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Chapter 1

VLSI

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0% found this document useful (0 votes)
6 views

Chapter 1

VLSI

Uploaded by

Rehan Javed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
You are on page 1/ 51

Digital Integrated

Circuits
A Design Perspective
Jan M. Rabaey
Anantha Chandrakasan
Borivoje Nikolic

Introduction
July 30, 2002

1
© Digital
EE141 Integrated Circuits 2nd Introduction
What is this book all about?
 Introduction to digital integrated circuits.
 CMOS devices and manufacturing technology.
CMOS inverters and gates. Propagation delay,
noise margins, and power dissipation. Sequential
circuits. Arithmetic, interconnect, and memories.
Programmable logic arrays. Design
methodologies.
 What will you learn?
 Understanding, designing, and optimizing digital
circuits with respect to different quality metrics:
cost, speed, power dissipation, and reliability

2
© Digital
EE141 Integrated Circuits 2nd Introduction
Digital Integrated Circuits
 Introduction: Issues in digital design
 The CMOS inverter
 Combinational logic structures
 Sequential logic gates
 Design methodologies
 Interconnect: R, L and C
 Timing
 Arithmetic building blocks
 Memories and array structures

3
© Digital
EE141 Integrated Circuits 2nd Introduction
Introduction
 Why is designing
digital ICs different
today than it was
before?
 Will it change in
future?

4
© Digital
EE141 Integrated Circuits 2nd Introduction
The First Computer

The Babbage
Difference Engine
(1832)
25,000 parts
cost: £17,470

5
© Digital
EE141 Integrated Circuits 2nd Introduction
ENIAC - The first electronic computer (1946)

6
© Digital
EE141 Integrated Circuits 2nd Introduction
The Transistor Revolution

First transistor
Bell Labs, 1948

7
© Digital
EE141 Integrated Circuits 2nd Introduction
The First Integrated Circuits

Bipolar logic
1960’s

ECL 3-input Gate


Motorola 1966

8
© Digital
EE141 Integrated Circuits 2nd Introduction
Intel 4004 Micro-Processor

1971
1000 transistors
1 MHz operation

9
© Digital
EE141 Integrated Circuits 2nd Introduction
Intel Pentium (IV) microprocessor

10
© Digital
EE141 Integrated Circuits 2nd Introduction
Moore’s Law

In 1965, Gordon Moore noted that the


number of transistors on a chip doubled
every 18 to 24 months.
He made a prediction that
semiconductor technology will double its
effectiveness every 18 months

11
© Digital
EE141 Integrated Circuits 2nd Introduction
© Digital
LOG2 OF THE NUMBER OF
COMPONENTS PER INTEGRATED FUNCTION

EE141 Integrated Circuits


0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

2nd
1959
1960
Moore’s Law

1961
1962
1963

Electronics, April 19, 1965.


1964
1965
1966
1967
1968
1969
1970
1971
1972
1973
1974
1975
12
Introduction
Evolution in Complexity

13
© Digital
EE141 Integrated Circuits 2nd Introduction
Transistor Counts
1 Billion
K Transistors
1,000,000

100,000
Pentium® III
10,000 Pentium® II
Pentium® Pro
1,000 Pentium®
i486
100 i386
80286
10 8086
Source: Intel
1
1975 1980 1985 1990 1995 2000 2005 2010
Projected
14
© Digital
EE141 Integrated Circuits 2nd Courtesy, Intel Introduction
Moore’s law in Microprocessors
1000

100 2X growth in 1.96 years!


Transistors (MT)

10
P6
Pentium® proc
1 486
386
0.1 286
8085 8086
Transistors
0.01 on Lead Microprocessors double every 2 years
8080
8008
4004
0.001
1970 1980 1990 2000 2010
Year

15
© Digital
EE141 Integrated Circuits 2nd Courtesy, Intel Introduction
Die Size Growth
100
Die size (mm)

P6
486 Pentium ® proc
10 386
286
8080 8086
8085 ~7% growth per year
8008
4004 ~2X growth in 10 years

1
1970 1980 1990 2000 2010
Year

Die size grows by 14% to satisfy Moore’s Law

16
© Digital
EE141 Integrated Circuits 2nd Courtesy, Intel Introduction
Frequency
10000
Doubles every
1000
2 years
Frequency (Mhz)

100 P6
Pentium ® proc
486
10 8085 386
8086 286
1 8080
8008
4004
0.1
1970 1980 1990 2000 2010
Year
Lead Microprocessors frequency doubles every 2 years

17
© Digital
EE141 Integrated Circuits 2nd Courtesy, Intel Introduction
Power Dissipation
100

P6
Pentium ® proc
Power (Watts)

10
486
8086 286
386
8085
1 8080
8008
4004

0.1
1971 1974 1978 1985 1992 2000
Year

Lead Microprocessors power continues to increase

18
© Digital
EE141 Integrated Circuits 2nd Courtesy, Intel Introduction
Power will be a major problem
100000
18KW
10000 5KW
1.5KW
Power (Watts)

1000 500W
Pentium® proc
100
286 486
10 8086 386
8085
8080
8008
1 4004

0.1
1971 1974 1978 1985 1992 2000 2004 2008
Year

Power delivery and dissipation will be prohibitive

19
© Digital
EE141 Integrated Circuits 2nd Courtesy, Intel Introduction
Power density
10000
Rocket
Power Density (W/cm2)

Nozzle
1000
Nuclear
100
Reactor

8086
10 4004 Hot Plate P6
8008 8085 386 Pentium® proc
286 486
8080
1
1970 1980 1990 2000 2010
Year

Power density too high to keep junctions at low temp

20
© Digital
EE141 Integrated Circuits 2nd Courtesy, Intel Introduction
Not Only Microprocessors
Cell
Phone

Small Power
Signal RF RF

Digital Cellular Market


(Phones Shipped) Power
Management

1996 1997 1998 1999 2000


Analog
Units 48M 86M 162M 260M 435M Baseband

Digital Baseband
(DSP + MCU)

(data from Texas Instruments)

21
© Digital
EE141 Integrated Circuits 2nd Introduction
Challenges in Digital Design

 DSM  1/DSM
“Microscopic Problems” “Macroscopic Issues”
• Ultra-high speed design • Time-to-Market
• Interconnect • Millions of Gates
• Noise, Crosstalk • High-Level Abstractions
• Reliability, Manufacturability • Reuse & IP: Portability
• Power Dissipation • Predictability
• Clock distribution. • etc.

Everything Looks a Little Different


…and There’s a Lot of Them!
?
22
© Digital
EE141 Integrated Circuits 2nd Introduction
Productivity Trends
Logic Transistor per Chip (M)
10,000
10,000,000 100,000
100,000,000
1,000 Logic Tr./Chip 10,000
1,000,000 10,000,000

(K) Trans./Staff - Mo.


Tr./Staff Month.
100
100,000 1,000
1,000,000
Complexity

Productivity
10 58%/Yr. compounded 100
10,000 Complexity growth rate 100,000

1,0001 10
10,000
x x
0.1
100 1
1,000
xx
x
21%/Yr. compound
xx Productivity growth rate
x
0.01
10 0.1
100
0.001
1 0.01
10
1981
1983
1985
1987
1989
1991
1993
1995
1997
1999
2001
2003
2005
2007
2009
Source: Sematech

Complexity outpaces design productivity

23
© Digital
EE141 Integrated Circuits 2nd Courtesy, ITRS Roadmap Introduction
Why Scaling?
 Technology shrinks by 0.7/generation
 With every generation can integrate 2x more
functions per chip; chip cost does not increase
significantly
 Cost of a function decreases by 2x
 But …
 How to design chips with more and more functions?
 Design engineering population does not double every
two years…
 Hence, a need for more efficient design methods
 Exploit different levels of abstraction
24
© Digital
EE141 Integrated Circuits 2nd Introduction
Design Abstraction Levels
SYSTEM

MODULE
+

GATE

CIRCUIT

DEVICE
G
S D
n+ n+

25
© Digital
EE141 Integrated Circuits 2nd Introduction
Design Metrics
 How to evaluate performance of a
digital circuit (gate, block, …)?
 Cost
 Reliability
 Scalability
 Speed (delay, operating frequency)
 Power dissipation
 Energy to perform a function

26
© Digital
EE141 Integrated Circuits 2nd Introduction
Cost of Integrated Circuits
 NRE (non-recurrent engineering) costs
 design time and effort, mask generation
 one-time cost factor
 Recurrent costs
 silicon processing, packaging, test
 proportional to volume
 proportional to chip area

27
© Digital
EE141 Integrated Circuits 2nd Introduction
NRE Cost is Increasing

28
© Digital
EE141 Integrated Circuits 2nd Introduction
Die Cost

Single die

Wafer

Going up to 12” (30cm)

From http://www.amd.com 29
© Digital
EE141 Integrated Circuits 2nd Introduction
Cost per Transistor

cost:
¢-per-transistor
1
0.1 Fabrication capital cost per transistor (Moore’s law)
0.01
0.001
0.0001
0.00001
0.000001
0.0000001
1982 1985 1988 1991 1994 1997 2000 2003 2006 2009 2012

30
© Digital
EE141 Integrated Circuits 2nd Introduction
Yield
No. of good chips per wafer
Y 100%
Total number of chips per wafer
Wafer cost
Die cost 
Dies per wafer Die yield
 wafer diameter/2 2  wafer diameter
Dies per wafer  
die area 2 die area

31
© Digital
EE141 Integrated Circuits 2nd Introduction
Defects


 defects per unit area die area 
die yield  1  
  
 is approximately 3

die cost  f (die area)4


32
© Digital
EE141 Integrated Circuits 2nd Introduction
Some Examples (1994)
Chip Metal Line Wafer Def./ Area Dies/ Yield Die
layers width cost cm2 mm2 wafer cost
386DX 2 0.90 $900 1.0 43 360 71% $4

486 DX2 3 0.80 $1200 1.0 81 181 54% $12

Power PC 4 0.80 $1700 1.3 121 115 28% $53


601
HP PA 7100 3 0.80 $1300 1.0 196 66 27% $73

DEC Alpha 3 0.70 $1500 1.2 234 53 19% $149

Super Sparc 3 0.70 $1700 1.6 256 48 13% $272

Pentium 3 0.80 $1500 1.5 296 40 9% $417

33
© Digital
EE141 Integrated Circuits 2nd Introduction
Reliability―
Noise in Digital Integrated Circuits

v(t) V DD
i(t)

Inductive coupling Capacitive coupling Power and ground


noise

34
© Digital
EE141 Integrated Circuits 2nd Introduction
DC Operation
Voltage Transfer Characteristic
V(y)

VOH = f(VOL)
V f
OH
V(y)=V(x)
VOL = f(VOH)
VM = f(VM)

VM Switching Threshold

V OL

V OL V V(x)
OH

Nominal Voltage Levels

35
© Digital
EE141 Integrated Circuits 2nd Introduction
Mapping between analog and digital signals

V
V
out
“ 1” OH
V Slope = -1
V OH
IH

Undefined
Region

V
IL
Slope = -1

V
“ 0” V OL
OL
V V V
IL IH in

36
© Digital
EE141 Integrated Circuits 2nd Introduction
Definition of Noise Margins

"1"
V
OH
NM H Noise margin high
V
IH
Undefined
Region
NM L V
V
OL
IL Noise margin low

"0"

Gate Output Gate Input

37
© Digital
EE141 Integrated Circuits 2nd Introduction
Noise Budget
 Allocates gross noise margin to
expected sources of noise
 Sources: supply noise, cross talk,
interference, offset
 Differentiate between fixed and
proportional noise sources

38
© Digital
EE141 Integrated Circuits 2nd Introduction
Key Reliability Properties
 Absolute noise margin values are deceptive
 a floating node is more easily disturbed than a
node driven by a low impedance (in terms of
voltage)
 Noise immunity is the more important metric –
the capability to suppress noise sources
 Key metrics: Noise transfer functions, Output
impedance of the driver and input impedance of the
receiver;

39
© Digital
EE141 Integrated Circuits 2nd Introduction
Regenerative Property

out out
v3 v3
f(v) finv(v)

v1 v1

v3
finv(v) f(v)

v2 v v0 v
Regenerative Non-Regenerative

40
© Digital
EE141 Integrated Circuits 2nd Introduction
Regenerative Property

v0 v1 v2 v3 v4 v5 v6

A chain of inverters

v0
V (Volt)

1 v1
v2

21
Simulated response 0 2 4 6 8 10
t (nsec)
41
© Digital
EE141 Integrated Circuits 2nd Introduction
Fan-in and Fan-out

M
N

Fan-out N Fan-in M

42
© Digital
EE141 Integrated Circuits 2nd Introduction
The Ideal Gate
V out

Ri = 
Ro = 0
Fanout = 
g=
NMH = NML = VDD/2

V in

43
© Digital
EE141 Integrated Circuits 2nd Introduction
An Old-time Inverter
5.0

4.0 NM L

3.0

2.0
VM
NM H
1.0

0.0 1.0 2.0 3.0 4.0 5.0


Vin (V)

44
© Digital
EE141 Integrated Circuits 2nd Introduction
Delay Definitions
V in

50%

tpHL tpLH
V out
90%

50%

10% t
tf tr

45
© Digital
EE141 Integrated Circuits 2nd Introduction
Ring Oscillator

v0 v1 v2 v3 v4 v5

v0 v1 v5

T = 2  tp N
46
© Digital
EE141 Integrated Circuits 2nd Introduction
A First-Order RC Network

R
vout

vin C

tp = ln (2)  = 0.69 RC

Important model – matches delay of inverter


47
© Digital
EE141 Integrated Circuits 2nd Introduction
Power Dissipation
Instantaneous power:
p(t) = v(t)i(t) = Vsupplyi(t)

Peak power:
Ppeak = Vsupplyipeak

Average power:
1 t T Vsupply t T
Pave   p (t )dt   isupply t dt
T t T t

48
© Digital
EE141 Integrated Circuits 2nd Introduction
Energy and Energy-Delay
Power-Delay Product (PDP) =
E = Energy per operation = Pav  tp

Energy-Delay Product (EDP) =


quality metric of gate = E  tp

49
© Digital
EE141 Integrated Circuits 2nd Introduction
A First-Order RC Network Vdd
E0->1 = C LVdd2
R PMOS i
vout supply
A1 NETWORK

vAinN CVLout CL
NMOS
NETWORK

T T Vdd
E  = P t  dt = V i t  dt = V  C dV = C V 2
0 1 dd sup ply dd L out L dd
0 0 0

T T Vdd
t  dt = V t dt =  C V 1 2
E = P i dV = --- C  V
ca p cap out ca p L out out 2 L dd
0 0 0

50
© Digital
EE141 Integrated Circuits 2nd Introduction
Summary
 Digital integrated circuits have come a long
way and still have quite some potential left for
the coming decades
 Some interesting challenges ahead
 Getting a clear perspective on the challenges and
potential solutions is the purpose of this book
 Understanding the design metrics that govern
digital design is crucial
 Cost, reliability, speed, power and energy
dissipation

51
© Digital
EE141 Integrated Circuits 2nd Introduction

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