Sensors and the Analog Interface

by Thomas Kuehl –
Senior applications engineer
Texas Instruments - Tucson

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 Sensors and the Analog Interface

Presentation subjects

• A measurement basis

• System attributes that may be monitored

Vref

• Sensor characteristics

+
VS1 2.5
R1 1k R2 1k
V-

-
Rg

• Analog interface R3 1k
ΔR RG 842

R4 1k
VB
Rg +
+
Ref
U2 INA126
V+ Vref

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A Measurement Basis

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 Measurement basis
Voltage divider used
Voltage Divider
as half-bridge circuit

Measurement Circuit may load Sensor Buffered Hi-Z input + Gain on Resistive Sensor

R3 100k R4 100k

R1 10k R1 10k IOP1

2.525V
-
2.500V
Vo
VA 5 VB VA 5 +
5.050V

R2 10k R2 10.2k
variable R
Resistive element
Sensor

VB = VA [R2 / (R1 + R2)] Vo = VA [(R2 / ( R1+ R2)) (1+ R4/R3 )]

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 Full-bridge Circuit
For Single Supply puts VB1 & VB2
at Vcm = ½ * VA implies “+/-” Differential Voltages
can be measured on Single Supply

Full Bridge

R2 10k
R1 10k R2 10k R1 10k
variable R Imon variable R
element VB1 VB2 element
VB1 VB2
VA 5 VA 5
Vo Vo

R3 10k R4 10k
R3 10k R4 10k

R1 x R4 = R3 x R2 (balanced condition) Redrawn in "H"

presentation
Vo = VB1 - VB2

Vo = VA [ R3 / (R1 + R3) - R4 / (R2 + R4) ] Wheatstone Bridge varies Impedance until Imon = 0

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 Measure small VDIF w/ large VCM

Four-resistor, difference amplifier Three op-amp, instrumentation amplifier

VCM = (Vin+ +Vin-)/2
VDIF/2 VDIF/2 3.0V VDIF = Vin+ - Vin-
Vin -
+ + +
+

Vin + Vin -
“Model” of real world inputs

VCM - R5 10k
IOP1
0.5V

+
R1 10k R2 10k
VDIF/2 R1 25k R3 10k
IOP3
- Vo
RG 12.5k
2.5V +

+
+
+

R2 25k R4 10k
R3 10k R4 10k
VCM VDIF/2
IOP1 0.5V IOP2
Vo - R6 10k

+
Vin +
Low Source Impedance
ref
2.0V

+
VS1 0

Silicon Ratio Match = 100dB

1% Discrete = 40dB Internal 4-resistor High Source Impedance
0.1% Discrete = 60dB difference amplifier

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 Temperature Monitoring
PR-100 (RTD)
• Current Excitation MTS102 (Diode)
• 0.00385  /  / °C • Current Excitation
• 200°C to 600°C •  2.26mV / °C @ VBE = 596mV
• ~ 300  Range • 55°C to 150°C
•  3 °C Accurate
• ~ 460mV Range

Thermocouple Pyroelectric Device

K-Type (TC) • No Excitation
• ~ 1V / °C
RL0503-5-820-97-MS
• No Excitation
• ~ 40V / °C • 20°C to 300°C (Thermistor)
• 0°C to 1250°C • ~ 320V Range • Current Excitation
• ~ 50mV Range • Can sense body • R @ 25 °C = 10k
heat from 50’ • Temp Co @ 25 °C = 4.4% / °C
• Material = MS97A
Silicon Thermometer • 75°C to 150°C
• ~ 9400  Range
Silicon
1N4148 Sensor • Internal Band gap Sensor
Signal • Analog, Digital, Duty Cycle Out
Conditioning • 55°C to 125°C
Circuit • 5.0°C Maximum Error

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 Temperature monitoring – RTD

Source: Advanced Thermal Products, Inc.

• RTD: resistance temperature device

• Linear resistance change with temperature Over Limited Temperature Range

• Positive temperature coefficient

• Wire-wound or thick film metal resistor
• Manufacturers: Advanced Thermal Products, U.S. Sensors, Sensing
Devices Inc.

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 RTD Advantages

• Accuracy available to +/-0.1°C

• High linearity over limited temperature range; ex. -

40°C to +85°C
• Wide temperature range: -250°C to 600°C (ASTM)
850°C (IEC)

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 RTD Disadvantages
Up to 10kΩ, Down to 10Ω available

• Limited resistance range 100Ω to 1kΩ (typically)

• Low sensitivity, about +0.4Ω/°C for a 100Ω Pt100 RTD

• Requires linearization for wide range; ex. -200°C to

+850°C
• Wire wound RTDs tend to be fragile

• Lead wire resistance may introduce significant errors

• Cost is high compared to a thermistor But Wider Temperature Range

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 Various Configurations
of RTD Elements

C C

A A A

PRTD PRTD PRTD

B B B

a.) Two-wire lead b.) Three-wire lead c.) Four-wire lead

configuration configuration configuration

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 RTDs Require
Current Excitation

Precision Current Source

< 1mA

VOUT
RTD, most popular element is
made using Platinum,
typically 100 @ 0 °C

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 Single-supply RTD solution
Pt100 RTD with INA326 (100V/V)

V+
2.9
REF200
Av = 2 ((R2 || R3) / RG) -40 to +85c
2.8

IS1 100u IS2 100u

2.7
Vtherm
to MUX input 2.6
U1 INA326 R4 100

Vtherm (V)
-
R1

RG 4k C3 1u
2.5

R1 +
+ 2.4
R2 R2 400k Pt100 RTD
RTD1 100 Linear (Pt100 RTD)
R1 100 V+ 2.3
+
R3 400k
C1 500p

Pt100
C2 100n

V+ 5 Vref 5 2.2

Reference or 2.1
+5V supply

2
-60 -40 -20 0 20 40 60 80 100

Temperature degrees (C)

INA326 is special SS Inst Vref scales Vtherm to • Single supply - mid scale centered at
Amp. Vcm can be close +/- around 2.5V to 2.5V
to either rail with High match ADS7870 • C1 and C3 combine to form a 2nd-
Differential Gain input. Instrumentation order, 1kHz LP filter
due to current mirror Amp  No Load on
topology Bridge • Very low non-linearity, about 1% or less

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 RTD linearization for
wide temperature ranges

For T< 0°C RT = Ro [ 1 + αT + βT2 + χT3(T-100)]

For T≥ 0°C RT = Ro [ 1 + αT + βT2]

where: RT = resistance at temperature T

Ro = nominal resistance of RTD
α, β, χ are constants used to scale the RTD
Coeff American DIN 43760 ITS-90

α 3.9692E-03 3.9080E-03 3.9848E-03 Linearity Improvement:

β -5.8495E-07 -5.8019E-07 -5.8700E-07 40:1 at mid point and end points
χ -4.2325E-12 -4.2735E-12 -4.0000E-12 20:1 at worst case residual error points

4-20mA transmitters with RTD Linearization, Matched Current Sources, Inst Amp:
XTR105, simple hardware linearization
XTR108, digital calibration, RTDs from 10Ω to 10kΩ (Voltage Output or Two Wire 4-20mA Transmitter)

14 of 56
 Temperature monitoring – thermistor

source: Selco source: Selco

• Thermistor – Thermally sensitive resistor

• Sintered metal oxide or passive semiconductor materials
• Suppliers – Selco, YSI, Alpha Sensors, Betatherm

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 Thermistor advantages

• Low cost option for less critical

applications
• Rugged construction
• Available in wide range of resistances:
100Ω to 40MΩ
• Available with negative (NTC) and
positive (PTC) temperature coefficients.
NTC is most common.
• Highly sensitive: -3.9% /°C to -6.4% /°C
for an NTC thermistor

16 of 56
 Thermistor Disadvantages

• Limited temperature range: -100°C to 200°C

• Highly non-linear response

• Linearization nearly always required

• 50 deg C range for 10-bit accuracy

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 Thermistor w/Constant Current Source

T 40

Thermistor biased by a
constant current source Wide temperature range
30
response -40 to +85C

Vtherm (V)
20

10
IS1 100u

0
Vtherm
-50 -20 10 40 70 100
Temperature (C)
NTC

T 6.00
Thermistor has
nominal 10k
NTC1 2322 640 63103 5.00
resistance at 25c Narrow temperature range
resonse -10 to +55C
4.00

Vtherm (V)
3.00

• Log function response 2.00

• Poor linearity beyond a 5 to 10°C range 1.00

0.00
-25 0 25 50 75
Temperature (C)

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 Shunt R Linearization

1.20

1.00

IS1 100u 0.80

Vtherm (V)
Vtherm 0.60
R1 10k

0.40
NTC

NTC1 2322 640 63103 0.20

0.00
-100 -50 0 50 100 150

Ambient Temperature (C)

• Much improved linearity with shunt resistance added (limited temp range)

• Non-linearity is under 3% for example when R-shunt equal to the thermistor at

the circuits median temperature
• Heavy shunting reduces output

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 Series R Linearization

2.5

2
+

VS1 2.5
R1 10k

1.5

Vtherm (V)
Vtherm

NTC1 2322 640 63103 1

NTC

0.5

0
-100 -50 0 50 100 150

Ambient Temperature (C)

• The voltage source and resistor are equivalent to a non-ideal current source
• Non-linearity is under 4% for this example when R-series equal to the thermistor at
the circuits median temperature
• Keep the bias current low to minimize self heating i.e. Pd less than 1/10 the power
rating

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 Thermistor Bridge using OPA131

Thermistor bridge circuit

using an OPA131 op-amp
3.0

2.5
Rntc 2322 633 53103

2.0
R4 2.5k
+

Vtherm (V)
R1 10k

NTC

1.5
Vref 2.5 V-

1.0
From ADS7870
-
Vtherm
BUFOUT
++ To LN# MUX Input 0.5
R2 12.5k

R3 12.5k

V+ U1 OPA131/BB
0.0
V- V+ 10 15 20 25 30 35 40
C2 100n C1 100n
Ambient Temperature (C)
R2 and R3 vakues selected
to keep Vterhm positive

V2 15 V1 15 • Circuit uses low cost op-amp and

PS decoupling capacitors are
mounted at device supply pins
minimum components
• Resistors are selected to set the
Vtherm = Vref { (-R4 / R1) + [R3 / (Rntc+R3)] [1 + R4(R1+R2) / (R1+R2)] } gain while keeping Vtherm positive
at the minimum temperature
• Non-linearity <3%, except end-
point <6%, of FSR
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 Thermistor Bridge Using INA114

Thermistor bridge circuit using an INA114

instrumentation amplifier (Av = 2V/V) 3.0

NTC1 2322 633 53103 2.5

V2 15
C2 100n
2.0
R1 10k

Vtherm (V)
NTC

1.5
- FB
Rg
RG 50k

Vtherm 1.0

Rg + U1 INA114 To LN# MUX Input

+
Ref
0.5
R2 10k

R3 10k

C1 100n
0.0
10 15 20 25 30 35 40
V3 15
Ambient Temperature (C)

• The INA provides gain and

+

Vref 2.5
From ADS7870 BUFOUT

establishes the mid-scale voltage

Av = ( 1 + 50kΩ / RG )
• Ratiometric capability
Ratiometric:
• RG can be set to adjust FS range
Gain and offset from bridge track.
Ref pin on INA114 causes Vtherm offset to track. • Non-linearity <4% of FSR
TINA Schematic

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 Diode sensor
Diode temp sensor circuit Si diode response with INA114 (Av = 20V/V)
INA114 G = 20V/V
4.000

V+
3.500 -10 to +55°C

3.000

REF200
V2 15
2.500

Vtherm (V)
IS1 100u IS2 100u C2 100n 2.000

1.500
VF1 - FB
Rg
Vtherm
RG 2.63k Si diode Linear (Si diode)
1.000
Rg + U1 INA114 To LN#
VF2 +
Ref
MUX input
Temperature 0.500
sense diode R1 4.87k
+

V+ Vref 2.5 0.000

D1 1N4001 -20 -10 0 10 20 30 40 50 60
V3 15 From ADS7870
C1 100n

BUFOUT
Temperature degrees (C)
P1 500

• Highly linear temperature response –

tenths of a degree
• The diode temperature coefficient is
Vtherm= [ ( VF1 - VF2 ) ( 1 + 50kΩ / RG ) ] + VREF
constant at ≈ -2.2mV/°C

Measures ΔT only unless calibrated • The useable temperature range is

to an absolute temp reference. approximately -55°C to about 175°C
TINA schematic

23 of 56
 Determining temperature using
2-current method
Single Diode Temperature Sensing Advantages
• Single diode improves accuracy
• no matching
VS1 5
+

Disadvantages
IS1 1m IS2 100u • Small voltage change in presence
of large diode voltage
• Switching circuit
10x 1x
SW1

Vtemp
T(°K) = ΔV∙q / N∙k∙ln(I1 / I2)
D1 1N4148

T(°C) = [ΔV (1.160e4) / 1.7∙ ln(I1 / I2)] -273°C

Current Ratios typically 10:1 or 100:1 Where: ΔV = (V1 –V2) at I1and I2 the 2 current levels
k = 1.3085e-23j /°K q = 1.6e-19C,
N = 1.7 for 1N4148

24 of 56
 Single diode Temp Sensor

Conceptual implementation of the

single-diode temp sensor
(using 2-current method)

V+

V2 15
U1 INA128  Current source switching is
required
-
IS1 900u Rg
Av 10V/V
RG 5.56k
Vtemp
IS2 100u Rg +  Diode forward voltage will be
R2 20k
+
Ref

1000uA V+
amplified by INA

SW1 100uA V1 15
VS2 0
 INA ref voltage can be adjusted
+

R1 10k D1 1N4148
Vtemp @ 27C
to match ADS mid-scale voltage
Sensor Diode
100uA 5.0621V
1.00mA 6.0746V  There is an easier way…

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 Dual Diode Temp Sensor Requires
matched diode
pair.<0.1%
T 1.25 Linearity.
Dual diode V+direct temperature sense circuit INA114 G = 10V/V
1.17

REF200
1.10

Vtherm (V)
IS1 100u IS2 100u
1.02
U2 INA114
V-
V- 950.00m
- FB
- Rg

+ RG 5.56k Vtemp 875.00m

+
Rg + To LN#
+
V+ Ref MUX input 800.00m
C4 10n U1 OPA237/BB -25 -15 -5 5 15 25 35 45 55 65 75 85
V+
R1 9k R2 1k + Temperature (C)
Vref 0

10x 1x
C2 10n C3 10n
V- V+
• Direct temperature (°C) measurement
D1 1N4148 D2 1N4148
• D1 and D2 should be a matched pair
V2 15 V3 15
Sense Sense
diode 1 diode 2 • 1N4148 switching diode is a good
choice for sense diodes

T(°C) = [((Vtemp / AV ) –VREF)(1.160e4)) / ((N)(ln (ID1/ID2)]- 273°C • Use Pspice diode models and check
temp performance with TINA
Emission coefficient: N = 1.7 for 1N4148

N also called “Ideality Factor”

26 of 56
 Texas Instruments Temp Sensors

TMP Sensors
• Diode temp sensors with built-
in A/D
• Resolution – programmable, 9
to 12-bit + sign bit
• Accuracy
– +/-1.5°C -25°C to +85°C
– +/-2.0°C -40°C to +125°C

• Digital output – SPI compatible

• 2.7V to 5.5V supply

TMP122
Direct Digital Interface
Silicon Temp Sensor

27 of 56
Air flow monitoring

28 of 56
 Air flow monitoring –
thermistor based
XTR101
Original Burr-Brown XTR
air flow sensor circuit
IS1 1m V+

Twisted pair

C2 10n
IS2 1m
4-20mA out
+ Iout
NTC1 2322 640 63102

Rs 100
C1 10n
Themistor
_
in static air
4-20mA Transmitter with
NTC
Matched Current Sources
Inst Amp
Air flow NTC

Current Output through

Thermistor
in air flow Resistor to Ground  SS
NTC2 2322 640 63102
ADC Input
P1 100

• Thermistor thermal resistance proportional to air flow rate

• P1 balances “zeros out” output with zero flow rate
• RS selected to provide desired output level

• RS selection depends on thermistor characteristics and air flow dynamics

Both Thermistors Mounted on an Isotherm 29 of 56

 Instrumentation Amplifier -
air flow sensor
a
T 2.00

Vref Vdelta A:(27; 0.00)

V1 15
1.00
Temp NTC1 = Temp NTC2
R1 1.05k R2 1.05k

Vdelta (V)
C1 100n
- FB
0.00
Rg To MUX input
R3 1k
NTC1 2322 640 63102
RG 50k Vflow
Themistor Rg + U1 INA114
+
in static air Ref
Vref C3 1u -1.00
NTC
V2 15 +
Vref 2.5
C2 100n

NTC
-2.00
Air flow
0 10 20 30 40 50 60 70
Thermistor
Temp Delta (C)
in air flow

NTC2 2322 640 63102 P1 100

• Similar to XTR101 function but

with voltage output
INA114 Vref pin • Temperature change is due to air
provides offset flow
scaling to match
ADS7870 input. • Direct interface to ADS7870 DAS

30 of 56
 Diode air flow sensor
a
T 1.75

Vflow A:(27.05; 1.25)

1.50

Vflow (V)
V+ Single 5V supply implementation
1.25
Temp D1 = Temp D2
U3 REF200

IS1 100u
IS2 100u 1.00
0.00 10.00 20.00 30.00 40.00 50.00 60.00 70.00
-
U2 INA326 To MUX input
R1 Temp D1 (C)
R5 1k Vflow
RG 50k

D2 1N4148
in static air
R1 +
+
R2 R4 200k C2 100n • D1 and D2 are in the same
V+
temperature environment
+
R3 200k

C3 10n V3 5
C1 500p

VS1 2.5
• D1’s junction temperature and
Air flow voltage are set by the air flow
D1 1N4148
in air flow path
• The air flow must be correlated to
the change in D1 voltage
• Temperature linearity within
tenths of a degree

Matched diodes required for accuracy 31 of 56

Humidity Monitoring

32 of 56
 Humidity monitoring
General Electric
Humidity sensor types HS12P, HS15P
• Resistive – ceramic
• Resistive – polymer
• Capacitive - ΔC
• Capacitive with built-in
electronics – V output Resistive
Polymer
Source: General Electric
Suppliers
• Resistive AC Excitation to prevent polarization
Humirel HS1100
– GE, ESI, Ohmic
• Capacitive AC Excitation to prevent polarization
– Humirel, ESI, Ohmic
• Capacitive with built-in Capacitive Sensor
electronics
– Honeywell, Ohmic Source: Humirel

33 of 56
 Resistive Humidity Sensors
Resistive type humidity sensor response
• Resistance changes in response 1000
ESI type: SRHR-233C

to water vapor level

T = 25°C

• Limited humidity range

Impedance - k Ohms
100

• Nearly log response

• High sensitivity at low humidity 10

Resistive type humidity sensor response 1

20 30 40 50 60 70 80 90 100
ESI type: SRHR-233C
1000 % - Relative Humidity

900
T = 25°C
800

700
Impedance - k Ohms

600
20% to 90% Humidity Levels
500
Porous resistive element traps
400
Hydrogen ions from H2O and lowers
300
resistance with increased humidity.
200

100

0
20 30 40 50 60 70 80 90 100
% - Relative Humidity
Source: ESI

34 of 56
 Resistive Humidity Sensor
Application
AC bridge amplifier Absolute value circuit 100 Hz 2-Pole Butterworth LPF

R2 4.29k 3.5V R7 1k

U1 INA163 C2 47n

+
R5 1k R6 1M
R4 10k V- D1 1N4148
VR1 5 - FB
C V-
DC 5V GS1
Vo1
V- B - Vout

RG 1M
3.5V Offset scales - R8 27.4k R9 196k
R1 65k Vo2 A C1 1u +
+

Vout for increasing GS2+

+
Ref +
+
D2 1N4148 V+
voltage with VG1 V+ V+
C3 10n

+
R3 65k V1 15 V2 15
increasing Humidity 1kHz Resistive Humidity U2 OPA132
V+ V-
U3 OPA132
10Vp-p Sensor
Sensor Resistance
A B C
T 5.00
Resistive Humidty Vout[4]: 650k[Ohm]
+1V -0.65V +1V
Circuit Output -1V +1.65V +1V
4.00

3.00
• An AC signal excites the sensor
Vout (V)

Vout[3]: 65k[Ohm]

2.00
• The sensor output is highly non-
Vout[2]: 6.5k[Ohm]
1.00
Vout[1]: 650[Ohm]
linear
0.00 • A log function may be applied to
0.00 5.00m 10.00m 15.00m 20.00m
Time (s) linearize the response

35 of 56
 Capacitive Humidity Sensors

• Useful range from 0 to 100% RH

• 100 - 500pF bulk capacity at 50% RH,
25°C

• For example, Humirel HS1100, 180pF

at 50% RH, 25°C

• Delta capacitance function

• 0.2 - 0.5pF for 1% RH change

• Low TC

• Moderate linearity

• Requires capacitance to voltage or

current conversion

Source: Humirel

36 of 56
 Capacitance-to-voltage conversion

Method for the capacitive sensors

Sensor Oscillator

C Sensor 180p

Phase/freq Low Pass Filter Gain Stage Vo

Capacitive Sensor
Comparator

Reference Oscillator

C Ref 180p

37 of 56
 Humidity monitoring – capacitive sensors
A capacitance to voltage conversion
Sensor Osc 2nd order 0.5dB
V+ 6.0 - 7.5kHz Chebyshev low-pass

C4 1u RA2 50k Frequency Lock Loop

U2 TLC555 R4 47k
C6 470n U7 OPA132
VCC
C3 100n RESET OUT
CONT
U3B SN74HC74 V- G=1 Diff Amp
THRES V+ V+ U6A SN74HC02 -
R3 909k U5A SN74HC04 V- U9 INA132
TRIGGNDDISC R5 2.7k R6 18k
D P Q +
+
- Sense
RB2 576k
C Q C5 68n V+
U4 SN74HC00
C7 470n Vo
C sens 180p Humirel HS1100 +
+
Sensor V- Ref
V+ V+

+
- V+ VS1 0
D P Q
R7 2.7k R8 18k
+
Ref Osc C Q
+
Midscale
V+ 6.67kHz
U5B SN74HC04 C8 68n V+ Adjust
U3A SN74HC74 U6B SN74HC02 U8 OPA132
C2 1u RA1 50k
U1 TLC555 V- V4 5 V1 5 V+
VCC
C1 100n RESET OUT
CONT R2 47k
C9 470n

C10 470n
THRES
R1 909k
TRIGGNDDISC

RB1 576k

C ref 180p
TINA Schematic

PWM Pulse Trains into U7 & U8. Csens=Cref  50% duty cycle on each 38 of 56
 Voltage output from C to V
Voltage output from C to V converter as Csense is varied +/-20pF

T 0.00

VF1 (C = 160p) -1.75

-3.50
0.00

VF1 (C = 180p)-2.50m Nearly zero when Cs are equal ≈ 125mV/pF∆

-5.00m
3.50

VF1 (C = 200pF) 1.75

0.00
0.0 5.0m 10.0m 15.0m 20.0m 25.0m
Time (s)

Δ Capacitance on Humidity Sensor = +/-20pF

Δ Vo = +/-2.5V
125mV/pF sensitivity

39 of 56
 Another C – V approach
R1 for DC Input Bias Path
T 30
Charge Amplifier Charge Amplifier
-3dB @ 143Hz
C1 = 1nF, C2 = 111pF, R1 = 10M
20

Gain (dB)
C2 111p
* 10

R1 10M 0
Capacitive 1 10 100 1k 10k 100k
Sensor V2 15 Frequency (Hz)

C1 1n 60
- 50
Vo1 40

Phase [deg]
+ 30
+ U1 OPA132
RL 20k
+

20
VG1 10
V1 15 0
-10
1 10 100 1k 10k 100k
* C2 111pF non-standard, 110pF ok Frequency (Hz)

f -3dB = 1 / (2π R1 C2)

Set : R1 ≥ 10 • | XC2 | and fGEN ≥ 10 (f -3dB)

Then: AV = 1 + (XC2 / XC1) where XC = 1 / (2π f C)

40 of 56
 Charge amplifier implementation
with capacitive humidity sensor

Charge Amplifier Absolute Value Circuit 100Hz, 4-th order, low-pass filter
(full-wave rectifier)
fexcite = 1kHz, Set Filter to 1/10 f excite100Hz
R6 10k

C2 180p
A R2 10k R3 10k B R4 5k R5 10k

R1 10M C6 1.5u
C4 470n
D2 1N4148
V- V-
Sensor V2 15 V-
D1 1N4148

Vabs
- Vout
V- V-
C1 180p -
- D - C - R7 2.05k R8 17.4k
R9 1.5k R10 16.5k
+
+
+
+
+ + + V+
+ + + C5 68n
V1 15
C3 150n V+
V+ V+
+

VG1
V+
f = 1kHz
U1 OPA132 U2 OPA132 U3 OPA132 U4 OPA132 U5 OPA132
V = 1Vpk

Vabs
A B C equation Vabs Filter Pro used to design filter
+1V -1V -1.65 Vabs = -A-2B +1V
-1V 0V +0.65 Vabs = -A* +1V
Op amp always in closed loop (D=0V)
*No current flow in D2
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 Single input charge amp circuit

Output voltage for +/-20pF capacitance change

T 2.00

Vout[3]: 200p[F]
1.50
• About 140mV Vout delta for a
+/-20pF change
Voltage (V)

Vout[2]: 180p[F]
1.00
Vout[1]: 160p[F] • 3.5mV/pF Sensitivity
500.00m • The DC voltage is 2x the Vin
RMS value
0.00
0 5m 10m 15m 20m 25m 30m 35m • The nominal DC level may be
Time (s)
an issue

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 Differential capacitance sensor amplifier

Charge Amplifiers INA154 Diff Amp, G=1, BW=3.1MHz

R1 10M INA132 Diff Amp, G= 1, BW=300kHz, µPower
C2 180p
Difference Amplifier Synchronous Demodulator 100 Hz 4-Pole Butterworth LPF
V-
C1 180p
- (difference amplifier connected
as switched G =2V/V amplifier)
+ V-
+ C5 470n
1kHz 10V p-p U1 OPA132
Sine Wave V+ - Sense
V- V-

- Sense - VLP1
+ R5 2.05k
VG1 V+ U3 INA154 R6 17.4k
+ R4 10k +
+
Ref +
U2 OPA132
+ U5 INA132 U6 OPA132
+ +
C3 180p V+ T1 2N7000 + V+
Ref C6 150n
-
U4 TLC339/5_1 V+
V- C7 1.5u
C4 180p
R3 2k
Sensor - V-
+ V3 5
R2 10M + -

R7 1.5k R8 16.5k Vout

V+ +
VLP1 +
(add hystereses V1 15 V2 15 U7 OPA132
to comparator) C8 68n V+
V- V+

Synchronous Demodulator:
Full-Wave Rectifies difference between Sensor Charge
Amplifier and Reference Charge Amplifier.

Differential Charge Amplifier Removes DC Level & Improves Sensitivity 43 of 56

 Differential Capacitance
Sense Amplifier
Output

Humidity Sensor Capacitance Min = 160pF (180pF-20pF)  Vout = -350mV

Humidity Sensor Capacitance Nominal = 180pF (180pF-20pF)  Vout = 0V
Humidity Sensor Capacitance Max = 200pF (180pF+20pF)  Vout =
+350mV
17.5mV/pF Sensitivity
T 400m

Vout[3]: 200p[F]

200m

Vout[2]: 180p[F]
Vout (V)

-200m
Vout[1]: 160p[F]

-400m
0 5m 10m 15m 20m 25m 30m
Time (s)

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Power Monitoring

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 Power monitoring - voltage
Voltage Monitoring
10:1 Resistive Dividers

10:1 with +/-1% resistors

1% Resistors
RA RB VB error error
(%) (%) (V) (mV) (%)
9.09k
R1 9k 0 0 2.500 0 0
8.91k
-1 -1 2.500 0 0
VA 25
VB -1 1 2.455 -45 -1.8

R2 1k
1.01k 1 -1 2.545 45 1.8
990 Ohm
1 1 2.500 0 0

0.1% Resistors 10:1 with +/-0.1% resistors

RA RB VB error error
(%) (%) (V) (mV) (%)
R1 9k 9.009k
8.991k 0 0 2.5000 0 0

VA 25 -0.1 -0.1 2.5000 0 0

VB
-0.1 0.1 2.4955 -4.5 -0.18
R2 1k
1.001k
0.1 -0.1 2.5045 4.5 0.18
999 Ohm
0.1 0.1 2.5000 0 0

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 Voltage Monitoring

INA143 Difference Amplifier

Voltage Monitor Circuit (G = 0.1V/V)

V1 15

2.5V
- Sense

VS/10

+ U1 INA143 • The INA143 provides an active 10:1

+
Ref Buffered voltage divider solution
R1 10k

Output
V2 15 • Note connections of inputs, sense and
ref pins
+

VS1 25
• The internal resistors are matched better
Supply Voltage
than 0.01%
• Worst-case errors total about 1.6mV for
the INA143 U-grade in this application

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 High-side Measurement
Current Shunt Monitor

Current shunt monitor concept

Rs 10m
• High-side CMV capability to
10A
IG1
supply rail
R1 5k

R2 5k

V1 60
LOAD • Very high common-mode
rejection amplifier
+

• A small differential voltage is

IOP1

developed in response to load

T1 !NPN current
Vo

RL 10k
• Monitor voltage (Vo) is
proportional to current
Vo = (Is) (Rs) (200uA/V) (RL)

High Side Level Shift from 60V to 2.5V

Vo scaled by RL relative to Gnd

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 Current Monitoring • Complete unipolar high-side current shunt
monitor
• Wide supply and common-mode range:
– INA138 2.7V to 36V
– INA168 2.7V to 60V
• Single gain set resistor
• Transconductance = 200uA/V
INA168 Current Shunt Monitor

Load current
Is triangle wave
R1 4m T 26.0
function

V1 5 IG1 (A) 25.0

IG1
Vin+ Vin-

V+ Out
U1 INA168 VF1 24.0
2.61
V2 5 R2 125k
GND

VF1 (V)2.51

2.41
0 5m 10m 15m 20m
Time (s)
For increased SNR:
Use differential input to ADS7870 with VF1 as one input, 2.5V Vref as other input.
Use internal PGA Gain to gain up differential input signal.

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 INA168 Current Shunt Monitor
T 100

INA168 Current Shunt Monitor IG1 (A) 50

100Amp Application

0
2.52
R6 5m

Equalize conductor area

R5 5m Monitor (V)
for each resistor path

R4 5m
0.00
IG1 0 5m 10m 15m 20m 25m
V1 5 R3 5m Load: 0-100A
Time (s)
step function
R1 5m

INA connects directly

across R terminations
• Paralleling resistors can be used
Vin+ Vin- Current monitor to output
V+ Out
ADS7870 Mux input to achieve very low values Rs
U1 INA168 VF1

V2 5
GND
R2 125k • Uses available 5mΩ resistors
• Keeping path Ωs equal and low
may be difficult

• Heat dissipation must be

accommodated

50 of 56
 INA168 Sense Resistor Requirements

INA168 Sense Resistor Requirements

Sense I (A) Vo Sense I (A) Vo

25 2.5 100 2.5

Sense V Sense R Pd Rl Sense V Sense R Pd Rl

mV Ω W k @2.5Vo mV Ω W k @2.5Vo

50 0.002 1.25 250.0 50 0.0005 5.00 1000.0

100 0.004 2.50 125.0 100 0.0010 10.00 500.0
150 0.006 3.75 83.3 150 0.0015 15.00 333.3
200 0.008 5.00 62.5 200 0.0020 20.00 250.0
250 0.010 6.25 50.0 250 0.0025 25.00 200.0
300 0.012 7.50 41.7 300 0.0030 30.00 166.7
350 0.014 8.75 35.7 350 0.0035 35.00 142.9
400 0.016 10.00 31.3 400 0.0040 40.00 125.0
450 0.018 11.25 27.8 450 0.0045 45.00 111.1
500 0.020 12.50 25.0 500 0.0050 50.00 100.0

Keeping Sense Voltage between 50mV and 100mV helps minimize Pd with good accuracy.
However, High Current Levels (100A) require very small values of Sense R.

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 INA21x – improving current-shunt monitor
performance
INA210 – INA214
• bidirectional, zero-drift
• -0.3V to +26V common-
mode voltage range
• ±35uV max. voltage offset
(INA210)
• ±1% max. gain error over
temperature
• Gains from 50V/V to
1000V/V
• High or low side
measurement

+/-1.5% Error with +/-10mV sense voltage  Smaller Rsense, Lower Rsense Pd

53 of 56
 INA21x – improving current-shunt monitor
performance
INA198 INA214

Gain 100V/V 100V/V

Offset (max) ±2mV ±60uV

Isense 20A 20A

Vsense 100mV 10mV

Rshunt 5mΩ 500uΩ

PRshunt 2W 0.2W

54 of 56
 Interface +/-10V sensor circuit to
0 to +5V input

INA159

U1 INA159
Sense
-

Vout
+/-10V
signals +
+
Ref 1 Ref 2
+

VG1
+

C1 100n Vref2 5

V1 5
Vo = Vin(0.2) + Vref(0.5)

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 In Summary

• Measurement basis
– measurement bridge and instrumentation amplifier
• Many system attributes can be monitored without excessive
cost
– power, temperature, humidity, air flow, etc.
• Understanding sensor characteristics
– response over range, output voltage or current, linearity,
etc.
• Analog interface
– instrumentation amplifiers, op-amps and current shunt
monitor ICs make the tasks easier

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