1.

Structure of the Lesson

Class
Class

1. intro – Overview of the lesson

Intro
Intro
2. Learning objective – present learning objective of the lesson
3. Table of Content – structure of the topics and subtopics in
the lesson

Study
Study
4. Lecture (75-90 minutes)
– present the lecture in detailed topics that covers all the
learning objectives of the lesson.
Assessment
Assessment - each topics should be divided into subtopics
(5-15 min in length is recommended)
- if a subtopic goes over 15 minutes divide the subtopic into
series of subtopics.
Review
Review

Class
Class end
end
Course Circuit theory and Laboratory

Lesson # Lesson 2

Title Bipolar Junciton Transistor

SME Dr. Nguyen Vu Thang

 Learning Objectives Table of Content
At the end of this chapter, the students should •Transistor Construction & Operation
be able to: •Common-Base Configuration
•Understand the basic transistor operation •Transistor Amplifying Action
& configuration •Common-Emitter Configuration
• Discuss transistor parameters and •Common-Collector Configuration
characteristics •Limits of Operation
•Transistor Specification Sheet
Transistor Construction & Operation
Transistor Construction & Operation
Common-Base Configuration
Common-Base Configuration
Common-Base Configuration

Developing the equivalent model to be employed for the

base to emitter region of an amplifier in the dc mode
 Common-Base Configuration
EXAMPLE:
a)Using the characteristic of fig 2, determine the resulting collector current if I E = 3 mA and VCB =
10 V.
b)Using the characteristic of fig 2, determine the resulting collector current if I E remain at 3 mA
but VCB is reduced to 2V.
c)Using the characteristics of fig 1 and 2, determine VBE if IC = 4mA and VCB =20 V.
d)Repeat part c) using the characteristics of fig 2 and 3.

Fig 1 Fig 2 Fig 3

 Common-Base Configuration
a) The characteristics clearly indicate that IC ≈ IE = 3 mA
b) The effect of changing VCB is negligible and IC continues to be 3 mA.
c) From Fig 2, IE IC = 4 mA . On Fig 1 the resulting level of VBE is about 0.74 V.
d) Again from Fig 2, IE IC = 4 mA. However, on Fig 3, VBE is 0.7 V for any level of emitter
current

Fig 1 Fig 2 Fig 3

 Transistor Amplifying Action

Ii = = = 10 mA
AV = = = 250
IL = Ii = 10 mA
VL = I­LR
= (10 mA)( 5kΩ)
=50 V
 Transistor Amplifying Action
Calculate the voltage gain (AV = VL/Vi ) for the network of Fig.
if Vi = 500 mV and R = 1 kΩ. ( The other circuit values remain the
same.)
Ii = = = 25 mA
IL Ii = 25 mA
VL = ILRL = (25 mA)(1 kΩ) = 25 V
AV = = = 50
Common-Emitter Configuration
 Common-Emitter Configuration

IC = αIE + ICBO IC = α( IC + IB ) + ICBO IC = +

 Common-Emitter Configuration
𝛽 𝑎𝑐 =
|
∆ 𝐼𝐶
𝑉 =𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡
∆ 𝐼 𝐶 𝐶𝐸

𝐼𝐶
𝛽 𝑑𝑐 =
𝐼𝐵

= = 100
Common-Emitter Configuration
IE = IB + IC
IC +
= 1+

α=

β=
 Common-Emitter Configuration
a) Using the characteristics of fig a), determine IC at IB = 30 µA and VCE = 10 V
b) Using the characteristics of fig b), determine IC at VBE = 0.7 V and VCE = 15V
Fig a) Fig b)
 Common-Emitter Configuration
a) At the intersection of IB = 30 µA and VCE = 10 V, IC = 3.4 mA.
b) Using fig b) , IB = 20 µA at VBE = 0.7 V. From fig a) we find that IC = 2.5 mA at
the intersection of IB = 20 µA and VCE = 15 V
Fig a) Fig b)
Common-Collector Configuration
 Common-Collector Configuration
An input voltage of 2 V rms (measured from base to ground) is
applied to the circuit of fig .Assuming that the emitter voltage
follows the base voltage exactly and that Vbe (rms) = 0.1 V,
calculate the circuit voltage amplification (AV = Vo /Vi ) and the
emitter current for RE = 1 kΩ.
Common-Collector Configuration
 IC (MA)
Limits of Operation
80 µA

ICMAX 25
70 µA
𝑃 𝐶 =𝑉 𝐶𝐸 𝐼 𝐶
𝑚𝑎𝑥
60 µA
20
50 µA

15 PCmax 40 µA

aturation 30 µA
B
10
20 µA
D

10 µA
5 C

IB = 0 µA
A
5 10 15 20
VCE SAT Cutoff VCE (V)
 Limits of Operation
Determine the region of operation for a transistor having the characteristics of this Figure if

IC (MA)
80 µA

ICMAX 25
70 µA

60 µA
20
50 µA

15 PCmax 40 µA

Saturation 30 µA
B
10
20 µA
D

10 µA
5 C

IB = 0 µA
A
5 10 15 20
VCE SAT Cutoff VCE (V)
VCE MAX
 Limits of Operation

IC (MA)
80 µA

ICMAX 25
70 µA

20
60 µA
=
50 µA = =
15 PCmax 40 µA
= =
Saturation 30 µA
B
10
20 µA
D

10 µA
5 C

IB = 0 µA
A
5 10 15 20
VCE SAT Cutoff VCE (V)
VCE MAX
Transistor Specification Sheet
Transistor Specification Sheet
Transistor Specification Sheet
Transistor Specification Sheet
 Assessment Quiz 1
IC VCB=20V
7
VCB=10V
6
5 VCB=1V
4
3
2
1
0
0.2 0.4 0.6 0.8 VBE

Using the characteristics of this Figure, determine at for . Is it reasonable to assume on an approximate basis
that has only a slight effect on the relationship between and
 Assessment Quiz 1
IC VCB=20V
7
VCB=10V
6
5 VCB=1V
4
3
2
1
0
0.2 0.4 0.6 0.8 VBE

Using the characteristics of this Figure, determine at for . Is it reasonable to assume on an approximate basis
that has only a slight effect on the relationship between and
Assessment Quiz 2

Ii pnp IL
E C

+ B
V1=200mV
_ Ro R
AC

Ri

Calculate the voltage gain for the network if the source has an internal resistance of 100 in
series with Vi.
Assessment Quiz 2

Ii pnp IL
E C

+ B
V1=200mV
_ Ro R
AC

Ri

Calculate the voltage gain for the network if the source has an internal resistance of 100 in
series with Vi.
Assessment Quiz 3
IC (MA)
80 µA
IB(uA) VCE=1V
VCE=10V
70 µA
6
10
60 µA
9 VCB=20V
5
50 µA 8
4
7
Active 40 µA
Saturation region 6
30 µA
3 5
20 µA 4
3
10 µA
1 2
IB = 0 µA 1
0
5 10 15 20
0
VCE SAT
𝐼 𝐶𝐸𝑂 =𝛽 𝐼 𝐵𝐸𝑂Cutoff
V CE MAX
0.2
VCE (V)0.4 0.6 0.8 V ( V)
BE

a) Using characteristics of this figure, determine ICEO at VCE = 10V.

b) Determine at IB = 10 and VCE = 10V.
c) Using determined in part (b), calculate ICBO.
Assessment Quiz 3
IC (MA)
80 µA
IB(uA) VCE=1V
VCE=10V
70 µA
6
10
60 µA
9 VCB=20V
5
50 µA 8
4
7
Active 40 µA
Saturation region 6
30 µA
3 5
20 µA 4
3
10 µA
1 2
IB = 0 µA 1
0
5 10 15 20
0
VCE SAT
𝐼 𝐶𝐸𝑂 =𝛽 𝐼 𝐵𝐸𝑂Cutoff
V CE MAX
0.2
VCE (V)0.4 0.6 0.8 V ( V)
BE

a) Using characteristics of this figure, determine ICEO at VCE = 10V.

b) Determine at IB = 10 and VCE = 10V.
c) Using determined in part (b), calculate ICBO.
Assessment Quiz 4

IC (MA)
7
𝐼 𝐸 =7 𝑚 𝐴
6
𝐼 𝐸 =6 𝑚 𝐴

5
𝐼 𝐸 =5 𝑚 𝐴
𝐼 𝐸 =4 𝑚 𝐴
4

Active region 𝐼 𝐸 =3 𝑚 𝐴
3

2
𝐼 𝐸 =2 𝑚 𝐴
𝐼 𝐸 =1 𝑚 𝐴
1

𝐼 𝐸 =0 𝜇 𝐴
0
0 5 10
Cutoff region
15 20
𝑉 𝐶𝐵 ( 𝑉 )
Determine the region of the operation for a transistor having the characteristics of this
figure if

=
 Assessment Quiz 5

IC (MA)
80 µA

70 µA
6

60 µA
5
50 µA

4
Active 40 µA
Saturation region
30 µA
3

20 µA

10 µA
1

IB = 0 µA
0
5 10 15 20
VCE SAT VCE (V)
𝐼 𝐶𝐸𝑂 =𝛽 𝐼 𝐵𝐸𝑂 Cutoff
VCE MAX

Using the characteristics of this figure, determine at I B = 25 and VCE = 10V. Then calculate and
the resulting of IE. (Use the level of IC­determined by IC =IB.)
 Assessment Quiz 5

IC (MA)
80 µA

70 µA
6

60 µA
5
50 µA

4
Active 40 µA
Saturation region
30 µA
3

20 µA

10 µA
1

IB = 0 µA
0
5 10 15 20
VCE SAT VCE (V)
𝐼 𝐶𝐸𝑂 =𝛽 𝐼 𝐵𝐸𝑂 Cutoff
VCE MAX

Using the characteristics of this figure, determine at I B = 25 and VCE = 10V. Then calculate and
the resulting of IE. (Use the level of IC­determined by IC =IB.)