Introduction to Power

Electronics
Relationship of Power Electronics
 INTRODUCTION TO POWER
ELECTRONICS
Power Electronics is a field which combines Power (electric power), Electronics and
Control systems.
Power engineering deals with the static and rotating power equipment for the
generation, transmission and distribution of electric power.

Electronics deals with the study of solid state semiconductor power devices and
circuits for Power conversion to meet the desired control objectives (to control the
output voltage and output power).

Control deals with the static & dynamic characteristics of closed loop systems.

Power electronics may be defined as the subject of applications of solid state power
semiconductor devices (Thyristors) for the control and conversion of electric power.

Power electronics deals with the study and design of Thyristorised power
controllers for variety of application like Heat control, Light/Illumination control,
Motor control – AC/DC motor drives used in industries, High voltage power supplies,
Vehicle propulsion systems, High voltage direct current (HVDC) transmission.
 Definition of Power Electronics
• Power electronics is the application of solid-
state electronics for the control and
conversion of electric power.
• Power electronics relates to the control and
flow of electrical energy.
 Definition of Power Electronics

• To convert, i.e to process and control the flow of electric power

by supplying voltages and currents in a form that is optimally
suited for user loads.
 Power electronic interfaces
• Power electronic converters provide the necessary adaptation functions to integrate
all different microgrid components into a common system.
Interdisciplinary nature of Power Electronics
 POWER ELECTRONIC APPLICATIONS
 COMMERCIAL APPLICATIONS:
Heating Systems Ventilating, Air Conditioners, Central Refrigeration, Lighting, Computers and
Office equipments, Uninterruptible Power Supplies (UPS), Elevators, and Emergency Lamps.
 DOMESTIC APPLICATIONS
Cooking Equipments, Lighting, Heating, Air Conditioners, Refrigerators & Freezers, Personal
Computers, Entertainment Equipments, UPS.
 INDUSTRIAL APPLICATIONS
Pumps, compressors, blowers and fans. Machine tools, arc furnaces, induction furnaces, lighting
control circuits, industrial lasers, induction heating, welding equipments.
 AEROSPACE APPLICATIONS
Space shuttle power supply systems, satellite power systems, aircraft power systems.
 TELECOMMUNICATIONS
Battery chargers, power supplies (DC and UPS), mobile cell phone battery chargers.
 TRANSPORTATION
Traction control of electric vehicles, battery chargers for electric vehicles, electric locomotives,
street cars, trolley buses, automobile electronics including engine controls.
 UTILITY SYSTEMS
High voltage DC transmission (HVDC), static VAR compensation (SVC), Alternative energy sources
(wind, photovoltaic), fuel cells, energy storage systems, induced draft fans and boiler feed water
pumps.
Applications of Power Devices
 POWER ELECTRONIC SWITCHING DEVICES
1.Uncontrolled turn on and off (Power Diode)
2.Controlled turn on uncontrolled turn off (Thyristors)
3.Controlled turn on and off characteristic (Power Transistor, BJT,
MOSFET, GTO, IGBT)
4.Continuous gate signal requirement (BJT, MOSFET, IGBT)
5.Pulse gate requirement (SCR(Silicon-Controlled Rectifier) , GTO)
6.Bidirectional current capability (TRIAC)
7.Undirectionalcurrent capability (SCR, GTO, BJT, MOSFET, IGBT)
POWER ELECTRONIC SWITCHING DEVICES
Dept. Projects in Power Electronics

1 Applications of Power Electronics on Multilevel VSC

for AC Drive

2 TCA 785 Driver for DC Drive

3 Power amplifier design using Doherty approach

4 Voltage source convertor for AC motor

5 VSC controller for satcom

 POWER SEMICONDUCTOR DEVICES

The power semiconductor devices can be classified into three categories

according to their controllability
1. Uncontrolled turn-on & off devices (eg. diode)
2. Controlled turn-on & Uncontrolled turn off devices (eg. SCR)
3. Controlled turn-on & off devices (eg. BJT’s, MOSFET, GTO, IGBT, SIT’S,MCT’s)

The different power semiconductor devices which are commonly used in different
applications are as follows :
 Power Diodes.
 Power Transistors (BJT’s).
 Power MOSFETS.
 IGBT’s.(Insulated Gate Bilateral Transistors)
 Thyristors
 Thyristors
• The term thyristor is used to indicate a family of semiconductor devices used for
power control .

• A thyristor is a four layer, semiconductor of p-n-p-n structure with three p-n

junctions. It has three terminals, the anode, cathode and the gate.

• The word thyristor is coined from thyratron and transistor. It was invented in the
year 1957 at Bell Labs. The Different types of Thyristors are
- Silicon Controlled Rectifier (SCR).
- TRIAC
- DIAC
- Gate Turn Off Thyristor (GTO)
SILICON CONTROLLED RECTIFIER (SCR)
The SCR is a four layer three terminal device with junctions as
shown. The construction of SCR shows that the gate terminal is
Fig.: Symbol kept nearer the cathode. The approximate thickness of each
layer and doping densities are as indicated in the figure. In
terms of their lateral dimensions Thyristors are the largest
semiconductor devices made. A complete silicon wafer as large
as ten centimeter in diameter may be used to make a single
high power thyristor.
Symbol G a te C a tho de

n
+
10
19
cm
-3
n
+
10
19
cm
-3
 1 0 m


J3 - 17 -3
p 10 cm 3 0 - 1 00 m


J2
–
n 10
13
- 5 x 10
14
cm
-3 5 0 - 1 00 0 m

J1
p
+
10
17
cm
-3
 3 0 - 5 0 m
19 -3
p 10 cm

A no d e

Fig. Structure of generic thyristor

Construction of an SCR
Device Operation

Simplified model of a
thyristor
V-I Characteristics
Effects of gate current
Two Transistor Model of SCR


Two Transistor Model of SCR
The general transistor equations are,
I C  I B  1    I CBO
I C  I E  I CBO
I E I C  I B
I B I E 1     I CBO
Considering PNP transistor
of the equivalent circuit,
I E 1 I A , I C I C1 ,  1 ,
I CBO I CBO1 , I B I B1
 I B1 I A 1  1   I CBO1    1
Considering NPN transistor
of the equivalent circuit,
I C I C2 , I B I B2 , I E2 I K I A  I G
I C2  2 I k  I CBO2
I C2  2  I A  I G   I CBO2    2 
From the equivalent circuit,
we see that
 I C2 I B1
 2 I g  I CBO1  I CBO 2
 IA 
1  1   2 
Case 1: When I g 0
I CBO1  I CBO2
IA 
1  1   2 
Case 2: When I G 0
 2 I g  I CBO1  I CBO 2
IA 
1  1   2 
Gate Characteristics of SCR
 Dynamic Characteristics of SCR
• Turn ON Characteristics
• Turn OFF Characteristics
Turn ON
Characteristics
Turn OFF Characteristics