RAM ROM

MEMORY MAP
(UNIT-1)

(SUB: Microprocessor and Interfaces)

PREPARED BY:
ER. MOHIT MISHRA
ASSOCIATE PROFESSOR
COMPUTER SCIENCE DEPARTMENT
 Memory Overview
• Memory stores the program running and the data on which the program
operates
•Data store in binary code.
• Terminology:
Memory Cell – A device or an electrical circuit used to store
a single bit (0 or 1). Ex: flip-flop
Memory Word – A group of bits (cells) I memory that
represents instructions or data of some
type. Ex: Index Register consisting of 16 bit
can be considered to be a memory word
Byte – A special term used for a group of 8 bits
Nibble – Half of Byte ( 4bit).
Capacity –A way of specifying how many bits can be stored
in a particular memory device or complete memory
system.
Capacity metrics unit: 1K = 210 = 1024.
1M = 220 = 1,048,576.
1G = 230 = 1,073,741,824
 Memory Example…
A certain semiconductor memory chip is specified as
2K x 8.
a. How many words can be stored on this chip?
b. What is the word size?
c. How many capacity can this chip store?

Solution:
a. 2K = 2 x 1024 = 2048 location.
b. Word size is 8-bits (one byte).
c. The total capacity is 2048 x 8bit = 16,384 bits
 Memory Example…
Which memory stores the most bits:
a 5M x 8bits memory OR
a 1M x 16bits memory?

Solution: Capacity
5M x 8 = 5 x 1,048,576 x 8 = 41,943,040 bits
1M x 16 = 1,048,576 x 16 =16,777,216 bits
 The 5M x 8 memory stores more bits.
 MEMORY TERMINOLOGY

• Density- Another term for capacity

• Address – A number that identifies the location of a word in
memory.
• Read operation – the operation whereby the binary word
stored in a specific memory location (address) is sense and
then transferred to another device.
• Write operation – The operation whereby a new word is
placed into a particular memory location.
• Access Time – A measure of memory device’s operating
speed. It is the amount of time required to perform a read
operation.
 MEMORY TERMINOLOGY
• Main Memory – Also referred to as the computer’s working
memory. It stores instructions and data the CPU is currently
working on. It is the highest-speed memory in the computer
and is always a semiconductor memory.
• Auxiliary Memory – Also referred to as mass storage because
it stores massive amounts of information external to the main
memory. It is slower in speed than main memory and is
always nonvolatile. CDs are common auxiliary devices.
 Memory Type

ROM RAM
(Read Only Memory) (Random Access Memory)

1. SRAM : Static RAM

1. PROM : Programmable ROM 2. DRAM : Dynamic RAM
2. EPROM : Erasable PROM
3. EEPROM : Electrically-erasable PROM or
EAROM: Electrical Alterable ROM
4. FLASH MEMORY
 ROM
READ-ONLY MEMORIES
• The read-only memory is type of semiconductor memory
designed to hold data that either are permanent or will not
change frequently. (Non-volatile)
• During normal operation data can be read from ROM.
• Data can be entered electrically –programming or burning-in
the ROM.
• Some ROMs cannot have their data changed once they have
been programmed; others can be erased and reprogrammed
as often as desired.
• A major use for ROMs is in the storage of programs in
microcomputers. When the microcomputer is turned on, it
can immediately begin executing the program stored in ROM
ROM BLOCK DIAGRAM
 ROM BLOCK DIAGRAM

• Has 3 sets of signals: address inputs, control inputs, and data

outputs.
• Store 16 words because it has 2^4=16 possible addresses, and
each word contains 8-bit because there are 8 data outputs.
• This is a 16 x 8 ROM.
• The most common numbers of data outputs for ROMs are 4, 8,16
bits with 8-bit word being the most common.
• Control input CS-Chip Select – an enable input that enables or
disabled the ROM outputs
• Many ROMs have two or more control inputs that must be active
in order to enable the data outputs so that data can be read from
the selected address.
 ROM BLOCK DIAGRAM

• CS input shown in figure is active-LOW; therefore, it must be

in the LOW state to enable the ROM data to appear at the
data outputs
• Notice that there are no R/W input because the ROM cannot
be written into during normal operation.
 THE READ OPERATION
• 16 different data words are stored at the 16 different
address locations.
• In order to read a data word from ROM, we need to do 2
things :
– Apply the appropriate address inputs
– Activate the control inputs.
– Ex: if we want to read the data stored at location 0111 of the
ROM, we must apply A3A2A1A0=0111 to the address inputs and
then apply a LOW to CS. The address inputs will be decoded
inside the ROM to select the correct data word, 11101101, that
will appear at outputs D7 to D0. If CS is kept HIGH the ROM
outputs will be disabled and will be in the Hi-Z state.
 ROM
PROGRAMMABLE ROM (PROM)
• For lower-volume applications, manfacturers have
developed fusible-link PROMs that are user-
programmable; that is, they are not programmed
during the manufacturing process but are custom-
programmed by the user.
• Once programmed, cannot be erased and
reprogrammed
• If the programmed in the PROM must be changed, the
PROM must be thrown away.
 ROM
PROGRAMMABLE ROM (PROM)
 EPROM
ERASABLE PROGRAMMABLE samb.
ROM (EPROM)

EPROM programing can be done by charging

floating gate in side it.
The programming of an EPROM can be done
in special programmer unit circuit and
erasing using UV light source .
ERASABLE PROGRAMMABLE ROM (EPROM)

• Can be programmed by the user and can be erased

and reprogrammed as often as desired.
• Nonvolatile memory that will hold its stored data
indefinitely
• The programming process is usually performed by
a special programming circuit that is separate from
he circuit in which the EPROM will eventually be
working.
• EPROMs are available in a wide range of capacities
and access times; devices with a capacity of 512K x
8 and can access time of 20 ns are commonplace
 ROM
ERASABLE PROGRAMMABLE ROM (EPROM)
Disadvantages:
1. They must be removed from their circuit to be erased and
reprogrammed
2. The erase operation erases the entire chip-there is no way
to select only certain addresses to be erased
3. The erase and reprogramming process can typically take 20
minutes or more.
 ROM
ELECTRICALLY ERASABLE PROM (EEPROM)
The disadvantages of the EPROM were overcome by the
development of the electrically erasable PROM (EEPROM)
as an improvement over the EPROM.
The erasing and programming of an EPROM can be done
in circuit ( without UV light source or a special
programmer unit)
Advantages: ability to erase and rewrite individual bytes
(8-bit words) in the memory array electrically.
During a write operation, internal circuitry automatically
erases all of the cells at an address location prior to writing
in the new data. This byte eras ability makes it much
easier to make changes in the data stored in an EEPROM
 ROM
ELECTRICALLY ERASABLE PROM (EEPROM)
 ROM
FLASH MEMORY
• From EEPROM to Flash memory cell, is like the simple singe-
transistor EPROM cell, being only slightly larger.
• Allows electrical erasability but can be built with much higher
densities than EEPROMs.
• The cost of flash memory is considerably less than for EEPROM
• Rapid erase and write times.
• Use bulk erase operation in which all cells on the chip are erase
simultaneously
• This bulk erase process typically requires hundreds of milliseconds
compares to 20 minutes for UV EPROMs
 ROM
example description
ROM
example description
 RAM
(Random Access Memory)

Any memory address location is as easily accessible as

any other.
Is used in computers for the temporary storage of
programs and data.
The contents of many RAM address locations will be read
from and written to as the computer executes a program.
This requires fast read and write cycle times for the RAM
so as not to slow down the computer operation
Disadvantage – it is volatile and will lose all stored
information if power is interrupted or turned off.(volatile)
Advantage- can be written into and read from rapidly
with equal ease
 RAM
(Static Random Access Memory)

 SRAM use bistable latching circuitry

for single bit storage.
 Using BJT and MOS technology.
– Advantage of BJT is high speed
device. SRAM CELL

– Advantage of CMOS is high

capacity and low power
consumption.
 RAM
STATIC RAM (SRAM)
(Static Random Access Memory)

• Can store data as long as power is applied to the chip.

• SRAM memory cells are essentially flip-flops that will
stay in a given state (store a bit) indefinitely provide
that power to the circuit is not interrupted.
• Main applications of SRAM are used in various
electronic applications including toys, automobiles,
digital devices and computers.
 RAM
(Static Random Access Memory)
RAM
(Static Random Access Memory)

Pin description

A0 – An - address line
connect to address bus
D0 – Dn - bus line
connect to bus data
CS* - Chip select atau CE* - Chip enable
to active device
OE* - Output enable
RAM give data to data bus
WE* - Write enable
to active write data bus
 RAM
(Dynamic Random Access Memory)

• High capacity, low power requirement, moderate

operating speed.
• DRAM stores 1s and 0s as charges on a small MOS
capacitor. Because of the tendency for these charges
to leak off after a period of time, DRAM require
periodic recharging or the memory cells; this called
refreshing the DRAM.
• Have 4 times the density of SRAM
• The main internal memory of the most personal
microcomputers uses a DRAM because of its high
capacity and low power consumption
 RAM
(Dynamic Random Access Memory)

• High capacity, low power requirement, moderate

operating speed.
• DRAM stores 1s and 0s as charges on a small MOS
capacitor. Because of the tendency for these charges
to leak off after a period of time, DRAM require
periodic recharging or the memory cells; this called
refreshing the DRAM.
• Have 4 times the density of SRAM
• The main internal memory of the most personal
microcomputers uses a DRAM because of its high
capacity and low power consumption
 RAM
(Dynamic Random Access Memory)

• High capacity, low power requirement, moderate

operating speed.
• DRAM stores 1s and 0s as charges on a small MOS
capacitor. Because of the tendency for these charges
to leak off after a period of time, DRAM require
periodic recharging or the memory cells; this called
refreshing the DRAM.
• Have 4 times the density of SRAM
• The main internal memory of the most personal
microcomputers uses a DRAM because of its high
capacity and low power consumption
RAM
(Dynamic Random Access Memory)

DRAM - Operation principle

DRAM is usually arranged in a square array of one capacitor and transistor
per cell.

The illustrations to the right show a simple example with only 4 by 4 cells
(modern DRAM can be thousands of cells in length/width).

The long lines connecting each row are known as word lines. Each
column is actually composed of two bit lines, each one connected to every
other storage cell in the column.
RAM
(Dynamic Random Access Memory)

Principle of operation of DRAM read, for simple 4 by 4 array.

 Different between ROM and RAM

ROM : Read-Only Memory

Non-volatile (data retained even without power)
Exists on all computers
Functions on general-purpose computer: power-on self test, basic
input/output system (BIOS), monitor program, etc.
Functions on embedded systems: power-on self test, monitor program, application
program.

RAM : Random Access Memory

Volatile (data disappears without power)
Functions on general purpose computer: main memory for running
operating system and application program
Functions on embedded systems: scratch-pad memory
May not be required on very simple embedded systems
 MEMORY MAP
• Introduction to address decoding
• Full address decoding
• Partial address decoding
• Implementing address decoders
• Examples
Memory Map and Address
Decoding
Different portions of memory are used for different purposes:
RAM, ROM, I/O devices

Even if all the memory was of one type, we still have to

implement it using different and unique addressing.

This means that for a given valid address, one and only one
memory-mapped component must be accessed.

Address decoding is the process of generating chip select

(CS*) signals from the address bus for each device in the
system
EXAMPLE :

Let’s assume a very simple system like that:

> CPU 8 bit data bus line
> 16 bit address bus line
> 12 Kbyte ROM
> 4 Kbyte for I/O ports
> 16 Kbyte RAM

Make a sample memory map for that system.

 SOLUTION

i. What is the entire range for system

addresses?

ii. What is the entire range for every component

ROM
ROM, I/O and RAM
I/O

iii. Assume that RAM

memory map figure like that:
unused
i. System Size = 2n (n= address pin)
= 216
= 65536 Byte

Start Address = 0
End Address = 65536 – 1 (size -1)
= 65535

Range Address System : 0 -- 65535 OR 0000 - FFFF (hexadecimal)

Start
0000 H
ROM

I/O

RAM

End unused
FFFF H
ii. Range Address for ROM

Given Size of ROM = 12 Kbyte

= 12 x 1024 byte
= 12288 byte
= 3000 (hex)
> Start Address for ROM = 0000
> End Address for ROM = 3000 – 1
= 2FFF

0000 H
ROM
2FFFF H

I/O

RAM

unused
FFFF H
iii. Range Address for I/O

Given Size of I/O = 4 Kbyte

= 4 x 1024 byte
= 4096 byte
= $1000 (hex)

Start Address I/O = End Address for ROM + 1

= $2FFF + 1
= $3000 0000 H
End Address I/O = $3000 + $1000 – 1
ROM
= $3FFF 2FFF H
3000 H
I/O
3FFF H

RAM

unused
FFFF H
iv. Range Address for RAM

Given Size of RAM = 16 Kbyte

= 16 x 1024 byte
= 16384 byte
= $4000
Start Address for RAM = End Address for I/O + 1
= $3FFF + 1
= $4000
End Address for RAM = $4000 + $4000 – 1
= $7FFF 0000 H
ROM
2FFF H
3000 H
I/O
3FFF H
4000 H
RAM
7FFF H

FFFF H unused
Memory Map for the System is Figure below:

0000
ROM
2FFF
3000
I/O

3FFF
4000
RAM

7FFF
8000
UNUSED
 
FFFF