03-2-2021 Material Science II: D404

Introduction of
Nanosystem

Presented by
Sheo K. Mishra
 Contents

1. Literature review
2. Technical review

2
 Literature review

History of Nanoscience
In December 29, 1959, Richard Feynman originated the
idea of nanotechnology, with his famous lecture- “There’s
plenty of Room at the Bottom” at Caltech.
The term “nanotechnology” was defined by Tokyo
Science University Professor Norio Taniguchi in a 1974
paper as follows “Nanotechnology mainly consists of the
processing of separation, consolidation, and deformation
of materials by one atom or one molecule”.
Richard Feynman

Gold and silver nanoparticles (particles of diameter less than 100 nm) have
been used as coloured pigments in stained glass and ceramics since the 10th
century AD (Erhardt 2003). Depending on their size, gold particles can appear
red, blue or green in colour.
The ancient Romans unknowingly became nanotechnologists when they made
red stained glass by mixing gold chloride into molten glass. That created tiny
gold spheres (nanoparticles) which absorbed and reflected the sunlight in a way
that produces a rich ruby color.
3
Figure showing Painting from Romans Catholic Church: (Different
colours are due to different size of nano material used)

4
What is Nanotechnology?
It comprises any technological developments on
the nanometer scale, usually 0.1 to 100 nm.
One nanometer equals one thousandth of a
micrometer or one millionth of a millimeter.
It is also referred as microscopic technology.
 Properties of materials of nanometric dimensions
are significantly different from those of atoms as
well as those of bulk materials.

5
Ch: 1
Semiconductor Nanoparticles (NPs)
 Synthesis with a variety of chemical methods to produce NPs with

desired size, shape and structure

 Quantum confinement occurs when the radius of the NPs is
comparable to the exciton’s Bohr radius
 The electronic energy levels of the particle around the Fermi level
are strongly affected for sizes in the 10-100 nm range
 The UV-visible absorption is determined by the band edge
transition, which is strongly size and shape dependent (band-gap
energy increases as the size decreases) and hence highly tunable
 Can exhibit band edge or defect (red shifted) luminescence; in both
cases luminescence can be very intense and can be tuned.
6
Quantum confinement effect
A hypothetical model based on effective mass
approximation has been proposed to explain this
effect.
According to this model Quantum confinement effect
can be:
1. Strong Confinement
2. Weak Confinement

7
Strong Confinement
R < aB
aB = Bhor exciton Radius, R = Particle Radius
 Results Blue shift as E α 1/R2
 Also results discreteness in band because of
overlapping of wave-functions.
Individual motions of electrons & holes are
independently confined (quantized).

8
Size dependence of exciton energy can be
expressed by –

E = Eg + c / R2
Where, Eg = Bulk band gap,

c = ħ2 χnl2 / 2µ = Constant

R = Particle Radius

1 / µ = 1/ me + 1 / mh

µ = Reduced mass of electron & hole pair

χnl = Roots of Bessel function.

9
 Weak Confinements
R > aB
aB = Bhor exciton Radius,
R = Particle Radius

 Exciton Translational motion is confined and the size dependence

of energy of the exciton can be expressed as:
E = Eg – Ry*/n2 + C/R2
Where, Eg = Bulk band gap,
Ry* = Exciton Rydberg Energy
C = ħ2 χnl2 / 2M = Constant
χnl = Roots of Bessel function
n = number of root,
t = order of function
R = Particle size, M = me + mh
me= Effective mass of electron, mh = Effective mass of holes
10
 LUMO
C. B.
Energy

Band Gap
HOMO V. B.

Molecules Nanoparticles Bulk

Semiconductors

Figure 1
11
Electronic band theory
Conduction
band
(empty)

band gap band gap

Valence
band
(full)

Metal (conductor) Insulator Semiconductor

12
 The main effect of confinement is the blue shift (proportional to
inverse of the square of the particle radius).

 Electronic properties such as electron–hole interactions are

modified in the strong confinement regime.

Quantum confinement effect causes

 An increase of the energy gap (i.e., Blue shift)

 The splitting of the electronic states (As in figure 1)

 Different density of state.

 The differences between the electronic behavior of the bulk and of

Quantum confined low dimensional semiconductors are due to
their differences in the density of states.

13
 Passing from three dimensions to two dimensions the density of
states N (E) changes from a continuous dependence, where
N(E)~E1/2, to a step like dependence. Thus the optical
absorption features are different for the bulk and for the
quantum well structure.
3D
Semiconductor

2D
Quantum well
N(E)
1D
Quantum wire

0D
Quantum dot
E

14
Quantum efficiency of nanoparticles
 Luminescent nanoparticles have higher quantum efficiency than
conventional phosphors.

 The oscillator strength, f, is an important optical parameter and

the oscillator strength of the free exciton is given by –
2m 2 2
f ex  E  U (0)

Where, m = Electron mass,
∆E = Transition energy,
µ = The transition dipole moment,
|U(0)|2 = Probability of finding the electron & hole at
the same site (the overlap factor).

15
The electron-hole overlap factor increases largely due
to quantum size confinement, thus yielding an increase
in the oscillator strength.
In bulk semiconductors, due to the extreme dislocation
of the electron or hole, the electron hole exchange
interaction term is very small, while in nanoparticles,
due to confinement, the exchange term should be very
large.
Therefore, there may be a large enhancement of the
oscillator strength from bulk to nanostructured
materials.

16
Photoluminescence of Semiconductor nanoparticles
In photoluminescence (PL) the excitation source is high energy
photons (say UV)
Optical excitation of semiconductor nanoparticles often leads
 Band edge luminescence
 Deep trap luminescence

PL process in semiconductor nanoparticles is very complex & most

nanoparticles exhibit broad & shifted luminescence arising from the
deep traps of surface states.

As the particles become smaller, the number of surface states

increases rapidly, reducing the band edge emission.

For small particle size, a large percentage of the atoms are on or

near the surface. Surface states near the band gap can mix with
interior levels, & these effects may also influence the spacing of the
energy levels.
17
Luminescence
The light emission from any process other than black body radiation is
called luminescence. Luminescence is basically a two-step process and
involves excitation of electronic system and emission of photons.
The earliest written account of a solid state luminescent material comes
from a Chinese text published in the Song dynasty (960–1279 A.D.),
referring to a book (never recovered) from the period 140-88 B.C.
Luminescence in solids was first described in Western literature dates
from 1603. Then, the Italian shoemaker and alchemist Vincenzo
Cascariolo used the natural mineral barite (BaSO4) with coal, in an effort
to create gold.
After heating the ground stone under reducing condition he–obviously –
did not obtain gold, but a persistent luminescent material.
This so-called Bolognian stone became famous and a subject of study
and admiration for decades to come. It came to the attention of Galileo
Galilei, who got sample and gave them to Gulio Lagalla. Lagalla wrote
about its extraordinary glow in Orb Lunace, 1612.

18
In 1652, Nicolas used optical filters to show the color of the light given off at
night by the “stone” exposed to white light.
The name phosphor (in Greek ‘light bearer’) was already used at that time,
even if the chemical element phosphorous was only isolated in 1669 (from urine)
by the German alchemist Hennig Brand. Phosphorous becomes luminescent
under moist conditions, when it oxidizes.
Friedrich Hoffmann synthesized CaS as a phosphor in 1700. The luminescent
properties of ZnS, which is one of the most important luminescent hosts in the
20th century, were not recognized until 1866. In 1888, the German physicist
Eilhard Wiedemann introduced the term luminescence, of Latin origin, to
include both fluorescence and phosphorescence.
Today, luminescence is considered to be a process by which a material
generates nonthermal radiation that is characteristics of the particular materials.

19
Another distinction in luminescence is made on the basis of decay
time. It is called fluorescence when decay time is of the order of 10 -8
seconds and is known as phosphorescent when it varies from µs to
minutes, hours and even days.
Basically it is of two types
• Fluorescence (Direct or fast process)
• Phosphorescence (Slow process)
Fluorescence
 Here the emission of photons stops with in approximately 10-8 Sec
after the excitation is turned off.(10-8 Sec is taken because it is the
life time of an atom in the excited state & after this time the excited
atoms returns to ground state)
EC

Absorption Emission

EV
Fig: Fluorescence
20
Phosphorescence
Emission Occurs even if the excitation is ceased.

(d) EC
(b)

(c)
hν1 Et
hν2
Metastable state
Absorption Emission hν1> hν2
(a) (e)

EV
-- (a) -- An incoming photon with energy hν1 > Eg is absorbed & creates
electron hole pair and electron goes to conduction band.
-- (b) -- The excited electron gives a part of its energy to the lattice by
scattering & electron reaches near the bottom of conduction band.
-- (c) -- The electron is trapped by impurity level E t. It remains trapped
until it is thermally re-excited to conduction band (d).
-- (d) -- Finally direct recombination occurs. As a result the electron
gives a photon of energy hν2. The energy of photon is approximately
equal to band gap energy.
21
Classification of Luminescence
Mode of excitation distinguishes between different types of
luminescence are given as per following table:

Type of luminescence Mode of excitation

Photoluminescence Photons (UV-radiation)

Radioluminescence X-rays, -rays , ,

protons, fission fragmentation

Electroluminescence Electric field

Cathodoluminescence Cathode rays / Moving

electrons

Chemiluminescence Chemical reactions

Triboluminescence Mechanical forces

Bioluminescence Biological process

22
Luminescence dynamics
Absorption of a photon places an atom (or
molecule) in a meta stable excited state.
The meta stable state must re-emit the energy in one
or more of three possible relaxations paths
1. Radiative process (Either Fluorescence or phosphorescence)
2. Non Radiative process (Internal conversion or energy transfer)
3. Chemical change (breaking of bonds to form new species)

Internal conversion in excited states is very rapid

relative to radiative rates & therefore the system
may be assumed to radiate from the lowest energy
level. This is known as Kasha’s rule.

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 The total rate of relaxation is the sum of Radiative rate & Non
radiative rate. Assuming that there is no chemical change due to
lowest energy level. So Total relaxation rate (Kt) out of lowest
energy level is given by:

Kt = Krad + Knon

Krad = Radiative rate

Knon = Non radiative rate

& observed luminescence decays exponentially with time.

I (t) = I (0) exp(-t/τobs)

τobs= Observed life time & is proportional to 1/Kt

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 The goal in luminescent system is to increase the
luminescence efficiency either through increasing
radiative rate (decreasing the natural life time) or
decreasing the non radiative rate (increasing
observed life time).

 Nanoparticles have an increased radiative rate due

to the effect of quantum confinement. (In
nanoparticles the single most important
contribution to the non radiative rate is trapping to
the surface states).

25
Luminescence of doped nanoparticles
Semiconductor nanoparticles may also be doped
with impurities that have a strong luminescence of
their own. Quantum confinement affects not only the
excitonic emission in the host but also the
luminescence from the dopants.
Conduction Band

Defect Defect
Levels Levels

Valence Band

26
Photoconductivity
Photoconductivity refers to the incremental change upon
illumination of the electrical conductivity of a substance.
The absorption of light by a solid is a quantum process in which
electrons are excited to higher energy level. This leads to a higher
conductivity particularly when sufficient number of electrons are
excited.
It excited either from localized states in the forbidden gap to the
conduction band, or from the valence band to conduction band
(figure…). n=fT
CONDUCTION BAND

Excitation
f/sec. Recombination

VALENCE BAND

Fig. : Photoexcitation and recombination

27
Basic mechanism
The electrical conductivity (σ) of a solid
semiconductor/insulator in which, one type of charge
carriers are assumed to dominate, is given by the
expression:   ne
where n, e and µ are the density, charge and mobility
of the charge carriers, respectively.
A change in conductivity (σ) with illumination may
arise either from
(i) a change in the free carrier density (n), or
(ii) a change in their mobility (µ).
This can be represented by an expression:
  ne  en
for very small values of n and µ.
In short, photoconductivity is due to the absorption of
photons (either by an intrinsic process or by impurities
with or without phonons), leading to the creation of
free charge particles in the conduction band and/or in
the valence band.
Photoabsorption and hence photoconduction take
place by one of following mechanism:
1.Band-to-band transitions
2.Impurity levels to band edge transitions
3.Ionization of donors
4.Deep levels (located in the valence band) to
conduction band transition.
Parameters Controlling the Photocurrent in Photoconductor

There are a number of parameters which affect the flow

of photocurrent in photoconductor. We take the
following parameters which are of importance.
External Field
Intensity of illumination
Energy of illumination (Spectral analysis)
From the dependence of the photoconductivity on
factors such as the exciting photon energy, the intensity
of the illumination or the ambient temperature,
significant information can be derived on the
distribution of electronic states in the material and on
carrier generation and recombination processes.

30
 Effect of Field
 The photocurrent increases with increasing cell voltage. The
log (I) versus log (V) curve is a straight line having different
slopes with respect to changing voltage.
 Thus the variation of photocurrent with cell voltage is given
by relation, I  Vwhere
r r is slope of any straight line section.
p
 If r<1, this shows nonlinear variation of current with voltage.
 if r=1, this shows linear variation of current with voltage.
 if r>1, this shows non-ohmic behaviour of photocurrent. The
non-ohmic behavior of the photocurrent suggests that some
charge carriers are being injected into the material from
electrode side.
 if r>2, this shows that the current flow through the system is
limited by space charge at these voltage regions.

31
The current flow through an insulator is limited by space charge
when carriers in excess of those present in thermal equilibrium can
be injected through a contact.
If the material has traps, then the current will also be determined
by traps. This trap-limited space-charge limited current varies with
voltage, according to power index greater than two .
Slight saturation in photocurrent has also been observed. This has
been explained by Pillai et al. by using the concept of class-II states.
We assume that among the various imperfections present, there
are two kinds of dominant states class-I and class-II in the forbidden
gap.
Class-I consists of states which have roughly similar capture cross-
section for both electrons and holes and lie near the middle of the
gap.
Class-II states are close to the valence band and have higher
capture cross section for holes than for electrons .
The existence of class-II trapping sites can explain the slight
saturation effect observed in the V versus log curves at higher
voltages. Ip

32
In the absence of illumination there will be only one Fermi-level
for both holes and electrons.
 However, in the illuminated material, there will be two Fermi-
levels, one corresponding to electrons and the other one
corresponding to holes.
 We consider that at a particular light intensity and voltage the
position of Fermi-levels are such that they have just converted all
the class II states into recombination levels.
The effect of the additional electrons injected into the material by
the additional voltage will be to raise the Fermi level upwards
towards the conduction band.
This would cause some of the class II centers to act as hole traps
again, leading to desensitization and the decrease in electron life
time with increasing voltage. This could account for the saturation
effect in versus logV curves. I p

33
Effect of Intensity of Illumination
The photocurrent also increases with increasing intensity of
illumination. The log versus log (intensity of illumination) gives us
useful information about the material. The log versus log curves are
straight lines having different slopes for lower and higher light
intensities. So, the variation is given by relation I p, where,
Lr r
is slope
of any straight line section.
if r  1 this shows super-linear variation of photocurrent with light
intensity.
The super-linear variation of photocurrent with light intensity can
be explained on the basis of class II centres .
This may be explained as if at low intensity of illumination the
position of the Fermi level may be such that class-II states act as hole
traps.
By increasing light intensity, electron Fermi-level and hole Fermi-
level are shifted towards the conduction and valence bands
respectively.
Thus, converting some of the class-II states into recombination
centers which ultimately sensitize the sample. This effect gives rise to
superlinearity in log versus
Ip log curve.
L
34
If r this
1 shows linear variation of photocurrent with light intensity.
This indicates continuous trap distribution.
If r this
1 shows sub-linear variation of photocurrent with intensity
of illumination.
 This sub-linear variation of photocurrent may be explained on the
basis of class I centres. The class I centers having similar capture cross-
section for both electrons and holes, lie between the conduction band and
the electron Fermi-level.
As the light intensity increases the Fermi-levels of electrons and holes
are separated apart more and more, thereby converting more of the
class-I centers into recombination centers. This process decreases
electron lifetime with increasing intensity and gives rise to the sub-
linearity in the log versus log curve.
35
Energy of Radiation
The variation of photocurrent with wavelength of radiation gives us
information about band gap of sample.
The absorption of the incident radiation by the sample changes with
the change of incident wavelength depending on its energy gap.
 The wavelength corresponding to the band gap of the material
produces maximum photoexcitation. Thus the peak of the spectral
response curve may correspond to the absorption edge of the sample.
 The light having wavelength greater than the absorption edge of a
given dielectric produces little photoexcitation.
In this higher wavelength region, the photo-sensitivity can be
associated with the imperfection centers in the layer.
36
Technical Review: Characterization Techniques
The following characterization techniques/tools are used
for structural and optical study of synthesized NPs
Structural/Morphological Characterization
Techniques
X-ray diffraction (XRD)
Transmission electron microscopy (TEM)
Scanning electron microscopy (SEM)
Optical Characterization Techniques
UV-visible (UV/VIS) spectroscopy
Photoluminescence (PL) spectroscopy
Photoconductivity spectroscopy

37
 X-ray diffraction (XRD)
 Phase Determination
 Quantification
 Degree of crystallinity
 Crystallite size / strain
 Structure information

Particle size is determined

using Debye Scherrer’s
Formula:
d= Kλ / ß COSθ
where,
d : Particle size
K: Shape factor(0.85-0.95)
λ: Wave length of X-Rays (1.5 Å)
ß: FWHM
θ: Bragg’s angle

38
 TEM/ SEM
 SEM probes only the surface

 SEM suffers from charging effects,

hence required metallic coating,
resolution ~20 nm onwards
 TEM sample preparation is very
intensive (sample thickness~ 30-40 nm )
 Results are singular, qualitative but
can be poorly representative of
samples (lack of good statistics)
 Non–ambient studies–limited options
TEM
39
 TEM/ SEM
TEM SEM
TEM is an imaging technique whereby an SEM is a type of electron microscope
electron beam is focused on to a specimen capable of producing high resolution
causing an enlarged version to appear on a images of a sample surface. Due to
fluorescent screen or layer of photographic manner in which image is created, SEM
film or to be detected by CCD camera. image have a characteristic 3-D
appearance and are useful or judging
By TEM we can Determine surface structure.
Morphology By SEM we can Determine
Size, shape, arrangements of particles and Topography
Their relationships at atomic scale. The surface features of an object, its detectable
feature limited to tens of nm.
Crystallographic Information
Morphology
Degree of order/orientation, detection of
The shape, size and arrangement of the particle
atomic scale defects (nm area). assembled by the objects that are lying on the
surface of the sample.
Composition
The elements/ compounds – relative ratio
Composition
The elements and compounds and relative ratio,
(nm area).
scan area ~ 1µm.

40
CH: 2
UV-Vis / PL
UV-vis characterization
The room temperature UV-visible absorption
spectrum of synthesized nanomaterials is recorded
with the help of a Perkin Elmer LS-35 spectrometer.

PL Characterization SEMUV-Vis/ FL

The room temperature photoluminescence (PL)

spectrum of synthesized nanomaterials is recorded
with the help of a Perkin Elmer LS-55
spectrometer

41
 Photoconductivity measurements
Copper PCB epoxy
In PC study, a cell type device is used, and cell plate
Electrodes
formed by putting a thick layer of powdered
samples in between two Cu electrodes etched on a
Cu plate (PCB), having a spacing of 1 mm.
 The powdered layer is pressed with a glass plate
which has a slit for providing illumination area of
0.25 cm 2. Samp
The direction of illumination is normal to field Light Intensity le

across the electrodes. The cell is mounted in a dark

chamber with a slit where from the light is allowed
R
to fall over the cell.
Sample R I
Hg lamp of 300 W is used as a photo-excitation V S
A H
source. A stabilized dc field (50 V/cm to 500 V/cm) L
Multi
is then applied across the cell. Meter
For spectral analysis a set of filters (365nm,
405nm, 436nm, 490nm, 546nm, 580nm, 610nm,
691nm) are used.

42
 ZnO

As an important II-VI semiconductors with a wide

and direct band gap (3.37 eV at room temperature).
ZnO has high exciton binding energy (~60 meV), has
drawn much attention during the last few years, owing
to its specific electrical, catalytic, photochemical and
optoelectronic property.
It is therefore a potential candidate for
optoelectronic applications in the short wavelength
range (green, blue, UV), information storage,
transducers, photonic crystals, gas sensors,
photodiodes and photodetectors.

43
Ch: 6 CdS
CdS is the most promising material for detecting visible
radiation because of its primary band gap of 2.42 eV (516 nm)
with exciton binding energy (28 meV).
It is a direct band gap semiconductor material and highly
sensitive for long wavelength optoelectronics devices at room
temperature.
It has wide applications in optoelectronics, solar energy
conversion, X-ray detectors, and as a window material for hetro-
juntion solar cells because of high absorption coefficient.
Doped with transition metal ions (Cu, Fe, Co, Ag and Mn) leads
to tailor structural, optical and luminescence properties.

44
Ch: Research
6 papers publication in various reputed International Journals
1. Sheo K. Mishra, Rajneesh K. Srivastava, S.G. Prakash, Raghvendra S. Yadav,
A.C. Pandey, “Photoluminescence and photoconductive characteristics of
hydrothermally synthesized ZnO nanoparticles” OPTO−ELECTRONICS
REVIEW 18(4), (2010) 467–473. (Impact Factor: 1.16)
2. Ram Kripal, Atul K. Gupta, Sheo K. Mishra, Rajneesh K. Srivastava, Avinash
C. Pandey, S.G. Prakash, “Photoluminescence and photoconductivity of
ZnS:Mn2+ nanoparticles synthesized via co-precipitation method”,
Spectrochimica Acta Part: A 76 (2010) 523–530. (Impact Factor: 1.587)
3. S. Srivastava, S.K. Mishra, R.S. Yadav, R.K. Srivastava, A.C. Pandey, S.G.
Prakash, “Photoconductivity and Dark-conductivity Studies of Mn-doped ZnS
nanoparticles”, Digest J. Nanomater. Biostruct. 5 (2010) 161–167. (Impact
Factor: 1.75)
4. S.C. Singh, S.K. Mishra, R.K. Srivastava, and R. Gopal, “Optical Properties of
Selenium Quantum Dots Produced by Laser Irradiation of Water Suspended Se
Nanoparticles” J. Phys. Chem. C 114 (2010) 17374–17384. (Impact Factor:
4.22)
5. R.L. Mishra, Sheo K. Mishra, S.G. Prakash “Optical and Gas sensing
characteristics of Tin Oxide nano-crystalline thin film”, Journal of Ovonic
Research 5 (2009) 77–85.

45
6. Sheo K. Mishra, Rajneesh K. Srivastava, S.G. Prakash, Raghvendra S.
Yadav, A.C. Pandey, “Structural, Photoconductivity and
Photoluminescence Characterization of Cadmium Sulfide Quantum Dots
Prepared by Co-precipitation Method”, Electronic Materials Letters 7
(2011) 31–38. (Impact Factor: 1.292)
7. Archana Maurya, Pratima Chauhan, Sheo K. Mishra, Rajneesh K.
Srivastava, “Structural, Optical and Charge Transport Study of Rutile TiO2
Nanocrystals at Two Calcination Temperatures”, Journal of Alloys and
Compounds: doi:10.1016/j.jallcom.2011.05.108 (2011) (Online). (Impact
Factor: 2.135)
8. Ram Kripal, Atul K. Gupta, Rajneesh K. Srivastava, Sheo K. Mishra,
“Photoconductivity and Photoluminescence of ZnO nanoparticles
synthesized via co-precipitation method”, Spectrochimica Acta Part: A,
doi:10.1016/j.saa.2011.05.019 (2011) (Online). (Impact Factor: 1.587)
9. Sheo K. Mishra, Rajneesh K. Srivastava, S.G. Prakash, Raghvendra S.
Yadav, A.C. Pandey, “Photoconductivity and Photoluminescence
Characteristics of Mn-doped CdS Nanoparticles synthesized by Co-
precipitation Method”, Journal of Alloys and Compounds
(Communicated). (Impact Factor: 2.135)

46
Paper Proceedings in various National/ International seminars

1. Sheo K. Mishra, Raghvendra S. Yadav, R.L. Mishra, Smriti Srivastava,

Rajneesh K. Srivastava, A.C. Panday, S.G. Prakash, “Characterization of
photoconductivity in cadmium sulfide nanoparticles” in 2 nd National
Conference on Nanomaterials and Nanotechnology (NATCON NAMTECH –
2009), Lucknow University, Lucknow, during 21-23 December, 2009,
published in book form, Excel India Publishers, (ISBN 93-80043-61-9) (Poster
Presentation)
2. Sheo K. Mishra, Raghvendra S. Yadav, Rajneesh K. Srivastava, A.C. Panday,
S.G. Prakash, “Photoconductivity, dark-conductivity and photoluminescence of
hydrothermally synthesized ZnO nanoparticles” in International Conference
ELECTRO–2009, BHU, Varanasi during 22-24, December, 2009, and
published in MACMILLAN, Macmillan Publishers India Ltd (ISBN: 023-032-
851-2), IEEE digital library explore, pp. 461-463, (2009) (Online). (Oral
Presentation)
3. Sheo K. Mishra, Smriti Srivastava, Rajneesh K. Srivastava and S.G. Prakash,
“Study of voltage dependence of photocurrent and dark-current in annealed
ZnO nanoparticles synthesized by solid state reaction method”, on 25August
2010 at Department of Physics, Ewing Christian College, Allahabad has been
accepted for publication in book proceeding with ISBN No.
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4. Smriti Srivastava, Sheo K. Mishra, Rajneesh K. Srivastava and S.G. Prakash,
“Electroluminescence in ZnS:Sm, Li using solid state reaction method”, on 25
August, 2010at Department of Physics, Ewing Christian College, Allahabad has been
accepted for publication in book proceeding with ISBN No.
5. Sheo K. Mishra, Smriti Srivastava, Rajneesh K. Srivastava, A.C. Panday, S.G.
Prakash, “Photoluminescence and ultraviolet photoresponse properties in ZnO
nanophorsphors prepared by thermal decomposition of zinc acetate”, in 4th
International Conference “INDIAS-2010” Allahabad, India during September 19th –
21st, 2010, accepted in J. Aadv. Mater. Lett. (AMLET).
6. Sheo K. Mishra, Rajneesh K. Srivastava, Nitin Pandey, S.G. Prakash, “Study of
optical properties of zinc-oxide nanoparticles prepared by thermal decomposition
method” in 3rd National Conference on Nanomaterials and Nanotechnology
“NATCON NAMTECH–2010”, Amity School of Engineering and Technology,
Amity University, Lucknow, UP, during 21-23 December, 2010, published in book
proceeding Volume 1, Issue 1, (ISSN: 2229 4872) and accepted in Journal of
Bionanoscience for online publication.
7. Nitin Pandey, Rajneesh K. Srivastava, Sheo K. Mishra, S.G. Prakash, “Investigation
of photoconductivity, dark-conductivity of Cu-doped ZnO nanoparticles”, in 3rd
National Conference on Nanomaterials and Nanotechnology “NATCON
NAMTECH–2010”, Amity School of Engineering and Technology, Amity
University, Lucknow, UP, during 21-23 December, 2010, published in book
proceeding, Volume 1, Issue 1, (ISSN: 2229 4872).
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