Chapter 11
Chapter 11
Chapter 11
The Assumptions:
1. The time variation of signal is not too rapid, i.e., the signal's frequency is
not too high.
2. The active devices, such as BJT, FET, have been properly biased so that
they operate in active-gain region.
3. In low-frequency (<10kHz) the small-signal models for BJT and FET can
be constructed out of resistive elements.
If the increment of vBE , vbe, is a small signal (<<VT), then we can represent
the collector current approximately:
q
VBE q q
iC I ES e kT
1 vbe I C I C vbe
kT kT
Therefore the input and output increments can be represented as
q 1 1 q 1
ic I C vbe g m vbe ; ib ic I C vbe vbe
kT 0 0 kT r
Chair Professor Rui-Xiang Yin (South China University of Technology)
Chapter Eleven Small-Signal Model and Circuits
Where gm is called transconductance 跨导 , r is e-b equivalent increment r
esistance
q kT
gm IC ; r 0 0
kT q IC gm
Note: gm and r are dependent of static operating point IC and junction temper
ature. At the room-temperature (27ºC) they may be evaluated numerically as
follows
25.8(mV )
g m ( S ) 0.03876 I C (mA) ; r () 0
I C (mA)
The following are two the small-signal models for a BJT
v0 g m RC r || RB
Av
vi RS r || RB
Usually the bias resistor RB is much larger than r , so RB|| r approximates r .
Then the voltage gain can be simply calculated in the form:
g m RC r RC
Av 0
RS r RS r
i0 g m v g m ii r || RB
i0
Ai g m r || RB g m r 0
ii
vi RS ii
Ri r || RB r
ii
Also using the Thévenin equivalent we can simply determine the resistance
R0 RC
VCC VBE 12 6
IB 0.24mA
RB 470
Chair Professor Rui-Xiang Yin (South China University of Technology)
Chapter Eleven Small-Signal Model and Circuits
(2) The parameters of incremental model
I C q 1.2mA 0
gm 0.046 S ; r 1.075k
kT 25.8mV gm
(3) The incremental model of the circuit
Ri r || RB r 1.075k R0 RC 5k
r RB || RS r RB || RS
R0 RE ||
1 0 1 0
vi (t ) 10 2 sin 2000 t mV
The parameters of elements are shown in the circuit, and the forward
current gain of the transistor is 100.
AC (signal) equivalent
g m RL
Therefore, v0 g m RL (vs v0 ) vs
1 g m RL
RL
R0
1 g m RL
DC stable equivalent
DC equivalent circuit
In input-loop
RB 2
( RB1 || RB 2 ) I B VBE RE I E VCC
RB1 RB 2
Because IE=(1+F)IB, the base bias current, IB, can calculated
RB 2
VCC VBE
RB1 RB 2
IB
RB1 || RB 2 (1 F ) RE
Although the voltage divider biasing circuit is useful for single-stage amplifi
ers, it is rarely used for multiple-transistor low-frequency amplifiers. The re
quirement for coupling capacitors between one stage of amplification and t
he next and for bypass capacitors across each emitter resistor have two und
esirable effects: first, increased cost, and, second, a degrading of the respon
se of the amplifier to very-low-frequency signals.
As a result, biasing arrangements for amplifiers involving many transistors
often couple transistors directly 直接耦合 to one another, and then use over
all feedback to maintain operating-point stability.
In many cases, the feedback path incorporates capacitors in a fashion
analogous to the bypass capacitor of voltage divider biasing circuit in order
that the ac gain of the amplifier not be reduced by the DC feedback.
I E 2 RE 2 VBE
I B1
RB1
VCC ( I C1 I B 2 ) RC1 VBE
IE2
RE1 RE 2
1 2
i
D K v
GS VP v DS vDS voltage-controlled resistance region
2
for vGS VP vDS vGS VP
i K (v V ) 2 Active-gain (constant-current) region
D 2 GS P
for vGS VP vDS vGS VP
Note:
For N-channel device, pinch-off voltage is negative, VP<0, and iD>0 vDS>0.
For P-channel device, pinch-off voltage is positive, VP>0, and iD<0 vDS<0.
Note:
For N-channel device, threshold voltage is positive, VT>0, and iD>0 vDS>0.
For P-channel device, threshold voltage is negative, VT<0, and iD<0 vDS<0.
Therefore, to ensure the FET operates in active-gain region, we have to
properly bias the FET so that
vGS VP ; vDS vGS VP or vGS VT ; vDS vGS VT
VGS VG VRS I D RS
Recall the FET characteristic
VGS 2
I D I DSS (1 )
VP
where, IDSS is the drain current at VGS=0.
Draw a new load line with slope - l/(RD + RS) and produce a new region of
allowable operation on the new load line. If V'GS intersects this region, the
design is satisfactory. If not, we pick new values of V"GS that do intersect
the new allowed region of operation and calculate a new value of RS.
Then, the checking procedure is repeated.
(4) Limitation
VGS is always negative in this bias circuit, therefore, the self-bias circuit is
only suitable for JFET and depletion MOSFET.
Note: If a P-channel FET is used, the DC supply should be negative in the
Chair Professor Rui-Xiang Yin (South China University of Technology)
circuit.
Chapter Eleven Small-Signal Model and Circuits
2. Voltage divider biasing circuit 分压偏置电路
(1) Circuit structure
DC equivalent
The resistive small-signal device models discussed thus far provide both
simple and accurate representations of device behavior as long as the rate
of variation of the incremental signals is not too fast. At frequencies in the
high audio range and above, the speed of the device can become critical in
determining the actual response to an excitation. For example, the gate of a
MOSFET is actually connected to the channel through a capacitor. This
capacitor must be charged and discharged as the gate-to-source voltage is
changed. The charging and discharging introduce time delays and finite
response times.
If we are to represent accurately the time delays and their effects on signals,
we must allow for the inherent energy-storage and charge-storage features
of device operation. Large-signal models that include these capacitive
effects are called charge-control models, which is out of our course. For
small-signal applications, the capacitive effects can be represented by the
addition of constant, ideal capacitors into the small-signal model.
Chair Professor Rui-Xiang Yin (South China University of Technology)
Chapter Eleven Small-Signal Model and Circuits
11.4.1 The Hybrid-p Model of BJT
hybrid- model
rbb' —— Base ohmic resistance between the base terminal and the active base
region. Its value may vary between a few ohms and about 100 ohms d
epending on the specific transistor and on the operating point.
C ——The capacitance of the reverse-biased collector-base junction. As the coll
ector-base voltage changes, charge must be added or subtracted from t
he space-charge layer at the junction. Therefore, the space-charge layer
itself acts like a capacitance: a change in voltage must be accompanied
by flow of charge. The value of C ranges from about 2 pF in the very b
est high frequency transistors up to 5 or 10 pF in typical signal transisto
rs; it depends somewhat on the value of VCE, static operating point volta
ge between collector and emitter.
Chair Professor Rui-Xiang Yin (South China University of Technology)
Chapter Eleven Small-Signal Model and Circuits
C ——One contribution to C is the emitter-base junction capacitance, space-
charge capacitance, which behaves similar to the collector-base junction
capacitance. The second, and more important contribution to C at mod
erate and large values of IC is from the storage of excess minority carrier
s in the neutral-base region between the two junctions, stored-charge ca
pacitance. The sum of this stored-charge capacitance and the space-char
ge capacitance of the emitter-base junction. The value of C, depends ap
proximately, linearly on the transistor collector current with typical val
ues lying in the range of 10~100 pF.
r—— B-E junction forward-bias resistance, which depends on values of IC a
nd temperature.
gm—— Transconductance, which also depends on values of IC and temperature.
kT 1 q
r 0 ( ) g m ( ) | I C |
q | IC | kT
kT
where is the potential related to the temperature.
q
At the room temperature (27ºC) it is 25.8mV.
Chair Professor Rui-Xiang Yin (South China University of Technology)
Chapter Eleven Small-Signal Model and Circuits
11.4.2 An FET Incremental Model
hybrid- model
As the frequency is efficient higher, the currents through the capacitors are l
arger and v is smaller. Thus the output signal voltage may be smaller at the s
ame input signal voltage. Then the voltage gain becomes also smaller.
In the worst saturation, the frequency is infinite, the capacitors are equivalen
t to short-circuits. In this case, vis dropped to zero and the voltage gain also
becomes zero. The amplifier loses the amplification ability.
Exercises of Chapter 11