24EST114

Basics of Electronics Engineering.

2-0-0-2

1
 Module I Electronic Components
1.1 Application of Electronics in various fields.
1hr
1.2 Active and Passive components – Comparison.
Passive components: Resistors - Color coding and
applications. 1hr
1.3 Resistors:types, specifications, standard values. 1hr
1.4 Capacitors: types, specifications, color and number
coding, applications . 1hr
1.5 Inductors: types, specifications and applications. 1hr

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MODULE II: Semiconductors Physics

2.1 Semiconductors – Introduction. N and P type semiconductors

1hr
2.2 PN junction diode – Construction, working of PN junction
diode, VI characteristics 1hr
2.3 Bipolar Junction Transistor - PNP and NPN structures,
Principle of operation. 1
2.4 Input and Output characteristics of BJT (CE configuration). 1hr
2.5 Relation between current gains in CE, CB and CC
configuration . 1hr
2.6 MOSFET structure. Comparison of BJT and MOSFET. 1hr
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MODULE III: Basic Electronic Circuits

3.1 Power supply: Block diagram description of a dc power

supply.
1hr
3.2 Working of a full wave bridge rectifier, capacitor filter
(no analysis)
1hr
3.3 Voltage Regulators : Simple Zener Voltage Regulator 1hr
3.4 Amplifiers: Circuit diagram and working of common
emitter (RC coupled) amplifier with its frequency
response. 1hr
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 MODULE IV: Digital Logic And Instrumentation Systems

4.1 Introduction to Digital Logic: Decimal to binary conversion, Basic

logic gates with truth table 1hr
4.2 Universal Gates, implementation of logic function using gates.
1hr
4.3 Basics of PMMC meters - Voltage, Current and Resistance
measurement. 1hr
4.4 Digital multimeter-Block diagram and explanation 1hr
4.5 Digital Storage Oscilloscope – Block diagram and explanation
1hr

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 MODULE V: Electronic Sensors And Measurements

5.1 Sensors: Temperature sensors – Thermocouples and

Resistance Temperature Detectors. 1hr
5.2 Pressure sensors- Piezoelectric sensors, Strain gauge 1hr
5.3 Measurement of viscosity and flow of liquid. 1hr
5.4 Measurement of pressure of a liquid. 1hr

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 Course Outcomes
After the completion of the course the student will be able to

CO 1: Explain the different types and characteristics of passive components used

in electronic circuits. (Understand)

CO 2: Describe the structure and characteristics of basic semiconductor devices.

(Understand)

CO 3: Explain the working of a voltage amplifier and power supply. (Understand)

CO 4: Explain the working of an electronic measuring instruments. (Understand)

CO 5: Describe the sensors used for different applications. (Understand)

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 Basic of Electronics Engineering

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 Text Books

1. Robert L. Boylestad and Louis Nashelsky, Electronic

Devices and Circuit Theory, Pearson, 11th Ed., 2015.
2. N.N. Bhargava, D.C.Kulshreshtha, S. C. Gupta,
Basic Electronics and Linear circuits, Mc Graw Hill
Education, 2nd edition, 2017.
3. David A Bell, Electronic Devices & Circuits, Oxford, 5th
edition,2017.
4. Thomas L Floyd, “Digital Fundamentals”, Pearson, 2011
5. H S Kalsi’ “ Electronics Instrumentation”, Tata McGraw-
Hill, 2004.
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 Reference Books

1. Bernard Grob, “Basic Electronics”, Tata McGraw Hill, 2000

2. R P Jain, “Modern Digital Electronics”, Tata McGraw Hill,
2009
3. R K Rajput, “Electronic Instrumentation and Measurement”,
S Chand,2009
4. Introduction to Electronics, Coursera (MOOC)
https://www.coursera.org/learn/electronics

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 References

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 References

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What is Electronics?
Institution of Radio Engineers has defined
Electronics as ‘the field of science and
engineering, which deals with electron
devices and their utilization.’

 Electron devices are those devices where current flow is

due to the controlled flow of charge carriers through a gas,
a vacuum or a semiconductor.

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 Electronic Components and Devices

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 Module I
Application of Electronics

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 Evolution of Electronics

(Vacuum tubes to nano electronics)

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 Milestones in Electronics
1874 Braun invents the solid-state rectifier 1956 Bell laboratories developed Thyristor
(using point contact based on lead sulphide) (SCR)
1904 J A Fleming invented vacuum diode 1958 Integrated circuits developed by Kilby
1906 Le De Forest invents triode vacuum (TI) and Noyce and Moore (Fairchild
tube. Semiconductor)
1907-1927 First radio circuits developed from 1961 First commercial IC from Fairchild
diodes and triodes. Semiconductor
1925 Lilienfeld field-effect device patent 1963 IEEE formed from merger of IRE and
filed. AIEE
1927 Bell labs demonstrated first television. 1968 First commercial IC opamp
1947 Bardeen and Brattain at Bell 1970 One transistor DRAM cell invented by
Laboratories invent bipolar Dennard at IBM.
transistors.
1971 4004 Intel microprocessor introduced
1950 Demonstration of first colour television
(4 bit).
1952 Commercial bipolar transistor
production at Texas Instruments. 1974 8080 microprocessor
1956 John Bardeen, Walter Brattain, and introduced (8bit).
William Shockley receive Nobel prize. 1978 First commercial 1-kilobit memory.
1984 Megabit memory chip introduced.
1995 Gigabyte memory chip presented.
Now its decade dominated by i3, i5, i7, i9
multi core multi processors
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 History of Vacuum tubes
• Electronics began to evolve as a separate branch with
the invention of electron by the English Physicist
Joseph John Thomson in the late 19thcentury.

• It was announced during the course of his evening lecture to

the Royal Institution on Friday, April 30, 1897.

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 History of Vacuum tubes
Edison effect
American inventor Thomas Alva Edison
invented discharge of electricity from one
electrode to a positively charged electrode
under certain condition in 1883.

Works by Thomson and his students and the

English engineer John Ambrose Fleming
revealed that Edison effect was the result of
emission of electrons from the cathode, the
hot filament to the anode.

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John Ambrose Fleming
• 1849-1945
• Student of Maxwell
• Worked for Edison then Marconi
• Invented the Fleming Valve –
the first electronic rectifier or
diode (1904)

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The Fleming Valve

The valve used in a circuit

Early Fleming Valves

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 Lee De Forest

• 1873-1961

• Held 300+ patents

• 1906 - invented the Audion tube,

the first Triode vacuum tube.

• 1912 cascaded his tubes to increase amplification

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 Lee Dee Forest’s Triode ‘Valve’

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Later vacuum tubes

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 Evolution of Electronic Devices

A work of art from the Museum of Modern Art, Paris

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 Effects of vacuum tubes
Vacuum tubes permitted the development in

• Radio broadcasting,
• Long distance telephony,
• Television and
• The first electronic digital computer ENIAC
( Electronic Numerical Integrator and Calculator) in 1946.

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 Drawbacks
• Vacuum tubes are fragile
• They wear out in service
• Thermal fatigue
• Degradation of cathode by residual gases inside the tube.
• Warm up time

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 The Start of the Modern Electronics Era
It can be said that the invention of the transistor and the subsequent development of the
microelectronics have done more to shape the modern era than any other invention.

Bardeen, Shockley, and Brattain at Bell The first germanium bipolar transistor.
Labs - Brattain and Bardeen invented the
bipolar transistor in 1947.

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The early Ge transistors

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 Evolution of Electronic Devices

Vacuum Discrete
Tubes Transistors

SSI and MSI VLSI

Integrated Surface-Mount
Circuits Circuits

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 Classification of IC’s

 SSI – small scale integration (< 10 2) – 3sq.mm

 MSI – medium SI (102- 103) - 1970

 LSI – large SI (103- 104) – 1971 – first microprocessor by Intel Corporation

 VLSI – very large SI (104- 109) – microcontrollers

 ULSI & GSI– Ultra Large SI & Giga-scale integration

(> 109) -ATMs , point-of-sale terminals in retail stores,
automated factory assembly systems, office work stations.

Emperical Moores law – complexity of IC’s doubles in every 18-24 months

Size of a 64bit Intel Pentium IV processor 37.4mm x 37.4mm x 3mm

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Rapid Increase in Density of Microelectronics

Memory chip density versus time.

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 Device Feature Size
 Feature size reductions
enabled by process
innovations.

 Smaller features lead to more

transistors per unit area and
therefore higher density.

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 Optical Fibre Communcation
 An optical fibre is a glass or plastic fibre designed to
guide light along its length by total internal reflection.
 Employs photons instead of electrons

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 Light fountain
demonstrated
by Colladon

https://peakoptical.com/2017/11/short-history-fiber-optics/

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 Optical Fibre

1954: Narider Singh Kapani was the first to

transmit images through optical fibre which laid
the foundation for high speed internet technology.

1965: Kao and Hockham proposed fibers for

broadband communication.

1970s: Commercial methods of producing low-

loss fibers by Corning and AT&T.

1990: Single-mode fiber, capacity 622 Mbit/s

Now: capacity ~ Tbit/s, data rate- Gbit/s

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 Optical Fibres contd……
Made by drawing molten glass from a crucible.
Fibre manufacturing

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 Fibers open the flood gate
Bandwidth 100 THz would
allow 100 million channels
with 2Mbits/sec download
speed!
Each person in the U.S.
could have his own carrier
frequency,
e.g., 185,674,991,235,657 Hz.

However, we are using less than 1% of available bandwidth!

And maximum transmission speed is less than 0.00001 of
bandwidth.

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 Mechatronics
 Mechatronics, which is also called mechatronic
engineering, is a multidisciplinary branch of engineering
that focuses on the engineering of both electrical
and mechanical systems, and also includes a combination
of robotics, electronics, computer, telecommunication,
systems, control and product engineering.

 The word mechatronics originated in Japanese- English and

was created by Tetsuro Mori, an engineer of Yaskawa
Electric Corporation.

 The word mechatronics was registered as trademark by the

company in Japan.

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 Mechatronics contd…..
 An industrial robot is a prime
example of a mechatronics
system; it includes aspects of
electronics, mechanics, and
computing to do its day-to-day
jobs.
 French standard NFE 01-010
gives the following definition:
"approach aiming at the
synergistic integration of
mechanics, electronics,
control theory, and
computer science within
product design and
manufacturing, in order to
improve and/or optimize its
functionality".

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 Mechatronics

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 Superconducting Electronics
Superconductivity is the set of physical properties observed in certain
materials, wherein electrical resistance no longer exists and from
which magnetic flux fields are expelled. Any material exhibiting these
properties is a superconductor.

Unlike an ordinary metallic conductor, whose resistance decreases

gradually as its temperature is lowered even down to near absolute zero,
a superconductor has a characteristic critical temperature below which
the resistance drops abruptly to zero.

 The history of superconductivity began with Dutch Physicist

Heike Kamerlingh Onne's discovery of superconductivity in mercury
(at 4 Kelvin / -452 degreeF) in 1911.

An electric current through a loop of superconducting wire can persist

indefinitely with no power source.

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Superconductivity contd..
Superconductor material classes include
 Chemical elements (e.g. mercury or lead),

 Alloys (such as niobium-titanium, germanium-niobium,

and niobium nitride),

 Ceramics (YBCO and magnesium diboride),

 Superconducting pnictides (like fluorine-doped LaOFeAs )

or
 Organic superconductors(fullerenes and carbon nanotubes).
YBCO – Yttrium Barium Copper Oxide – a family of crystalline chemical compounds, famous for displaying high-temperature
superconductivity. LaOFeAs lanthanum oxide iron arsenide superconductor

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Superconductivity contd..
Some of the technological applications of superconductivity
include:
 the production of sensitive magnetometers based
on SQUIDs (superconducting quantum interference devices)
 fast digital circuits.
 powerful superconducting electromagnets used in maglev
trains, magnetic resonance imaging (MRI) and nuclear
magnetic resonance(NMR) machines, and the beam-steering
and focusing magnets used in particle accelerators for the
generation of high-energy X-rays and gamma rays.
 low-loss power cables.
 RF and microwave filters (e.g., for mobile phone base stations,
as well as military ultra-sensitive/selective receivers).
 electric motors and generators.

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 Nano Technology
 Nanotechnology is
science, engineering, and
technology conducted at
the nanoscale, which is
about 1 to 100
nanometers.
 Physicist Richard
Feynman, is the father of
nanotechnology.

Nanoscience and nanotechnology are the study and application of extremely

small things and can be used across all the other science fields, such as
chemistry, biology, physics, materials science, and engineering.

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 Nano Technology
 Nanotechnology is a field of research and innovation concerned with

building 'things' - generally, materials and devices - on the scale of atoms

and molecules.

 A nanometre is one-billionth of a metre: ten times the diameter of a

hydrogen atom. The diameter of a human hair is, on average, 80,000

nanometres.

 At such scales, the ordinary rules of physics and chemistry no longer

apply. For instance, materials' characteristics, such as their colour,

strength, conductivity and reactivity, can differ substantially between the

nanoscale and the macro.

 Carbon 'nanotubes' are 100 times stronger than steel but six times lighter.

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 Nano Technology contd…
 The ideas and concepts behind nanoscience and nanotechnology
started with a talk entitled “There’s plenty of Room at the Bottom”
by physicist Richard Feynman at an American Physical Society
meeting at the California Institute of Technology (CalTech) on
December 29, 1959, long before the term nanotechnology was used.
In his talk, Feynman described a process in which scientists would
be able to manipulate and control individual atoms and molecules.

 Over a decade later, in his explorations of ultraprecision

machining, Professor Norio Taniguchi coined the term
nanotechnology.

 It wasn't until 1981, with the development of the scanning

tunneling microscope that could "see" individual atoms, that
modern nanotechnology began.

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 Nanotechnology
Mideival Stained glass windows are examples of how nanotechnology was
used in the pre-modern era.

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 Nanotechnology contd…
The emergence of nanotechnology in the
1980s was caused by the convergence of
experimental advances such as the invention
of the scanning tunneling microscope
(STM) in 1981 and the discovery
of fullerenes in 1985.

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 Nanotechnology contd…

Gold atomic lattice Silicon image

A scanning tunneling microscope (STM) is an instrument for imaging surfaces at the
atomic level. Its development in 1981 earned its inventers, Gerd Binning and Heinrich
Rohrer, the Nobel Prize in Physics in 1986. For an STM, good resolution is considered to
be 0.1 nm lateral resolution and 0.01nm depth resolution.

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 Fullerenes
A fullerene is an allotrope of carbon whose molecule
consists of carbon atoms connected by single and
double bonds so as to form a closed or partially closed
mesh, with fused rings of five to seven atoms. The
molecule may be a hollow sphere, ellipsoid, tube, or
many other shapes and sizes. Graphene (isolated atomic
layers of graphite), which is a flat mesh of
regular hexagonal rings, can be seen as an extreme
member of the family.

Fullerenes had been predicted for some time, but only after their accidental synthesis in 1985
were they detected in nature and outer space. The discovery of fullerenes greatly expanded
the number of known allotropes of carbon, which had previously been limited to
graphite, diamond, and amorphous carbon such as soot and charcoal. They have been the
subject of intense research, both for their chemistry and for their technological applications,
especially in materials science, electronics, and nanotechnology.

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 Applications of fullerenes
•One of the most important uses
of Fullerene is in medicine.

•Fullerene are active molecules.

•Fullerene molecule can be used

as an antioxidant because it can
easily react with radicals due to
the high affinity of the electron.

•At the same time, Fullerene is

used as an anti-aging and anti-
damage agent in the cosmetic
sector.

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 Applications of fullerenes
• Fullerenes are used as antiviral agents. This use
is provided by its unique molecular structure,
antioxidant effect and biological compatibility.

• Some Fullerenes can form conjugates with

proteins and DNA. This situation is thought to
help the development of anti-cancer treatments.

• Fullerenes molecule can be used in drug delivery area. The surface

of Fullerene is covered with a chemotherapeutic agent. This agent
finds the cancer cell and is transported directly there.

• It has also been shown that the Fullerenes reagent forms a

protective layer on the DNA and extends the DNA life of the
endosomes.

• May be used for osteoporosis treatment because of its preferential

localization.
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 FinFET s
The basis for modern nanoelectronic
semiconductor device fabrication is
the FinFET (Fin field-effect transistor), an
evolution of the MOSFET transistor.

FinFET technology was pioneered by Digh

Hisamoto and his team of researchers
at Hitachi Central Research Laboratory in
1989.

In the late 1990s, Hisamoto's Japanese team

began collaborating with an international
team of researchers on further developing
FinFET technology,

In 1998, the team successfully fabricated

devices down to a 17 nm process.

They later developed a 15 nm FinFET

process in 2001, followed by a 10 nm
process the following year.

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 FinFETs
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-
oxide-semiconductor field-effect transistor) built on a substrate where the gate is
placed on two, three, or four sides of the channel or wrapped around the channel,
forming a double gate structure.

These devices have been given the generic name "finfets" because the source/drain
region forms fins on the silicon surface.

The FinFET devices have significantly faster switching times and higher current
density than the mainstream CMOS technology.

FinFET is a type of non-planar transistor, or "3D" transistor. It is the basis for

modern nanoelectronic semiconductor device fabrication.

Microchips utilizing FinFET gates first became commercialized in the first half of
the 2010s, and became the dominant gate design at 14 nm, 10 nm and 7 nm
process nodes.

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Frequencies of Some Common Signals
Audible sounds 20 Hz - 20 KHz
Baseband TV 0 - 4.5 MHz
FM Radio 88 - 108 MHz
Television (Channels 2-6) 54 - 88 MHz
Television (Channels 7-13) 174 - 216 MHz
Maritime and Govt. Comm. 216 - 450 MHz
Cell phones and other wireless 1710 - 2690 MHz
Satellite TV 3.7 - 4.2 GHz
Wireless Devices 5.0 - 5.5 GHz
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 Circuit Element Variations
All electronic components have manufacturing
tolerances.
 Resistors can be purchased with  10%,  5%, and
 1% tolerance. (IC resistors are often  10%.)
 Capacitors can have asymmetrical tolerances such as
+20%/-50%.
 Power supply voltages typically vary from 1% to 10%.
Device parameters will also vary with
temperature and age.
Circuits must be designed to accommodate these
variations.
We will use worst-case and Monte Carlo
(statistical) analysis to examine the effects of
component parameter
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variations.
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