Chapter 3 DEO40023 Part 2
Chapter 3 DEO40023 Part 2
Chapter 3 DEO40023 Part 2
OPTOELECTRONIC
Chp. 3 – Light Source(LASER)…
4
3 process of light emission
E2 E2 E2
h h
h h In
Out
h
E1 E1 E1
• Laser diode emits light spontaneously below threshold similar as LED, but
• The output power versus drive current for laser exhibits threshold behaviour
• The laser diode has higher output power compared to LED but does not
•The angular distribution pattern is much more directional for a laser than a LED.
Properties of lasers
Example:
Answer:
Properties of lasers
Spectral purity: •This property is an advantage for fiber
•The response time of laser diode can be faster compared to LED which is limited
•The stimulated emission in laser provides an additional way for the electron to
decay out of the conduction band which resulting in shorter lifetime of electron
and improved time response.
•The time response of laser diode is best at high excitation, where the stimulation
• Active region thickness, d smaller than 0.1µm is not beneficial in DH laser because the
lightwave mode cannot stay confined to such a small dimension. The issue is solved in
quantum well laser, where a quantum is formed and the motion of carrier
perpendicular to the layer is constrained by the well which results in discrete energies.
• The carrier can still move freely parallel to the layers, however making the movement
of charge carrier effectively two dimensional.
flexibility in manufacturing.
The properties of laser can be fine-tuned by selecting the materials for the layers that are
• Utilizes a Bragg grating built into the structure of the device to narrow the
linewidth. This can be formed by continuously varying the thickness of one the
layer in the structure.
• Advantages:
Narrower line width.
Less sensitive to the change of temperature and have more linear output
•Was made successful by employing Bragg grating reflectors both above and below
the active layer, which consists of the alternating layers of semiconductors with
different bandgap.
•Advantages:
•2-D arrays of VCSELs can be naturally created in this way, each laser being
individually controllable. Wavelength of the laser can be varied by controlling the
cavity length.
Types of semiconductor lasers
Quantum Cascade Laser:
• Utilizes the concept of intraband transition approach. It consists of alternate
layers of higher and lower bandgap material, forming a series of closely spaced
Quantum Wells.
• A voltage is applied across the device, which causes the electron’s potential
energy to vary linearly with position.
• Advantages:
Wide bandgap materials can be used in the layers for better performance.
Lasing wavelength can be simply selected by choosing the proper QW
spacing and width.
• Possible to operate at multiple wavelengths simultaneously by varying the QW
energy levels.