DMC Abstract
DMC Abstract
• Abstract
• Introduction
• Literature review
• Existing system
• Objective
• Methodology
• References
• Transient multiple cell upsets (MCUs) are becoming major issues in the reliability of memories
exposed to radiation environment. To prevent MCUs from causing data corruption, more complex
error correction codes (ECCs) are widely used to protect memory, but the main problem is that
they would require higher delay overhead.
• Decimal matrix code (DMC) based on divide-symbol is proposed to enhance memory reliability
with lower delay overhead. The proposed DMC utilizes decimal algorithm to obtain the maximum
error detection capability.
• Enhanced memory reliability against multiple cell upsets using decimal matrix code is a technique
used to improve the reliability of memory systems by mitigating the effects of multiple cell upsets.
• Multiple cell upsets refer to a phenomenon that can occur in memory systems where multiple
memory cells are affected by a single event, such as a cosmic ray or other high-energy particle.
These particles can cause a disturbance in the charge of memory cells, leading to errors in
the stored data.
• "Fault-Tolerant Techniques for Digital Circuits" by Bhagat et al. (2016), discusses various fault-
tolerant techniques, including redundancy-based approaches and error-detection and correction
codes.
• "A Comprehensive Study of Error-Correcting Codes for NAND Flash Memory" by Liang et al.
(2017), which investigates the performance of different error-correcting codes (ECCs) for NAND
flash memory.
• "A Survey on Memory Errors, Their Mechanisms, and Error Correction Techniques" by Kang et
al. (2019), surveys various memory error mechanisms and error-correction techniques.
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EXISTING SYSTEM
1.Hamming distance
• Above codes require more area, power, and delay overheads since the encoding and decoding
circuits are more complex in these complicated codes.
• The objective of using decimal matrix code for enhanced memory reliability against multiple cell
upsets is to improve the fault tolerance of memory systems by detecting and correcting errors
caused by multiple bit flips, which are also known as multiple cell upsets (MCUs).
• Decimal matrix codes are a type of error-correcting code that can detect and correct multiple bit
errors in a memory system. They are based on the representation of data in a decimal format,
rather than binary, which allows for more efficient error correction
• The methodology for enhanced memory reliability against multiple cell upsets using decimal
matrix code involves encoding the data using a matrix code.
• The code that can detect and correct errors, storing the encoded data in the memory chip, and
decoding the data using the same matrix code during the read operation to ensure
reliable data retrieval.
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REFERENCES
• [1] D. Radaelli, H. Puchner, S. Wong, and S. Daniel, “Investigation of multi-bit upsets in a 150 nm
technology SRAM device,” IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2433–2437, Dec. 2005.
• [2] E. Ibe, H. Taniguchi, Y. Yahagi, K. Shimbo, and T. Toba, “Impact of scaling on neutron
induced soft error in SRAMs from an 250 nm to a 22 nm design rule,” IEEE Trans. Electron
Devices, vol. 57, no. 7, pp. 1527–1538, Jul. 2010.