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Lect 17

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Lect 17

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IIT Bombay

DESE

Photovoltaic energy conversion

Lecture #17

10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion Slide 1


IIT Bombay
Charge Carriers in Semiconductors DESE

• At 0K temperature Si behaves like an insulator due to empty


conduction band

•As the temperature rises above 0K, conduction band electrons


increases due to thermal excitation across the band gap

Ec

Electron Eg Hole
EHP
Ev

At 0K At Temp > 0K

10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion L5-Slide 2


Charge carriers IIT Bombay
DESE

• Empty state in VB is called a hole, contributes in the


process of conduction. A hole can be regarded as a free
particle with positive charge.
•Conduction band electron and corresponding valence
band hole is together known as electron-hole pair (EHP).
• Si atom density is about 5x1022 atoms/cm3 while at room
temperature there are about 1010 EHP/cm3.

• Two types of charge carriers: Holes and electrons


10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion L5-Slide 3
Intrinsic Semiconductor (Si) IIT Bombay
DESE

• Comment: Si is first purified to very high degree, 99.9999999%,


before making devices in it.
Si Intrinsic : when no
e-
impurities are
h+ added to the
material

At the equilibrium
Recombination rate, ri = gi, Generation rate
(electron/cm3) n = p (hole / cm3) n(Si)=1010 EHP/cm3

10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion L5-Slide 4


IIT Bombay
Extrinsic semiconductor DESE

•Extrinsic semiconductor: when desired impurities are added to


obtain the desired change in the conductivity
• The process of adding impurities to a semiconductor is called
Doping
Si
P-type
h+ semiconductor
Al

•Addition of impurities with three valence electrons results in available emp


energy state, a hole
• B, Al, In, Ga (Acceptor impurities)
•Holes are in the majority  majority carrier concentration
10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion L5-Slide 5
P-type semiconductor IIT Bombay
DESE

Ec
Eg
Ea Ea
Ev

T = 0K T  300K
• Acceptor energy level is very close (energetically) to valence
band edge, Ex: Ea-Ev = 0.03 to 0.06 eV for Si
•Acceptance of a valence band electrons by an acceptor level and the
resulting creation of holes (partially empty band)
•Conduction of current is possible in a partially empty energy band,
but not in completely filled energy band
10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion L5-Slide 6
N-type semiconductor IIT Bombay
DESE

Si
N-type
Sb semiconductor
e-

•Addition of impurities with five valence electrons results an extra


electron available current conduction
• P, As, Sb (donor impurities)
• Electron are in the majority  majority carrier concentration

10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion L6-Slide 7


N-type semiconductor IIT Bombay
DESE

Ec
Ed Ed

Ev

Eg
T = 0K T  300K
• Donor energy level is very close (energetically) to conduction
band edge, Ex: Ec-Ed = 0.03 to 0.06 eV for Si

• An electron at the donor level is excited to the conduction band


• In conduction band there are large number of energy levels are
available, electron can hop from one level to another
10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion L6-Slide 8
P-N junction energy bands IIT Bombay
DESE

ND - NA

ND

x
-NA
P-side N-side
Ec EF
Ei
EF
Ev
Fermi level
remains
EF Ec invariant at
Ei the
Ev equilibrium
10/17/24 Lecture 17: EN 601: Photovoltaic energy conversion L12-Slide 9
IIT Bombay
Space charge region DESE

 
 q ( p  N d  n  N a )
Time, t=0 + - + - + - + - + - + - + - + -
+ - + - + - + - + - + - + - + -
Fixed charges - + - +
+ - + - + - + - + - + -
Mobile charges + - + - + - + - + - + - + - + -

N-side P-side

t>0 - +
+ - + - + - + - + - + - + -
+ - + - + - + - + - + - + -
+ - + - + - + - + - + - + -
+ - + - + - + - + - + - + -

10/17/24
Space charge region
Lecture 17: EN 601: Photovoltaic energy conversion L12-
Slide 10

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