Intrinsic Semiconductor.

Extrinsic Semiconductor.

Master: the Green hydrogen energy vector

Pr. BENHAMIDA Mohamed
TYPES OF SEMICONDUCTOR:
INTRINSIC SEMICONDUCTOR:
 INTRINSIC SEMICONDUCTOR:

Intrinsic semiconductor is a chemically pure semiconductor at

room temperature . It is not doped or impurity is not added.
Pure silicon(Si) and Germanium(Ge) are the example for
intrinsic semiconductors. Its conductivity is very low at room
temperature. The silicon and germanium have four valence
electrons, to stabilize they share the valence electrons thus
forming covalent bond. When the temperature is increased the
covalent bond starts breaking and the valence electrons
become free and start to move leaving a hole in the valence
band. Thus the conductivity increases as the temperature is
increased. The number of free electrons is equal to the
number of holes formed in intrinsic semiconductor.
 INTRINSIC SEMICONDUCTOR:
An extremely pure semiconductor is called Intrinsic Semiconductor.
On the basis of the energy band phenomenon, an intrinsic
semiconductor at absolute zero temperature is shown below:
 INTRINSIC SEMICONDUCTOR:
Its valence band is completely filled and the conduction band is
completely empty. When the temperature is raised and some heat
energy is supplied to it, some of the valence electrons are lifted to
conduction band leaving behind holes in the valence band as
shown below:
 INTRINSIC SEMICONDUCTOR:

The electrons reaching at the conduction band move randomly. The

holes created in the crystal also free to move anywhere. This
behavior of the semiconductor shows that they have a negative
temperature coefficient of resistance.
This means that with the increase in temperature, the resistivity of
the material decreases and the conductivity increases.
INTRINSIC SEMICONDUCTOR:
INTRINSIC SEMICONDUCTOR:
INTRINSIC SEMICONDUCTOR:
INTRINSIC SEMICONDUCTOR:
 INTRINSIC SEMICONDUCTOR:
THE DIFFERENCE OF
INTRINSIC SEMICONDUCTOR EXTRINSIC SEMICONDUCTOR

 It is pure elements  It is impure elements.

like Ge and Silicon.  Ne ≠ N h
 Ne = N h  High conductivity
 Low conductivity  Conductivity depends
 Conductivity mainly on the temperature as
depend on their well as the amount of
temperature. impurity added in
them.
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
EXTRINSIC SEMICONDUCTOR:
 INTRINSIC SEMICONDUCTOR:
THE DIFFERENCE OF
INTRINSIC SEMICONDUCTOR EXTRINSIC SEMICONDUCTOR

 It is pure elements  It is impure elements.

like Ge and Silicon.  Ne ≠ N h
 Ne = N h  High conductivity
 Low conductivity  Conductivity depends
 Conductivity mainly on the temperature as
depend on their well as the amount of
temperature. impurity added in
them.
P. N. JUNCTION DIODES
 The PN Junction
Steady State
Metallurgical
Na Junction Nd

- - - - - + + + + When no external source

P - - - - -
+
+ + + + n
is connected to the pn
- - - - -
+
+ + + +
junction, diffusion and
+ drift balance each other
- - - Space
- +
- Charge+ + +
ionized Region + ionized out for both the holes and
acceptors
E-Field
donors
electrons
_ _
+ +
h+ drift == h+ diffusion e- diffusion ==e- drift

Space Charge Region: Also called the depletion region. This region
includes the net positively and negatively charged regions. The space
charge region does not have any free carriers. The width of the space
charge region is denoted by W in pn junction formula’s.

Metallurgical Junction: The interface where the p- and n-type materials

meet.
Na & Nd: Represent the amount of negative and positive doping in
number of carriers per centimeter cubed. Usually in the range of 1015 to
1020.
 The Biased PN Junction
Metal Contact
“Ohmic
Contact”
(Rs~0)
- +

P Applied n
Electric Field

I
_
+

Vapplied
The pn junction is considered biased when an external voltage is applied.
There are two types of biasing: Forward bias and Reverse bias.
These are described on then next slide.
Forward Bias: In forward bias the depletion region shrinks slightly in
width. With this shrinking the energy required for charge
Vapplied > 0
carriers to cross the depletion region decreases
exponentially. Therefore, as the applied voltage
increases, current starts to flow across the junction. The
barrier potential of the diode is the voltage at which
appreciable current starts to flow through the diode. The
barrier potential varies for different materials.

Reverse Bias: Under reverse bias the depletion region widens. This
causes the electric field produced by the ions to cancel
out the applied reverse bias voltage. A small leakage
Vapplied < 0
current, Is (saturation current) flows under reverse bias
conditions. This saturation current is made up of electron-
hole pairs being produced in the depletion region.
Saturation current is sometimes referred to as scale
current because of it’s relationship to junction
temperature.
 Properties of Diodes

I (mA)
• VD = Bias Voltage
D
• ID = Current through
Diode. ID is Negative
for Reverse Bias and
Positive for Forward
I Bias
VB S
~ V
• IS = Saturation
Current
R • VBR = Breakdown
V Voltage
• V = Barrier Potential
D
Voltage

(nA)
 Properties of Diodes
The Shockley Equation
• The transconductance curve on the previous slide is characterized by the
following equation:
I = I (e
D S
VD/VT
– 1)
• As described in the last slide, ID is the current through the diode, IS is the
saturation current and VD is the applied biasing voltage.
• VT is the thermal equivalent voltage and is approximately 26 mV at room
temperature. The equation to find VT at various temperatures is:
VT = kT
q
k = 1.38 x 10-23 J/K T = temperature in Kelvin q = 1.6 x 10 -19 C
•  is the emission coefficient for the diode. It is determined by the way the
diode is constructed. It somewhat varies with diode current. For a silicon
diode  is around 2 for low currents and goes down to about 1 at higher
currents
 Types of Diodes and Their Uses

PN Junction Are used to allow current to flow in one direction while

blocking current flow in the opposite direction. The pn
Diodes: junction diode is the typical diode that has been used
in the previous circuits.

A K P n

Representative Structure
Schematic Symbol for a
for a PN Junction Diode
PN Junction Diode

Zener Diodes: Are specifically designed to operate under reverse

breakdown conditions. These diodes have a very
accurate and specific reverse breakdown voltage.

A K

Schematic
Symbol for a
 Types of Diodes and Their
Uses
Light-Emitting Light-emitting diodes are designed with a very large
band gap so movement of carriers across their
Diodes: depletion region emits photons of light energy. Lower
band gap LEDs (Light-Emitting Diodes) emit infrared
radiation, while LEDs with higher band gap energy
emit visible light. Many stop lights are now starting to
use LEDs because they are extremely bright and last
longer than regular bulbs for a relatively low cost.

The arrows in the LED

A K
representation indicate
emitted light.
Schematic Symbol for a
Light-Emitting Diode
 Types of Diodes and Their
Uses
Photodiodes: While LEDs emit light, Photodiodes are sensitive to
received light. They are constructed so their pn
junction can be exposed to the outside through a clear
window or lens.
In Photoconductive mode the saturation current
A K increases in proportion to the intensity of the received
light. This type of diode is used in CD players.
In Photovoltaic mode, when the pn junction is exposed
to a certain wavelength of light, the diode generates
 voltage and can be used as an energy source. This
A K type of diode is used in the production of solar power.

Schematic Symbols
for Photodiodes