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Unit 4 TCAD

TCAD Process

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Amrita Rajesh
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20 views6 pages

Unit 4 TCAD

TCAD Process

Uploaded by

Amrita Rajesh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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Introduction of TCAD

(Technology Computer-Aided Design)


Physical modeling: definitions

Physical Modeling

Representation of the physical behavior of a system (device) by an abstract mathematical model which approximates this
behavior. Such a model may either be a closed-form expression (analytical model), or, in general, a system of coupled
(differential) equations to be solved numerically.

Analytical Modeling vs. Numerical Modeling

Analytical modeling basically means the representation of a physical property or law in terms of approximate closed-
form expressions using “lumped” parameters. It is also called “compact” modeling.

Numerical modeling: modeling of the device behavior through the numerical solution of the differential equations
describing the device physics on a given geometrical domain.

In the literature, the word “modeling” usually implies analytical/compact modeling, while “simulation” is much used for
numerical modeling
TCAD

Numerical simulation is much used to understand advanced device physics, for device design, scaling analyses & interaction
with process manufacturing.

TCAD stands for “Technology Computer-Aided Design” is one of a numerical modelling method for semiconductor devices.

TCAD is a branch of Electronic Design Automation (EDA) that models semiconductor fabrication and semiconductor device
operation. The modeling of the fabrication is termed Process TCAD, while the modeling of the device operation is termed Device
TCAD. The aim of TCAD is the design of semiconductor processes and devices to fulfill some given specifications.

Process TCAD:
modeling of semiconductor-chip process-manufacturing steps like lithography, deposition, etching, ion implantation, diffusion,
oxidation, silicidation, mechanical stress, etc.

It requires detailed modeling of the physical principles of manufacturing, and usually also the modeling of the specific
equipments used. Calibration of models needs expensive experiments (ad-hoc wafer fabrication, physical-chemical
investigations).

Device TCAD:
modeling of electrical, thermal, optical and mechanical behavior of semiconductor devices (e.g., diode, BJT, MOSFET, solar cell,
…).
It focuses on the physical principles at the basis of carrier transport and of optical generation in semiconductor devices. Models
are more easily generalized than for process physics. In addition, they do not need moving boundaries/moving meshes, as
instead process simulations need, i.e. convergence is in general easier. Calibration of models usually needs only electrical
characterization of fabricated samples.
Advantageous of TCAD

• The device features can be optimized if hands-on calculations are too complicated or impose
unacceptable assumptions

• It helps to make predictions (scaling, new device concepts) when hands-on calculations are not
viable (e.g., complex devices, modeling of distributed statistical effects or process yield).

• To get insights. No real experiment will probably be ever able to measure some of the physical
quantities calculated by TCAD tools (e.g., local distribution of carriers, local electric field, etc.).

• To quickly screen technological options and drive the industrial strategy

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