Scribd Logo
Upload

Welcome to Scribd!

  • 105 views

    EC105

    Uploaded by

    api-3853441
    - The document discusses the working of an NPN transistor biased for active operation, with the emitter junction (JE) forward biased and the collector junction (JC) reverse biased. - Electrons from the N emitter cross JE, with 1-2% recombining with holes in the P base to form the base current (IB). The remaining 98-99% are collected by the N collector. - The collector current (IC) consists of a fraction (α) of the emitter current (IE) plus a reverse saturation current (ICBO) due to minority charge carriers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd

    EC105

    Uploaded by

    api-3853441
    105 views16 pages
    - The document discusses the working of an NPN transistor biased for active operation, with the emitter junction (JE) forward biased and the collector junction (JC) reverse biased. - Electrons from the N emitter cross JE, with 1-2% recombining with holes in the P base to form the base current (IB). The remaining 98-99% are collected by the N collector. - The collector current (IC) consists of a fraction (α) of the emitter current (IE) plus a reverse saturation current (ICBO) due to minority charge carriers.

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PPT, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    - The document discusses the working of an NPN transistor biased for active operation, with the emitter junction (JE) forward biased and the collector junction (JC) reverse biased. - Electrons from the N emitter cross JE, with 1-2% recombining with holes in the P base to form the base current (IB). The remaining 98-99% are collected by the N collector. - The collector current (IC) consists of a fraction (α) of the emitter current (IE) plus a reverse saturation current (ICBO) due to minority charge carriers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    105 views16 pages

    EC105

    Uploaded by

    api-3853441
    - The document discusses the working of an NPN transistor biased for active operation, with the emitter junction (JE) forward biased and the collector junction (JC) reverse biased. - Electrons from the N emitter cross JE, with 1-2% recombining with holes in the P base to form the base current (IB). The remaining 98-99% are collected by the N collector. - The collector current (IC) consists of a fraction (α) of the emitter current (IE) plus a reverse saturation current (ICBO) due to minority charge carriers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 16

    DEPARTMENT OF TECHNICAL EDUCATION

    ANDHRA PRADESH

    Name : Mrs.P.Sasi Bala


    Designation : AL/EC
    Branch : Electronics and communications engg.
    Institute : 028, SIR C.R.REDDY POLYTECHNIC.
    ELURU.
    Year / semester : First year
    Subject : Electronic Component and Devices
    Subject Code : EC-105
    Topic : Transistors
    Duratilon : 50 Mts
    Sub Topic : NPN Transistor
    Teaching Aids : PPT DIAGRAMS.

    EC105.134 1
    OBJECTIVE :-

    • Working of NPN transistor.

    EC105.134 2
    Recap

    • What is the use of a transistor?

    • In PNP transistor emitter emitts _______.

    • What is the function of a collector?

    EC105.134 3
    • Let us consider the NPN transistor biased for active operation
    as shown in fig :-

    EC105.134 4
    JE JC

    Fig :- NPN transistor biased for active operation


    EC105.134 5
    • JE is forward biased and JC is reverse biased.

    • The forward bias at JE causes the majority charge carries


    (electrons from N type emitter) to cross the emitter junction JE
    constituting for emitter current IE.

    • The emitter current consists of holes crossing from base to


    emitter at JE.

    EC105.134 6
    • Almost all the emitter current IE consists of electrons.

    • In the P type base region, 1% -2% of electrons injected by the


    emitter recombine with few holes, this recombination results in
    Base current IB.

    • The reverse bias at JC causes the N type collector to collect


    the 99%- 98% of electrons emitted by the Emitter. These are
    majority charge carriers in NPN transistor.

    • There are thermally generated charge carriers in the Base and


    Collector regions which are minority charge carriers, constitute
    for reverse saturation current ICBO.

    EC105.134 7
    Transistor currents in NPN transistor

    EC105.134 8
    • ICBO means the minority carrier current from Collector to Base
    when Emitter open.

    • The reverse current is temperature dependent it get doubles for


    every 10oC rise in temperature.

    EC105.134 9
    • The Collector current consists of a fraction of Emitter current IE
    (α IE) and the reverse saturation current (ICBO).

    IC = α I E + ICBO
    ↓ ↓
    (majority) (minority)

    EC105.134 10
    Summary :

    • IB = 1% to 2% of IE.

    • IE = IB + I C.

    • IC = α IE + ICBO.

    EC105.134 11
    Frequently Asked Questions in Exams

    • Explain the working of NPN transistor.

    EC105.134 12
    QUIZ

    1. In a NPN transistor, Electron flow ________.

    a) into the Transistor at the Collector and Base leads .

    b) into the Transistor at the Emitter and Base leads.

    c) out of the Transistor at the Collector and Base leads.

    d) out of the Transistor at the Emitter and Base leads.

    EC105.134 13
    2. For all transistor configurations, Emitter current
    sum
    is the _________ of Base and Collector current.

    EC105.134 14
    3. The Total Base Current of a transistor consists
    opposite
    of two currents flowing in___________direction.

    EC105.134 15
    4. The leakage currents in a transistor is due to
    minority
    _______________ carries and is extremely
    temperature
    _______________dependent.

    EC105.134 16

    You might also like