET

Prof. Debasis Das EEE F244 - MICROELECTRONIC CIRCUITS


2
Why MOSFET over BJT?
● Smaller Size and Higher Integration Density:
○ MOSFETs can be manufactured with much smaller dimensions.
○ This allows for a higher number of transistors to be packed into a given area of an integrated circuit (IC).
○ This is crucial for miniaturization and increasing the processing power of modern electronic devices.

● Higher Input Impedance:


○ MOSFETs require significantly less current to operate compared to BJTs.
○ This translates to lower power consumption and increased energy efficiency in circuits.
● Faster Switching Speeds:
○ MOSFETs exhibit faster switching times between on and off states.
○ This enables higher operating frequencies in digital circuits and communication systems.

● Voltage-Controlled Operation:
○ MOSFETs are controlled by the voltage applied to their gate.

● Scalability and Future of Microelectronics::


○ MOSFET technology has shown remarkable scalability over the years, allowing for continuous miniaturization
of electronic devices.
○ This trend is expected to continue, making MOSFETs the cornerstone of future advancements in
microelectronics.
Prof. Debasis Das EEE F244 - MICROELECTRONIC CIRCUITS
3
Device Structure Metal-Oxide Semiconductor Field Effect Transistor (MOSFET)

Prof. Debasis Das EEE F244 - MICROELECTRONIC CIRCUITS


4
Operation with no Gate Voltage

back-to-back diode exists in series


between drain and source.
● One diode is formed by the pn junction
between the n+ drain region and the p-type
substrate
● other diode is formed by the pn junction
between the p-type substrate and the n +
source region.

path between drain and source has a very


high resistance (of the order of 10 12 Ω )

Prof. Debasis Das EEE F244 - MICROELECTRONIC CIRCUITS


5
Creating a Channel for Current Flow

+ + + + +
- - - - -
+ + + + +
+ + + + +

+ + + + +

+ve gate voltage attracts e-s from n+ source and drain region

When sufficient number of electrons accumulate near the surface of the substrate under the gate, an n
region is created, connecting the source and drain - Induced n-type channel
Prof. Debasis Das EEE F244 - MICROELECTRONIC CIRCUITS
6
Creating a Channel for Current Flow

+ + + + +
Electric field - - - - - capacitor
+ + + + +
- - - - - - -

+ + + + +

The gate and the channel region of the MOSFET


form a parallel-plate capacitor, with the oxide
layer acting as the capacitor dielectric
Electric field controls the amount of
charge in the channel, and that determines the
The value of vgs at which a sufficient number of mobile channel conductivity
electrons accumulate in the channel to form a
conducting channel is called a Threshold voltage (Vt)

Prof. Debasis Das EEE F244 - MICROELECTRONIC CIRCUITS


7
Creating a Channel for Current Flow voltage across this parallel-plate capacitor, that is, the
voltage across the oxide, must exceed Vt for a channel
to form.

vDS = 0, voltage at every point along the channel is


zero, and the voltage across the oxide is uniform and
equal to vGS

Overdrive voltage

Magnitude of the electron charge in the channel

The value of vgs at which a sufficient number of mobile


electrons accumulate in the channel to form a
conducting channel is called a Threshold voltage (Vt) unit =F/m2

Prof. Debasis Das EEE F244 - MICROELECTRONIC CIRCUITS


8

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