Analog Electronic Circuit Design

Course Code: 15 EC 2103 ---- CO2

Dr. G V Subbarao
Professor
Department of Electronics and Communication Engineering
 QUIZ
• How are you listening the voice of your professor if it low?

• What is the mechanism that helps in boosting the voice?

• Is it possible to control the ckt current using a diode?

• How does a water tap work?

• Can you have an electronic control to limit current though the

diode, similar to tap?
• If you want to get such a control what should we do?

• Do you know any

Dr. transistor?
G V Subbarao [email protected]
 Transistor
Types : N-P-N & P-N-P

Modes of Operation : CB, CC, CE

Width of Regions : Collector > Emitter > Base

Concentration of Regions : Emitter > Collector > Base

N P N Transistor P N P Transistor

Dr. G V Subbarao [email protected]

 Regions of Operation

Mode Emitter Base Jn Collector-Base Jn

Active Forward Reverse
Cutoff Reverse Reverse
Saturation Forward Forward

Dr. G V Subbarao [email protected]

 Quiz
1. What is the name of sandwiched layer in BJT?

2. Is BJT a current control device? Yes/No

3. Doping of Emitter is more and width of collector is more in BJT.

Yes/No
4. Base is narrower and very lightly doped. Why?

5. Why is it named as a bipolar device?

6. Is collector current more than that of the base? Yes/No

7. Suggest an electronic switch with 3 terminals and draw its transfer

characteristic.

Dr. G V Subbarao [email protected]

 CB Configuration

Base- Emitter Jn Forward biased and Base-Collector Jn Reverse biased

Draw CE and CB Configurations…..

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Operation of BJT-CB

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 Current Components
Base Transportation factor β =InC/InE
Emitter injection Efficiency γ =InE/IE

I nE I nC

I nB

I PE
I CBO
IC= ICBO +InC =α IE+ ICBO

Dr. G V Subbarao [email protected]

 Characteristics
Base width modulation or Early Effect or Punch through ?

VBE
VT VCE
Ic =I0 e (1+ )
VA

Discuss…What happens with an Increase in VCB ?

I/P Characteristic O/P Characteristic
Dr. G V Subbarao [email protected]
CE Configuration
Try to draw the CE Ckt…..

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 Estimate Collector current in terms of I B and ICBO

IC =αI E +ICBO
IC -ICBO
=I B +IC
α
 α   1 
IC =   IB +   ICBO
 1-α   1-α 
IC = I B +ICEO
Discuss.. Why CE configuration is mostly used?
Gives more power gain
R out to Rin Ratio is small and useful for coupling
Assignment: Compare various features of CE, CB and CC Configurations
Dr. G V Subbarao [email protected]
 Characteristic comparison
S No. Characteristics CB CE CC

Input Dynamic Very Low Low Very High

1.
Resistance (less than 100 ohm) (less than 1K) (750K)
Output dynamic Very High High Low
2.
resistance (less than 1M) (less than 45K) (50 ohm)

High Very High

3. Current Gain Less than 1
(100) (greater than 100)

4. Leakage Current Very Small Very Large Very Large

5. Voltage Gain About 150 About 500 Less than 1
6. Power Gain Medium Highest Medium
Phase relation
7. In Phase Out of Phase(180¤) In Phase
b/w i/p and o/p
Dr. G V Subbarao [email protected]
 CE configuration - Characteristics
VBE > 0.5; VCE< 0.3 v
IC<β IB Type Si Ge
VCE sat 0.2 0.1
VBE sat 0.8 0.3
VBE act 0.7 0.2
VBE > 0.5; VCE> 0.3v VBEcutin 0.5 0.1
IC = β I B VBECutoff 0 -0.1

Cut Off VBE < 0.5; VCE=VCC

 QUIZ
1. Current gain in CE amplifier is more than CB. Yes/No
2. Output resistance of CE amplifier is more than that of CB. Yes/No
3. Early effect is observed in saturation region of BJT characteristics Yes/No
4. What is the range of the input impedance of a common-base configuration?
A. A few ohms to a maximum of 50Ω B. 1 k to 5 k Ω
C. 100 k to 500 k Ω D. 1 M to 2 M Ω
5. Phase difference between i/p and o/p in CB amplifier is.……………

6. My friend will always oppose my decisions. I can model this using……

Amplifier.
a. CB b. CE c. CC d. None of the above
7. Which region of o/p characteristics can be used for amplifier applications?

Dr. G V Subbarao [email protected]

 Load line
Discuss the influence of load on transistor operation in the ckt

Develop the o/p loop equation…

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 Effect of Operating Point
What is operating point?

What happens with AC?

What is the effect of Load?

What is the effect Vcc?

Guess the o/p when operating point lies in Cut off
region………!
The goal of amplification in most cases is to increase the
amplitude of an ac signal without altering it.
Dr. G V Subbarao [email protected]
 Need for Biasing
• Faithful amplification through proper biasing

• Avoid Thermal runaway

• Stabilization against component variations

1. It should ensure proper zero signal collector current.

2. It should ensure that VCE does not fall below 0.5 V for Ge
transistors and 1 V for silicon transistors at any instant.
3. It should ensure the stabilization of operating point.
Dr. G V Subbarao [email protected]
 Fixing the Operating Point
• Stabilization techniques
- Biasing…. Stability Factors
I C I C I C
S= S'= S''=
I CO VBE 

Ic = β I B +ICEO  β I B +(1+ ) ICBO

(1+ )
S
I B
1 
I C
• Compensation techniques

Dr. G V Subbarao [email protected]

 Biasing Methods

• Fixed Bias

• Collector to base resistor

• Voltage Divider Bias

Dr. G V Subbarao [email protected]

 Fixed Bias
Vcc
Vcc -VBE Vcc -VCE =IC R C  IC 
=I B RC
RB
(1+ ) I C 
S  (1+ ) S' 
I B
1  VBE RB
I C
 Vcc -VBE 
Ic = β I B +(1+β) I CBO  β    (1+β) I CBO
 RB 
I C Ic
S ''   I B +ICBO 
 β
Discuss the
1. Effect of Temperature
2. Effect of transistor replacement
Dr. G V Subbarao [email protected]
Voltage Divider Bias

Dr. G V Subbarao [email protected]

Dr. G V Subbarao [email protected]
 Design of a CE amplifier
Design a CE amplifier with VCC= 12V, IC=4mA,
β = 100.
Assumptions:
VE=VCC/10; VCE=VCC/2; IR2= 9 IB; IR1 =10 IB ;
XCE= RE/10
V
V CC=
VRE
Rc
B ==–V
VBCC
9.I
V –V
/R10
B–10.I
CC V12
B= R
2 CE- / 10 = 1.2V
1 =0
RE RRC21 =R
= E1.2k
4.7
1.2/4=
k .33k
25.25k

CB = CC = 0.1 μF XCE = 1 / 2π f CE ; XCE = RE/10

Dr. G V Subbarao [email protected]

h- parameter model of BJT

Dr. G V Subbarao [email protected]

 Necessity of h parameter model
h – parameters are
– Real numbers up to radio frequencies.
– Easy to measure.
– Determined from the transistor static
characteristics.
– Convenient to use in circuit analysis and design.
– Easily convertible from one configuration to other.
– Supplied by manufactories.

Dr. G V Subbarao [email protected]

 h parameter model

v1  f1 i1 , v2   v1  h11i1  h12 v2  hii1  hr v2 ........... 1

i2  f 2 i1 , v2   i2  h21i1  h22 v2  h f i1  ho v2 ...........  2 

Dr. G V Subbarao [email protected]

Transistor Amplifier

Dr. G V Subbarao [email protected]

 Amplifier Analysis
i2 h f i1  ho v2 hf
Ai    h f  ho RL A i  A i =
i1 i1 1  ho RL
v1 hi i1  hr v2 h f hr
Zi    hi 
i1 i1 YL  ho
v2 Ai RL
Av  
v1 Zi
i2 hr h f
Yo   h0 
v2 Rs  h1
v2 Av Ri
A vs  
vs Z i  Rs
i2 Ai Rs
A is  
is Z i Dr.RGs V Subbarao [email protected]
 Compute Ai, Av, Zi and Zo for
the amplifier shown in the fig.
(hie=1.1KΩ,hfe=50,hre=2.5x10-4,
hoe=24µ℧)

Compute Ai, Av, Zi and Zo for the

amplifier shown in the fig. hic=1.1KΩ,
hfc =-51, hrc=1, hoc=25µ℧.

Dr. G V Subbarao [email protected]

 Amplifier Analysis Using h parameters
Procedure:

1. Replace all DC sources with short circuit/internal resistances.

2. Replace all coupling capacitors with short circuit(AC only

model).

3. Replace Transistor with equivalent circuit of h parameter

model.

4. Determine the amplifier parameters using analysis.

Dr. G V Subbarao [email protected]
Simplify the circuit and determine amplifier parameters using
h parameter model, If
R s =1KΩ; R 1 =50KΩ; R 2 =2KΩ;R c =1KΩ;R L =1.2kΩ and
h f = 50;h i =1.1kΩ; h r =2.5X10 4 ;h o =25X10 6 A / V

Dr. G V Subbarao [email protected]

 h f
R L  545.45;
'
Ai =  49.32
1  ho R L
'

Ri  1093 ; R 'i  Ri //R1 //R2  696.9 ;

Ai R ' L
Av =  24.61
Ri
hr h f
Y0  h0  '  1.7889 X 105 ; R ' s  R s // R 1 // R 2
R s  hi
1
Z0   540
Y0
Dr. G V Subbarao [email protected]
 Hybrid Pi model

Dr. G V Subbarao [email protected]

R – C Coupled Amplifier

Dr. G V Subbarao [email protected]

 Simplification
1. Determine DC operating point and calculate small
signal parameters.
2. Convert to the AC only model.
– DC Voltage sources are shorts to ground
– DC Current sources are open circuits
– Large capacitors are short circuits
– Large inductors are open circuits
3. Replace transistor with small signal model.
4. Simplify the circuit as much as necessary

Dr. G V Subbarao [email protected]

Mid frequency Analysis
using
Hybrid Pi Model

Dr. G V Subbarao [email protected]

 Rc Rc
 g m vb ' e -g m I b rb'e
I0 Rc  Ri R c +R i
Current Gain A i   
Ib Ib Ib
Rc Rc
 -g m rb'e   h fe
R c +R i R c +R i

V0 -g m v b'e rei -g m I b rb'e rei

Voltage Gain A v = = =
Vi I b (rb'b+ rb'e ) I b (rb'b+ rb'e )
h fe rei
- h ie  rb'b+ rb'e
I b h ie
 0VT
Input Resistance r =
Ic Vout
output Resistance ro =
Dr. G V Subbarao [email protected] IC
Low frequency Analysis

Dr. G V Subbarao [email protected]

 Rc
 g m vb ' e
 1 
Rc   Ri  
I0  jX c 
h fe Rc
A i Low   
Ib Ib  1 
Rc   Ri  
 jCc 
h fe Rc (R c  R i ) Ai (R c  R i )
 
 1   1 
(R c  R i ) Rc   Ri   Rc   Ri  
 jCc   jCc 
Ai Ai 1
   fl 
 j   jf l  2 Cc (R c  R i )
1   1  f 
 Cc (R c  R i )   
Dr. G V Subbarao [email protected]
 -g m I b rb'e R c R i
 1 
Rc +  Ri + 
V0  jωC c 
Voltage Gain A vLow = =
Vi I b h ie
-h fe R c R i -h fe R ci
 
 1   1 
h ie  R c +R i +  h ie 1+ 
 jωCc   jωCc (R c +R i ) 
Av
 R ci  R c / /R i
 j fl 
 1- f 
 

Dr. G V Subbarao [email protected]

High Frequency Anlaysis

Dr. G V Subbarao [email protected]

 Rc
 g m vb ' e
I0 Rc  Ri
Ai High  
Ib Ib
g m Rc
 
 1 
 Rc  Ri    j c 
 rb ' e 
 g m rb ' e Rc Ai
 
1  j crb ' e  Rc  Ri  1  j crb ' e 
Ai 1
  fh 
 f  2 crb ' e
1 j  
f
 h 
 h f e Rci Av
A v High  
hie (1  j  c rb'e )  f 
1 j  
f
 h 
Gain-band width product  Av f h
h fe Rc g m Rc
 
2 crb ' e Dr. Ri 
Subbarao
RcG V 2 c  Rc  Ri 
[email protected]
 Design of RC Coupled Amplifier
Design a CE amplifier with Av=100; Ic =2mA;
Icmin=1.75mA;Icmax=2.25.A;Rl=10Kand Vcc=12V
using BC 107 with hfemin=180; hfemax=460;anfd fl=500
hz
Design of Biasing Ckt:
1. Calculate Rc h fe Rl VT
and hie  h fe
Voltage Gain= hie I EQ
2. Calculate RE
Assume VCE=Vcc/2;
3. Obtain Rb from Stability factor S’’:
Dr. G V Subbarao [email protected]
 I c max  I c min I c min S 2
S ''  
 max   min  min (1   max )
RB
(1   max )(1  )
RE
S2 
RB
(1   max  )
RE
RB  RE (1   min )
VR2  VBE  I c min ;
 min
RBVcc R1VR2
R1  ; R2 
VR2 Vcc  VR2

Dr. G V Subbarao [email protected]

 • Choose capacitor values

1  h fe 10 10
CE  ; Cb  ; Cc  ;
2 f L hie 2 f L Z i 2 f L RL

R C =1.5K; R E =1.5K;
S''=1.785X10-6 ; S2  84.64; R B  154K

VR 2  4.85V ; R1  381K ; R 2  258 K ;

Ce  22  F ;Cb  1 F ;C c  0.33 F
Dr. G V Subbarao [email protected]