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Lecture 2 Microelectronics

The document covers the fundamentals of microelectronic devices and circuits, focusing on carrier mobility, transport mechanisms, and the physics of semiconductors, including the behavior of P-N junctions under different bias conditions. It discusses the properties affecting manufacturability, the structure and operation of diodes, and their various applications, such as rectification and voltage regulation. Additionally, it highlights the advantages and disadvantages of diodes in electronic circuits.

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Amoako Kingsley
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0% found this document useful (0 votes)
27 views51 pages

Lecture 2 Microelectronics

The document covers the fundamentals of microelectronic devices and circuits, focusing on carrier mobility, transport mechanisms, and the physics of semiconductors, including the behavior of P-N junctions under different bias conditions. It discusses the properties affecting manufacturability, the structure and operation of diodes, and their various applications, such as rectification and voltage regulation. Additionally, it highlights the advantages and disadvantages of diodes in electronic circuits.

Uploaded by

Amoako Kingsley
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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EE 371

MICROELECTRONIC DEVICES
AND CIRCUITS
❖carrier mobility and transport mechanisms
✔If a silicon block is n-type or p-type doped,
✔The zigzag motion of electrons or holes as a result of collision
defines Scattering
✔Scattering comes about due to imperfections in the crystal
caused by ionized impurities and vibrating atoms.



• The region where field increases but velocity remains constant
is the velocity saturation point.
• At the velocity saturation point, there is a high field transport
✔The ability of charge carriers (electrons and holes) to move
through the material under an electric field defines mobility.

✔High mobility is desired for faster devices. Eg High speed


photodetectors
• A silicon sample is doped with a donor concentration of
ND=1016 cm-3 . The sample has a measured resistivity (ρ) of 0.5
Ω⋅cm Assuming the mobility of holes (μp) is negligible compared
to the mobility of electrons (μn), calculate the electron mobility
(μn) in the sample.
• The charge of an electron (q) is 1.6×10 −19 C

Physics of Semiconductors
• If scattering is caused by ionized impurities
• When temperature is lowered, the electrons will possess low
energy.
• This low energy will not be able to overcome the periodic
potential introduced by the ionized impurities.
• Thus mobility will reduce with a decrease in temperature.
Physics of Semiconductors

❖Electric Current
✔Current is created is two ways;
1. Drift
2. Diffusion



Physics of Semiconductors

Physics of Semiconductors

Physics of Semiconductors
❖Diffusion current density
• Diffusion currents results due to a difference in concentration
gradient.
• Thus, electrons diffuse from a region of high concentration to a
region of low concentration.
Physics of Semiconductors

Physics of Semiconductors

Physics of Semiconductors

Physics of Semiconductors

Physics of Semiconductors
• TRY

coefficient of a semiconductor at T=300K is 215 𝑐𝑚2/ 𝑠.


1. Determine the electron mobility if the electron diffusion

2. What is the hole diffusion constant in a piece of silicon with μ p


= 410 cm2 V-1s-1
Physics of Semiconductors
❖P-N Junction
• If a part of a piece of silicon is doped n-type and the other part
is doped p-type, a boundary exist between the two sides/
regions.
• The boundary created is called the pn junction .
Physics of Semiconductors
• The n region has many free electrons(majority carriers) than
holes(minority carriers).

• Similarly, the P region has many holes (majority carriers) than


free electrons (minority carriers).

• The electrons in the n region are constantly moving about in all


direction.
Physics of Semiconductors
• A concentration gradient exist between the two regions.

• Electrons in the n region diffuse through the junction into the p


region.

• The electrons fill up holes in the p region.

• They leave behind a positive ion (ND+)


Physics of Semiconductors
• A negative ion is left in the p region when an electron fills its
hole(NA-).

• As soon as the ions are formed, a barrier potential (field) is


created.

• The field/barrier potential prevents further diffusion of holes/


electrons across the junction.
Physics of Semiconductors
• At that point, the region becomes depleted of free carrier
charges (electrons and holes) and the depletion region is
formed.

• The depletion region has many positive charges and many


negative charges on opposite sides of the pn junction.
Physics of Semiconductors
❖P-N juction in forward biase
• When a voltage is applied across pn semiconductive material,
the equilibrium state of the material gets distorted.
• Current begins to flow
Physics of Semiconductors
• When the positive voltage terminal is connected to the p region
of the semiconductor, the p region is said to have a higher
potential and the semiconductor is forward biased.

• In a forward biased diode, the holes from the p region are


repelled by the +ve terminal of the battery so they are driven
towards the junction.
Physics of Semiconductors
• Similarly, the electrons in the n region are repelled by the
negative terminal and are driven towards the junction

• This results in a narrow depletion region

• An increase in the applied voltage further shrinks the depletion


region.
Physics of Semiconductors
• When that happens the holes in the p region will get injected
into the n region and vice versa.

• This leads to current flow


Physics of Semiconductors
❖P-N juction in reversed bias
• When the negative voltage terminal is connected to the p region
of the semiconductor, the p region is said to have a lower
potential and the semiconductor is reverse biased.
• In a reverse biased diode, the holes from the p region are
attracted by the negative terminal of the battery so they are
driven away from the junction.
Physics of Semiconductors

Physics of Semiconductors
❖Applications of PN Junction
The concept of pn junction is used in
• LEDs
• Solar cells
• Photodetectors
❖Material Properties Afftecting Manufacturability
The properties of a semi conductor material influence its
manufacturability since it determines the performance, efficiency
and reliability of the final microelectronic component.

Significant among these properties are


a. Bandgap energy – determines the suitability of a semi
conductor material for certain applications
• Eg: Materials with high bandgap energy are better suited for
devices that require high power. (SiC)

• Ability to conduct electric current – materials with adjustable


conductivity (via doping)are easier to integrate into various
applications. (Si)

• Ability to conduct heat- crucial for power devices to dissipate


heat efficiently
• Mobility of electrons and holes – higher mobility are used for
high frequency devices. (GaAs)

• Arrangement of atoms in the semiconductor lattice- can


determine how easily the semiconductor can be fabricated into
high-performance devices.

• Distance between atoms in the crystal lattice – determine the


compatibility of a material with other materials
Microelectronic Device Design I
• Fundamentals of Diodes and Transistors
❖Diodes
✔A fundamental semiconductor device that allows current to flow
in one direction.

✔It is formed by joining p-type (positive) and n-type (negative)


semiconductor materials, creating a p-n junction.
❖Structure of a Diode

o P-Type Region
• Contains holes (positive charge carriers) as the majority
carriers.

• Formed by doping a semiconductor (e.g., silicon) with elements


like boron.
o N-Type Region:
• Contains electrons (negative charge carriers) as the majority
carriers.

• Formed by doping a semiconductor with elements like


phosphorus or arsenic.
o Depletion Region
• Formed at the junction of the p-type and n-type materials.

• Contains no free charge carriers because the electrons and


holes recombine near the interface, leaving behind charged
ions. This region acts as a barrier to current flow.
❖Operation of a diode
The behavior of a diode depends on the direction of the applied
voltage:
1. Forward Bias (Current Flows)
• The positive terminal of the voltage source is connected to the
p-type region, and the negative terminal is connected to the n-
type region.
• The external voltage reduces the width of the depletion region,
allowing charge carriers to cross the junction.

• Once the voltage exceeds a certain threshold (called the


forward voltage, typically ~0.7V for silicon and ~0.3V for
germanium), current flows through the diode.
2. Reverse Bias (No Current Flows)
• The positive terminal of the voltage source is connected to the
n-type region, and the negative terminal is connected to the p-
type region.

• The external voltage increases the width of the depletion region,


preventing charge carriers from crossing
• Only a very small leakage current flows due to minority
carriers.

• 3. Breakdown (Reverse Current Increases Dramatically)


• If the reverse voltage exceeds the breakdown voltage, the
diode allows a large current to flow. This is typically undesirable
unless the diode is designed for this purpose (e.g., Zener
diodes).
❖Types of Diodes
✔Standard Diode:
• Used for rectification (converting AC to DC).

✔Zener Diode:
• Operates in reverse bias and maintains a constant voltage
across its terminals when breakdown occurs.
✔Light-Emitting Diode (LED):
• Emits light when current flows through it in the forward direction.
❖Applications of Diodes
• Rectification:
• Converting AC to DC in power supplies.

• Voltage Regulation:
• Zener diodes are used to maintain a stable voltage.
• Signal Demodulation:
• Extracting information from modulated signals in radios and
TVs.

• Switching:
• Used in digital circuits and high-frequency applications.

• Light Emission:
• LEDs are used in displays, indicators, and lighting.
❖Advantages
• Simple construction.
• Small size and low cost.
• Wide range of applications.

❖Disadvantages
• Nonlinearity: Cannot conduct equally in both directions.
• Voltage drops reduce efficiency in some circuits.
• Sensitivity to temperature and excessive voltage.

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