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From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 ISBN-13: 978-0078028182
ISBN-10: 0078028183
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Copyright Information and Permission Part I
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 Copyright Information and Permission: Part II
This Power Point presentation is a copyrighted supplemental material to the textbook
Principles of Electronic Materials and Devices, Fourth Edition, S. O. Kasap, McGraw-Hill
Education (USA), ISBN-13: 978-0078028182, ISBN-10: 0078028183 © 2018 McGraw-Hill
Education. Slides may be used in research seminars at research meetings, symposia and
conferences provided that the author, book title, and copyright information are clearly displayed
under each figure. It is unlawful to use the slides for teaching if the textbook is not a required
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 Important Note
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 Bonding Between Atoms

(a) Force vs. interatomic separation (b) Energy vs. interatomic

separation
Fig 1.3
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Metallic Bonding
The free electrons inside a metal can drift
under the action of the applied field and
give rise to a current. These free electrons
in the metallic bond are called conduction
electrons.
Metals are good electrical conductors
Metals are also good thermal conductors

Silver Copper Aluminum (98.5%)

© McGraw-Hill Education/Mark Dierker © McGraw-Hill Education/Stephen © McGraw-Hill Education/Ken Cavanagh
(mhhe022468.jpg) Frisch (MHED9000878.JPG)
(MHHE005312.JPG)

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Thermally Activated Processes: Diffusion

Diffusion of an interstitial impurity atom in a crystal from one void to a

neighboring void. The impurity atom at position A must posses an energy EA to
push the host atoms away and move into the neighboring void at B.
Fig 1.30

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Diamond Unit Cell

The diamond unit cell is cubic. The cell has eight atoms. Grey Sn (α-Sn) and the
Elemental semiconductors Ge and Si have this crystal structure.

Fig 1.35
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Zinc Blende Cubic Crystal Structure

The Zinc blende (ZnS) cubic crystal structure. Many important compound crystal
Structures have the zinc blende structure. Examples: AlAs, GaAs, Gap, GaSb, InAs, InP,
InSb, ZnS, ZnTe.
Fig 1.36

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Misfit and Threading Dislocations

(a) The epitaxial layer crystal has the same lattice constant (ae) as the substrate (as). The crystals are
matched and there are no defects at the interface. (b) The epitaxial layer has a larger lattice constant
than the substrate, ae > as, and misfit dislocations are created; otherwise, the epitaxial layer becomes
highly strained. The example here may be a Si substrate on which Si 1−xGex alloy is grown or a GaAs
substrate on which an InxGa1−xAs epilayer is grown.
Fig 1.52

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Surfaces of Solids

At the surface of a hypothetical two dimensional crystal, the atoms cannot fulfill their
bonding requirements and therefore have broken, or dangling, bonds. Some of the surface
atoms bond with each other; the surface becomes reconstructed. The surface can have
physisorbed and chemisorbed atoms.
Fig 1.55

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Metallic Glasses (or Glassy Metals) by Melt Spinning

Melt spinning involves squirting a jet of molten metal onto

a rotating cool metal drum. The molten jet is instantly
solidified into a glassy metal ribbon which is a few microns
It is possible to rapidly quench a molten metallic in thickness. The process produces roughly 1–2 km of
alloy, thereby bypassing crystallization, and forming a ribbon per minute.
glassy metal commonly called a metallic glass. The
process is called melt spinning. Photo courtesy of the Estate of Fritz Goro (Goreau).
Fig 1.60

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Amorphous Silicon

Silicon can be grown as a semiconductor crystal or as an amorphous semiconductor film.

Each line represents an electron in a band. A full covalent bond has two lines, and a
broken bond has one line.
Fig 1.61
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Thin Films of Polycrystalline Diamond

Left: A polycrystalline diamond film on the (100) surface of a single crystal silicon wafer
where the growth chemistry has been changed to produce predominantly square-faceted
(100) diamond crystallites. The film thickness is 6 microns and the SEM magnification is
6000.
Right: A 6-micron-thick polycrystalline CVD diamond film grown on a single crystal silicon
wafer where the crystallites have random orientation. SEM magnification is 8000.
(Courtesy of Professor Paul May, The School of Chemistry, University of Bristol, England. Used with permission.)

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Pb-Sn Binary Alloys: Solders
Pb (lead) Sn (Tin)
FCC Tetragonal
a = 0.495 nm a = b = 0.583 nm
Tm = 327.5 C c = 0.318 nm
Winters© McGraw-Hill Tm = 231.9 C
Education/Charles D. Winters © McGraw-Hill
Education/Charles D. Winters

60-40 Solder
Tm = 183 – 188 C
Solder

Photo by S. Kasap
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 The Drude Model

Paul Drude (1863–1906)

Courtesy of AIP Emilio Segrè Visual Archives, Physics Today Collection.

Drift of electrons in a conductor in the presence of an applied electric field.

Electrons drift with an average velocity vdx in the x-direction. (Ex is the
electric field.)
Fig 2.1
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Drift of one electron in a field

The motion of a single electron in the presence of an electric field E. During a time
Interval ti, the electron traverses a distance si along x. After p collisions, it has drifted a
Distance s = x.
Fig 2.4

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Resistivity vs Temperature

The resistivity of copper from lowest to highest temperatures (near melting temperature, 1358 K) on a log-log plot.
Above about 100 K, ρ  T1.16 (approximately   T), whereas at low temperatures, ρ  T5 and at the lowest
temperatures  approaches the residual resistivity ρR. The inset shows the ρ vs. T behavior below 100 K on a linear
plot (ρR is too small on this scale). (Data combined from various sources to generate a representative curve. Lowest
residual resistivity from Basinski and Dugdale's 1985 work.)
Fig 2.8
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
Temperature Coefficient of Resistivity Depends on the Reference Temperature

1   
0   
 0  T  T T0
 at T = T0 Gradient at T = T0

Use  at 293 K in Use  at 273 K in CRC

CRC Handbook Handbook

1    1   (T1 )   0 
0      
 0  T  T T0  0  (T1  T0 ) 
Use 293 K Use 273 K

1 16.78 n m  15.43 n m 
 273   
(15.43 n m)  (293 K  273 K ) 
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Strain Gauges

A commercial strain gauge by Micro- Measurements (Vishay Precision Group). This gauge has a
maximum strain range of ±5%. The overall resistance of the gauge is 350 W. The gauge wire is a
constantan alloy with a small thermal coefficient of resistance. The gauge wires are embedded in
a polyimide polymer flexible substrate. The external solder pads are copper coated. Its useful
temperature range is –75 C to +175 C. (Photo by S. Kasap)

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Hall Effect in Semiconductors

Hall effect for ambipolar conduction as in a semiconductor where there

are both electrons and holes. The magnetic field Bz is out from the plane of the paper. Both
electrons and holes are deflected toward the bottom surface of the conductor and
consequently the Hall voltage depends on the relative mobilities and concentrations of
electrons and holes.
Fig 2.27
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Resistivity of Thin Films

TEM (transmission electron

microscope) image of an annealed
polycrystalline Cu thin film of
thickness 41.7 nm, encapsulated in
SiO2. The films structure is
composed of grains with an average
size 87.7 nm. The resistivity of this
film is 30 nΩ m, higher than the
bulk resistivity of Cu (17 nΩ m).
Courtesy of Tik Sun and Bo Yao.

(a) Grain boundaries cause scattering of the electron and therefore add to the
Resistivity by the Matthiessen’s rule.
(b) For a very grainy solid, the electron is scattered from grain boundary to grain boundary
and the mean free path is approximately equal to the mean grain diameter.

Fig 2.33
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
X-rays are photons
X-ray image of an American one-cent
coin captured using an x-ray a-Se
HARP camera. The first image at the
top left is obtained under extremely
low exposure and the subsequent
images are obtained with increasing
exposure of approximately one order
of magnitude between each image.
The slight attenuation of the X-ray
photons by Lincoln provides the
image. The image sequence clearly
shows the discrete nature of x-rays,
and hence their description in terms
of photons.

SOURCE: Brian J. M. Lui, D. C. Hunt, A. Reznik, K.

Tanioka, and J. A. Rowlands, “X-ray imaging with
amorphous selenium: Pulse
height measurements of avalanche gain
fluctuations”, Medical Physics, 33, 3183-3192
(2006); Figure 3.

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Diffraction of Electrons

Left: Circular bright rings make up the diffraction pattern obtained when
an electron beam is passed through a thin polycrystalline aluminum
sheet. The pattern results from the wave behavior of the electrons; the
waves are diffracted by the Al crystals.
Center and Right: A magnet brought to the screen bends the electron
paths and distorts the diffraction pattern. The magnet would have no
effect if the pattern was due to X-rays, which are electromagnetic waves.
Courtesy of Farley Chicilo

Fig 3.13
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Diffraction of Electrons

A comparison of an actual electron diffraction ring pattern from an Al

sample (left) with the diffraction pattern that would be obtained from
an X-ray beam of wavelength 0.0123 nm (right). The electron kinetic
energy was 10 keV, which corresponds to the same wavelength.
(Photo by S. Kasap)

Fig 3.14
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Wave-Particle Duality

Drawing by SK

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Magnetic Dipole Moment of the Electron

(a) The orbiting electron is equivalent to a current loop that behaves like a bar magnet.
(b) The spinning electron can be imagined to be equivalent to a current loop as shown.
This current loop behaves like a bar magnet, just as in the orbital case.
Fig 3.33
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
Characteristic emission wavelengths from gas discharge tubes

Note: Emission may appear white

due to several wavelengths.

Hydrogen gas Nitrogen gas Mercury vapor

(magenta) (blue)

Helium gas Neon gas Argon gas Krypton gas Xenon gas
(red) (violet/lavender)
© McGraw-Hill Education/Mark Dierker
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Energy diagram for the Er3+ ion in the glass fiber

Energy diagram for the Er3+ ion in the glass fiber medium and light amplification by
Stimulated emission from E2 to E1.
Dashed arrows indicate radiationless transitions (energy emission by lattice vibrations).
Fig 3.48
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Energy band diagram of a semiconductor

Energy band diagram of a semiconductor. CB is the conduction band and VB is the valence
band. AT 0 K, the VB is full with all the valence electrons.

Fig 4.19
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Density of States

(a) In the solid there are N atoms and N extended electron wavefunctions from 1 all the way
to N. There are many wavefunctions, states, that have energies that fall in the central regions
Of the energy band.
(b) The distribution of states in the energy band; darker regions have a higher number of
states.
(c) Schematic representation of the density ofFig
states
4.23 g(E) versus energy E.
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Soft X-Ray Emission

= nE

Emission of soft X-rays from a sodium sample that is bombarded by electrons (in
a suitable high vacuum). An impinging electron knocks out an electron from an
inner core shell (L-level). A conduction electron falls down and fills this space
and emits an X-ray photon. The X-ray emission intensity is proportional to the
number of conduction electrons available, f(E)g(E) = nE, and to hf3, a quantum
mechanical transition probability. The vertical axis has been scaled to make the
peak 100 percent
Data extracted from Cady, W.M. and Tomboulian D.H., Physical Review 59, 381, 1941, Table 1.

Fig 4.30
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Thermal Conductivity k
Phonons transfer heat Phonons transfer heat Electrons transfer heat

Silver
Diamond Si crystal and wafers
© McGraw-Hill Education/Mark Dierker
Full-length view of two cut diamonds Courtesy of SunEdison Semiconductor (mhhe022468.jpg)
© McGraw-Hill Education (mhhe017428-S.jpg)

k (W K-1 m-1) Energy transfer by

Diamond (Insulator) 1000 Phonons
Silicon (Semiconductor) 148 Phonons
Zirconia, ZrO2 (Insulator) 2.7 Phonons
Silver (Metal) 429 Electrons
Notice the large variation in k for insulators

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 n-Type Silicon

Arsenic-doped Si crystal.
The four valence electrons of As allow it to bond just like Si, but the fifth electron is left
orbiting the As site. The energy required to release the free fifth electron into the CB is
very small.
Fig 5.9
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Direct and Indirect Recombination

(a) The electron energy (E) versus electron’s crystal momentum (ħk) in a direct bandgap semiconductor. Each
circle represents a possible state, an electron wavefunction (y), a solution of Schrodinger’s equation in a
crystal, with a wave vector k. These solutions fall either into the CB or the VB; there are no solutions within
the bandgap. The sketches are highly exaggerated because the circles are so close that they form a
continuous energy versus momentum behavior. (b) Energy versus crystal momentum for an indirect bandgap
semiconductor such as Si.
Fig 5.23
From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
 Schottky Junction

Before

After

Formation of a Schottky junction between a metal and an n-type semiconductor when

m > n .
Fig 5.40
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Ideal pn Junction

(b)

(c)

Fig 6.1
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Short Diode

x'

Minority carrier injection and diffusion in a short diode.

Fig 6.5
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 pn Junction Band Diagram: Forward Bias

Energy band diagrams for a pn junction under (a) open circuit and (b) forward bias
Fig 6.11
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Reverse Bias

(a) (b)
Reverse biased pn junction. (a) Minority carrier profiles and the origin of the reverse
current. (b) Hole PE across the junction under reverse bias

Fig 6.8
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Junction Field Effect Transistor (JFET)

(a) The basic structure of the junction field effect transistor (JFET) with an n-channel. The two p+
regions are electrically connected and form the gate.
(b) A simplified sketch of the cross section of a more practical n-channel JFET
Fig 6.55
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Enhancement MOSFET

Below threshold VGS < Vth and

VDS > 0

Above threshold VGS > Vth

and VDS < VDS(sat)

Fig 6.64
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 III-Nitride
LEDs

Shuji Nakamura, obtained his PhD from the University of

Tokushima in Japan, and is currently a Professor at the
University of California at Santa Barbara and the Director of
Solid State Lighting and Energy Center. He shared the 2014
Multiple quantum well III-
Nobel prize with Isamu Akasaki and Hiroshi Amano “for the Nitride based LED
invention of efficient blue light-emitting diodes which has
enabled bright and energy-saving white light sources.” He is
holding a blue laser diode that is turned on. Courtesy of
Randy Lam, University of California, Santa Barbara.

Fig 6.28
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Solar Cells

This is Solar Impulse, a plane powered by solar cells.

Courtesy of Solar Impulse SA, Switzerland

Solar cell inventors at Bell Labs (left

to right): Gerald Pearson, Daryl
Chapin, and Calvin Fuller. They are
checking a Si solar cell sample for the
amount of voltage produced (1954).
© Nokia Corporation.

Fig 6.37
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Useful Photogeneration Volume is Lh + W + Le

Iph
An np junction solar cell in short circuit. Photogenerated carriers within the
volume Lh + W + Le give rise to a photocurrent Iph. The variation in the
photogenerated EHP concentration with distance is also shown where α is the
absorption coefficient at the wavelength of interest.
Fig 6.39
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 An inverted pyramid textured surface

An inverted pyramid textured surface substantially reduces reflection losses and increases
absorption probability in the device.

Fig 6.46
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Enhancement MOSFET

Above threshold VGS > Vth

and VDS = VDS(sat)

Above threshold VGS > Vth

and VDS > VDS(sat)

Fig 6.64
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Electrolytic Polypropylene Ceramic

Polypropylene Polyester

Electrolytic
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Ceramic

Polypropylene
Polypropylene
Polyester Polyester Polyester Electrolytic
Ceramic

Capacitors with energy in the range 100 to 300 mJ

Polyeste Mica Tantalum

r

Polypropylene
Ceramic

Capacitors with energy in the range 0.8 mJ to 2 mJ

0.22 F 0.047 F 0.022 F

5.5 V 5.5 V 5.5 V

1F
6.3 V
4.7 F
50 F 2.5 V
350 F 2.7 V
2.7 V All photos by S. Kasap, 2016
Supercapacitors with energy in the range to 0.3 J to 1.27 kJ

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 A Dielectric Inserted into a Capacitor

(a) Parallel plate capacitor with free space between the plates.
(b) As a slab of insulating material is inserted between the plates, there is an external current
flow indicating that more charge is stored on the plates.
(c) The capacitance has been increased due to the insertion of a medium between the plates.
Fig 7.1
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 The Origin of Electronic Polarization

b = Restoring force constant

Electronic polarization resonance
frequency

Classical electronic polarizability Atomic radius

Fig 7.3
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Frequency Dependence of Dielectric Properties

Relaxation

Resonance

The frequency dependence of the real and imaginary parts of the dielectric constant in the
presence of interfacial, orientational, ionic, and, electronic polarization mechanisms.

Fig 7.15
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Debye Equations
[ r (0)  1] [ r (0)  1]
 r  1    
1  ( ) 1  ( )
2 r 2

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Electrical Treeing Breakdown in a High Voltage Coaxial

(a) A schematic illustration of electrical treeing breakdown in a high voltage coaxial

cable which was initiated by a partial discharge in the void at the inner
conductor - dielectric interface.
(b) A schematic diagram of a typical high voltage coaxial cable with
semiconducting polymer layers around the inner conductor and around the outer
surface of the dielectric.

Fig 7.28
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
Electrical Branch Trees in Dielectric Breakdown

Left: An electric tree spreading from a needle electrode to the counter electrode in
cross-linked polyethylene (XLPE) insulation under an ac voltage of 11 kV (rms) after 20
minutes of voltage application. These types of open tree-like structures are usually
called branch trees. Notice that a tree brunch just reaches the counter electrode.
Right: About 20 seconds later, a dielectric breakdown ensues with a large discharge
current along a thick (about 0.1 mm thick) conducting channel (black).

Courtesy of Xiangrong Chen, Xi’an Jiaotong University, China.

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Super vs Electrolytic Capacitors

Maximum 50 F, 2.7 V
350 F, 2.7 V 5,500 μF, 350 V
energy stored in 1,275 J 336 J 182 J
Joules

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Piezoelectric Effect

The piezoelectric effect.

(a) A piezoelectric crystal with no applied stress or field.
(b) The crystal is strained by an applied force that induces polarization in the crystal and generates surface charges.
(c) An applied field causes the crystal to become strained. In this case the field compresses the crystal.
(d) The strain changes direction with the applied field and now the crystal is extended.
Fig 7.40
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Dielectric Mixtures
And Heterogeneous Media

Heterogeneous dielectric media examples

(a) Dispersed dielectric spheres in a dielectric matrix.
(b) A heterogeneous medium with two distinct phases I and II.
(c) Series mixture rule.
(d) Parallel mixture rule.
Fig 7.61
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Ampere’s Law

Ampere’s circuital law

Fig 8.9
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Ferromagnetic Materials

In a magnetized region of a ferromagnetic material such as iron all the magnetic moments
are spontaneously aligned in the same direction.
There is a strong magnetization vector M
even in the absence of an applied field

Fig 8.15
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Inductors use soft magnetic materials

0.3 mH (0.41 W) 0.51 mH (6.5 W) 12.5 mH (14 W)

0.01 mH
(3 W)

10 mH (23.2 W)

L (r)
Photo by SK

Inductance, L Resistance, r
Resistance of windings and
ferrite losses
Simplest equivalent circuit with losses
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Rare-Earth Magnets

Rare-earth magnet based DC motor. Neodymium magnet based speakers.

Courtesy of Maxon Precision Motors, Inc. Courtesy of Eminence Speaker, LLC.

Neodymium magnet based earphones

Photo by S. Kasap

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Pauli Spin Paramagnetism

Pauli spin paramagnetism in metals due to conduction electrons

Fig 8.44
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Giant Magnetoresistance (GMR)

A highly simplified view of the principle of the giant mangetoresistance effect.

(a) The basic trilayer structure.
(b) Antiparallel magnetic layers with high resistance RAP.
(c) An external field aligns layers, parallel alignment has a lower resistance RP.
Fig 8.47
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 A permanent magnet with a small air gap

Magnet with air gap. Point P is the operating point of the magnet and determines
the field inside the magnet and in the air gap, that is Bg'. The corresponding
magnetizing field is Hm'

Energy density in the gap is proportional to BH, and for a given geometry and
size of gap, this is a maximum at a particular magnetic field Bm* or Bg*

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Definitions in Magnetic Data Storage

Courtesy of Kazuhiro Hono

(a) A simplified view of longitudinal recording track with

magnetized crystalline grains in a track. σ is the rms variation in
the position of the boundary between two neighboring bits.
(b) The definitions of λ, w and t involved in a bit-track with a
magnetized one-bit volume in gray.
(c) Transmission electron microscope image of a granular magnetic
thin film medium for high density storage.
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Type I and Type II superconductors

Characteristics of Type I and Type II superconductors. B = µoH is the

applied field and M is the overall magnetization of the sample. Field inside the
sample,
Binside From
= µPrinciples
oH + µ M, which is zero only for B < Bc (Type
ofoElectronic Materials and Devices, Fourth Edition, S.O. Kasap
I) and B < Bc1 (Type II).
(© McGraw-Hill Education, 2018)
 A high temperature superconductor (HTS) power cable

Liquid N2
Hollow
former
HT
S
Dielectri
HTc

Liquid
DielectriS
HTc
DielectriS N2
Copperc
screen
Inner cryostat wall
Insulation

A high temperature superconductor (HTS) power cable for use at 10 kV and 2,300
A. The HTS is Bi223.. The cable has been installed
in the city center of Essen (Germany) by a German utility company RWE
Deutschland; and it has been in use since 2014. The superconductor
shown is manufactured by Nexans.
© Reuters/Alamy Stock Photo

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Fresnel's Equations

Light wave traveling in a more dense medium strikes a less dense medium.
The plane of incidence is the plane of the paper and is perpendicular to the flat interface between
the two media. The electric field is normal to the direction of propagation. It can be resolved into
perpendicular (⊥) and parallel (||) components.
Fig 9.11
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Dielectric mirrors
A dielectric mirror consists of a stack of dielectric layers of alternating refractive
indices: n1|n2|n1|n2|n1|n2|n1|n2| ….

The thickness of each layer is a quarter of wavelength or layer wherelayer is the

wavelength of light in that layer or o/n where o is the free space wavelength at
which the mirror is required to reflect the incident light and n is the refractive
index of the layer.

Fig 9.16
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Lattice Absorption: Reststrahlen Absorption

Lattice absorption through a crystal. The field in the EM wave oscillates the ions,
which consequently generate "mechanical" waves in the crystal; energy is thereby
transferred from the wave to lattice vibrations
Fig 9.21
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Optical Activity

An optically active material such as quartz rotates the plane of polarization

of the incident wave: The optical field E rotated to E'.
If we reflect the wave back into the material, E' rotates back to E.

Fig 9.40
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Luminescent Emission

Optical absorption generates an electron and hole pair (EHP).

Both carriers thermalize. There are a number of recombination processes via a dopant that can
result in a luminescent emission.
Fig 9.29
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 The light from an LCD display is linearly polarized

The light from an LCD display is linearly polarized. A number of square

polarizers have been placed on the screen of this laptop computer at different
angles until the light is totally extinguished. There are five polarizers placed on
the screen at different angles.
Photo by S. Kasap

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
Sample Slides

The End
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From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)