Fabrication of Silicon Diode
Fabrication of Silicon Diode
diode
Dr.Eman Salah Abass
Useful terminologies
• Oxidation : to form Silicon dioxide (SiO2) layers by heating silicon wafers to a high temperature (1000 to
1200◦C) in the presence of pure oxygen or water vapor
• Sputtering : depositing ترسيبconducting metal films (Thin layers of metal films) through evaporation by
heating the metal to its melting point in a vacuum.
• uses physical ion bombardment القصف األيونيto effect transfer of atoms from a source target to the wafer
surface .
• Chemical Vapor Deposition (CVD): to form Thin films of polysilicon, silicon dioxide, and silicon nitride ,
in which the material is precipitated ترسيبfrom a gaseous mixture directly onto the surface of the silicon
wafer .
• Ion Implantation: to form Shallow n- and p-type layers, where the wafer is bombarded by high-energy
(50-keV to 1-MeV) acceptor or donor impurity atoms generated by a high-voltage particle accelerator .
• Diffusion : to achieve a greater depth of the impurity layers by of the impurities at high temperatures,
typically 1000 to 1200◦C, in either an inert or oxidizing environment.
• Photolithography: To transfer The patterns from the mask to the wafer surface through the use of high-
resolution optical photographic techniques
Top view of the PN diode structure Photomicrograph of an
formed by fabrication steps actual diode.
• To build integrated circuits, localized n- and p-type regions must be
formed selectively in the silicon surface.
• Silicon dioxide, silicon nitride, polysilicon, photoresist, and other
materials can all be used to block out areas of the wafer surface to
prevent penetration of impurity atoms during implantation and/or
diffusion.
• Masks containing window patterns to be opened in the protective layers
are produced using a combination of computer-aided design systems
and photographic reduction techniques.
• The windows defined by the masks are cut through the protective layers
by wet-chemical etching using acids or by dry-plasma etching.
the fabrication steps of our first
solid-state device—a PN junction
diode
fabrication steps
• An aluminum layer is
evaporated onto the silicon
wafer and once again coated
with photoresist.
• A third mask and
photolithography step are used
to transfer The desired
metallization pattern to the wafer (g) Exposure of metal mask.
surface, and then the aluminum
is etched away wherever it is not
coated with resist.
fabrication steps