Chapter-4: Cache Memory...
Chapter-4: Cache Memory...
Characteristics Location Capacity Unit of transfer Access method Performance Physical type
External
Usually a block which is much larger than a word
Direct
Individual blocks have unique address Access is by jumping to vicinity plus sequential search Access time depends on location and previous location e.g. disk
External memory
- Off line storage
Transfer Rate
Rate at which data can be moved Tn =Ta + N/R Tn = Average time read or write N bits Ta = Average access time N = Number of bits R = Transfer rate, in bits per second (bps )
Magnetic
Disk & Tape
Optical
CD & DVD
Dynamic RAM Bits stored as charge in capacitors Charges leak Need refreshing even when powered Simpler construction Smaller per bit Less expensive Need refresh circuits Slower Main memory Essentially analogue
Level of charge determines value
DRAM Operation
Address line active when bit read or written
Transistor switch closed (current flows)
Write
Voltage to bit line
High for 1 low for 0
Read
Address line selected
transistor turns on
Static RAM Bits stored as on/off switches No charges to leak No refreshing needed when powered More complex construction Larger per bit More expensive Does not need refresh circuits Faster Cache Digital
Uses flip-flops
Static RAM Operation Transistor arrangement gives stable logic state State 1
C1 high, C2 low T1 T4 off, T2 T3 on
State 0
C2 high, C1 low T2 T3 off, T1 T4 on
Address line transistors T5 T6 is switch Write apply value to B & compliment to B Read value is on line B
Dynamic cell
Simpler to build, smaller Less expensive Needs refresh Larger memory units
Static
Faster Cache
Microprogramming (see later) Library subroutines Systems programs (BIOS) Function tables
Programmable (once)
PROM Needs special equipment to program
Read mostly
Erasable Programmable (EPROM)
Erased by UV
Flash memory
Erase whole memory electrically