BJT Transistor
BJT Transistor
(EDC)
Arjun Singh Vijoriya
Assistant Professor & ICT Manager
CHAPTER-2
Bipolar Junction Transistor
BJT
• A bipolar junction transistor is a three-terminal semiconductor
device that consists of two p-n junctions which are able to amplify
or magnify a signal.
• It is a current controlled device.
• Current flow in the BJT due to both electrons and holes that’s why
it is called bipolar transistor.
• The three terminals of the BJT are the base, the collector, and the
emitter.
• BJT is used as a switch, as an amplifier, as a filter, as an oscillator,
as a demodulator, in clipping circuits, in Logic circuits.
Types of BJT:
There are two types of bipolar junction transistors:
• PNP bipolar junction transistor
• NPN bipolar junction transistor
Construction
:
• A transistor has three doped regions Emitter,
Base and Collector.
• Base region is much thinner as compared to
the collector and emitter regions.
• Emitter is heavily doped.
• The base is lightly doped.
• The doping level of the collector is
intermediate, between the heavy doping of the
emitter and the light doping of the base.
• The collector is physically the largest of the
three regions.
The Biased Transistor
• The heavily doped emitter emits or injects its
:free electrons into the base.
• The lightly doped base pass emitter-injected
electrons on to the collector.
• The collector collects or gathers most of the
electrons from the base.
IE = IC + IB
Since the base current is so small, the
collector current approximately equals the
emitter current:
IC ≃ IE
and the base current is much smaller than
Transistor Currents
Alpha is the ratio of the
:
Transistor Currents
:
Transistor Circuit Configurations/Connections
• :There are three types of transistor circuit configurations :
– CE (common emitter)
– CC (common collector)
– CB (common base)
CE (common emitter) Configurations/Connections
• :The common or ground side of each voltage source is
connected to the emitter. Because of this, the circuit is called
a common emitter (CE) connection.
• The circuit has two loops. The left loop is the base loop, and
the right loop is the collector loop.
• VBB source forward-biases the emitter diode with R B as a
current-limiting resistance.
• By changing VBB or RB, we can change the base current. VBB Base Source Voltages w.r.t
Changing the base current will change the collector current. ground.
VCC Collector Source Voltages
In other words, the small base current controls the large
w.r.t ground.
collector current.
VCE voltage between points B
• In the collector loop, a source voltage V CC reverse-biases the &E
collector diode through RC. VBC voltage between points B
&C
• The collector must be positive to collect most of the free electrons VBE voltage between points B
&E
injected into the base.
VCE = VC – VE Here VE =
Transistor Characteristics:
:
• There two characteristics for transistor:
– Input Characteristic : This is graph between input current IB and input voltage VBE for different constant VCE
Voltages.
– Output Characteristic: This is the graph between output current (IC) and output voltage (VCE) for different
(VCE).
• Saturation region: There is the early rising part of the curve, where V CE
is between 0 V and a few tenths of a volt. This sloping part of the curve
is called the saturation region. In this region, the collector diode has
insufficient positive voltage to collect all the free electrons injected into
the base.
• Cutoff Region: The base current is zero, but there still is a small collector
current. On a curve tracer, this current is usually so small that you
cannot see it. We have exaggerated the bottom curve by drawing it
larger than usual. This bottom curve is called the cutoff region of the
transistor.
Regions of Operation
• Transistors operate in the active region when they are
used to amplify weak signals.
• Sometimes, the active region is called the linear region
because changes in the input signal produce
proportional changes in the output signal.
• The saturation and cutoff regions are useful in digital
and computer circuits, referred to as switching circuits.
• Transistor has a power dissipation of approximately:
PD = VCE * IC
Transistor Approximations – Ideal
• We visualize the emitter diode as an ideal diode.
In this case, VBE = 0. This allows us to calculate
base current quickly and easily.
• The collector side of the transistor acts like a
current source that pumps a collector current of
βdcIB through the collector resistor.
• VCBO, which stands for the voltage from collector to Current Gain:
base with the emitter open.
Beta= IC /IB
Accurate VDB Analysis
Accurate VDB Analysis
VDB Load Line and Q Point
VDB Load Line and Q Point
Two-Supply Emitter Bias (TSEB).
• This type of biasing have two supply as shown in the
figure.
a) Q-point
b) Saturation point
c) Cut-off point
d) Breakdown point
Answer: a) Q-point
Quiz
Q3. Which of the following statements about the active region of a transistor
is true?
Answer: c) Active
Quiz
Q. What is the primary purpose of a transistor as a switch?
a) To amplify signals
b) To regulate voltage
c) To control current flow
d) To produce oscillations
Q. Which of the following factors can cause a shift in the operating point of a
transistor?
a) Temperature changes
b) Collector resistance variations
c) Changes in power supply voltage
d) All of the above
Answer: c) Saturation
a) Q-point
b) Breakdown point
c) Saturation point
d) Cut-off point
Answer: a) Q-point
Quiz
Q. In a common-emitter configuration, the collector current is primarily
determined by:
a) Active
b) Cut-off
c) Saturation
d) Inverse
Answer: c) Saturation
Quiz
Q. The base-emitter junction of a transistor is typically:
a) Reverse-biased
b) Forward-biased
c) Open-circuited
d) Short-circuited
Answer: b) Forward-biased
a) Saturation
b) Cut-off
c) Active
d) Inverse
Answer: b) Cut-off
Quiz
Q. The term "hFE" is commonly associated with:
a) Saturation
b) Cut-off
c) Active
d) Inverse
Answer: b) Cut-off
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