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Introduction To BJT

This document provides an introduction to bipolar junction transistors (BJTs). It discusses the basic physical structure of BJTs, including the emitter, base, and collector regions made of doped semiconductor material. It also describes how BJTs are biased and operate in different regions, including cutoff, saturation, linear/active, and breakdown regions. Key transistor parameters like alpha, beta, currents, voltages, and the quiescent operating point are defined. Common applications like switching, amplification, and voltage regulation are listed.

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Lutfiza Fajri Afriliyani
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60 views20 pages

Introduction To BJT

This document provides an introduction to bipolar junction transistors (BJTs). It discusses the basic physical structure of BJTs, including the emitter, base, and collector regions made of doped semiconductor material. It also describes how BJTs are biased and operate in different regions, including cutoff, saturation, linear/active, and breakdown regions. Key transistor parameters like alpha, beta, currents, voltages, and the quiescent operating point are defined. Common applications like switching, amplification, and voltage regulation are listed.

Uploaded by

Lutfiza Fajri Afriliyani
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Introduction to Bipolar Juntion Transistor

Lecture Outline

Half wave Rectifier Full wave Rectifier Bridge Rectifier


What is a transistor?
• A transistor is a 3 terminal electronic device made of
semiconductor material.
• Transistors have many uses, including amplification, switching,
voltage regulation, and the modulation of signals
Bipolar Transistor
• A transistor is basically a Si or Ge crystal containing three
separate regions.
Architecture of BJTs
• The bipolar junction transistor (BJT) is constructed with three
doped semiconductor regions separated by two pn junctions
• Regions are called emitter, base and collector
Physical Structure of the BJT

Cross-section of an integrated npn bipolar junction transistor

6
Bipolar Transistor
• The depletion layers do not have the same width,
because different regions have different doping levels.
Biasing
• If both the junctions are forward biased free electrons enter
the emitter and collector of the transistor, joins at the base
and come out of the base.

• If both the junction are reverse biased then small currents


flows through both junctions only due to thermally produced
minority carriers and surface leakage.
Biasing
• When the emitter junction is forward biased and
collector junction is reverse biased then one expect large
emitter current and small collector current but collector
current is almost as large as emitter current.
Current flow in an npn transistor biased to operate in the active mode, (Reverse current components due to drift of thermally
generated minority carriers are not shown.)

10
Transistor Current

• The total current flowing into the transistor must be equal to the
total current flowing out of it.

𝐼 𝐸 =𝐼 𝐶 + 𝐼 𝐵
Transistor Applications
• Switching
• Amplification
• Variable Resistor
• Impedance Matching
• Voltage Regulation
Basic circuits of BJT
Operation of BJTs
• BJT will operates in one of following four
region
– Cutoff region (for digital circuit)
– Saturation region (for digital circuit)
– Linear (active) region (to be an amplifier)
– Breakdown region (always be a disaster)
Operation of BJTs
DC Analysis of BJTs
• Transistor Currents:
IE = IC + IB
• alpha (DC)
IC = DCIE
• beta (DC)
IC = DCIB
– DC typically has a value between 20 and 200
DC Analysis of BJTs
• DC voltages for the biased transistor:
• Collector voltage
VC = VCC - ICRC
• Base voltage
VB = VE + VBE

– for silicon transistors, VBE = 0.7 V


– for germanium transistors, VBE = 0.3 V
Q-point

• The base current, IB, is


established by the base
bias
• The point at which the
base current curve
intersects the dc load line
is the quiescent or Q-point
for the circuit
Q-point
DC Analysis of BJTs
• The voltage divider
biasing is widely used
• Input resistance is:
RIN  DCRE
• The base voltage is
approximately:
VB  VCCR2/(R1+R2)

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