Module-5

POWER ELECTRONICS
SYSTEM
 Introduction
Thyristors :
• Static Anode-Cathode characteristics
• Gate characteristics of SCR.
• Turn-ON methods, Turn-OFF mechanisms.
• Natural and Forced Commutation – Class (A and Class B
types).
 THYRISTOR
• A thyristor is a four layer semiconductor device of PNPN
structure with three PN junctions.
• It has three terminal: anode, cathode and gate .
• Thyristors are typically used at the highest energy levels in
power conditioning circuits because they are designed to
handle the largest currents and voltages of any device
technology.
 THYRISTOR
Thyristor symbol & three p-n
junctions
 THYRISTOR Characteristics
• Static Anode- Cathode Characteristics of SCR
1 . Reverse Blocking Region
2 . Forward Blocking Region
3 . Forward Conduction Region
 THYRISTOR
• Circuit of Static Anode- Cathode Characteristics of SCR
 THYRISTOR
• Static Anode- Cathode Characteristics of SCR
 THYRISTOR
Static Anode- Cathode Characteristics of SCR
1. Reverse Blocking Region
• When the cathode is made positive with respect to anode
with the switch’s open, the thyristor becomes reverse biased.
• OP is the reverse blocking region . In this region, the thyristor
exhibits a blocking characteristics similar to that of a diode.
 Static Anode- Cathode Characteristics of
SCR
• In this reverse biased condition , the outer junction J1 and J3
are reverse biased and the middle junction J2 is forward
biased.
• Therefore , only a small leakage current (in mA) flows.
• If the reverse voltage is increased, then at a critical
breakdown level called reverse breakdown voltage VBR ,an
avalanche will occur at J1 and J3 increasing current simply.
Static Anode- Cathode Characteristics
of SCR
• If this current is not limited to safe value , power dissipation
will increase to a dangerous level that may destroy the device.
• Region PQ is the reverse avalanche region. If the reverse
voltage applied across the device is below this critical value,
the device will behaves as a high – impedance device in the
reverse direction.
 Static Anode- Cathode Characteristics of
SCR
2. Forward Blocking Region
• In region, the anode is made positive with respect to
cathode and therefore, junctions J1 and J3 are forward
biased while the junction J2 remains reverse biased.
• Hence the anode current is a small forward leakage current.
• The region OM of the V-I characteristics is known as the
forward blocking region when the device does not conduct.
 Static Anode- Cathode Characteristics of
SCR
3. Forward Conduction Region
• When the anode to cathode forward voltage is increased with
the gate circuit kept open, avalanche breakdown occurs at the
junction J2 at a critical forward break over voltage (VBO), and
the SCR switches into a low impedance condition.
• The forward break over voltage is corresponding to the
characteristic shows that as soon as the device latches on to
the conducting state.
 Static Anode- Cathode Characteristics of
SCR
• The region MN of the characteristic shows that as soon as the
device latches on to ON state, the voltage across the device
drops from several hundred volts to 1-2 Volts, depending on
the rating of SCR, and suddenly a very large amount of current
flows through the device,
• The part NK of the characteristic is called forward condition
state.
 Static Anode- Cathode Characteristics of
SCR

• The anode current must be more than a value known as

latching current IL, in order to maintain the required amount
of carrier flow across the junction; otherwise, the device will
revert to the blocking condition as the anode-to-cathode
voltage is reduced.
• Latching current IL is the minimum anode current required to
maintain the thyristor in the on-state.
Static Anode- Cathode Characteristics
of SCR
• Once a thyristor conducts, it behaves like a conducting diode
and there is no control over the device. The device will
continue to conduct because there is no depletion layer on
the junction J2 due to free movements of carriers.
• However, if the forward anode current is reduced below a
level known as the holding current IH , a depletion region will
develop around junction J2 due to the reduced number of
carrier and the thyristor will be in the blocking state.
 Static Anode- Cathode Characteristics of
SCR
• Holding current IH is the minimum anode current to maintain
the thyristor in the on-state. The holding current is less than
the latching current.
• The holding current is in the order of milli-amperes and is
less than the latching current IL
Two Transistor Model of an SCR

• The operation of an SCR can also be explained in a very

simple way by considering it in terms of two transistors. This
is known as the two transistor analogy of the SCR
Two Transistor Model of an SCR

Equivalent circuit for two transistor model

of an SCR
 Two Transistor Model of an SCR
• It is observed from the figure that the collector current of
transistor T1 becomes the base current of transistor T2 and
vice versa
Ic1=Ib2 and Ib1=Ic2
Also, Ik = Ia+Ig −−−−−−−−(1)
• Now, we have the relation from transistor analysis,
Ib1 = Ie1−Ic1 −−−−−−−−
−(2)
• Also , Ic1 = α1Ie1+Ico1 −−−−−−−−−(3)
 Two Transistor Model of an SCR
• where Ico1 is the leakage current of the reverse biased
junction J2 when the two outer layers are not present.
Substituting Eq. (3)in Eq. (2) we get
Ib1 = Ie1−α1Ie1−Ico1
Ib1=(1−α1)Ie1−Ico1
 Two Transistor Model of an SCR
• From Fig.1 it is evident that the anode current of the device
becomes the emitter current of transistor T1 that is
Ia = Ie1
Ib1=(1−α1)Ia−Ico1 ;
Ie1 is replace by Ia in above Eqn
∴ Also,
Ic2=α2Ie2+Ico2 −−−−−−−−(4)
 Two Transistor Model of an SCR
• The cathode current of the SCR becomes the emitter-current
of transistor T2 is given by,
∴Ik = Ie2
Ic2 = α2Ik+Ico2 −−−−−−−−−−−−(5)
But Ib1 = Ic2 −−−−−−−−−−−−(6)
• Substituting Eqs (4 and 5 in Eq. (6),
we get ,
(1−α1)Ia − Icol = α2Ik+Ico2 −−−−−−−−−−(7)
 Two Transistor Model of an SCR
• Substituting Eq. (1) in Eq. (7), we get
(1−α1)Ia−Ico1 =α2(Ia+Ig)+Ico2
(1−α1−α2) Ia = α2Ig+Ico2+Ico1
[1−(α1+α2)]Ia = α2Ig+Ico1+Ico2
Ia = α2Ig+Ico1+Ico2/[1−(α1+α2)] −−−−(8)
Assuming the leakage current of transistor T1 and T2 to be
negligible small, we have
Ia=α2Ig/1−(α1+α2)−−−−−−−−−−−−−(9)
 Two Transistor Model of an SCR
• From Eq. (9), it can be analysed that if (α1+α2)=1 , the value
of anode current Ia becomes infinite, that is, the anode
current suddenly attains a very high value, approaching
infinity.
• This characteristic of the device is known as its regenerative
action. This can also be stated as the gate current Ig is of such
a value that (α1+α2) approaches unity value, the device will
trigger.
 THYRISTOR TURN-ON
• A thyristor is turned on by increasing the anode current.
This can be accomplished in one of the following ways.
1. Forward Voltage triggering
When the anode to cathode forward voltage is increased with
gate circuit open reverse bias junction J2 will have an
avalanche breakdown at a voltage called forwarded
breakdown voltage VBO
 THYRISTOR TURN-ON
2. Thermal / Temperature Triggering
• If the temperature of a thyristor is high, there will be an
increase in the number of electron- hole pairs, which would
increase the leakage currents. This increase in currents
would cause a1 and a2 to increase.
• Due to the regenerative action (a1+a2 ) may tend to be
unity and the thyristor may turned-on. This type of turn-on
may cause thermal runaway and is normally avoided.
 THYRISTOR TURN-ON
3. Radiation Triggering (Light triggering):
• If light is allowed to strike the junctions of a thyristor, the
electron- hole pairs will increase and the thyristor may be
turned on.
• The light activated thyristors are turned on by allowing light to
strike the silicon wafers.
 THYRISTOR TURN-ON

4. dv/ dt Triggering
• From this equation noted that; if the rate of rise of the
anode- cathode voltage is high, the charging current of the
capacitive junction may be sufficient enough to turn on the
thyristor.
• A high value of charging current may damage the thyristor
and the device must be protected against high dv/dt. The
manufacturers specify the maximum allowable dv/dt of
thyristors
 Gate Characteristics of SCR

• D1- Serves to limit reverse voltage applied b/w anode and

gate
• D2- Prevent negative source current
• D3-Blocks positive gate current coming from supply when
device is forward biased
Gate Characteristics of SCR Gate circuit
parameters

SCR circuit for gate characteristics

 Gate Characteristics of SCR
• By using gate current of higher magnitude, it is ensured that
pulse width is sufficient to allow the anode current to exceed
the latching current.
• In practice , the gate pulse width is usually taken as equal to
or greater than SCR turn-on time, ton If T is the width then
T ≥ ton
 Gate Characteristics of SCR
• Width pulse firing , if the frequency of firing f is known, the
peak instantaneous gate power dissipation Pgmax can be
obtained as
Pgmax = VgIg = Pgam/f T
where,
f = 1/T = frequency of firing in Hz
T = pulse width in seconds
 Gate Characteristics of SCR

Pulse gatting
• A duty is defined as the periodic time of pulse.
Δ = T/T1= fT
Pgav/δ ≤ Pgmax
THYRISTOR TURN-ON
CHARACTERISTIC
 THYRISTOR TURN-ON
CHARACTERISTIC
• Delay Time (td )
This is time between the instant at which the gate current
reaches 90% of its final value and the instant at which anode
current reaches 10% of its final value.
• Rise Time (tr)
The time required for the anode current to rise from 10% of
on-state current (0.1IT ) to 90% of the on-state current (0.9IT )
 THYRISTOR TURN-ON
CHARACTERISTIC
• Spread Time (ts )
The time required for the forward blocking voltage to fall from
0.1 to its value to the on-stage voltage drop(1 to 1.5V)
• Turn-on Time (ton)
the sum of Delay time, rise time and spread time.
THYRISTOR TURN OFF
MECHANISM
 THYRISTOR TURN OFF
MECHANISM
• A thyristor which is in the on-state can be turned-off by
reducing the forward current to a level below the holding
current IH . There are various techniques for turning off a
thyristor.
• When an SCR is turned on by the gate signal, the gate loses
control over the device and the device can be brought back to
the blocking state only by reducing the forward current to a
level below that of the holding current.
 THYRISTOR TURN OFF
MECHANISM
• In AC circuits, however, the current goes through a natural
zero value and the device will automatically switch off.
• But in DC circuits, where no neutral zero value of current
exists, the forward current is reduced by applying a reverse
voltage across anode and cathode and thus forcing the
current through the SCR to zero.
 THYRISTOR TURN OFF METHODS
• Natural Commutation
When a positive cycle reaches to zero and the current is zero,
immediately a reverse voltage(negative cycle) is applied
across the thyristor which causes the thyristor to turn OFF.
This process is known as natural turn off method.
• This method is may used AC main supply voltages to
generated by local rotating machines
 THYRISTOR TURN OFF METHODS
• Forced Commutation
The forward anode current should be brought to zero for
sufficient time to allow the removal of charged carriers.
• The thyristor can be turned off by reverse biasing the SCR or
by using active or passive components. Thyristor current can
be reduced to a value below the value of holding current.
Since the thyristor is turned off forcibly it is termed as a
forced commutation process.
 Class A Commutation
• This is also known as Self Commutation by Resonating the
Load or simply the Resonant Commutation. In this
commutation, the source of commutation voltage is in the
load. The commutating components are L and C and the
Capacitor can be connected either in parallel or in series with
the load resistance RL .
Class A Commutation
 Class A Commutation
• The value of load resistance and the commutating
components are selected in such a way that they form an
under-damped RLC resonant circuit.
• When the circuit is applied with a DC Source, the forward
currents starts flowing through the SCR and during this
period, the capacitor is charged up to the value of Vdc.
• The current in the circuit will be either of the two waveforms
shown below, depending on how the load is connected to the
capacitor (parallel or series).
Class A Commutation
 Class A Commutation
• When conducting, the current in the SCR is the charging
current of the capacitor. From the waveforms, it is clear that
the current becomes zero at the point ‘K’. At this point, the
SCR turns OFF.
• The resonant frequency of the circuit, which depends on the
Commutation Components L and C and also on the load
resistance, determines the time for switching OFF the SCR.
 Class A Commutation
• Class A Commutation method is simple and reliable and is
usually used in high frequency operations i.e., frequencies in
the range of 1000 Hz and above due to the high values of L
and C components (as they carry the full load current).
• This type of commutation is generally used in Series Inverters.
 GATE TRIGGERING METHODS
The different methods of gate triggering are the
following:
1. R-triggering
2. RC triggering
3. UJT triggering
RESISTANCE TRIGGERING
 OPERATION
• As es goed positive, the SCR becomes forward biased from anode to
cathode; however, it will not conduct (eL =0) until its gate current
exceeds Ig(min)
• The positive es also forward biases the diode and the SCRs gate
cathode junction; this causes flow of a gate current ig
• Gate current will increase as es increases towards its peak value.
• When ig reaches a value equal to Ig(min) , the SCR turns ON and eL
will approximately equal es (refer to point P on the waveform)
• SCR remains ON and eL≈es until es decreases to the point where
the load current i s below the SCR holding current. This usually occurs
very close to the point until
es=0 and begins to go negative.
 OPERATION
• SCR now turns off and remains off while es goes negative since its
anode cathode is reverse biased and since the SCR is now an open
switch, the load voltage is zero during this period.
• Purpose of the diode in the gate circuit is to prevent the gate
cathode reverse bias from exceeding peak reverse gate voltage during
the negative half cycle of es.
• Diode is chosen to have peak reverse voltage rating greater than the
input voltage Emax.
• Load voltage waveform can be controlled by varying Rv which varies
the resistance in the gate circuit.
• If Rv is increased, the gate current will reach its trigger value Ig(min)
at a greater value of es making the SCR to trigger at latter point in the
es positive half cycle. The trigger angle will increase.
• If Rv is made large enough the SCR gate current will never reach
Ig(min) and the SCR will remain OFF. The minimum trigger angle is
obtained with Rv equal to zero.
• Limiting resistor Rmin is placed between anode and gate
so that the peak gate current of the thyristor Igm is not
exceeded.
• When supply voltage has reached its peak, Emax

Rmin ≥ Emax
Igm
• Stabilizing resistor Rb should have such a value that the
maximum voltage drop across it does not exceed
maximum possible gate voltage Vg(max)

Rb = (Rv + Rmin)Vg(max)
(Emax - Vg(max))
 Advantage

• R trigger circuit is that its simplest and

most economical.

Disadvantage

1. Trigger angle is greatly dependent on the SCR’s

Ig(min) , which depend on the type of SCR and high
temperature dependent.
2. Load voltage waveform can only varied from 0 to
90degree.
RESISTANCE CAPACITANCE FIRING
CIRCUIT
• By the RC network, a larger variation in the value of the
firing angle can be obtained by changing the phase and
amplitude of the gate current.
• By varying the resistor Rv , the firing angle can be
controlled from 0 to 180degree.
• In the negative half cycle, capacitor C charges through
diode D2 with lower plate positive to the peak to the
peak supply voltage Emax .
• Capacitor voltage remains constant at –Emax until
supply voltage attains zero value.
• As the SCR anode voltage passes through zero and
becomes positive, capacitor C begins to charge through
Rv from initial voltage –Emax.
• When the capacitor charges to positive voltage equal to
gate trigger voltage , the SCR is
triggered and after this, the capacitor holds to a small
positive voltage as shown below.
• During negative half cycle, the diode D1 prevents the
breakdown of the gate to cathode junction.
• Thus thyristor will turn ON when the capacitor
voltage , provided the gate current Ig(min)
is available.
Vs = (VG(min) + VD1)

• Maximum value of Rv is given by,

Rv ≤ Es - Vg(min) - VD
Ig(min)
RC Triggering Method
RC Full wave Triggering Circuit
RC Triggering Method
Unijunction transistor
Unijunction transistor
Unijunction transistor
V-I Characteristics of
UJT
•The voltage Vx Is the
reversed bias voltage and is
obtained by using voltage
divider rule.
Vx = ( R1 + RB1 )Edc / ( R1 +
RB1)+(R2+RB2 )

Here R1 & R2 much smaller

than RB1 & RB2
»Vx = RB1 Edc / RB1 + RB2

Vx = RB1 Edc / RBB

Vx = ηEdc
V-I Characteristics of
UJT
*The length of the one period T1 is the time it takes
for the capacitor to charge vp. Since the Discharge
time constant T2 is small, T=T1 & is given by

T = RC loge (Edc / Edc – Vp)

The time period of the wave is
We have Vp = ηEdc + VD independent of the supply voltage
Edc.

»T = RC loge (Edc / Edc – ηEdc – Vp)

T = RC loge (Edc / Edc(1 – η) – Vp)

If Edc > 10v, VD Is neglected......

» T = RC loge (1 /(1 – η))

The amplitude of the pulses is always less
than Vp. The voltage at B1 during UJT ‘off’
time is given by,

VB1 (off) = R1 Edc / R1+RBB +R2

Where RBB = RB1 + RB2

Frequency oscillation
The frequency of oscillations are controlled by
varying the charging time constant RC, The limits of R
is given by,

R min = Edc – Vv/Iv

R max = Edc- Vp/Ip

Advantages of UJT
• It is a low cost device.
• It has excellent characteristics.
• It is a low power abosrbing device under normal
operating conditions.
FOR MORE IMFORMATION CONTACT
NEELAPPA SIR
HOD OF EC DEPARTMENT

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