Energy Band Gap

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STUDY OF ENERGY

BAND GAP OF
GERMANIUM DIODE
D O N E BY:
S H A RV
A U S A R KA R ( 7 6 2 9 )
S H R E YA S
G O N DA L ( 7 6 0 7 )
G A U RAV
PUROHIT(7618)
YA S H S H E N V I ( 7 6 2 3 )
INTRODUCTION TO ENERGY
BAND GAP
Definition of Energy Band Gap
The energy band gap is the energy difference between
the top of the valence band and the bottom of the
conduction band in a semiconductor. It represents the
minimum energy required to excite an electron from the
valence band to the conduction band.

Significance in Semiconductor Diodes


In semiconductor diodes, the energy band gap determines
the conductivity and electron behavior, affecting the
diode's ability to control current flow. Understanding and
controlling the energy band gap is crucial for optimizing
diode performance and efficiency and determining the
wavelength of light that can be absorbed or emitted by a
semiconductor, making it essential for applications such
as photodetectors, solar cells, and light-emitting diodes
(LEDs).
INTRODUCTION AND
CHARACTERISTICS OF DIODES
Basic Concept
Diodes are semiconductor devices that allow
current to flow in one direction only. They are
fundamental components in electronic circuits,
providing rectification and signal modulation. They
can be used for signal processing, voltage
regulation, and protection against reverse current.
Diodes operate by allowing current to pass when
forward biased and blocking current in the reverse
direction. This property is crucial for various
electronic applications.

Voltage-Current Relationship
The voltage-current relationship in diodes is
exponential. Small changes in voltage can lead to
significant changes in current flow, making them
versatile in circuit design.
CHARACTERISTICS OF DIODES

Reverse Bias Forward Bias


During reverse bias, diodes have a high In forward bias, diodes have a low resistance and
resistance and block the flow of current. This allow current to flow freely. This characteristic is
property is essential for preventing reverse crucial for conducting electricity in electronic
voltage damage. circuits.
AI
M
TO STUDY THE ENERGY
BAND GAP OF Ge
DIODE
W E W I L L A L S O L O O K AT S O M E O T H E R
TYPES IN BRIEF
APPARATUS
Germanium Diode – OA79
Voltmeter (0 – 10 Volts)
Ammeter (0 – 100uA)
Power Supply – DC voltage supply
Heater
Thermometer (-50°C - 100°C)
THEORY
A semiconductor, doped or intrinsic, always
possesses an energy gap between its
conduction and valence bands. For
conduction of electricity, a certain amount
of energy is to be given to the electron, so
that it goes from the valence band to the
conduction band. This energy needed is the
measure of the energy gap (E) between the
top of the valence band and the bottom of
the conduction band.
THEORY
Thermal Expansion: As temperature increases, the lattice
structure of the semiconductor expands. Leads to a reduction in
the overlap of atomic orbitals, decreasing the band gap. The
energy band gap typically decreases as temperature increases.
Electron-Phonon Interactions: Increased thermal energy causes
more interactions between electrons and lattice vibrations
(phonons).Increased Lattice Vibrations causes a decrease in the
potential energy barrier between the valence and conduction
bands.
PROCEDURE
1) Identify the anode-cathode of the given diode
using the multimeter.
2) Connect the circuit as Shown in the diagram.
3) The diode is kept inside a glass tube along with a
thermometer. The glass tube is Kept in water-bath so
that it can be heated.
4) Connect the Circuit. Place the diode in a Constant
temperature bath. observe the current (l) as the
reverse voltage(Vr) is increased from 0-5v, when
junction of Ge diode is at room temperature. If the
current attains constant value beyond the "Knee" is
equal to reverse saturation -Current (Is).
PROCEDURE
Repeat, the - procedure by increasing the
temperature of the junction by 5°c each time, till the
temperature is about 60°c.
5)Draw the reverse I-v characteristics of the diode at
all Temperature.
6) Plot a graph of log (Is/T^2) is proportional to 1/T
Determine its slope hence, calculate the value of Eg,
the energy band gap of the material of the diode.
CONNECTING THE CIRCUIT
OBSERVATIONS
V I (µA) at I (µA) at I (µA) at I (µA) at I (µA) at I (µA) at I (µA) at
(volts) 30°C 35°C 40°C 45°C 50°C 55°C 60°C

1 4 6 8 11 17 23 28

2 4 6 10 12 19 25 31

3 5 7 11 14 20 28 33

4 5 8 12 15 21 29 36

5 6 9 13 17 22 30 38
GRAPH OF I VS V

SCALE OF GRAPH
X-AXIS: 3CM = 1 VOLT
Y-AXIS: 1CM = 2 MICROAMPERES
OBSERVATIONS
Temp Temp (K) x= Is (µA) T^2 (K^2) log10 y=
(°C) 1/T(K^- (Is/T^2) log10
1) (Is) + 11

30 303 3.30x10^ 5 91809 -4.26392 6.7368


3
35 308 3.25x10^ 9 94864 -4.02286 6.92714
3
40 313 3.20x10^ 12.4 97469 -3.89767 7.10233
3
45 318 3.15x10^ 15 101124 -3.82876 7.17124
3
50 323 3.09x10^ 22 104324 -3.6693 7.3034
3
55 328 3.04x10^ 30 107584 -3.55463 7.44537
3
GRAPH
CALCULATION
𝐼𝑠 1
2.303 × 𝑘 × 𝑠𝑙𝑜𝑝𝑒 𝑜𝑓 𝑔𝑟𝑎𝑝h log 10 𝑣𝑠
𝑇
2
𝑇
eV
−5
2.303 × 8.62 × 10 × 2500

RESULT
Actual value of Eg for Germanium = 0.66 eV
Experimentally derived value of Eg for Germanium = 0.51629 eV
CONCLUSION

From the above observation we get to see that this


experiment successfully allows us to study the energy band gap of a
germanium diode. But we can still see that there is a discrepancy
between the actual value and the value we calculated. Thus we can say
that there are some sources of error such as least count of instruments,
human error, keeping the temperature constant, the internal resistance
of instruments and others.
From this we can conclude that the energy band gap decreases with
increase temperature thus allowing more current to pass as seen by the
increase in saturation current at higher temperatures.
EXAMPLES OF DIODES
1. Silicon (Si) –
Band gap: 1.1 eV at room temp
Applications: Widely used in integrated circuits, solar cells, and
various electronic devices.
2. Germanium (Ge) –
Band gap: 0.66 eV at room temp
Applications: Used in high-speed electronics and photodetectors.
3. Gallium Arsenide (GaAs) –
Band gap: 1.43 eV at room temp
Applications: Used in optoelectronic devices, such as LEDs, laser
diodes, and high-frequency microwave circuits.
PRACTICAL APPLICATION OF
DIODES
Semiconductors diodes can be used for various purposes such
as conversion of ac current to dc
current, voltage regulation, protection of circuits, temperature
measurements, etc.
Semiconductor Performance: Devices like diodes, transistors, and
solar cells are affected by the change in band gap with
temperature. Temperature Compensation: Design strategies are
required to stabilize performance over varying temperatures
Understanding the temperature dependence of the energy band
gap is crucial for designing and optimizing semiconductor devices.
The decrease in the band gap with increasing temperature
impacts the electrical and optical properties, necessitating careful
consideration in practical applications.
THANK YOU
For your patience

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