Module 1

BJT – Bipolar Junction Transistor

Prof. Dattatraya Shinde

Mechatronics Department
Terna Engineering College
 Course Objectives
1. To understand working and performance of
electronic devices
2. To understand applications of electronic
devices.
3. To teach fundamental principles of digital
circuit design.
4. To impart the testing knowledge of digital
circuits.
 Course Outcomes
Learner will be able to…
1. Illustrate working of Transistors & its applications.
2. Describe several JFET applications including switch &
amplifiers.
3. Describe the number system and operations of
logical gates
4. Design combinational digital logic circuits
5. Design Sequential digital logic circuits
6. Describe the testing technologies in digital
electronics.
 Introduction
• In 1951, William Schockley, American physicist and
inventor, invented the first junction transistor
• A semiconductor device that can amplify (enlarge)
electronic signals such as radio and television
signals.
• Today we have Integrated circuit (IC), a small device
that contains thousands of miniaturized transistors.
• Because of the IC, modern computers and other
electronic miracles are possible
 Introduction
• Bipolar
• It contains electrons &
holes
• NPN / PNP Type
• Three Terminals –
Collector, Base &
Emitter
• Emitter- Heavily Doped
• Base – Lightly doped
• Collector – Medium
doped
 Introduction
• Transistor is like a back to back
diode
• The lower diode is called the
emitter-base diode, or simply
the emitter diode.
• The upper diode is called the
collector-base diode, or the
collector diode.
 Depletion Layer
• N & P region are repulsive in
nature
• Hence the free electrons in the n
regions will spread in all directions.
• Some of the free electrons in the
N region will diffuse across the
junction and recombine with the
holes in the P region.
• Result is depletion layer formation
• Depletion layer has barrier
potential of 0.7V for silicon
material at 25 degree
Biased Transistor
 Biased Transistor
• Emitter has free electrons and it is heavily
doped
• When supply is given it emits electrons o the
base
• The lightly doped base passes emitter-injected
electrons on to the collector.
• The collector is so named because it collects
or gathers most of the electrons from the base
 Biased Transistor
• The left source VBB of
forward-biases the emitter
diode,
• Right source VCC reverse-
biases the collector diode.
• Forward-biasing the emitter
diode and reverse-biasing
the collector diode produce
the most useful results.
 Base Electrons
• If VBB is greater than the
emitter-base barrier
potential (0.7V) then
emitter electrons will enter
the base region
• Ideally they can flow in
either of two directions.
• First ?
• Second ?
Collector Electronics
Transistor Currents
• Emitter has largest current
• Base Current is very small & if
compared with collector
current then less than 1% of
collector current
• Collector current is as large as
Emitter current
 Equations
• By Kirchhoffs law

• But Base current is too small than Collector current, hence we

can say that Emitter current and collector current are
approximately same
 Alpha
• Alpha: Ratio of collector current to Emitter
current

Since Collector current and Emitter

current are about to equal, Alpha is always
less than one.
• Beta : Ratio of collector current and Base
current

• It is also called as Current Gain

• For low-power transistors (under 1 W), the
current gain is typically 100 to 300.
• High-power transistors (over 1 W) usually have
current gains of 20 to 100.
Problems
 Transistor Connections
• CE (common emitter) – Mostly used
• CC (common collector)
• CB (common base).
 Common Emitter
• The common or ground side of each voltage source is connected to the
emitter

• Two loops – Base loop & Collector loop

 Base Loop
• Source VBB forward-biases the emitter diode
with RB as a current-limiting resistance.
• By changing VBB or RB, we can change the
base current.
• Changing the base current will change the
collector current.
• It means that a small current (base) controls a
large current (collector)
 Collector loop
• source voltage VCC reverse-biases the
collector diode through RC.
• The supply voltage VCC must reverse-bias the
collector diode as shown, or else the transistor
won’t work properly.
• the flow of collector current in the right loop
produces a voltage across the collector
resistor RC
Base Curve
• Base curve is plotting of
VBE vs IB

• At start IB is zero upto

0.7 VBE

• After 0.7 V, Current

will be introduced.
Collector Curve
• Voltage across Base loop should
be more than 0.7 V
• We can fix the base current and
will be able to see the
characteristic of Collector
• Collector curve is plotting
Collector current against Voltage
across Vce
• We can vary VBB and VCC to
produce different transistor
voltages and currents.
• By measuring IC and VCE, we can
get data for a graph of IC versus
VCE
 Collector Curve

• Assume IB is 10uA & it is constant

• Vary VCC and measure IC and VCE.
 Observations
• Collector current is zero when VCE is zero
• When VCE increases from zero, the collector current rises
sharply
• When VCE is a few tenths of a volt, the collector current
becomes almost constant and equal to 1 mA
• After the collector diode becomes reverse biased, it is
gathering all the electrons that reach its depletion layer
• The collector can collect only those free electrons that the
emitter injects into the base and it depends upon base circuit.
• Hence there is constant collector current between a VCE of less
than 1 V to a VCE of more than 40 V.
 Breakdown voltage
• AS per collector curve, if VCE is more than 40V, hen
transistor will no function properly
• This voltage is called Breakdown voltage
• In Industry, one of the maximum ratings to look for
on a transistor data sheet is the collector-emitter
breakdown voltage VCE(max)
 Collector Voltage
• By Kirchhoff's Law,
VCE= VCC-ICRC

• Power Dissipation
PD= VCE IC
 Regions for operation

• Active region
• Saturation region
• Breakdown region
Collector Curve Set
 Cut off region
• Cutoff Region has an unexpected curve
• Base current is zero, but there still is a small collector current.
• On a curve tracer, this current is usually so small that you
cannot see it.
• Why does the collector cutoff current exist?
• Because the collector diode has reverse minority-carrier
current and surface-leakage current.
• In a well- designed circuit, the collector cutoff current is small
enough to ignore. For instance, a 2N3904 has a collector
cutoff current of 50 nA. If the actual collector current is 1 mA,
ignoring a collector cutoff current of 50 nA produces a
calculation error of less than 5 percent.
Example
Common Base Configuration
- Base Terminal is
common
- Input : VEB, IE

- Output: VCB, Ic
Common Base Configuration
Common Base Configuration
Common Base Configuration
IE = I C + I B

Current Gain = IC/IE

= Alpha
Common Base (PNP) Configuration
IE=IB+IC
Input Characteristics
- It is like Diode
Characteristics
- Input Impedance
is very low
- It is in Ohms
Output Characteristics
Common Collector Characteristics
Input Characteristics
Output characteristics
 Transistor Biasing

• It is the process of setting Transistors DC Voltage or

current sources to accurate level so that AC signal
can be amplified
• Biasing is used for amplification purpose
• It has types like Base biasing, Emitter biasing,
Voltage divider biasing etc.
• Generally Base biasing is used in switching circuits
and Emitter biasing is used in Amplification
 Need of Transistor Biasing

• It is used for amplification purpose

• For linear amplification, transistor should have a
proper operating point
• Proper Operating point (Q) requires bias resistors
and load resistors
• All above things depends upon base current,
collector current & collector voltage.
• So biasing can be done with the transistor terminals
so that it can operate in steady state
 Q Point

• Quiescent Operating Point

• It is the operating point which indicates correct
Collector voltage & collector current for amplification
of AC signal
• Q point in active region is suitable for amplification
• Q point near to saturation region or Breakdown
region is responsible for signal distortion
Q Point
Fixed Bias Configuration
• IB = (VBB-VBE)/RB ---------------1

• IC = Bita (IB)==============2

• VCC- VRC-VCE=0
VCE = VCC - VRC---------------3
VCE = VCC – ICRC

Ic = (VCC-VCE)/Rc
Ic max = Vcc/Rc - 4

Vce max = Vcc

 Steps for amplification

• Bias the transistor with Stable Q point

• Provide a small AC voltage into he base
• AC Voltage at output (Collector) is
produced
• Voltage can be increased/decreased by
Current Gain