Lect 17
Lect 17
DESE
Lecture #17
Ec
Electron Eg Hole
EHP
Ev
At 0K At Temp > 0K
At the equilibrium
Recombination rate, ri = gi, Generation rate
(electron/cm3) n = p (hole / cm3) n(Si)=1010 EHP/cm3
Ec
Eg
Ea Ea
Ev
T = 0K T 300K
• Acceptor energy level is very close (energetically) to valence
band edge, Ex: Ea-Ev = 0.03 to 0.06 eV for Si
•Acceptance of a valence band electrons by an acceptor level and the
resulting creation of holes (partially empty band)
•Conduction of current is possible in a partially empty energy band,
but not in completely filled energy band
10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion L5-Slide 6
N-type semiconductor IIT Bombay
DESE
Si
N-type
Sb semiconductor
e-
Ec
Ed Ed
Ev
Eg
T = 0K T 300K
• Donor energy level is very close (energetically) to conduction
band edge, Ex: Ec-Ed = 0.03 to 0.06 eV for Si
ND - NA
ND
x
-NA
P-side N-side
Ec EF
Ei
EF
Ev
Fermi level
remains
EF Ec invariant at
Ei the
Ev equilibrium
10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion L12-Slide 9
IIT Bombay
Space charge region DESE
q ( p N d n N a )
Time, t=0 + - + - + - + - + - + - + - + -
+ - + - + - + - + - + - + - + -
Fixed charges - + - +
+ - + - + - + - + - + -
Mobile charges + - + - + - + - + - + - + - + -
N-side P-side
t>0 - +
+ - + - + - + - + - + - + -
+ - + - + - + - + - + - + -
+ - + - + - + - + - + - + -
+ - + - + - + - + - + - + -
10/17/24
Space charge region
Lecture 17: EN 601: Photovoltaic energy conversion L12-
Slide 10