MICROWAVE DEVICES

IRINEO P. QUINTO ECE / REE

MICROWAVE TUBES
KLYSTRON AMPLIFIER AMPLIFIES MICROWAVE SIGNAL USING VELOCITY MODULATION FORMS HIGH VELOCITY ELECTRONS TYPICAL EFFICIENCY: 30-45%; MAX=70% 0.5 6.4 GHz
BUNCHER CAVITY CATCHER CAVITY

DRIFT SPACE

MICROWAVE TUBES
REFLEX KLYSTRON
LOW POWER, LOW EFFICIENCY MICROWAVE OSCILLATOR 4-200 GHz <10% EFFICIENCY TYP Po=100 mW
T = n + 3/4
T transit time n any integer
OUTPUT REPELLER

ANODE

MAGNETRON
A DIODE WHICH USES THE INTERACTION OF MAGNETIC AND ELECTRIC FIELDS IN A COMPLEX CAVITY TO PROVIDE OSCILLATIONS 10 MW UHF; 2MW XBAND; 80 kW 95 GHz EFFICIENCY OF 50-60% TYPES OF:
HOLE & SLOT VANE RISING SUN COAXIAL

MICROWAVE TUBES
TRAVELING WAVE TUBE (TWT)

CROSS FIELD AMPLIFIER (CFA)

CROSS BETWEEN THE TWT & MAGNETRON PULSED TYPE 1-18 GHz, 5MW UHF, 70%; 1 MW X BAND, 55%

THE INTERACTION BETWEEN THE BEAM AND THE RF FIELD IS CONTINUOUS CAN BE USED AS A LOW-LEVEL, LOW NOISE AMPLIFIER OR AS A HIGH POWER ONE, EITHER CW OR PULSED 2 16 GHz, 30-45 dB GAIN, F=4-10 dB, 10-100 mW CW 1-100 GHz, UP TO 10 kW, 25-35% effy PULSED 2-40 GHz,1-250 kW

BACKWARD WAVE OSCILLATOR (BWO)

SHORTER & THICKER TWT MICROWAVE CW OSCILLATOR 1-1000 GHz

Microwave Tubes

1 MW Average power

Microwave tubes

Higher power Limited life time High vacuum

1 KW

High potential
Microwave semiconductor devices

1W

Lower weight Smaller size Longer life time

1mW 0.3 300 1 3 10 30 Frequency (GHz) 100

Two possible methods of achieving high output power in microwave system

Low power High power tube semiconductor amplifier oscillator

High power tube oscillator

Important Parameters
Peak power Efficiency Bandwidth Harmonic and spurious power Manufacturability at low cost Average power Gain Frequency Intermodulation products

Type

Relative BW (%)

(%)

Gain (dB)

Relative spurious level

Relative operating voltage

Relative complexity of operation

Gridded tube
Klystron Helix tube Coupled cavity tube

1-10
1-5 30-120 5-40

20-50
30-70 20-40 20-40

6-15
40-60 30-50 30-50

2
1 3 3

Low
High High High

1
2 3 3

Average power
10 MW 1000 MW

Peak power

Klystron
1 MW 100 MW

Klystron

100 KW 10 KW

Gridde d tube Helix TWT

Coupled cavity TWT

10 MW 1 MW

Gridde d tube Helix TWT

Coupled cavity TWT

1 KW 100 W

100 KW 10 K W

0.3 1 3 10 30 100 300 Frequency (GHz)

0.3 1 300

10

30

100

Frequency (GHz)

Klystron
Microwave input Microwave output

Electron beam

Electro n Gun

Beam collector

Intermediate cavity

TWT

Major applications for TWTs include: Amplifiers:

Space applications Radar Electron Counter Measure Missile

Driver for other high power RF amplifiers

Missile TWTs for Active Seekers Features that influence the design include: Minimal size and weight; Narrow-to-moderate bandwidths;. Off-to-fully-operational turn-on times of one second or less; High efficiency; High reliability after long inactive storage periods. Normally, these TWTs are of the periodic-permanent-magnet (PPM) focused helix variety. They normally utilize unique cathode-heater designs to provide the very fast warm-up required. They typically have multiple stage depressed collectors with conduction cooling.

Microwave Ovens

5. Microwave ovens

Source:NPL

Electromagne tic spectrum

Infra Red Radio & TV Ultra Violet Gamma-Rays

Microwaves X-Rays Microwave Oven Conventional Oven

Microwaves From 0.8 GHz to 1000 GHz

1 101 102 103 104 105 106 107 108 109 1010 1011 1012 1013 1014 1015 1016 1017 1018 1019 1020 1021 1022

Absorption (1) Too strong

If power were absorbed too strongly,
Microwaves would only penetrate a short distance Surface would be heated Inside would remain uncooked
0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.01 0.1 1 Frequency (GHz) 10 100 Microwave ovens operate at 2.45 GHz

Absorption (2) Too weak

If power were absorbed too weakly,
Microwaves would go right through No cooking

0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.01 0.1 1 Frequency (GHz) 10 100 Microwave ovens operate at 2.45 GHz

Absorption (3)
If power is absorbed just right,
Microwaves penetrate about 5 cm (2 inches) Cooks the outer 5 cm of the food Good enough for most cases

0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.01 0.1 1 Frequency (GHz) 10 100 Microwave ovens operate at 2.45 GHz

Microwave Ovens Summary

A microwave oven cooks food by heating it The heating comes from
intense waves at 2.45 GHz
rather than

a wide spectrum of waves at infra red frequencies. Frequency chosen because of absorption properties of water molecules at that frequency.

Microwave Generation Cavity Magnetron Valve

Microwave Ovens
Magnetron

Microwave Ovens

Inside a microwave oven

Microwave Power
Power This is a 700 watt oven Think of 7 x 100 watt light bulbs

Microwave Electric field

700 watts Around 140 000 volts per metre Look what happens to a CD

Microwave Intensity
700 watts
transmitted into an area of around 1/25th square metre Between 104 to 105 watts per square metre
(Most intense sunlight around 103 watts per square metre)

Very Dangerous Could I have a stupid volunteer please?

A Cautionary Tale
August 14, 2002 I don't want to sound like I know everything in the world or even like I know quite a lot. But you had a question regarding If a microwave oven door were to open while it was still on, what would happen? Could it hurt you?JP Well ..Having the thought process that I have, kinda how should I put it? ...Stupid? or inventive or even in-between. Well, my microwave door did happen to come off. Magic Chef 900-watt microwave. Well, I did my best to try to fix it but the hinge on one side did not attach properly, therefore having a gap between Dont try this at home! the door and the appliance. Being me (stupid) I wondered if it would burn fast or would it gradually warm up. I slid my finger between...You probably dying to hear what happened... But it didn't gradually warm up at all. It was instant heat! It didn't scar me or anything like that, but sure scared the H*** out of me to find out it got so hot so quick. I didn't get any blisters either. But it just burned like touching something hot on the tip of my finger being that is the only thing I put in. Well you know the old adage, "You learn from your mistakes", stands true. lol -

Microwave Oven SAR inside oven

Inside
700 watts: Absorbed in 1 kg of water: SAR = 700 watts per kg
Your brain weighs about a kilogram!

QUESTION: After 1 minute, what temperature rise results from an SAR of 700 watts per kg?

Microwave Ovens (13) SAR

Temperature Rise in 1 kg of Brain Fluid

SAR Watts
per kilogram

Microwave
Mobile Phone

700
1

8 C (ish)
Cant be measured directly

Expect 1/700 of microwave temperature rise The effects of blood flow reduce this further

Semiconductor Microwave Devices

SEMICONDUCTOR MICROWAVE DEVICES

TRANSISTOR
2-4 GHz, 9W, 12-8 dB 29.5-32.5 dB at 4-6 GHz, 15 mW FET G=10dB, 9-15 GHz, F=714 dB

GUNN DIODE
WORKS ON THE PRINCIPLE OF TRANSFERRED ELECTRON EFFECT MADE WITH GaAs AND InP CW 4-75 GHz (1.5W 50 mW), 12-2% (TYP EFFY: 2.55%)

PARAMETRIC AMPLIFIER
USES A DEVICE WHOSE REACTANCE VARIES SUCH THAT AMPLIFICATION RESULTS

SEMICONDUCTOR MICROWAVE DEVICES

IMPACT AVALANCHE & TRANSIT TIME DIODE (IMPATT)
MADE OF Si OR GaAs WORKS LIKE TUNNEL DIODE / GUNN DIODE MADE OF 4 LAYERS

OTHER MICROWAVE DIODES

TUNNEL VARACTOR SCHOTTKY BARRIER PIN

TRAPPED PLASMA AVALANCHE TRIGERRED TRANSIT TIME DIODE (TRAPATT)

PULSED 600 W, 1 GHz, 75% (TYP:30%)

Semiconductor Microwave Devices

Most microwave devices are fabricated on a GaAs substrate because of its high mobility. A silicon substrate, on the other hand, has the advantages of low cost and high yield. The following table summarizes the various microwave solid-state devices and their applications. Device Frequency Limitation Substrate Material Major Applications

IMPATT Gunn

< 300 GHz < 140 GHz

Si, GaAs, InP GaAs, InP

GaAs, InP Si, GaAs GaAs
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Transmitters Amplifiers
Local oscillators, Amplifiers Transmitters Amplifiers , Oscillators, Switches, Mixers, and Phase shifters Switches, Limiters, Phase shifters, Modulators, and Attenuators Multipliers, Tuning, Phase shifters, and Modulators

FET&HEMT < 100 GHz p-i-n Varactor < 100 GHz < 300 GHz

Microwave Engineering/Active Microwave Devices 9-13 September 2006

Microwave Diodes
A microwave diode is much more than just a two-element device which has limited capabilities. It is a complex device which an integral part of many sophisticated microwave systems. Many devices have been developed using the non-linear I-V and C-V characteristics of the p-n or Schottky-barrier junction. Various applications are summarized below
Non-linear I-V Characteristics Frequency mixing Harmonic generation Switching Modulation Limiting Non-linear C-V Characteristics

Frequency multiplication Voltage Controlled Oscillator Voltage tuned filter Frequency conversion Harmonic generation Parametric amplification
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Detection
Microwave Engineering/Active Microwave Devices 9-13 September 2006

Non-Linear Characteristics of p-n and Schottky diodes

I C

VB

Is V

VB Vbi V

Non-linear I-V Characteristics of a diode

Non-linear I-V Characteristics of a diode

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Varactor Devices and Circuits

Semiconductor p-n junction, or Schottky-barrier n-type semiconductors with p-type diffusion Important parameters: Q factor Cutoff frequency

Breakdown voltage
Sensitivity.

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Applications: (1) Voltage controlled Oscillator VCO:

FM systems and frequency agile systems

Instrumentation

Electronic warfare (EW)

Electronic counter measurement (ECM) systems.

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(2) Multiplier and harmonic generation

Feasible alternative for the generation of high frequency signal

LPF and matching Zo Cj(V)

BPF and matching Zo

Rs

Varactor

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(3) Parametric Amplifiers:

Provide very low noise amplification

Output

Circulator

Combiner and Varactor

Pump signal

Input
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p-i-n Diodes
Similar to the pn diode with smaller junction capacitance

Very useful for a diode used a microwave switch

P+

n+

Ls Rs

Weakly doped P-i-n structure

Rp

r.b.

Cj(V)

Parasitics Ls~ 0.1 nH f.b. Cp~ 0.3 pF Rs~ 0.3 W

Rj(V)

Equivalent circuit of p-i-n

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Switches Applications
Output Switch Source Bias (1) Modulators in communication systems t

Wideband switch

(2) Switch in wide band system .

.

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Tx Rx (3) To protect receiver from the transmitter (such as in radar system)

(4) Channel selection in wideband system (5) Signal path control in measurement systems As a switch the main important p-i-n diode parameters are Isolation and Insertion loss
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p-i-n Diode Attenuator

p-i-n diode attenuator circuits are used extensively in automatic gain control (AGC) and RF leveling applications as well as in electronically controlled attenuators and modulators
Zo Reflective type

Zo

A = 20log (1 + Zo/2Rs)
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Matched attenuator
3-dB quadrature coupler p-i-n diode

Input

Zo
Bias p-i-n diode Zo

Output

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p-i-n Phase Shifters

Input Output
l/4

3-dB, 90o
Hybrid

Input

Output
Zo

B1 Hybrid coupler phase shifter. Uses the fewest diodes. Any phase shift increment can be obtained with proper design of the terminating circuit.

B2 Diode

B1

B2 Diode

The loaded line phase shifter

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Switched line phase shifter

L1

L2

Bias

Switching action is used to obtain insertion phase by providing alternative transmission paths, the difference in electrical length being the desired phase shift

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Limiter p-i-n Diodes

Used for protection applications

Limiter 3 dB Coupler Limiter 3 dB Coupler

Transmitter

Receiver

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Pout p-i-n diode Pin Pout

Maximum Isolation Insertion loss

Pin
Passive Limitation. No exterior control is needed and the incident microwave power is responsible for switching from the high impedance state to low impedance state of the diode

Microwave Engineering/Active Microwave Devices 9-13 September 2006

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p-i-n diode

Control

Schottky diode

p-i-n diode

pulse

Pin

Pout

Pin

Pout

Controlled limitations. This method gives lower losses, better isolation, but require a delicate control circuit. Any loose of control affect receiver protection

Controlled limitations. A small part of the incident signal is sampled and detected by Schottky diode whose the rectified current biases the diode in the forward state. The losses at low level are slightly higher, adjustments are very difficult

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Gunn Diodes
Single piece of GaAs or Inp and contains no junctions Exhibits negative differential resistance Applications: low-noise local oscillators for mixers (2 to 140 GHz). Low-power transmitters and wide band tunable sources Continuous-wave (CW) power levels of up to several hundred mill watts can be obtained in the X-, Ku-, and Ka-bands. A power output of 30 mW can be achieved from commercially available devices at 94 GHz.

Higher power can be achieved by combining several devices in a power combiner.

Gunn oscillators exhibit very low dc-to-RF efficiency of 1 to 4%.
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Varactor Tuned Gunn Oscillators Circuits

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IMPATT Devices and Circuits

IMPact Ionization Transit Time

IMPATT devices can be used for oscillator and amplifier applications They can be fabricated with Si, GaAs, and InP
Can be used up 400 GHz. Noisy oscillator In general, IMPATTs have 10 dB higher AM noise than that of Gunn diodes IMPATT diode is not suitable for use as a local oscillator in a receiver.
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Some IMPATT Circuits

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