Cmos Process
Cmos Process
drain d d
OFF
d
nMOS g ON
s s s
d d d
pMOS g OFF
ON
s s s
0: Introduction Slide 15
CMOS Inverter
A Y VDD
0
1
A Y
A Y
GND
0: Introduction Slide 16
CMOS Inverter
A Y VDD
0
1 0 OFF
A=1 Y=0
ON
A Y
GND
0: Introduction Slide 17
CMOS Inverter
A Y VDD
0 1
1 0 ON
A=0 Y=1
OFF
A Y
GND
0: Introduction Slide 18
CMOS NAND Gate
A B Y
0 0
0 1 Y
1 0
A
1 1
B
0: Introduction Slide 19
CMOS NAND Gate
A B Y
0 0 1 ON ON
0 1 Y=1
A=0
1 0 OFF
1 1
B=0
OFF
0: Introduction Slide 20
CMOS NAND Gate
A B Y
0 0 1 OFF ON
0 1 1 Y=1
A=0
1 0 OFF
1 1
B=1
ON
0: Introduction Slide 21
CMOS NAND Gate
A B Y
0 0 1 ON OFF
0 1 1 Y=1
A=1
1 0 1 ON
1 1
B=0
OFF
0: Introduction Slide 22
CMOS NAND Gate
A B Y
0 0 1 OFF OFF
0 1 1 Y=0
A=1
1 0 1 ON
1 1 0
B=1
ON
0: Introduction Slide 23
CMOS NOR Gate
A B Y
0 0 1 A
0 1 0
1 0 0 B
1 1 0 Y
0: Introduction Slide 24
3-input NAND Gate
• Y pulls low if ALL inputs are 1
• Y pulls high if ANY input is 0
Y
A
B
C
0: Introduction Slide 25
Layout
• Chips are specified with set of masks
• Minimum dimensions of masks determine
transistor size (and hence speed, cost, and
power)
• Feature size f = distance between source and
drain
– Set by minimum width of polysilicon
• Feature size improves 30% every 3 years or so
• Normalize for feature size when describing
design rules 0: Introduction Slide 26
Simplified Design Rules
• Conservative rules to get you started
0: Introduction Slide 27
Inverter Layout
• Transistor dimensions specified as Width /
Length
– Minimum size is 4l / 2l, sometimes called 1 unit
– In f = 0.6 mm process, this is 1.2 mm wide, 0.6 mm
long
0: Introduction Slide 28
Summary
• MOS Transistors are stack of gate, oxide,
silicon
• Can be viewed as electrically controlled
switches
• Build logic gates out of switches
• Draw masks to specify layout of transistors