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ED - Final Lecture-1

electronic device lecture 1

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20 views16 pages

ED - Final Lecture-1

electronic device lecture 1

Uploaded by

arafat.jamil329
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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Electronic Devices

Final Term
Lecture - 01

Reference book:
Electronic Devices and Circuit Theory (Chapter-5)
Robert L. Boylestad and L. Nashelsky , (11th Edition)

Faculty of Engineering
American International University-Bangladesh
OBJECTIVES
• Become familiar with there , hybrid, and hybrid p models for the BJT transistor.

• Learn to use the equivalent model to find the important ac parameters for an amplifier.

• Understand the effects of a source resistance and load resistor on the overall gain and
characteristics of an amplifier.

• Become aware of the general ac characteristics of a variety of important BJT configurations.

• Begin to understand the advantages associated with the two-port systems approach to single-
and multistage amplifiers.

• Develop some skill in troubleshooting ac amplifier networks.

Faculty of Engineering
American International University-Bangladesh
BJT TRANSISTOR MODELING
• A model is an equivalent circuit that represents the AC characteristics of the
transistor.

• A model uses circuit elements that approximate the behavior of the transistor.

• There are two models commonly used in small signal AC analysis of a transistor:
• re model
• Hybrid equivalent model

Faculty of Engineering
American International University-Bangladesh
BJT TRANSISTOR MODELING
Capacitors chosen with very small
reactance at the frequency of
application → replaced by low-
resistance or short circuit.

Removal of the dc supply and insertion of


the short-circuit equivalent for the
capacitors.

Faculty of Engineering
American International University-Bangladesh
BJT TRANSISTOR MODELING

Circuit redrawn for small


signal ac analysis

Faculty of Engineering
American International University-Bangladesh
The re Transistor Model (Common Emitter Configuration)

Faculty of Engineering
American International University-Bangladesh
The re Transistor Model (Common Emitter Configuration)

Faculty of Engineering
American International University-Bangladesh
The re Transistor Model (Common Emitter Configuration)

Faculty of Engineering
American International University-Bangladesh
COMMON-BASE CONFIGURATION

Faculty of Engineering
American International University-Bangladesh
COMMON-BASE CONFIGURATION

equivalent circuit
Common Base re
The output resistance r0 is quite
high. typically extend into the
MΩ range.

Faculty of Engineering
American International University-Bangladesh
COMMON EMITTER FIXED BIAS CONFIGURATION

Faculty of Engineering
American International University-Bangladesh
COMMON EMITTER FIXED BIAS CONFIGURATION

Faculty of Engineering
American International University-Bangladesh
COMMON EMITTER FIXED BIAS CONFIGURATION

INPUT IMPEDANCE, Zi

β|

OUTPUT IMPEDANCE, Zo
VOLTAGE GAIN, Av
𝑽𝒊
) 𝑰𝒃=
β𝒓𝒆
|
=-,=-

Faculty of Engineering
American International University-Bangladesh
COMMON EMITTER FIXED BIAS PHASE RELATIONSHIP

=-

Demonstrating the 180°


phase shift between input
and output waveforms.

Faculty of Engineering
American International University-Bangladesh
EXAMPLE
• EXAMPLE 5.1: For the network of Fig. 5.25 :
• Determine re, Zi (with ro = ∞), Zo (with ro = ∞), Av (with ro = ∞) and Repeat with ro = 50 kΩ.

Faculty of Engineering
American International University-Bangladesh
End of
Lecture-1

Faculty of Engineering
American International University-Bangladesh
16

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