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MAT1 Problem 2

The document discusses various concepts in Material Science related to Electrical Engineering, focusing on the Density of States (DOS) for free electrons in different dimensional k-spaces and the Fermi Distribution Function. It also addresses intrinsic carrier concentration, its dependence on temperature and band gap, and its significance for semiconductor conductivity. The content is part of a final exam for an MSc in Electronics Engineering.

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13 views12 pages

MAT1 Problem 2

The document discusses various concepts in Material Science related to Electrical Engineering, focusing on the Density of States (DOS) for free electrons in different dimensional k-spaces and the Fermi Distribution Function. It also addresses intrinsic carrier concentration, its dependence on temperature and band gap, and its significance for semiconductor conductivity. The content is part of a final exam for an MSc in Electronics Engineering.

Uploaded by

tauqeer544gmailcom
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Material Science in Electrical Engineering

Problem 2

23 Jan 2023

MSc Electronics - Engineering 1


Problem 2

Statement

Final exam 2/8


Material Science
Problem 2

Density of States

Number of allowed energy states per unit energy per unit volume

1 𝑑𝑁
𝐷𝑂𝑆= ( )
𝑉 𝑑𝐸

For a free electron in a 3-Dimensional k-space (Bulk Systems) DOS is


given as
𝐷𝑂𝑆=
1
( )2𝑚
2∗ 𝑝𝑖 2 ħ 2
∗√𝐸

Final exam 3/8

Material Science
Problem 2

Density of States

Density of states for a free electron in 2-


Dimensional (Quantum Well) k-space is
defined as
𝐷𝑂𝑆= ( 𝑚
𝑝𝑖 ∗ ħ 2 )
Density of states for a free electron in 1-
Dimensional k-space is defined as

𝐷𝑂𝑆=
√
2∗ 𝑚 ( 𝑑 √ 𝐸)
ħ 𝑑𝐸

Final exam 3/8

Material Science
Problem 2

Fermi Distribution Function

Fermi distribution function tells us probability of occupied energy


states

1
𝐹 ( 𝐸 , 𝐸 𝐹 , 𝑇 )=
𝐸 − 𝐸𝐹
1+exp ⁡( )
𝑘𝑇

Final exam 3/8

Material Science
Problem 2

Origin of Intrinsic Carrier


Concentration

Final exam 3/8

Material Science
Problem 2

Band Diagram and Rise in


Temperature

Final exam 3/8

Material Science
Problem 2

Carrier Concentration and


Temperature

Intrinsic carrier concentration tells us about the conductivity of the


semiconductor material i.e., how much current we can get through the material.
This value is known for every material.

It depends on upon the Band gap of the material and temperature.

Final exam 3/8

Material Science
Problem 2

Carrier Concentration with Band Gap and


Temperature

Carrier Concentration increases with increase in temperature and


decreases with increase in band gap.

Final exam 3/8

Material Science
Problem 2

Calculate Carrier Concentration

Final exam 20 Jan 2022 3/8

Material Science
Problem 2

Calculate Carrier Concentration

Final exam

Material Science
Problem 2

Thank you

Final exam 23 Jan 2023 9


Material Science

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