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Technical Seminar - Shivprasad

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Technical Seminar - Shivprasad

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shashindra KG
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© © All Rights Reserved
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║Jai Sri Gurudev║

Sri AdichunchanagiriShikshana Trust (R)


S J B INSTITUTE OF TECHNOLOGY
BGS Health & Education City, Kengeri, Bangalore – 60.
Department of Electronics & Communication Engineering

TECHNICAL SEMINAR
On
“ LOGIC DESIGN USING MEMRISTORS:
AN EMERGING TECHNOLOGY ”

Under the Guidance of


By:
Mrs. UMA S
SHIVA PRASAD R
Asst. Professor
1JB16EC094
Dept. of ECE, SJBIT

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 Content:
Abstract

Literature survey

Introduction

Memristor

Logic synthesis with memristors

Near Memory And In-memory Computing

Memristor applications and advantages

Conclusion

References (Bibliography)
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 ABSTRACT

• Memristors possess some unique properties, i.e. it can change the resistance
under voltage control and can retain its value even after the voltage is
withdrawn.
• The resistive switching property of memristors allows to execute logic
primitives and thus can also be used for implementing logic functions using
various logic design styles studied in this paper.
• The paper also discusses memristor fabrication, circuit models, methods for
implementing logic functions, and the various computing methodologies that
can be used viz. near memory computing and in-memory computing.
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 LITERATURE SURVEY
TITLES PUBLICATIONS REMARKS CONCLUSION
Memristor Applications for Sangho Shin, Kyungmin Kim, Sung- This paper demonstrates that memristors Memristor can be uniquely applied for
Programmable Analog ICs Mo (Steve) IEEE TRANSACTIONS can be used to implement programmable programmable analog circuits, as shown
ON NANOTECHNOLOGY, VOL. 10, analog circuits, leveraging memristor’s through a memristor-based
NO. 2, MARCH 2011 fine-resolution programmable resistance. programmable gain amplifier.

Fabrication of TiO2 Thin Film N. Duraisamy, N. M. Muhammad, H. This paper as reported the fabr of The key findings of this work ensure the
Memristor Device Using C. Kim, J. D. Jo, and K. H. Choi, Thin memristor device using EHD inkjet potential application of
Electrohydrodynamic Inkjet Solid Films (Elsevier), vol. 520, pp. printing technology. The TiO2 active electrohydrodynamic inkjet printing
Printing 5070–5074, 2012. layer was deposited using EHD technique for the fabrication of
atomization technique nanoelectronics printed devices.

Memristor-Based Material S. Kvatinsky, G. Satat, N. Wald, E. G. In this paper, the IMPLY logic gate, is The results described in this paper can
Implication (IMPLY) Logic: Friedman, A. Kolodny, and U. C. described. In this logic family, each be used to direct further research on
Design Principles and Weiser, IEEE Trans. VLSI Syst., vol. memristor is used as an i/p ,o/p, device structure optimization, logic
Methodologies 22, no. 10, pp. 2054–2066, Oct 2014. computational logic element, and latch in synthesis methods, array structures, and
different stages of the computing computing architectures.
process.
Design and Implementation of a Ping-Hsuan Hsieh, Ming-Li Tang, This paper presents the design and Measurement results show an opr freq
Memristor-Based Oscillator Sheng-Yen Hsu, Meng-Hung Lin, and implementation of a memristor-based range of 300-1150 kHz, power
Yi-Hsiu Chen ,978-1-7281-0397- oscillator, investigating potential analog consumptions of 700 to 830 μW, and k
6/19/$31.00 ©2019 IEEE applications for memristors. of <6.5e–5 for free-running oscillator
jitter performance.

A Memristor-Based Y. Hong and Y. Lian, IEEE Memristors ability to store and reproduce (ECG) signals accompanied with high-
Continuous-Time Digital FIR Transactions on Circuits And Systems timing information in an analog manner frequency noise. The simulated power
Filter for Biomedical Signal —I: Regular Papers, vol. 62, no. 5, without performing quantization can be consumption under a 3.3-volt supply
Processing May 2015. useful for a wide range of applications. was 6.63 µw

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 INTRODUCTION

• THE MISSING LINK

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 Memristor
Memristor is a portmanteau of “memory resistor”. It is a passive device with
two terminals, where the magnetic flux is related to the amount of passed electric
charge through the device. Since memristor is not an active element, it can not
store or generate any power. The symbol of a memristor is shown in Figure 3.1.

FIGURE 3.1: SYMBOL OF A MEMRISTOR

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 MEMRISTOR PROPERTIES
• FLUX-CHARGE RELATION • CURRENT-VOLTAGE RELATION

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 MEMRISTOR MODELING

• LINEAR ION DRIFT MODEL

FIGURE 3.5 : HP MEMRISTOR MODEL

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 LOGIC SYNTHESIS WITH MEMRISTORS

• IMPLY DESIGN STYLE

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• BDD BASED SYNTHESIS

The starting point for BDD based synthesis is to realize the logic primitive designating each graph node, i.e., a 2-
to-1 multiplexer (MUX), with memristors.

FIGURE. 3.7: THE REALIZATION OF MUX WITH MEMRISTORS USING IMPLY STYLE

• AIG BASED SYNTHESIS

The nodes of each AIG level are evaluated simultaneously, such that the employed memristors can be reused
for the successive levels. Then, the memristors are used as the inputs of the upper level and this procedure is
continued until the target function is evaluated.

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• MIG BASED SYNTHESIS

An MIG is a homogeneous logic network with indegree equal to 3 and with each node representing the
majority function. In an MIG, edges are marked by a regular or complemented attribute.

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 MAGIC DESIGN STYLE

It is a stateful logic design style where the resistance values represent the logic states. The input(s) and
output values are stored in different memristors. All basic gates (NOT, AND, 124 OR, NOR, NAND) can be
implemented using the MAGIC design style

FIGURE. 3.10. 2-INPUT MAGIC NOR GATE AND EQUIVALENT CIRCUIT


MAPPED IN CROSSBAR

FIGURE. 3.9. BASIC GATES REALIZED USING THE MAGIC DESIGN STYLE.

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 NEAR MEMORY AND IN-MEMORY COMPUTING: CHALLENGES
AND IMPLEMENTATION ISSUES

IN-MEMORY NEAR-MEMORY
COMPUTING COMPUTING
. • In-memory, the • Near-memory
idea is to bring computing (NMC)
the memory and aims at processing
logic closer in the close to where the
system data resides.

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 IN-MEMORY COMPUTING

• Both of the two discussed styles for logic-in-memory computing result in


sequences of computational steps.
• Accordingly, lowering the number of steps as well as the number of memristors
are considered important objectives for in-memory computing architectures.
• For this purpose, usually memristors storing the intermediate results are reused
for computation in the successive steps to avoid usage of extra steps or devices.
• Using IMPLY for synthesis, unbalanced distribution of writes happens due to
the lack of commutativity property, which results in higher write traffic in the
memory cell storing the output of the operation.

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 NEAR-MEMORY COMPUTING

• The term near-memory signifies that the input memristors need to be configured
prior to the evaluation as opposed to in-memory computing, where the inputs are
already present in memory.
• Broadly two mapping techniques are discussed, serial and parallel. In serial
mapping the gates are evaluated one by one,and in parallel mapping, several gates
are evaluated in a single time step

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FIGURE 4.1 (A) EVALUATION OF LEVEL 1. (B) EVALUATION OF LEVEL 2

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 MEMRISTOR APPLICATIONS  ADVANTAGES
 It utilizes less energy and generates less
heat.
 When power is interrupted in data
centers, it gives greater reliability and
resiliency.
 Memristors do not consume power when
idle and are comfortable with CMOS
interfaces.
 Density permits additional information to
be stored.

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 CONCLUSION

A brief introduction to memristors and its applications in logic design has been
discussed in this paper. After introducing the IMPLY design style, three scalable
synthesis approaches using BDDs, AIGs, and MIGs are discussed in some
detail. Finally, the MAGIC design style is discussed and various issues in
crossbar mapping and evaluation are also highlighted.

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References
[1] L. Chua, “Memristor – The missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, no. 5, pp. 507–519, Sep 1971.

[2] N. Duraisamy, N. M. Muhammad, H. C. Kim, J. D. Jo, and K. H. Choi, “Fabrication of Tio2 thin film memristor device using
electrohydrodynamic inkjet printing,” Thin Solid Films (Elsevier), vol. 520, pp. 5070–5074, 2012.

[3] S. Kvatinsky, G. Satat, N. Wald, E. G. Friedman, A. Kolodny, and U. C. Weiser, “Memristor-Based Material Implication
(IMPLY) Logic: Design Principles and Methodologies,” IEEE Trans. VLSI Syst., vol. 22, no. 10, pp. 2054–2066, Oct 2014.

[4] Y. Hong and Y. Lian, “A memristor-based continuous-time digital FIR filter for biomedical signal processing,” in IEEE
Transactions on Circuits And Systems—I: Regular Papers, vol. 62, no. 5, May 2015.

[5] Ping-Hsuan Hsieh, Ming-Li Tang, Sheng-Yen Hsu, Meng-Hung Lin, and Yi-Hsiu Chen “Design and Implementation of a
Memristor-Based Oscillator,” 978-1-7281-0397-6/19/$31.00 ©2019 IEEE

[6] Sangho Shin, Kyungmin Kim, Sung-Mo (Steve) Kang “Memristor Applications for Programmable Analog ICs,” IEEE
TRANSACTIONS ON NANOTECHNOLOGY, VOL. 10, NO. 2, MARCH 2011

[7] N. Talati, S. Gupta, P. Mane, and S. Kvatinsky, “Logic Design Within Memristive Memories Using Memristor-Aided loGIC
(MAGIC),” IEEE Trans. Nanotechnol., vol. 15, no. 4, pp. 635–650, July 2016.

[8] S. Kvatinsky, M. Ramadan, E. G. Friedman, and A. Kolodny, “VTEAM: A general model for voltage-controlled memristors,”
IEEE Trans. Circuits Syst. II, vol. 62, no. 8, pp. 786–790, Aug 2015.
07/24/2024 Dept of ECE 19
Thank you

07/24/2024 Dept of ECE 20

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